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In recent designs of safety-critical pyro control circuitry, latching circuits, used to store the state of control signals, have been found to have sensitivity to noise that could lead to inadvertent firing. This technical bulletin describes the sensitive circuit, and provides best practice recommendations to improve the design.
This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.
This IR is a follow-up conference Paper to the IR approved abstract; PNNL-SA-194096. --- Verification that equipment is authentic and not changed; even at the circuit card assembly (CCA) level will likely be an important component of future arms control treaties. This effort was an initial evaluation of the potential for laser-based ultrasound (LBU) as an inspection tool for Unique Identification (UID) of Circuit Card Assembly (CCA) boards and CCA components. The LBU system used a laser pulse for ultrasound generation and an Optical Microphone for ultrasound detection to image subsurface structures without physical contact and in a dry state. This paper described the selected CCA surrogate, CCA components that were examined, the LBU system, LBU images of the CCA components, and the initial development of UID algorithms. Receiver operating characteristics (ROC) curves indicated good performance for two algorithms as a potential means for UID of CCA boards and CCA components.
Positive- and negative-sequence equivalent-circuit models are put forth to capture the operation of grid-forming (GFM) inverters in unbalanced steady-state operating conditions acknowledging the impact of current limiting. The particular control architecture examined adopts droop control (for primary control), nested inner-current and outer-voltage control (in the stationary reference frame), and it is adaptable to two different types of current limiting (current-reference saturation and virtual-impedance limiting). We anticipate the proposed models to be of interest in modeling, analysis, and simulation of GFM inverters in unbalanced settings that may arise, e.g., in the face of faults. Validation of the equivalent-circuit models is pursued via comparison with full-order electromagnetic-transient (EMT) simulations for representative balanced and unbalanced faults.
The accumulation of lanthanide fission products in molten salts reduces the efficiency of pyroprocessing used nuclear fuel. Lanthanide fission products are notoriously difficult to separate due to their similar physical and electrical properties. We developed a novel electrochemical technique called serial open circuit potentiometry (SOCP) which allows us to delineate between metal deposition reactions with similar reduction potentials to great precision. SOCP has several advantages over traditional open circuit potentiometry including its ability to create 3D plots that describe all metal deposition reactions in a system. This information can be used to precisely determine equilibrium potentials of metal deposition reactions and quantify their error, determine nucleation potentials, and determine the nucleation and growth mechanism. In this work, we demonstrated the effectiveness of SOCP by studying molten salt mixtures containing CeCl3, GdCl3, and both CeCl3 and GdCl3 in LiCl-KCl eutectic.
The advance of printed electronics is significantly bolstered by the development of liquid-state electronics that overcome the inherent limitations in flexibility and reconfigurability of solid-state electronics. By integrating the biocompatibility and conductivity of sulfonated polyaniline (S-PANI) and phytic acid (PA) with the reconfigurability of structured liquids, highly conductive all-liquid threads are developed. The dense packing and overlap of PA/S-PANI complexes at an oil/water interface promotes in-plane electron transport, and standard four-point probe measurements of PA/S-PANI interfacial assemblies demonstrate enhanced electrical properties. Notably, the rapid jetting of the ink phase into the matrix phase allows for liquid threads to be printed, enabling the fabrication of large-scale, conductive pathways between two electrodes and liquid circuits. Upon mechanical cleavage of the liquid wires, circuits can be broken, but will easily self-repair using an electric field, making this motif useful in the design of switches as well as restoring conductive pathways in series or in parallel. In conclusion, the demonstrated flexibility and reconfigurability these PA/S-PANI wires possess hold significant promise for their practical use in the design of flexible and adaptive bioelectronics that can be repaired on demand, signifying a transformative step in the evolution of liquid electronic materials.
Abstract Non‐von‐Neumann computing using neuromorphic systems based on two‐terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the “write” and “read” operations using a “gate” electrode to tune the conductance state through charge‐transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in‐depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low‐power neuromorphic computing are discussed.
To achieve high-efficiency polycrystalline CdTe-based thin-film solar cells, the CdTe absorbers must go through a post-deposition CdCl 2 heat treatment followed by a Cu diffusion step. To better understand the roles of each treatment with regard to improving grains, grain boundaries, and interfaces, CdTe solar cells with and without Cu diffusion and CdCl 2 heat treatments are investigated using cross-sectional electron beam induced current, electron backscatter diffraction, and scanning transmission electron microscope techniques. The evolution of the cross-sectional carrier collection profile due to these treatments that cause an increase in short-circuit current and higher open-circuit voltage are identified. Additionally, an increased carrier collection in grain boundaries after either/both of these treatments is revealed. The increased current at the grain boundaries is shown to be due to the presence of a space charge region with an intrinsic carrier collection profile width of ≈350 nm. Scanning transmission electron microscope electron-energy loss spectroscopy shows a decreased Te and increased Cl concentration in grain boundaries after treatment, which causes the inversion. Furthermore, each treatment improves the overall carrier collection efficiency of the cell separately, and, therefore, the benefits realized by each treatment are shown to be independent of each other.
“Anode-free” solid-state batteries (SSBs), which have no anode active material, can exhibit extremely high energy density (≈1500 Wh L -1 ). However, there is a lack of understanding of the lithium plating/stripping mechanisms at initially lithium-free solid-state electrolyte (SSE) interfaces because excess lithium metal is often used. Here, it is demonstrated that commercially relevant quantities of lithium (>5 mAh cm -2 ) can be reliably plated at moderate current densities (1 mA cm -2 ) using the sulfide SSE Li 6 PS 5 Cl. Investigations of lithium plating/stripping mechanisms, in conjunction with cryo-ocused ion beam (FIB) imaging, synchrotron tomography, and phase-field modeling, reveal that the cycling stability of these cells is fundamentally limited by the nonuniform presence of lithium during stripping. Local lithium depletion causes isolated lithium regions toward the end of stripping, decreasing electrochemically active area and resulting in high local current densities and void formation. This accelerates subsequent filament growth and short circuiting compared to lithium-excess cells. Despite this degradation mode, here it is shown that anode-free cells exhibit comparable Coulombic efficiency to lithium-excess cells, and improved resistance to short circuiting is achieved by avoiding local lithium depletion through retention of thicker lithium at the interface. These new insights provide a foundation for engineering future high-energy anode-free SSBs.
A well-posed physics-based compact model for a three-terminal silicon–oxide–nitride–oxide–silicon (SONOS) synaptic circuit element is presented for use by neuromorphic circuit/system engineers. Based on technology computer aided design (TCAD) simulations of a SONOS device, the model contains a nonvolatile memristor with the state variable QM representing the memristor charge under the gate of the three-terminal element. By incorporating the exponential dependence of the memristance on QM and the applied bias V for the gate, the compact model agrees quantitatively with the results from TCAD simulations as well as experimental measurements for the drain current. The compact model is implemented through VerilogA in the circuit simulation package Cadence Spectre and reproduces the experimental training behavior for the source–drain conductance of a SONOS device after applying writing pulses ranging from –12 V to +11 V, with an accuracy higher than 90%.
The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (V OC,in ), measured by photoluminescence, and the external open-circuit voltage (V OC,ex ) i.e. an additional V OC deficit. Higher V OC,ex value aim require a comprehensive understanding of connection between V OC deficit and interface recombination. Here, a deep near-surface defect model at the absorber/buffer interface is developed for copper indium di-selenide solar cells grown under Cu excess conditions to explain the disparity between V OC ,in and V OC,ex . The model is based on experimental analysis of admittance spectroscopy and deep-level transient spectroscopy, which show the signature of deep acceptor defect. Further, temperature-dependent current-voltage measurements confirm the presence of near surface defects as the cause of interface recombination. The numerical simulations show strong decrease in the local V OC ,in near the absorber/buffer interface leading to a V OC deficit in the device. This loss mechanism leads to interface recombination without a reduced interface bandgap or Fermi level pinning. Further, these findings demonstrate that the V OC ,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current voltage measurements to identify the cause of interface recombination in the devices.
Using the path integral associated to a cMERA tensor network, we provide an operational definition for the complexity of a cMERA circuit/state which is relevant to investigate the complexity of states in quantum field theory. In this framework, it is possible to explicitly establish the correspondence (Minimal) Complexity = (Least) Action. Remarkably, it is also shown how the cMERA complexity action functional can be seen as the action of a Liouville field theory, thus establishing a connection with two dimensional quantum gravity. Concretely, the Liouville mode is identified with the variational parameter defining the cMERA circuit. The rate of complexity growth along the cMERA renormalization group flow is obtained and shown to saturate limits which are in close resemblance to the fundamental bounds to the speed of evolution in unitary quantum dynamics, known as quantum speed limits. We also show that the complexity of a cMERA circuit measured through these complexity functionals, can be cast in terms of the variationally-optimized amount of left-right entanglement created along the cMERA renormalization flow. Our results suggest that the patterns of entanglement in states of a QFT could determine their dual gravitational descriptions through a principle of least complexity.
How rapidly can a many-body quantum system generate randomness? Using path integral methods, we demonstrate that Brownian quantum systems have circuit complexity that grows linearly with time. In particular, we study Brownian clusters of N spins or fermions with time-dependent all-to-all interactions, and calculate the Frame Potential to characterize complexity growth in these models. In both cases the problem can be mapped to an effective statistical mechanics problem which we study using path integral methods. Within this framework it is straightforward to show that the kth Frame Potential comes within ϵ of the Haar value after a time of order t ~ kN + k log k + log ϵ –1 . Using a bound on the diamond norm, this implies that such circuits are capable of coming very close to a unitary k-design after a time of order t ~ kN. We also consider the same question for systems with a time-independent Hamiltonian and argue that a small amount of time-dependent randomness is sufficient to generate a k-design in linear time provided the underlying Hamiltonian is quantum chaotic. These models provide explicit examples of linear complexity growth that are analytically tractable and are directly applicable to practical applications calling for unitary k-designs.
The insulation level of DC control circuits is an important safety-critical factor and, thus, should be subject to continuous and periodic monitoring. The methods used for monitoring the insulation in live circuits may, however, disturb the reliable operation of control relays. The risks of misoperation and failure to reset of relays posed by the operation of various insulation monitoring and fault location systems are evaluated.
For stability in the direct current (DC) power grid, it is very important to limit the current of the fault section and to protect the system in the fault condition. That is the core technology of the DC power grid. This paper suggests characteristics and a limited range of the fault current for the new model as the significant protecting technology in the DC power grid. Such new model is the arc-induction-type DC circuit breaker (CB) combined with a magnet. The magnetic arc-induction-type direct-current circuit breaker (DCCB) consists of a neodymium magnet, an induction needle, and electrical contacts. During fault operation, the arc occurring between the contacts is induced to the induction needle. To increase the induction effect, Lorentz force is applied to blow the arc. A magnet was applied to reduce the initial fault current and to induce magnetic flux. The simulation data were analyzed using the Maxwell 3D software program. The electric field included the electric force and the electric charge. Therefore, it could analyze the arc as the electric field. The simulation was performed based on the preceding study on induction needle. As a result of the simulation, it was confirmed that the electric field value of the induction needle increased when the DCCB was combined with a magnet.
The paper is devoted to circuits implementing parity functions. A review of results establishing exact values of the complexity of parity functions is given. The structure of optimal circuits implementing parity functions is described for some bases. For one infinite basis, an upper bound for the complexity of parity functions is given.
Corrosion and particle deposition in the secondary circuits of pressurized water reactors can be mitigated by alternative water chemistries featuring film-forming amines. In the present work, the corrosion of carbon steel in secondary side water with or without octadecylamine (ODA) is studied by in situ electrochemical impedance spectroscopy, combined with weight loss/gain measurements, scanning electron microscopy and glow-discharge optical emission spectroscopy. The impedance spectra are interpreted using the mixed-conduction model to extract kinetic parameters of oxide growth and metal dissolution through it. From the experimental results, it can be concluded that ODA addition reduces the corrosion rate of both fresh and pre-oxidized carbon steel in secondary circuit significantly by slowing down both interfacial reactions and transport through the oxide layer.
We present a theoretical proposal for a physical implementation of entanglement concentration and purification protocols for two-mode squeezed microwave photons in circuit quantum electrodynamics (QED). First, we give the description of the cross-Kerr effect induced between two resonators in circuit QED. Then we use the cross-Kerr media to design the effective quantum nondemolition (QND) measurement on microwave-photon number. By using the QND measurement, the parties in quantum communication can accomplish the entanglement concentration and purification of nonlocal two-mode squeezed microwave photons. We discuss the feasibility of our schemes by giving the detailed parameters which can be realized with current experimental technology. Our work can improve some practical applications in continuous-variable microwave-based quantum information processing.