Investigation of the effects of sub-threshold high energy electrons on the properties of silicon photovoltaic cells Midway report, 3 Feb. - 3 Aug. 1969
Subthreshold electron irradiation effects on semiconductor surfaces
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Subthreshold electron irradiation effects on semiconductor surfaces
Photovoltaic characteristics of p-n and n-p Si cells and p-n lithium-doped cells irradiated with high energy electrons
Subthreshold electron irradiation effects on surface and bulk electrical properties of Li-doped and Li-free silicon photovoltaic cells
During a polar motion experiment (in which two laser ranging systems on a north-south line simultaneously tracked a satellite to determine motion of the pole), techniques for improving both the range noise and range bias were demonstrated. The corrections to the measured ranges (based on received signal levels relative to a fixed correction that would have been applied if pulse height information was not available) are given. It was shown that even existing long pulse systems (20 to 40 nsec duration) can be improved to the 20 to 30 cm level of precision without major or expensive changes to the system.
The essential features of the translational energy dependence or excitation function for two types of endoergic collisional processes are deduced on the basis of information on the inverse, exoergic processes. Microreversibility is conveniently exploited via the symmetric field function, Y(E), which is uniquely determined at a given total energy, E. In the case of the vibrational excitation of diatomic molecules by atomic or molecular impact, use is made of the abundant data on the temperature dependence of the relaxation time.
A stochastic model to analyze turbulence-excited rotor blade vibrations, previously described by Gaonkar et al. (1971), is generalized to include nonuniformity of the atmospheric turbulence velocity across the rotor disk in the longitudinal direction. The results of the presented analysis suggest that the nonuniformity of the vertical turbulence over the rotor disk is of little influence on the random blade flapping response, at least as far as longitudinal nonuniformity is concerned.
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Two types of formulas were obtained for (- dE/dx) and the number of collisions per unit of path length (dN/dx) = const, which depend on W sub m, with due account of the polarization effect of the medium.
Closed-loop digital circuit, insensitive to drift with age, monitors input signals in particle detector. Basic elements of calibrator are clock circuit, weighting circuit, integrator, and chopper.
The response of Pilot 425 to heavy ions with energies less than 600 MeV/amu beta approximately 0.8 is examined both theoretically and experimentally. Measurements are presented from an experiment which employed a Ne-20 beam at many energies below 575 MeV/amu. The signal is assumed to come from three sources: (1) Cerenkov light from the heavy ion, (2) Cerenkov light from secondary electrons, and (3) scintillation of the radiator. It is found that the effective index of refraction is 1.518 and that scintillation is present at a level of approximately 2.7 percent of the Cerenkov signal for beta = 1 for Ne-20. The first of these values differs from values previously quoted in the literature.
Statistical errors introduced by D-to-A conversion are reduced.