Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “power switching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Low-power anisotropic molecular electronic memristors

A molecular electronic memristor, programmable resistive memory device, promises to revolutionize next-generation flexible data storage units, offering fast, dense and ultralow power solutions. Here we report anisotropic resistive switching in molecular κ-(BEDT-TTF) 2 Cu[N(CN) 2 ]Cl memristors, consisting of alternatively segregated bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and Cu[N(CN) 2 ]Cl layers. Electron resistance switching behavior controlled by charge tunneling in molecular memristors show a low set voltage of 0.5 V (10 V/cm) with the ON/OFF ratio of 2.3×10 3 along a-axis and a high-level endurance of 1.25×10 4 cycles along all axes. Finally, the findings of such molecular electronic crystals promise for low-power data storage memristors.

36 MATERIALS SCIENCE↗
NASA NTRS1999

Investigation Into The Effects of Microsecond Power Line Transients On Line-Connected Capacitors

An investigation was conducted into the effect of power-line transients on capacitors used by NASA and installed on platform primary power inputs to avionics. The purpose was to investigate whether capacitor voltage rating needs to be derated for expected spike potentials. Concerns had been voiced in the past by NASA suppliers that MIL-STD-461 CS06-like requirements were overly harsh and led to physically large capacitors. The author had previously predicted that electrical-switching spike requirements representative of actual power-line transient potentials, durations and source impedance would require no derating. This investigation bore out that prediction. It was further determined that traditional low source impedance CS06-like transients also will not damage a capacitor, although the spikes themselves are not nearly as well filtered. This report should be used to allay fears that CS06-like requirements drive capacitor voltage derating. Only that derating required by the relatively long duration transients in power quality specification need concern the equipment designer.

Javor, Ken↗
NASA NTRS2000

Investigation into the Effects of Microsecond Power Line Transients on Line-Connected Capacitors

An investigation was conducted into the effect of power-line transients on capacitors used by NASA and installed on platform primary power inputs to avionics. The purpose was to investigate whether capacitor voltage ratings needs to be derated for expected spike potentials. Concerns had been voiced in the past by NASA suppliers that MIL-STD-461 CS06-like requirements were overly harsh and led to physically large capacitors. The author had previously predicted that electrical-switching spike requirements representative of actual power-line transient potentials, durations. and source impedance would require no derating. This investigation bore out that prediction. It was further determined that traditional low source impedance CS06-like transients also will not damage a capacitor, although the spikes themselves are not nearly as well filtered. This report should be used to allay fears that CS06-like requirements drive capacitor voltage derating. Only that derating required by the relatively long duration transients in power quality specification need concern the equipment designer.

Javor, K.↗
NASA NTRS1996

Megavolt, Multigigawatt Pulsed Plasma Switch

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Lee, Ja H.↗
DOE OSTI2022

1 kV, 10-kW SiC-Based Quadruple Active Bridge DCX Stage in a DC to Three-Phase AC Module for Medium-Voltage Grid Integration

Interfacing low voltage dc to medium voltage three-phase ac grid is often based on series-stackable modular converter architectures. To minimize energy storage requirements, it is advantageous to employ a quadruple active bridge (QAB) stage operating as a "dc transformer" in each stackable module. The QAB stage offers three isolated dc link voltages, which then allow for flexible stacking of three single-phase dc-to-ac inverter stages. Each of the module phases processes a pulsating power having a component at twice the line frequency. This presents a challenge in maintaining zero voltage switching (ZVS) on the secondary sides of the QAB during low-power portions of the line cycle. This article is focused on the design of the QAB stage. A detailed analysis of ZVS switching waveforms is presented, including effects of nonlinear device capacitances. It is shown how ZVS can be achieved at all times using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. Analytical expressions are given for the optimal values of the magnetizing inductance and the dead times of the QAB primary and secondary bridges. This approach is verified by experimental results on a 1 kV, 10-kW SiC-based prototype, demonstrating a relatively flat efficiency curve with a peak efficiency of 97.1% at 75% load.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Farm-level Interactions Study of a Novel Tri-port Soft-switching Medium-Voltage String Inverter (MVSI) based Large-scale PV-Plus-Storage Farms

A medium-voltage photovoltaic power conversion unit supported by battery based on a novel topology of soft switching solid state transformer is presented in this paper. It can reduce the Levelized Cost of Energy (LCOE) of PVS farm in an extended degree. However, its capability to provide grid-support services, such as frequency response, reactive power support, etc, have not been demonstrated. A series/parallel combination of these modules form a large 20 MVA solar farm. To validate them with reduced computation burden, a small-signal model of MVSI is firstly derived and validated in this paper. The model has been validated to match the full-switch model in both steady-state and dynamic conditions. Next, a farm-level simulation based on the proved small-signal model was implemented to demonstrate grid-support services. Real irradiation date from NREL is used to show the operational capabilities of the system. As a result, the overall farm is simulated based on MATLAB/Simulink domain to check the performance for various cases namely: power transfer from dc-ac side, reactive power support during grid voltage sag and utilization of battery during grid voltage disturbance or partial shading over PV panels.

14 SOLAR ENERGY↗
NASA NTRS1989

High-voltage, full-floating 10-MHz square-wave generator with phase control

Wherein a fast (50 ns) rise-time high-frequency square-wave generator capable of switching between arbitrary voltages of high potential difference (1000 V or more) is described utilizing solid-state circuitry of low power consumption. Power field effect transistors are used as the active switching element, which afford compact size and simplified circuit construction. With the addition of monostable multivibrators, high-voltage square-wave pulse trains of controllable phase are produced. The generator should find application in a wide variety of situations where fast switching between high voltages is required, such as in time-of-flight, coincidence, and beams-modulation experiments.

Bernius, Mark T.↗
NASA NTRS2010

NASA Engineering and Safety Center Technical Bulletin No. 10-01: Power MOSFET Thermal Instability

In the quest for faster switching times and lower “on resistance” the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), produced since 1998, has achieved most intended goals. Unfortunately, lower “on resistance” and higher switching speeds in the designs now being produced allow the charge carrier dominated region to develop conditions that could lead to thermal runaway. Temperatures above 450º C on any location within the part can cause the metals to begin migrating causing a fatal short circuit.

Metal-Oxide Semiconductor Field-Effect Transistor ↗
NASA NTRS2002

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Ponchak, George E.↗
NASA NTRS2013

Shuttle Topography Data Inform Solar Power Analysis

The next time you flip on a light switch, there s a chance that you could be benefitting from data originally acquired during the Space Shuttle Program. An effort spearheaded by Jet Propulsion Laboratory (JPL) and the National Geospatial-Intelligence Agency (NGA) in 2000 put together the first near-global elevation map of the Earth ever assembled, which has found use in everything from 3D terrain maps to models that inform solar power production. For the project, called the Shuttle Radar Topography Mission (SRTM), engineers at JPL designed a 60-meter mast that was fitted onto Shuttle Endeavour. Once deployed in space, an antenna attached to the end of the mast worked in combination with another antenna on the shuttle to simultaneously collect data from two perspectives. Just as having two eyes makes depth perception possible, the SRTM data sets could be combined to form an accurate picture of the Earth s surface elevations, the first hight-detail, near-global elevation map ever assembled. What made SRTM unique was not just its surface mapping capabilities but the completeness of the data it acquired. Over the course of 11 days, the shuttle orbited the Earth nearly 180 times, covering everything between the 60deg north and 54deg south latitudes, or roughly 80 percent of the world s total landmass. Of that targeted land area, 95 percent was mapped at least twice, and 24 percent was mapped at least four times. Following several years of processing, NASA released the data to the public in partnership with NGA. Robert Crippen, a member of the SRTM science team, says that the data have proven useful in a variety of fields. "Satellites have produced vast amounts of remote sensing data, which over the years have been mostly two-dimensional. But the Earth s surface is three-dimensional. Detailed topographic data give us the means to visualize and analyze remote sensing data in their natural three-dimensional structure, facilitating a greater understanding of the features and processes taking place on Earth."

Source record↗
NASA NTRS2004

Advanced Electrical Materials and Components Being Developed

All aerospace systems require power management and distribution (PMAD) between the energy and power source and the loads. The PMAD subsystem can be broadly described as the conditioning and control of unregulated power from the energy source and its transmission to a power bus for distribution to the intended loads. All power and control circuits for PMAD require electrical components for switching, energy storage, voltage-to-current transformation, filtering, regulation, protection, and isolation. Advanced electrical materials and component development technology is a key technology to increasing the power density, efficiency, reliability, and operating temperature of the PMAD. The primary means to develop advanced electrical components is to develop new and/or significantly improved electronic materials for capacitors, magnetic components, and semiconductor switches and diodes. The next important step is to develop the processing techniques to fabricate electrical and electronic components that exceed the specifications of presently available state-of-the-art components. The NASA Glenn Research Center's advanced electrical materials and component development technology task is focused on the following three areas: 1) New and/or improved dielectric materials for the development of power capacitors with increased capacitance volumetric efficiency, energy density, and operating temperature; 2) New and/or improved high-frequency, high-temperature soft magnetic materials for the development of transformers and inductors with increased power density, energy density, electrical efficiency, and operating temperature; 3) Packaged high-temperature, high-power density, high-voltage, and low-loss SiC diodes and switches.

Schwarze, Gene E.↗
NASA NTRS2017

Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

Power semiconductor devices↗
DOE OSTI2022

Load Shed Recovery With Transmission Switching and Intentional Islanding Methods After (N-2) Line Contingencies

Changing power system configuration may result in load shed recovery (LSR) because topology change can provide power flow control in meshed network. Some topologies may favor generation redispatch as compared to others and can eliminate line congestion which leads to LSR. One of the known methods for topology change is called transmission switching (TS) and research conducted in the past showed that TS is an effective means of mitigating load shedding. Another method of topology control is intentional islanding (IIS). In this manuscript, we explore IIS as a potential solution for LSR. IIS based on generator coherency has been presented in literature for mitigating cascading failures. However, IIS has not been explored solely as a LSR mechanism. In this paper, we compare the LSR based on IIS with well known LSR algorithm based on TS. The comparison is performed for IEEE 39-bus system and IEEE 118- bus system. The results show that IIS has a potential to perform better than TS in terms of computational efficiency and LSR.

42 ENGINEERING↗
NASA NTRS2001

Modular 5-kW Power-Processing Unit Being Developed for the Next-Generation Ion Engine

The NASA Glenn Research Center is developing a 5- to 10-kW ion engine for a broad range of mission applications. Simultaneously, a 5-kW breadboard power-processing unit (PPU) is being designed and fabricated by Boeing Electron Dynamic Devices, Torrance, California, under contract with Glenn. The beam supply, which processes up to 90 percent of the power into this unit, consists of four 1.1-kW power modules connected in parallel, equally sharing the output current. The modular design allows scalability to higher powers as well as the possibility of implementing an N + 1 redundant beam supply. A novel phaseshifted/pulse-width-modulated, dual full-bridge topology was chosen for this module design for its efficient switching characteristics. A breadboard version of the beam power supply module was assembled. Efficiencies ranging between 91.6 and 96.9 percent were measured for an input voltage range of 80 to 160 V, an output voltage range of 800 to 1500 V, and output powers from 0.3 to 1.0 kW. This beam supply could result in a PPU with a total efficiency between 93 and 95 percent at a nominal input voltage of 100 V. This is up to a 4-percent improvement over the state-of-the-art PPU used for the Deep Space 1 mission. A flight-packaged PPU is expected to weigh no more than 15 kg, which represents a 50-percent reduction in specific mass from the Deep Space 1 design. This will make 5-kW ion propulsion very attractive for many planetary missions.

Pinero, Luis R.↗
DOE OSTI2020

Soft Switching Over the Entire Line Cycle for a Quadruple Active Bridge DCX in a DC to Three-Phase AC Module

This paper is focused on a transformer-isolated quadruple active bridge (QAB) dc-dc converter loaded by three full-bridge dc-ac inverters. The QAB functions as a "DC trans-former" (DCX) in the dc-to-three-phase ac module. The QAB outputs provide time-varying power at twice the line frequency, which presents challenges in maintaining zero voltage switching (ZVS) on the secondary sides during low-power portions of the line cycle. It is shown how ZVS can be achieved in a phase, even at zero-power transfer, using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. The approach is particularly effective in high-voltage applications using SiC MOSFETs, where reductions in switching loss outweigh additional conduction losses due to the circulating currents. A detailed analysis of ZVS switching waveforms at the zero power transfer is presented, including effects of nonlinear device capacitances. Analytical expressions are given for the optimal values of the magnetizing inductance and dead times of the QAB primary and secondary bridges. The approach is verified by experimental results on a 600 V, 4 kW prototype, demonstrating greater than 98.5% efficiency from 1 kW to 4 kW, with a peak efficiency of 99.0%. Compared to conventionally operated prototype, a 54% reduction in total loss is achieved at rated power.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.

Silicon Carbide, Monolithic, Bidirectional, FourQu↗