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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Real-time calibration of a feedback trap

Feedback traps use closed-loop control to trap or manipulate small particles and molecules in solution. They have been applied to the measurement of physical and chemical properties of particles and to explore fundamental questions in the non-equilibrium statistical mechanics of small systems. These applications have been hampered by drifts in the electric forces used to manipulate the particles. Although the drifts are small for measurements on the order of seconds, they dominate on time scales of minutes or slower. Here, we show that a recursive maximum likelihood (RML) algorithm can allow real-time measurement and control of electric and stochastic forces over time scales of hours. Simulations show that the RML algorithm recovers known parameters accurately. Experimental estimates of diffusion coefficients are also consistent with expected physical properties.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}–10{sup 12 }cm{sup −2}eV{sup −1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effective gate dielectric for AlN/GaN MIS devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Extremely scaled high-k/In₀.₅₃Ga₀.₄₇As gate stacks with low leakage and low interface trap densities

Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO₂ and ZrO₂ gate stacks with extremely high accumulation capacitance densities of more than 5 μF/cm₂ at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10¹²cm⁻²eV⁻¹range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO₂ and small quantities of In₂O₃, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The dominant factors affecting the memory characteristics of (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} high-k charge-trapping devices

The prototypical charge-trapping memory devices with the structure p-Si/Al{sub 2}O{sub 3}/(Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/Pt(x = 0.5, 0.3, and 0.1) were fabricated by using atomic layer deposition and RF magnetron sputtering techniques. A memory window of 7.39 V with a charge storage density of 1.97 × 10{sup 13 }cm{sup −2} at a gate voltage of ±11 V was obtained for the memory device with the composite charge trapping layer (Ta{sub 2}O{sub 5}){sub 0.5}(Al{sub 2}O{sub 3}){sub 0.5}. All memory devices show fast program/erase speed and excellent endurance and retention properties, although some differences in their memory performance exist, which was ascribed to the relative individual band alignments of the composite (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} with Si.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electron scattering and nonlinear trapping by oblique whistler waves: The critical wave intensity for nonlinear effects

In this paper, we consider high-energy electron scattering and nonlinear trapping by oblique whistler waves via the Landau resonance. We use recent spacecraft observations in the radiation belts to construct the whistler wave model. The main purpose of the paper is to provide an estimate of the critical wave amplitude for which the nonlinear wave-particle resonant interaction becomes more important than particle scattering. To this aim, we derive an analytical expression describing the particle scattering by large amplitude whistler waves and compare the corresponding effect with the nonlinear particle acceleration due to trapping. The latter is much more rare but the corresponding change of energy is substantially larger than energy jumps due to scattering. We show that for reasonable wave amplitudes ∼10–100 mV/m of strong whistlers, the nonlinear effects are more important than the linear and nonlinear scattering for electrons with energies ∼10–50 keV. We test the dependencies of the critical wave amplitude on system parameters (background plasma density, wave frequency, etc.). We discuss the role of obtained results for the theoretical description of the nonlinear wave amplification in radiation belts.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Parallel heat flux and flow acceleration in open field line plasmas with magnetic trapping

The magnetic field strength modulation in a tokamak scrape-off layer (SOL) provides both flux expansion next to the divertor plates and magnetic trapping in a large portion of the SOL. Previously, we have focused on a flux expander with long mean-free-path, motivated by the high temperature and low density edge anticipated for an absorbing boundary enabled by liquid lithium surfaces. Here, the effects of magnetic trapping and a marginal collisionality on parallel heat flux and parallel flow acceleration are examined. The various transport mechanisms are captured by kinetic simulations in a simple but representative mirror-expander geometry. The observed parallel flow acceleration is interpreted and elucidated with a modified Chew-Goldberger-Low model that retains temperature anisotropy and finite collisionality.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Defect states and charge trapping characteristics of HfO{sub 2} films for high performance nonvolatile memory applications

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO{sub 2}-Si (MHOS) structure. The devices based on 800 °C annealed HfO{sub 2} film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10{sup 4 }s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO{sub 2} films. We investigated the defect states in the HfO{sub 2} films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO{sub 2} based MHOS devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Constructive polarization modulation for coherent population trapping clock

We propose a constructive polarization modulation scheme for atomic clocks based on coherent population trapping (CPT). In this scheme, the polarization of a bichromatic laser beam is modulated between two opposite circular polarizations to avoid trapping the atomic populations in the extreme Zeeman sublevels. We show that if an appropriate phase modulation between the two optical components of the bichromatic laser is applied synchronously, the two CPT dark states which are produced successively by the alternate polarizations add constructively. Measured CPT resonance contrasts up to 20% in one-pulse CPT and 12% in two-pulse Ramsey-CPT experiments are reported, demonstrating the potential of this scheme for applications to high performance atomic clocks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Target normal sheath acceleration of foil ions by laser-trapped hot electrons from a long subcritical-density preplasma

In a long subcritical density plasma, an ultrashort ultraintense laser pulse can self-organize into a fast but sub-relativistic propagating structure consisting of the modulated laser light and a large number of trapped electrons from the plasma. Upon impact of the structure with a solid foil target placed in the latter, the remaining laser light is reflected, but the dense and hot trapped electrons pass through the foil, together with the impact-generated target-frontsurface electrons to form a dense hot electron cloud at the back of the target suitable for enhancing target normal sheath acceleration of the target-backsurface ions. The accelerated ions are well collimated and of high charge and energy densities, with peak energies a full order of magnitude higher than that from target normal sheath acceleration without the subcritical density plasma. In the latter case, the space-charge field accelerating the ions is limited since they are formed only by the target-frontsurface electrons during the very short instant of laser reflection.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Electron and recoil ion momentum imaging with a magneto-optically trapped target

A reaction microscope (ReMi) has been combined with a magneto-optical trap (MOT) for the kinematically complete investigation of atomic break-up processes. With the novel MOTReMi apparatus, the momentum vectors of the fragments of laser-cooled and state-prepared lithium atoms are measured in coincidence and over the full solid angle. The first successful implementation of a MOTReMi could be realized due to an optimized design of the present setup, a nonstandard operation of the MOT, and by employing a switching cycle with alternating measuring and trapping periods. The very low target temperature in the MOT (∼2 mK) allows for an excellent momentum resolution. Optical preparation of the target atoms in the excited Li 2{sup 2}P{sub 3/2} state was demonstrated providing an atomic polarization of close to 100%. While first experimental results were reported earlier, in this work, we focus on the technical description of the setup and its performance in commissioning experiments involving target ionization in 266 nm laser pulses and in collisions with projectile ions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Correlation of a generation-recombination center with a deep level trap in GaN

We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E{sub c} − 0.26 eV, E{sub c} − 0.59 eV, and E{sub c} − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E{sub c} − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E{sub c} − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Shear flow instabilities induced by trapped ion modes in collisionless temperature gradient turbulence

One important issue in turbulence self-organization is the interplay between the Kelvin–Helmholtz (KH) instability and streamers and/or zonal flows. This question has been debated for a long time. The effects of the KH instability and its position in the sequence of events between streamers, turbulence, and zonal flows have been investigated with a reduced gyro-bounce averaged kinetic code devoted to study the primary ion temperature gradient (ITG) instability linked to trapped ion modes (TIM). In toroidal geometry, the specific dynamics of TIM linked to trapped particles becomes important when the frequency of ITG modes falls below the ion bounce frequency, allowing one to average on both the cyclotron and bounce motion fast time scales. This reduction of the number of degrees of freedom leads to a strong reduction of computer resources (memory and computation time). Bounce-averaged gyrokinetic code can be considered as a toy model able to describe basic structures of turbulent transport in tokamak devices. In particular, by means of this code, we have observed that the energy injected in the system by the TIM instability is exchanged between streamers and zonal flows by means of KH vortices that grow along these structures in the nonlinear phase. The energy transfer occurs throughout the relaxation phase of the streamer growth leading to a modification of the KH modes and to the generation of the zonal flows.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Dexterous acoustic trapping and patterning of particles assisted by phononic crystal plate

In this letter, we present experimental demonstration of multi-particles trapping and patterning by the artificially engineered acoustic field of phononic crystal plate. Polystyrene particles are precisely trapped and patterned in two dimensional arrays, for example, the square, triangular, or quasi-periodic arrays, depending on the structures of the phononic crystal plates with varying sub-wavelength holes array. Analysis shows that the enhanced acoustic radiation force, induced by the resonant transmission field highly localized near the sub-wavelength apertures, accounts for the particles self-organizing. It can be envisaged that this kind of simple design of phononic crystal plates would pave an alternative route for self-assembly of particles and may be utilized in the lab-on-a-chip devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

The basic reason for enhanced electron capture time, τ{sub c}, of the oxide single trap dependence on drain current in the linear operation regime of p{sup +}-p-p{sup +} silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ{sub c} slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n{sup +}-p-n{sup +} FETs, the experimentally observed slope of τ{sub c} equals (−1). On the contrary, for the case of p{sup +}-p-p{sup +} Si FETs in the accumulation regime, the experimentally observed slope of τ{sub c} equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhanced stabilisation of trapped electron modes by collisional energy scattering in tokamaks

The collisional stabilisation via energy scattering and pitch-angle scattering of micro-instabilities in tokamak plasmas is investigated by means of gyrokinetic simulations with a special emphasis on the often neglected energy scattering operator. It is shown that in the linear regime energy scattering has a negligible effect on Ion Temperature Gradient (ITG) modes but enhances the stabilisation of Trapped Electron Modes (TEM) in presence of nonzero ion temperature and density gradients. This stabilisation is sensitive to the model used for the energy restoring term in the collision operator. The contributions of parallel and drift motion to the total growth rate in velocity space are used to characterize the complex stabilisation mechanisms behind pitch-angle and energy scattering for a range of relevant parameters such as the magnetic shear, the collisionality, the logarithmic density gradient, and the logarithmic ion temperature gradient. It is shown that depending on these parameters, energy scattering stabilisation of TEM can be either due to a decrease of the contribution from drifting trapped electrons or to an increase of the contribution from the parallel motion of passing electrons. Finally, for a standard ITG/TEM case, the effect of energy scattering on the nonlinear heat and particle fluxes is investigated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Control of the conformations of ion Coulomb crystals in a Penning trap

Ion Coulomb crystals containing small numbers of ions have been created and manipulated in a wide range of configurations in a Penning trap, from a linear string, through various three-dimensional conformations, to a planar crystal. We show that the dynamics of the system simplifies enormously in a frame which rotates at half the cyclotron frequency and we discuss the effect of the radial cooling laser beam in this frame. Simulations show that the crystal conformations can be reproduced by finding the minimum energy configuration in a frame whose radial potential is modified by the rotation of the ion crystal. The rotation frequency of the crystal deduced from the simulations is consistent with the known laser parameters. We also show that even though the number of ions in our system is small (typically less than 20), the system still behaves like a plasma and its static properties can be calculated using the standard model for a single-component plasma in a trap.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Shear-flow trapped-ion-mode interaction revisited. II. Intermittent transport associated with low-frequency zonal flow dynamics

We address the mechanisms underlying low-frequency zonal flow generation in turbulent system and the associated intermittent regime of ion-temperature-gradient (ITG) turbulence. This model is in connection with the recent observation of quasi periodic zonal flow oscillation at a frequency close to 2 kHz, at the low-high transition, observed in the ASDEX Upgrade [Conway et al., Phys. Rev. Lett. 106, 065001 (2011)] and EAST tokamak [Xu et al., Phys. Rev. Lett 107, 125001 (2011)]. Turbulent bursts caused by the coupling of Kelvin-Helmholtz (KH) driven shear flows with trapped ion modes (TIMs) were investigated by means of reduced gyrokinetic simulations. It was found that ITG turbulence can be regulated by low-frequency meso-scale zonal flows driven by resonant collisionless trapped ion modes (CTIMs), through parametric-type scattering, a process in competition with the usual KH instability.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗