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DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front- end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high-speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel. Another novel low-power circuit called Pseudo-Thyristor presented in another document will replace traditional discriminator and the Regenerative Current Mirror plus Pseudo- Thyristor will provide a full solution for the silicon pixel low-power frontend ASIC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2018

Regional Manufacturing Cost Structures and Supply Chain Considerations for Medium Voltage Silicon Carbide Power Applications

Bottoms-up cost analysis has been a mainstay of commoditized industry and manufacturing processes for years, however a holistic objective supply chain analysis to inform research and investment in the development of early stage technologies has not. The potential for rapid adoption of wide bandgap (WBG) semiconductors, specifically silicon carbide (SiC), highlights a need to understand the drivers of location-specific manufacturing cost, global supply chains, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform the roadmap of SiC technologies. In collaboration with PowerAmerica the project explores the bottoms-up cost analysis of wafers, devices, modules, and motor drives at the anticipated manufacturing levels. Leveraging these models, it outlines how the cost reduction potential of proposed research advances can be quantified.

42 ENGINEERING↗

DOE OSTI2024

Low Energy Neutron-induced Charged-particle (Z) (LENZ) instrument development with a focus on pulse shape discrimination for low-energy charged particles

To study neutron-induced charged-particle reactions with high precision, the Low Energy Neutron-induced Charged-particle (Z) instrument (LENZ) was developed at the Los Alamos Neutron Science Center. For the interest of measuring (n,p) and (n, α) reactions simultaneously, Pulse Shape Discrimination methods were investigated to identify different charged particles in the energy range of 3 - 20 MeV and improve signal-to-background ratios using Double-sided Silicon Strip Detectors and waveform digitizers. The risetime and pulse shape properties of detected charged particles were characterized for various silicon detector’s thickness with different orientations. During the post-processing of waveforms, we implemented different digital filters for effective particle identifications and improved energy- and timing- resolutions. We validated the optimized digital filters and pulse shape analyses, via measurements with 228 Th and 229 Th calibration sources, proton-induced reactions on a 7 LiF target, and neutron-induced reactions on CH 2 , Ta 2 O 5 , 58 Ni, and 6 LiF/ 59 Ni targets at the time-of-flight facility, LANSCE. In conclusion, the summary of effective thresholds and Figure of Merits on separating different charged particles is reported.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2013

Preparation and characterization of SiO₂:Sm³⁺ nanotube arrays with 1.06 μm laser antireflective property

SiO₂: Sm³⁺ nanotube arrays with excellent antireflective property at 1.06 μm were synthesized by a template-assisted sol–gel process. The molecular structure, morphology and optical properties of the fabricated SiO₂:Sm³⁺ nanotube arrays were investigated by a Fourier transform infrared spectroscope (FTIR), a Scanning electron microscope (SEM), and a spectro-fluorometer, respectively. The experimental results demonstrate that the SiO₂:Sm³⁺ nanotube arrays were formed via the AAO membrane during the sol–gel process. The remarkable antireflective characteristic of about 0.166% at 1.06 μm was attributed to the drastic decrease of effective refraction index which enhances the matching effect between air and substrate. As well as the absorption performance of Sm³⁺ at 1.06 μm which consumes the energies of incident light. - Graphical abstract: Directional aligned SiO₂:Sm³⁺ nanotube arrays were synthesized in AAO template by sol–gel process, and the antiflective performance of arrays is prominent comparing to the blank AAO template. Highlights: • SiO₂:Sm³⁺ nanotube arrays are synthesized by a template-assisted sol–gel process. • SiO₂:Sm³⁺ nanotube arrays have remarkable antireflective properties at 1.06 μm. • The subwavelength structure results in a decrease of effective refraction index. • The absorption performance of Sm³⁺ at 1.06 μm consume the energies of incident light.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2019

Ionization-induced thermally activated defect-annealing process in SiC

Ionizing events can lead to panoply of irradiation effects, and in silicon carbide (SiC), they drastically modify the defect production rate or the initial density. To better comprehend this phenomenon, 6H-SiC single crystals were first predamaged using low-velocity 100-keV Fe + ions at three fluences in the range of 10 14 cm -2 to induce three different initial disorder levels peaking at values between ~0.8 and 1 (1 corresponding to full amorphization). Crystals were then submitted to swift heavy ion irradiation in the 10 13 cm -2 fluence range at both low (~100 K) and high (~770 K) temperature. Rutherford backscattering spectrometry in channeling conditions revealed that swift ions allow annealing part of the initial damage, the recovery efficiency increasing with the irradiation temperature and reaching 75% in initially severely disordered crystals. This temperature effect has been qualitatively predicted by molecular dynamics simulations. Transmission electron microscopy allowed imaging both the recovery and the difference in the microstructure of the layers irradiated at low or high temperature. Recovery cross sections are discovered to lie in the range of a few square nanometers, consistent with previously reported values. A scenario for a general, two-step annealing mechanism referred to as an ionization-activated, thermally assisted defect-annealing (IATADA) process is proposed. This mechanism rationalizes the diverse descriptions reported so far in the literature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2013

OM300 Direction Drilling Module

OM300 – Geothermal Direction Drilling Navigation Tool: Design and produce a prototype directional drilling navigation tool capable of high temperature operation in geothermal drilling Accuracies of 0.1° Inclination and Tool Face, 0.5° Azimuth Environmental Ruggedness typical of existing oil/gas drilling Multiple Selectable Sensor Ranges High accuracy for navigation, low bandwidth High G-range & bandwidth for Stick-Slip and Chirp detection Selectable serial data communications Reduce cost of drilling in high temperature Geothermal reservoirs Innovative aspects of project Honeywell MEMS* Vibrating Beam Accelerometers (VBA) APS Flux-gate Magnetometers Honeywell Silicon-On-Insulator (SOI) High-temperature electronics Rugged High-temperature capable package and assembly process

15 GEOTHERMAL ENERGY↗

DOE OSTI2020

A heterogeneously integrated silicon photonic/lithium niobate travelling wave electro-optic modulator

Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.

42 ENGINEERING↗

DOE OSTI2012

Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} nanoparticles dispersed in a SiO{sub 2} matrix synthesized by sol-gel processing

(Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4})x/(SiO{sub 2})(100 - x) (x = 5, 20 and 50 wt.%) nanocomposites are synthesized by a sol-gel method using tetraethylorthosilicate (TEOS) and metallic nitrates as precursors, and by further annealing the powders for 1 h at 1273 K. X-ray diffraction (XRD), transmission electron microscopy (TEM), room temperature vibrating sample magnetometry (VSM) and SQUID measurements are employed for structural, morphological and magnetic sample characterization. For all the concentrations analyzed, the powder nanocomposites actually consist of spinel NiZn ferrite nanoparticles, dispersed in an amorphous silica matrix. TEM studies reveal different particle size distributions and particle morphologies for the three ferrite contents. The 20 wt.%-NiZn ferrite samples consist of nearly spherical nanoparticles, of about 8 nm, mainly superparamagnetic, well-dispersed in the amorphous silica matrix, while the 5 wt.%-NiZn ferrite samples exhibit a bimodal particle size distribution (5 and 30 nm) of single-domain nanoparticles embedded in the silica. In the 50 wt.%-NiZn ferrite samples, two particle families are observed: small round superparamagnetic nanoparticles of about 8 nm embedded in the amorphous silica matrix and large, non-spherical, ferrimagnetic ones, forming agglomerates outside the matrix. In all the synthesized samples, thickness fringes are observed inside some of the ferrite nanoparticles in dark field images. This contrast is explained using the theory of electron diffraction in a weak beam dark field (WBDF) condition and considering spherical ferrite nanoparticles. A large range of tailored magnetic properties varying the fraction, dispersion and mean size of the ferrimagnetic NiZn ferrite particles is obtained. Room temperature saturation magnetization values are found in the range 3.0-30.4 Am{sup 2}/kg for the different concentration samples. Coercivity values, between 1.9 and 7.6 mT, are more than 50% higher than those measured in powders of pure stoichiometric NiZn ferrite nanoparticles and somewhat higher than those reported for similar NiZn ferrite/SiO{sub 2} nanocomposites also synthesized by sol-gel processes. A correlation between the nanocomposite microstructure and the observed magnetic properties is established. - Highlights: Black-Right-Pointing-Pointer NiZn ferrite/SiO{sub 2} nanocomposites are successfully synthesized by a sol-gel route. Black-Right-Pointing-Pointer Depending on the NiZn ferrite content single or bimodal size distributions result. Black-Right-Pointing-Pointer Coercivity (1.9-7.6 mT) is 50% higher than in stoichiometric NiZn ferrite powders. Black-Right-Pointing-Pointer Microstructure and magnetic properties are correlated.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Evaluation of Low Dose Silicon Carbide Temperature Monitors

Thermocouples are generally used to provide real-time temperature indications in instrumented tests performed at materials and test reactors. Melt wires or paint spots are often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires and paint spots as a post-irradiation technique for peak temperature indication. Unfortunately, these techniques are limited in that they can only detect whether a single temperature is or is not exceeded. Silicon carbide (SiC) monitors are advantageous because a single monitor can be used to determine the peak temperature reached within a relatively broad range (200 – 800°C). Although the use of SiC monitors was proposed more than five decades ago, the ultimate performance limits of this technique are not fully understood. The Nuclear Science User Facilities (NSUF) is the United States Department of Energy Office of Nuclear Energy's only designated nuclear energy user facility. Its mission is to provide nuclear energy researchers access to world-class capabilities and to facilitate the advancement of nuclear science and technology. This mission is supported by providing access to state-of-the-art experimental irradiation testing, post irradiation examination facilities, and high performance computing capabilities as well as technical and scientific assistance for the design and execution of projects. As part of an NSUF project, low dose silicon carbide monitors were irradiated in the Belgian Reactor 2 and were then evaluated both at the SCK•CEN and at Idaho National Laboratory's High Temperature Test Laboratory to determine their peak temperature achieved during irradiation. The technical significance of this work was that the monitors were irradiated to a dose that was significantly less than recommended in published literature. This paper will discuss the evaluation process, the irradiation test, and the performance of the low dose silicon carbide temperature monitors.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Patternable Mesoporous Thin Film Quantum Materials via Block Copolymer Self-Assembly: An Emergent Technology?

Recent developments in quantum materials hold promise for revolutionizing energy and information technologies. The use of soft matter self-assembly, for example, by employing block copolymers (BCPs) as structure directing or templating agents, offers facile pathways toward quantum metamaterials with highly tunable mesostructures via scalable solution processing. Here, we report the preparation of patternable mesoporous niobium carbonitride-type thin film superconductors through spin-coating of a hybrid solution containing an amphiphilic BCP swollen by niobia sol precursors and subsequent thermal processing in combination with photolithography. Spin-coated as-made BCP-niobia hybrid thin films on silicon substrates after optional photolithographic definition are heated in air to produce a porous oxide, and subsequently converted in a multistep process to carbonitrides via treatment with high temperatures in reactive gases including ammonia. Grazing incidence small-angle X-ray scattering suggests the presence of ordered mesostructures in as-made BCP-niobia films without further annealing, consistent with a distorted alternating gyroid morphology that is retained upon thermal treatments. Wide-angle X-ray scattering confirms the synthesis of phase-pure niobium carbonitride nanocrystals with rock-salt lattices within the mesoscale networks. Electrical transport measurements of unpatterned thin films show initial exponential rise in resistivity characteristic of thermal activation in granular systems down to 12.8 K, at which point resistivity drops to zero into a superconducting state. Magnetoresistance measurements determine the superconducting upper critical field to be over 16 T, demonstrating material quality on par with niobium carbonitrides obtained from traditional solid-state synthesis methods. Here. we discuss how such cost-effective and scalable solution-based quantum materials fabrication approaches may be integrated into existing microelectronics processing, promising the emergence of a technology with tremendous academic and industrial potential by combining the capabilities of soft matter self-assembly with quantum materials.

36 MATERIALS SCIENCE↗

DOE OSTI2015

In-vitro study of copper doped SiO{sub 2}-CaO-P{sub 2}O{sub 5} system for bioactivity and antimicrobial properties

Samples of the xCuO-(45-x)CaO-10P{sub 2}O{sub 5}-45SiO{sub 2} system (x varies from 0 to 4 mole%) have been synthesized for application as biomaterials to slow or inhibit the growth of living organisms (fungi and other pathogenic microorganisms) by the combination of sol-gel and co-precipitation processes. Prepared samples have been characterized by X-Ray Diffraction, Fourier Transform Infra-Red and Field Emission Scanning Electron Microscopy techniques before and after immersion in simulated body fluid. Antimicrobial activity of samples has been investigated against Staphylococcus aureus. Releasing of Cu{sup 2+}and other ions in the simulated body fluid has been determined by Atomic Absorption Spectroscopy to ensure the use of prepared material as biomaterial with good antibacterial properties.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Preparation & characterization of SiO{sub 2} interface layer by dip coating technique on carbon fibre for C{sub f}/SiC composites

Carbon fibres (C{sub f}) are one of the most important reinforced materials for ceramic matrix composites such as C{sub f} - SiC composites and they are generally sought for high temperature applications in as space application, nuclear reactor and automobile industries. But the major problem arise when C{sub f} reinforced composites exposed to high temperature in an oxidizing environment, C{sub f} react with oxygen and burnt away. In present work, we have studied the effect of silica (SiO{sub 2}) coating as a protective coating on C{sub f} for the C{sub f} / SiC composites. The silica solution prepared by the sol-gel process and coating on C{sub f} is done by dip coating technique with varying the withdrawing speed i.e. 2, 5, 8 mm/s with fixed dipping cycle (3 Nos.). The uniform silica coating on the C{sub f} is shown by the Scanning Electron Microscope (SEM) analysis. The tensile test shows the increase in tensile strength with respect to increase in withdrawing speed. The isothermal oxidation analysis confirmed enhancement of oxidation resistance of silica coated C{sub f} as compared tothe uncoated C{sub f}.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Self-assembly and photoluminescence evolution of hydrophilic and hydrophobic quantum dots in sol–gel processes

Graphical abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were assembled into various morphologies including chain, hollow spheres, fibers, and ring structures through sol–gel processes. The PL properties during assembly as investigated. - Highlights: • Highly luminescent quantum dots (QDs) were synthesized from several ligands. • The evolution of PL in self-assembly via sol–gel processes was investigated. • CdTe QDs were assembled into a chain by controlling hydrolysis and condensation reactions. • Hollow spheres, fibers, and ring structures were created via CdSe/ZnS QDs in sol–gel processes. - Abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were synthesized from several ligands to investigate the PL evolution in QD self-assembly via sol–gel processes. After ligand exchange, CdTe QDs were assembled into a chain by controlling the hydrolysis and condensation reaction of 3-mercaptopropyl-trimethoxysilane. The chain was then coated with a SiO{sub 2} shell from tetraethyl orthosilicate (TEOS). Hollow spheres, fibers, and ring structures were created from CdSe/ZnS QDs via various sol–gel processes. CdTe QDs revealed red-shifted and narrowed PL spectrum after assembly compared with their initial one. In contrast, the red-shift of PL spectra of CdSe/ZnS QDs is small. By optimizing experimental conditions, SiO{sub 2} spheres with multiple CdSe/ZnS QDs were fabricated using TEOS and MPS. The QDs in these SiO{sub 2} spheres retained their initial PL properties. This result is useful for application because of their high stability and high PL efficiency of 33%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N 2 environment. This enhancement is exhibited in a 1-sun iV OC of 735 mV when annealed in O 2 rather than 708 mV in N 2.

14 SOLAR ENERGY↗

DOE OSTI2015

Interfacial reaction in SiC{sub f}/Ti-6Al-4V composite by using transmission electron microscopy

The interfacial reactions of continuous SiC fiber reinforced Ti-6Al-4V matrix composite (SiC{sub f}/Ti-6Al-4V composite) and continuous SiC fiber coated by C reinforced Ti-6Al-4V matrix composite (SiC{sub f}/C/Ti-6Al-4V composite) were investigated by using micro-beam electron diffraction (MBED) and energy disperse spectroscopy (EDS) on transmission electron microscopy (TEM). The sequence of the interfacial reactions in the as-processed and exposed at 900°C for 50h SiC{sub f}/Ti-6Al-4V composites can be described as SiC||TiC||Ti{sub 5}Si{sub 3} + TiC||Ti-6Al-4V and SiC||TiC||Ti{sub 5}Si{sub 3}||TiC||Ti{sub 5}Si{sub 3}||TiC||Ti{sub 5}Si{sub 3}||Ti-6Al-4V, respectively. Additionally, both in as-processed and exposed composites, Ti{sub 3}SiC{sub 2} and Ti{sub 3}Si are absent at the interfaces. For the SiC{sub f}/C/Ti-6Al-4V composite exposed at 900 °C for 50 h, the sequence of the interfacial reaction can be described as SiC||C||TiC{sub F}||TiC{sub C}||Ti-6Al-4V before C coating is completely consumed by interfacial reaction. When interfacial reaction consumes C coating completely, the sequence of the interfacial reaction can be described as SiC||TiC||Ti{sub 5}Si{sub 3}||TiC||Ti-6Al-4V. Furthermore, in SiC{sub f}/C/Ti-6Al-4V composite, C coating can absolutely prevent Si diffusion from SiC fiber to matrix. Basing on these results, the model of formation process of the interfacial reaction products in the composites was proposed. - Highlights: • We obtained the sequence of the interfacial reactions in the as-processed and exposed at 900 °C for 50 h SiC{sub f}/Ti-6Al-4 V composites as well as in the SiC{sub f}/C/Ti-6Al-4 V composite exposed at 900 °C for 50 h. • We verified that both in as-processed and exposed SiC{sub f}/Ti-6Al-4 V composites, Ti{sub 3}SiC{sub 2} and Ti{sub 3}Si are absent at the interfaces. • Carbon coating can absolutely prevent silicon diffusion from SiC fiber to matrix. • Basing on these results, the model of formation process of the interfacial reaction products in the composites was proposed.

36 MATERIALS SCIENCE↗

DOE OSTI2013

A simple facile approach to large scale synthesis of high specific surface area silicon nanoparticles

An inexpensive, facile, and high throughput synthesis of silicon nanoparticles was achieved by the mechano-chemical reduction reaction of magnesium silicide (Mg{sub 2}Si) and silicon monoxide (SiO) using a high energy mechanical milling (HEMM) technique followed by acid leaching. Characterization of the resultant product using X-Ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and surface area analyses was performed at various stages of the synthesis process. XRD patterns show that the final product formed is single phase silicon and the nanocrystalline nature was confirmed by the shifted transverse optical (TO) band, characteristic of nc-Si determined by Raman analysis. SEM and TEM shows the presence of particles of different sizes in the range of few nanometers to agglomerates of few microns which is consistent with products obtained from mechanical milling. BET measurements show a very high specific surface area (SSA) of ∼190 m{sup 2}/g obtained due to acid leaching which is also validated by the porous nature of the particles confirmed by the SEM images. - Graphical abstract: Schematic showing the large scale production of nanosized silicon and BET surface area of the product formed at various stages.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2018

Fabrication of Silicon Nanowire Forests for Thermoelectric Applications by Metal-Assisted Chemical Etching

Silicon nanowires, whose thermal conductivity is strongly reduced with respect to that of the bulk silicon, are very promising for high-efficient thermoelectric conversion. This work focuses on the development of a technique for the fabrication of thermoelectric generators which are based on vertical silicon nanowire forests, achieved through a metal-assisted chemical etch. As heavily doped nanowires are essential in thermoelectric applications, this chemical process has been applied both on lightly and on highly doped (> 10{sup 19} cm{sup −3}) silicon substrates. A comparison of the results shows that the etch behaves in a completely distinct way when applied to the differently doped substrates. The results of this comparison and a preliminary insight into the diverse behavior occurred are reported. The different initial nucleation of silver, which determines the hole injection, essential to the etching of silicon, seems to be the key point of this different behavior.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Size dependent structural, vibrational and magnetic properties of BiFeO{sub 3} and core-shell structured BiFeO{sub 3}@SiO{sub 2} nanoparticles

Bulk BiFeO{sub 3}, BiFeO{sub 3} nanoparticles and core-shell structured BiFeO{sub 3}@SiO{sub 2} nanoparticles were synthesized by solid state reaction method, sol-gel and Stöber process (SiO{sub 2} shell) respectively. Transmission electron microscopy image confirmed the core-shell structure of BiFeO{sub 3}@SiO{sub 2} nanoparticles with BiFeO3 core ∼50-90 nm and SiO{sub 2} shell ∼16 nm. X-ray diffraction and FTIR spectroscopy results showed the presence of distorted rhombohedral structure with R3c space group in all three samples. The magnetic measurement indicated the existence of room-temperature weak ferromagnetism in core-shell BiFeO{sub 3}@SiO{sub 2} nanoparticles and BiFeO3 nanoparticles, whereas bulk BiFeO{sub 3} showed antiferromagnteic nature. Electron Spin Resonance results confirmed the enhancement in magnetic properties of coreshell structured BiFeO{sub 3}@SiO{sub 2} nanoparticles in comparison with BiFeO{sub 3} nanoparticles and bulk BiFeO{sub 3}.

77 NANOSCIENCE AND NANOTECHNOLOGY↗