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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 865 records · Page 48
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Anomalous three-dimensional bulk ac conduction within the Kondo gap of SmB 6 single crystals

The Kondo insulator SmB 6 has long been known to display anomalous transport behavior at low temperatures, T < 5 K. In this temperatures range, a plateau is observed in the dc resistivity, contrary to the exponential divergence expected for a gapped system. Some recent theoretical calculations suggest that SmB 6 may be the first topological Kondo insulator (TKI) and propose that the residual conductivity is due to topological surface states which reside within the Kondo gap. Since the TKI prediction many experiments have claimed to observe high mobility surface states within a perfectly insulating hybridization gap. We investigate the low energy optical conductivity within the hybridization gap of single crystals of SmB 6 via time domain terahertz spectroscopy. Samples grown by both optical floating zone and aluminum flux methods are investigated to probe for differences originating from sample growth techniques. We find that both samples display significant three-dimensional bulk conduction originating within the Kondo gap. Although SmB 6 may be a bulk dc insulator, it shows significant bulk ac conduction that is many orders of magnitude larger than any known impurity band conduction. The nature of these in-gap states and their coupling with the low energy spin excitons of SmB 6 is discussed. In addition, the well-defined conduction path geometry of our optical experiments allows us to show that any surface states, which lie below our detection threshold if present, must have a sheet resistance of R / square ≥ 1000 Ω .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Oxygen-modulated quantum conductance for ultrathin HfO 2 -based memristive switching devices

Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent noninteger conductance (in terms of conductance quantum G 0 ). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO 2 -Pt structure, involving the movement of one or two oxygen atoms. Oxygen atoms moving within a conductive oxygen vacancy filament act as tunneling barriers, and partition the filament into weakly coupled quantum wells. We show that the low-bias conductance decreases exponentially when one oxygen atom moves away from interface. In conclusion, our results demonstrate the high sensitivity of the device conductance to the position of oxygen atoms.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Antisite Pairs Suppress the Thermal Conductivity of BAs

BAs was predicted to have an unusually high thermal conductivity with a room temperature value of 2000 W m –1 K –1 , comparable to that of diamond. However, the experimentally measured thermal conductivity of BAs single crystals is still lower than this value. To identify the origin of this large inconsistency, we investigate the lattice structure and potential defects in BAs single crystals at the atomic scale using aberration-corrected scanning transmission electron microscopy (STEM). Rather than finding a large concentration of As vacancies ( V As ), as widely thought to dominate the thermal resistance in BAs, our STEM results show an enhanced intensity of some B columns and a reduced intensity of some As columns, suggesting the presence of antisite defects with As B (As atom on a B site) and B As (B atom on an As site). Additional calculations show that the antisite pair with As B next to B As is preferred energetically among the different types of point defects investigated and confirm that such defects lower the thermal conductivity for B As . Using a concentration of 1.8(8)% (6.6 ± 3.0 × 10 20 cm –3 in density) for the antisite pairs estimated from STEM images, the thermal conductivity is estimated to be 65–100 W m –1 K –1 , in reasonable agreement with our measured value. Our study suggests that As B –B As antisite pairs are the primary lattice defects suppressing thermal conductivity of B As . Possible approaches are proposed for the growth of high-quality crystals or films with high thermal conductivity. In conclusion by employing a combination of state-of-the-art synthesis, STEM characterization, theory, and physical insight, this work models a path toward identifying and understanding defect-limited material functionality.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermal conductivity and its relation to atomic structure for symmetrical tilt grain boundaries in silicon

We perform a systematic study of thermal resistance and conductance of tilt grain boundaries (GBs) in Si using classical molecular dynamics. The GBs studied are naturally divided into three groups according to the structural units forming the GB core. In this work we find that, within each group, the GB thermal conductivity strongly correlates with the excess GB energy. All three groups predict nearly the same GB conductivity extrapolated to the high-energy limit. This limiting value is close to the thermal conductivity of amorphous Si, suggesting similar heat transport mechanisms. While the lattice thermal conductivity decreases with temperature, the GB conductivity slightly increases. However, at high temperatures it turns over and starts decreasing if the GB structure undergoes a premelting transformation. Analysis of vibrational spectra of GBs resolved along different directions sheds light on the mechanisms of their thermal resistance. The existence of alternating tensile and compressive atomic environments in the GB core gives rise to localized vibrational modes, frequency gaps creating acoustic mismatch with lattice phonons, and anharmonic vibrations of loosely bound atoms residing in open atomic environments.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Concomitant appearance of conductivity and superconductivity in (111) LaAlO 3 /SrTiO 3 interface with metal capping

In epitaxial polar-oxide interfaces, conductivity sets in beyond a finite number of monolayers (ML). This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we experimentally and theoretically study the LaAlO 3 /SrTiO 3 (111) interface where a critical thickness $t_c$ of nine epitaxial LaAlO 3 ML is required to turn the interface from insulating to conducting and even superconducting. In this work, we show that $t_c$ decreases to 3 ML when depositing a cobalt overlayer (capping) and 6 ML for platinum capping. The latter result contrasts with the (001) interface, where platinum capping increases $t_c$ beyond the bare interface. Our density functional theory calculations with a Hubbard U term confirm the observed threshold for conductivity for the bare and the metal-capped interfaces. Interestingly, conductivity appears concomitantly with superconductivity for metal/LaAlO 3 /SrTiO 3 (111) interfaces, in contrast with the metal/LaAlO 3 /SrTiO 3 (001) interfaces where conductivity appears without superconductivity. We attribute this dissimilarity to the different orbital polarization of eg for the (111) versus dxy for the (001) interface.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Higher Hall conductivity from a single wave function: Obstructions to symmetry-preserving gapped edge of (2+1)-dimensional topological order

A (2+1)D topologically ordered phase with U(1) symmetry may or may not have a symmetric gapped edge state, even if both thermal and electric Hall conductivity are vanishing. It has recently been discovered that there are “higher” versions of Hall conductivity valid for fermionic fractional quantum Hall (FQH) states that obstruct symmetry-preserving gapped edge states beyond thermal and electric Hall conductivity. In this paper, we show that one can extract higher Hall conductivity from a single wave function of an FQH state, by evaluating the expectation value of the “partial rotation” unitary, which is a combination of partial spatial rotation and a U(1) phase rotation. This result is verified numerically with the fermionic Laughlin state with 𝜈=1/3 and 1/5, as well as the non-Abelian Moore-Read state. Together with topological entanglement entropy, we prove that the expectation values of the partial rotation completely determine if a bosonic/fermionic Abelian topological order with U(1) symmetry has a symmetry-preserving gappable edge state or not. We also show that thermal and electric Hall conductivity of Abelian topological order can be extracted by partial rotations. Even in non-Abelian FQH states, partial rotation provides the Lieb-Schultz-Mattis type theorem constraining the low-energy spectrum of the bulk-boundary system. The generalization of higher Hall conductivity to the case with Lie group symmetry is also presented.

2-dimensional systems↗
DOE OSTI2016

Scaling effects in sodium zirconium silicate phosphate (Na 1+ x Zr 2 Si x P 3- x O 12 ) ion-conducting thin films

Preparation of sodium zirconium silicate phosphate (NaSICon), Na 1+x Zr 2 Si x P 3–x O 12 (0.25 ≤ x ≤ 1.0), thin films has been investigated via a chemical solution approach on platinized silicon substrates. Increasing the silicon content resulted in a reduction in the crystallite size and a reduction in the measured ionic conductivity. Processing temperature was also found to affect microstructure and ionic conductivity with higher processing temperatures resulting in larger crystallite sizes and higher ionic conductivities. The highest room temperature sodium ion conductivity was measured for an x = 0.25 composition at 2.3 × 10 –5 S/cm. In conclusion, the decreasing ionic conductivity trends with increasing silicon content and decreasing processing temperature are consistent with grain boundary and defect scattering of conducting ions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Contribution of the Hydroxyl Group on Interfacial Heat Conduction of Monohydric Alcohols: A Molecular Dynamics Study

Monohydric alcohols have been used as promising phase change materials (PCMs) for low-temperature latent heat storage. However, the heat storage/retrieval rates are limited due to the low thermal conductivity of such alcohols. In this work, nonequilibrium molecular dynamics (NEMD) simulations were performed to study the microscopic heat conduction in example monohydric alcohols, i.e., 1-dodecanol (C12H26O), 1-tetradecanol (C14H30O), and 1-hexadecanol (C16H34O). A simplified ideal crystal model was proposed to exploit the potential for improving the thermal conductivity of monohydric alcohols. The effect of ideal crystalline structures, especially the contribution of the hydroxyl group, on the microscopic heat conduction process was analyzed. The thermal conductivity of the ideal crystals of the various monohydric alcohols was predicted to be more than twice as compared to that of their respective solids. The major thermal resistance in the ideal crystals was found around the molecular interfaces, as a result of the excellent heat conduction performance along the linear molecular chains. The calculated vibrational density of states (VDOS) and interfacial heat transfer were then investigated. When the interfaces are surrounded by hydroxyl groups as walls, strong hydrogen bond (HB) interactions were observed. The interfacial heat transfer coefficient of the ideal crystalline structures of 1-tetradecanol was found to reach up to ~735.6 MW/m2 W. It was elucidated that the high interfacial heat transfer rate is clearly related to the stronger intermolecular interactions.

Engineering↗
DOE OSTI2025

Controlled phosphate doping into nanoscopic SiO 2 proton conducting membranes

This article describes a method to introduce phosphate (PO 4 ) into SiO 2 atomic layer deposition (ALD) films in a self-limiting fashion. The method involves the use of a less common phosphate precursor, trimethyl phosphite [P(OMe) 3 ], to introduce PO 4 as a low-level dopant, <1 at. %, into a SiO 2 ALD process using bis(ethylmethylamino)silane and a modified O 3 conversion. P(OMe) 3 does not deposit a film with typical oxygen sources but incorporates as PO 4 in an ABC-type ALD scheme at deposition temperatures ranging from 100 to 300 °C. Addition of up to ∼1 at. % of PO 4 does not significantly impact the film density or concentrations of carbon and nitrogen impurities, which are both <0.4 at. %. Despite the relatively low dopant concentrations, PO 4 incorporation is shown to have a large impact on transport properties of the film. When explored as proton (H + )-conducting membranes, undoped SiO 2 ALD films showed H + conductivities (3 × 10 −6 –8 × 10 −5 S cm −1 ) and low H 2 permeabilities (<10 −9 cm 2 s −1 ) when measured at room temperature. The addition of PO 4 is shown to increase H + conductivity to 2 × 10 −4 S cm −1 , while maintaining low H 2 permeability of <10 −9 cm 2 s −1 . The ratio of H + conductivity to H 2 permeability, a key performance metric for H + -conducting membranes used in water electrolyzers, exceeds that of commercial Nafion-117 membranes. Here, the moderate H + conductivity and very low H 2 permeability of PO 4 -doped SiO 2 films make them promising candidates as fluorine-free replacements for Nafion in applications such as water electrolysis, hydrogen fuel cells, and redox flow batteries.

Atomic layer deposition↗
DOE OSTI2018

Thermal conductivity in Bi 0.5 Sb 1.5 Te 3+ x and the role of dense dislocation arrays at grain boundaries

Several prominent mechanisms for reduction in thermal conductivity have been shown in recent years to improve the figure of merit for thermoelectric materials. Such a mechanism is a hierarchical all-length-scale architecturing that recognizes the role of all microstructure elements, from atomic to nano to microscales, in reducing (lattice) thermal conductivity. In this context, there have been recent claims of remarkably low (lattice) thermal conductivity in Bi 0.5 Sb 1.5 Te 3 that are attributed to seemingly ordinary grain boundary dislocation networks. These high densities of dislocation networks in Bi 0.5 Sb 1.5 Te 3 were generated via unconventional materials processing with excess Te (which formed liquid phase, thereby facilitating sintering), followed by spark plasma sintering under pressure to squeeze out the liquid. We reproduced a practically identical microstructure, following practically identical processing strategies, but with noticeably different (higher) thermal conductivity than that claimed before. We show that the resultant microstructure is anisotropic, with notable difference of thermal and charge transport properties across and along two orthonormal directions, analogous to anisotropic crystals. Thus, we believe that grain boundary dislocation networks are not the primary cause of enhanced ZT through reduction in thermal conductivity. Instead, we can reproduce the purported high ZT through a favorable but impractical and incorrect combination of thermal conductivity measured along the pressing direction of anisotropy while charge transport measured in the direction perpendicular to the anisotropic direction. We believe that our work underscores the need for consistency in charge and thermal transport measurements for unified and verifiable measurements of thermoelectric (and related) properties and phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structural Basis for Metallic-Like Conductivity in Microbial Nanowires

Direct measurement of multiple physical properties of Geobacter sulfurreducens pili have demonstrated that they possess metallic-like conductivity, but several studies have suggested that metallic-like conductivity is unlikely based on the structures of the G. sulfurreducens pilus predicted from homology models. In order to further evaluate this discrepancy, pili were examined with synchrotron X-ray microdiffraction and rocking-curve X-ray diffraction. Both techniques revealed a periodic 3.2-Å spacing in conductive, wild-type G. sulfurreducens pili that was missing in the nonconductive pili of strain Aro5, which lack key aromatic acids required for conductivity. The intensity of the 3.2-Å peak increased 100-fold when the pH was shifted from 10.5 to 2, corresponding with a previously reported 100-fold increase in pilus conductivity with this pH change. These results suggest a clear structure-function correlation for metallic-like conductivity that can be attributed to overlapping π-orbitals of aromatic amino acids. A homology model of the G. sulfurreducens pilus was constructed with a Pseudomonas aeruginosa pilus model as a template as an alternative to previous models, which were based on a Neisseria gonorrhoeae pilus structure. This alternative model predicted that aromatic amino acids in G. sulfurreducens pili are packed within 3 to 4 Å, consistent with the experimental results. Thus, the predictions of homology modeling are highly sensitive to assumptions inherent in the model construction. Finally, the experimental results reported here further support the concept that the pili of G. sulfurreducens represent a novel class of electronically functional proteins in which aromatic amino acids promote long-distance electron transport.

36 MATERIALS SCIENCE↗
DOE OSTI2018

The Second Boundaries of Stability Zones and the Angular Diagrams of Conductivity for Metals Having Complicated Fermi Surfaces

We consider some general aspects of dependence of magneto-conductivity on a magnetic field in metals having complicated Fermi surfaces. As it is well known, a nontrivial behavior of conductivity in metals in strong magnetic fields is connected usually with appearance of non-closed quasiclassical electron trajectories on the Fermi surface in a magnetic field. The structure of the electron trajectories depends strongly on the direction of the magnetic field and usually the greatest interest is caused by open trajectories that are stable to small rotations of the direction of B. The geometry of the corresponding Stability Zones on the angular diagram in the space of directions of B represents a very important characteristic of the electron spectrum in a metal linking the parameters of the spectrum to the experimental data. Here we will consider some very general features inherent in the angular diagrams of metals with Fermi surfaces of the most arbitrary form. In particular, we will show here that any Stability Zone actually has a second boundary, restricting a larger region with a certain behavior of conductivity. Besides that, we shall discuss here general questions of complexity of the angular diagrams for the conductivity and propose a theoretical scheme for dividing the angular diagrams into “simple” and “complex” diagrams. The proposed scheme will in fact also be closely related to behavior of the Hall conductivity in a metal in strong magnetic fields. In conclusion, we will also discuss the relationship of the questions under consideration to the general features of an (abstract) angular diagram describing the behavior of quasiclassical electron trajectories at all energy levels in the conduction band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime

The effect of hybridization of electron states on the high-frequency conductivity of disordered semiconductors is studied. It is shown that the dependence of the pre-exponential factor of the resonance integral on the intercenter separation in a pair determines the abruptness of the change in conductivity mechanisms near the transition of the frequency dependence of the real part of the conductivity σ{sub 1}(ω) from sublinear to quadratic. The abruptness of the change of the conductivity regimes is associated with a rapid decrease in hopping distance with increasing frequency near the transition, which leads to a substantial relative decrease in the contribution from the phononless conductivity component in the variable-range hopping regime with increasing frequency and transition to the fixed-range hopping conductivity regime.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Interpreting Ionic Conductivity for Polymer Electrolyte Fuel Cell Catalyst Layers with Electrochemical Impedance Spectroscopy and Transmission Line Modeling

A cathode catalyst layer containing optimally distributed ionomer is critical to reduce the platinum loading and increase its utilization in polymer electrolyte fuel cells. Here, electrochemical impedance spectroscopy (EIS) was used to measure effective ionic conductivity of pseudo catalyst layers (PCLs) at a relative humidity (RH) range of 50%-120%. These results are compared to previous work using the hydrogen pump (HP) method. EIS effective ionic conductivity results reported here are higher than those from the HP because in the HP set-up ionic pathways must be effectively connected through the PCL to be counted, whereas in the EIS measurement, ionomer segments that are in contact with the membrane but are not effectively connected all the way through the PCL can be detected. Double layer capacitances and effective ionic conductivities of Pt/C catalyst layers with various supports and ionomer to carbon (I/C) ratios were studied. High surface area carbon support resulted in a lower effective ionic conductivity compared to the graphitized carbon support due to worse ionomer dispersion. Effective ionic conductivities of Pt/C layers were compared to that of PCLs. On average, effective ionic conductivities of Pt/C layers were higher than PCLs because of possible carbon agglomeratio n within the PCLs.

25 ENERGY STORAGE↗
DOE OSTI2025

On the Source of Conductivity in Alkaline Zn Anodes: Zn Percolation and ZnO Bridging

Alkaline Zn anodes are fundamental to commercial Zn-MnO 2 batteries as well as emerging rechargeable designs. In these electrodes, Zn particles are both the active material and source of electronic conduction. However, there are known cases in which electronic connectivity between Zn particles or the current collecting pin is lost even though the battery continues to function. Here we use X-ray computed tomography (CT) of AA batteries to demonstrate several examples of Zn particle-to-particle connectivity breakdown, which is observed even in cases at relatively high discharge rate. This indicates maintenance of the electronic network through the less-conductive ZnO discharge product. We introduce a new equation for electronic conductivity maintained through bridges of ZnO formed between percolating Zn particles. This necessitates discarding the Bruggeman correlation and instead redefining effective electronic conductivity using percolation theory. We demonstrate that such a model for conduction enables prediction of an inverted reaction zone, which is an experimentally observed case in which significant Zn dissolution and ZnO formation occurs heavily near the current collecting pin. Current computational Zn-MnO 2 models never predict an inverted reaction zone, and thus the updated conductivity enables models to accurately explain a wider range of experimental conditions.

Guida, Dominick P. [Northeastern Univ., Boston, MA↗
DOE OSTI2019

Proton Conduction and Oxygen Diffusion in Ultra-Thin Nafion Films in PEM Fuel Cell: How Thin?

The success of PEM fuel cells lies in the design of the cathode where C-supported Pt catalyst is covered by a thin layer of ionomer, allowing easy access of oxygen and protons. The high current densities (1-2 A/cm 2 ) are achieved by the optimization of the thickness of the ionomer between two opposing trends: thinner ionomer allows high oxygen through-plane diffusion, while the in-plane conduction of the protons requires reasonable thickness. Anisotropy is likely to develop in such thin films. The purpose of this work was to investigate the effect of a thinner ionomer layer on the diffusion and conductivity and to establish how thin the ionomer layer can be. Oxygen permeability (DH) and proton conductivity in ultra-thin Nafion films (100-1000nm) were respectively characterized on SiO 2 substrate via limiting current measurement and electrochemical impedance spectroscopy for a range of temperature and relative humidity conditions. The transport behavior of these films is comparable to the electrode membrane layer of PEM fuel cells. Values of oxygen permeability were shown to increase with decreasing film thickness. The oxygen diffusion through the gas boundary layer becomes significant only at ultra-thin film thickness. The proton conductivity decreases with decreasing thickness and was disproportional to bulk Nafion behavior. Post-test SEM imaging shows buckling of the thin layer on the silicon wafer between the Pt sites, partially explaining the opposing trends in diffusivity and conductivity as film thickness decreases. Anisotropy exists as the thickness becomes comparable to the size of the aqueous regions of the Nafion ionomer. Measurements of thinner layers (<100nm) were experimentally limited, yet the trends indicate that the thinness of the ionomer in the cathode is limited by its ability to allow proton conductance.

25 ENERGY STORAGE↗
DOE OSTI2018

Towards Mixed Ionic and Electronic Conducting Li-Stuffed Garnets

Li-stuffed garnet-type Li 7 La 2.75 Ca 0.25 Zr 1.75 Nb 0.25 O 12 (LLCZNO) and Li 7+y La 2.75 Ca 0.25 Zr 1.75-y Nb 0.25 MyO 12 (M = Mn, Fe, Co, Ni; y = 0.1, 0.2, referred to as yM-LLCZNO) were synthesized in air by ceramic synthesis at different sintering temperatures. The resulting compositions were characterized for their phase formation and microstructure, and their ionic and electronic conductivities in air and 7% H 2 /N 2 . Powder X-ray diffraction showed that transition metal-doped LLCZNO garnets contain several impurity phases. The transition metal-substituted samples have lower conductivities than that of the parent LLCZNO. The electronic conductivities of selected transition metal-doped LLCZNO samples were found to be about 4 to 5 orders of magnitude lower than their corresponding ionic conductivity, highlighting the challenge to design single-phase mixed electronic and ionic conducting Li-stuffed garnets in both oxidizing and reducing atmospheres. The research area of single-phase mixed conducting Li-garnet is relatively unexplored at the moment, and a theoretical study will help to elucidate the underlying challenge in doping transition metal in Li-based garnets structure and its effect on transport properties.

25 ENERGY STORAGE↗
DOE OSTI2017

Ion Conduction in Microphase-Separated Block Copolymer Electrolytes

Microphase separation of block copolymers provides a promising route towards engineering a mechanically robust ion conducting film for electrochemical devices. The separation into two different nano-domains enables the film to simultaneously exhibit both high ion conductivity and mechanical robustness, material properties inversely related in most homopolymer and random copolymer electrolytes. To exhibit the maximum conductivity and mechanical robustness, both domains would span across macroscopic length scales enabling uninterrupted ion conduction. One way to achieve this architecture is through external alignment fields that are applied during the microphase separation process. In this review, we present the progress and challenges for aligning the ionic domains in block copolymer electrolytes. A survey of alignment and characterization is followed by a discussion of how the nanoscale architecture affects the bulk conductivity and how alignment may be improved to maximize the number of participating conduction domains.

Kambe, Yu (ORCID:000000021422350X)↗