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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Chirped-Superlattice, Blocked-Intersubband QWIP

An Al(x)Ga(1-x)As/GaAs quantum-well infrared photodetector (QWIP) of the blocked-intersubband-detector (BID) type, now undergoing development, features a chirped (that is, aperiodic) superlattice. The purpose of the chirped superlattice is to increase the quantum efficiency of the device. A somewhat lengthy background discussion is necessary to give meaning to a brief description of the present developmental QWIP. A BID QWIP was described in "MQW Based Block Intersubband Detector for Low-Background Operation" (NPO-21073), NASA Tech Briefs Vol. 25, No. 7 (July 2001), page 46. To recapitulate: The BID design was conceived in response to the deleterious effects of operation of a QWIP at low temperature under low background radiation. These effects can be summarized as a buildup of space charge and an associated high impedance and diminution of responsivity with increasing modulation frequency. The BID design, which reduces these deleterious effects, calls for a heavily doped multiple-quantum-well (MQW) emitter section with barriers that are thinner than in prior MQW devices. The thinning of the barriers results in a large overlap of sublevel wave functions, thereby creating a miniband. Because of sequential resonant quantum-mechanical tunneling of electrons from the negative ohmic contact to and between wells, any space charge is quickly neutralized. At the same time, what would otherwise be a large component of dark current attributable to tunneling current through the whole device is suppressed by placing a relatively thick, undoped, impurity-free AlxGa1 x As blocking barrier layer between the MQW emitter section and the positive ohmic contact. [This layer is similar to the thick, undoped Al(x)Ga(1-x)As layers used in photodetectors of the blocked-impurity-band (BIB) type.] Notwithstanding the aforementioned advantage afforded by the BID design, the responsivity of a BID QWIP is very low because of low collection efficiency, which, in turn, is a result of low electrostatic- potential drop across the superlattice emitter. Because the emitter must be electrically conductive to prevent the buildup of space charge in depleted quantum wells, most of the externally applied bias voltage drop occurs across the blocking-barrier layer. This completes the background discussion. In the developmental QWIP, the periodic superlattice of the prior BID design is to be replaced with the chirped superlattice, which is expected to provide a built-in electric field. As a result, the efficiency of collection of photoexcited charge carriers (and, hence, the net quantum efficiency and thus responsivity) should increase significantly.

Gunapala, Sarath↗
NASA NTRS2012

Development of a Robust, High Current, Low Power Field Emission Electron Gun for a Spaceflight Reflectron Time-of-Flight Mass Spectrometer

Carbon materials, including carbon nanotubes (CNTs) and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD), have been of considerable interest for field emission applications for over a decade. In particular, robust field emission materials are compelling for space applications due to the low power consumption and potential for miniaturization. A reflectron time-of-flight mass spectrometer (TOF-MS) under development for in situ measurements on the Moon and other Solar System bodies uses a field emitter to generate ions from gaseous samples, using electron ionization. For these unusual environments, robustness, reliability, and long life are of paramount importance, and to this end, we have explored the field emission properties and lifetime of carbon nanotubes and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) thin films, the latter developed and patented by Argonne National Laboratory. We will present recent investigations of N-UNCD as a robust field emitter, revealing that this material offers stable performance in high vacuum for up to 1000 hours with threshold voltage for emission of about 3-4 V/lJm and current densities in the range of tens of microA. Optimizing the mass resolution and sensitivity of such a mass spectrometer has also been enabled by a parallel effort to scale up a CNT emitter to an array measuring 2 mm x 40 mm. Through simulation and experiment of the new extended format emitter, we have determined that focusing the electron beam is limited due to the angular spread of the emitted electrons. This dispersion effect can be reduced through modification of the electron gun geometry, but this reduces the current reaching the ionization region. By increasing the transmission efficiency of the electron beam to the anode, we have increased the anode current by two orders of magnitude to realize a corresponding enhancement in instrument sensitivity, at a moderate cost to mass resolution. We will report recent experimental and modeling results to describe the performance of a field emission electron gun as employed in the Volatile Analysis by Pyrolysis of Regolith (VAPoR) TOF-MS prototype.

Southard, Adrian E.↗
NASA NTRSDate not supplied

Effects of Environmental Exposure on Barium Oxide Cathode Operation

Hollow cathode assemblies (HCA) are typically designed around a cylindrical emitter for the electron source. Barium oxide (BaO) emitters are one type of emitter commonly used, which consists of a porous tungsten matrix impregnated with a mixture of barium oxide, calcium oxide, and alumina. Barium oxide emitters are susceptible to poisoning by a variety of substances, including oxygen, water vapor, carbon dioxide, and air. Poisoning can occur both during operation and exposure during storage. Water vapor is the primary contaminant of concern with ground exposure, and has been historically controlled by appropriate storage and handling procedures. Over the past several years, NASA Glenn Research Center (GRC)has been testing BaO cathodes to observe the effects on cathode operation after extended environmental exposures

electric propulsion↗
NASA NTRS2020

Life-Limiting Factors of the CMTS for Precision Pointing Observatory Missions

Development of the next generation Colloid Micronewton Thruster System (CMTS) has focused on incorporation of complete redundancy, and extension of life beyond the 3,458 hrs previously demonstrated to the >40,000 hrs necessary for future missions. The present life- limiting factor of the CMTS is impingement of the electrospray beam onto the electrostatic grids, which is mitigated by the use of porous grid structures to adsorb and trap the small fraction (typically <0.5%) of the beam that intercepts the grids. A detailed alignment survey using a single emitter electrospray source has been performed in order to establish thruster production requirements and produce data necessary for lifetime model validation. Capillary emitter tilt (Θ), lateral displacement (X), and source spacing (Z), where independently assessed for their impact on changes in grid interception, as well as combined lateral and tilt displacement. Throughout testing, incremental improvements were made to reduce facility effects that impacted measured results. The data validate the alignment tolerances used in design and fabrication of the CMTS. Increased interception was not observed until emitter tilt exceeded 3X, lateral misalignment exceeded 5X, and emitter spacing >1.5X tolerance requirements. Results also indicate that, at target grid impingement levels <0.5%, facility effects begin to dominate measured grid currents and must be mitigated for more accurate assessments of thruster life.

Ziemer, John K.↗
DOE OSTI2021

Methods, apparatus and systems for generating and superheating vapor under sunlight

A solar vapor generator includes an absorber to absorb sunlight and an emitter, in thermal communication with the absorber, to radiatively evaporate a liquid under less than 1 sun illumination and without pressurization. The emitter is physically separated from the liquid, substantially reducing fouling of the emitter. The absorber and the emitter may also be heated to temperatures higher than the boiling point of the liquid and may thus may be used to further superheat the vapor. Solar vapor generation can provide the basis for many sustainable desalination, sanitization, and process heating technologies.

Chen, Gang↗
DOE OSTI2022

Efficient black silicon photovoltaic devices with enhanced blue response

A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.

Oh, Jihun↗
DOE OSTI2022

Dual Energy Electron Storage Ring Cooler Design for Relativistic Ion Beams

Collider experiments demand small beam emittances in order to achieve high luminosity. For light particles such as electrons, there exists a natural synchrotron radiation damping resulting in low emittance beams at equilibrium. In the case of heavy particle beams such as proton or ion beams, there is no significant synchrotron radiation damping effect and some cooling mechanism is needed to get to low emittance beams. A dual energy storage ring cooler is a novel concept proposed to cool hadron beams at higher energies. The design consists of two rings: a low energy ring and a high energy ring connected by the energy recovering linac (ERL) that provides the necessary energy difference. The low energy ring has an electron cooler where the cooling interaction takes place between the electron and hadron beams whereas electron beam going through the high energy ring undergoes synchrotron radiation damping. In this document, we present a possible design of a dual energy storage ring-based electron cooler for high energy proton beam cooling suitable for the Electron Ion Collider (EIC) to be built at Brookhaven National laboratory (BNL). A special feature of a dual energy storage ring cooler design is that the electron beam energy in the low energy section must be tuned to match the hadron beam velocity in the cooling section, and the electron beam energy in the high energy section is chosen to provide an adequate synchrotron radiation damping. In addition, the ring optics design is carried out considering chromaticity correction, dynamic aperture, momentum aperture, beam lifetime, radiation damping and the intrabeam scattering effect. Finally, the cooling performance is simulated for 275 GeV proton beams at the top energy of the EIC. In such a collider it is desirable to cool the hadron beams to balance the emittance growth rates due to intra-beam scattering (IBS) to maintain a high luminosity during the collision runs. In such a situation, a dual energy storage ring based cooler could be a practical approach to be used for hadron beam cooling.

Dhital, Bhawin↗
DOE OSTI2022

Rational nano-coulomb ionization

An ion pulse generator includes a triboelectric generator, an ion emitter and a conductive surface. The triboelectric generator includes a first electrode, a spaced apart second electrode and a first triboelectric layer. The triboelectric generator generates a predetermined amount of charge as a result of relative movement of the first triboelectric layer. The ion emitter is electrically coupled to the first electrode. The conductive surface is electrically coupled to the second electrode and is spaced apart from the ion emitter at a predetermined distance. Generation of the predetermined amount of charge causes formation of ions between the ion emitter and the conductive surface.

Li, Anyin↗
DOE OSTI2024

Apparatuses and methods involving DC voltage conversion using photonic transformers

In certain examples, methods and semiconductor structures are directed to an apparatus including a photon emitter such as an LED which operates over an emission wavelength range and a photo-voltaic device arranged relative to the photon emitter to provide index-matched optical coupling between the photo-voltaic device and the photon emitter for an emission wavelength range of the photon emitter.

Fan, Shanhui↗
DOE OSTI2024

Systems and methods for laser diode array having integrated microchannel cooling

The present disclosure relates to a laser diode system. The system may have at least one laser diode emitter having a substrate, at least one laser diode supported on the substrate, and a facet which a laser beam generated by the laser diode is emitted. A cooling subsystem is included which is disposed in contact with the substrate of the laser diode emitter. The cooling subsystem includes a plurality of cooling fins forming a plurality of elongated channels for circulating a cooling fluid therethrough to cool the laser diode emitter. The cooling fluid also flows over the facet of the laser diode emitter.

Kotovsky, Jack↗
DOE OSTI2025

Efficient Broadband Terahertz Generation by Above‐Band‐Gap Excitation of the Pyroelectric ZnSnN 2

Terahertz (THz) radiation is a powerful probe of low-energy excitations in all phases of matter. However, it remains a challenge to find materials that efficiently generate THz radiation in a broad range of frequencies following optical excitation. Here, we investigate a pyroelectric material, ZnSnN 2 , and find that its above-band-gap excitation results in the efficient formation of an ultrafast photocurrent generating THz radiation. The resulting THz electric field spans a frequency range from below 1 THz to above 30 THz. The results suggest that the photocurrent is primarily driven by an ultrafast pyroelectric effect where the photo-excited carriers screen the spontaneous electric polarization of ZnSnN 2 . Strong structural disorder reduces the photocarrier lifetime significantly and, thus, enables broadband operation. ZnSnN2 shows a similar THz-emitter performance as the best spintronic THz emitters regarding bandwidth and amplitude. The study unveils the large potential of pyroelectric materials as efficient and broadband THz emitters with built-in bias fields.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ultimate brightness of a medium-energy synchrotron light source at operational beam intensity

Synchrotron light sources are key instruments of modern science, providing unique opportunities for groundbreaking studies in diverse scientific disciplines and driving innovation in numerous scientific and technological fields. Fourth-generation light sources provide unprecedented capabilities in imaging, spectroscopy and diffraction techniques. Ultimate brightness is the key to advancing to a smaller scale, faster response, and higher data measurement and processing rate. The brightness is primarily determined by the electron beam emittance and energy spread at operational intensity. A common feature of fourth-generation synchrotrons is the short length of the electron bunches combined with a very small transverse beam size. Consequently, the high particle density leads to strong collective effects that significantly increase the emittance and limit the achievable brightness at operational beam intensity. In this article, we summarize our studies of the emittance and brightness scaled with the beam energy and intensity, taking into account the effects of intrabeam scattering, beam-impedance interaction and bunch lengthening provided by higher-harmonic RF systems to identify optimal combinations of machine and beam parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors

Abstract Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Re-Analysis of DARHT Axis 2 S4 Magnet Sweep Measurements

The Dual-Axis Radiographic Hydrodynamic Test (DARHT) facility provides flash radiography capabilities using two electron Linear Induction Accelerators (LIA’s). Understanding fundamental properties of the electron beams is essential to optimizing spot size and dose for radiography. This work describes distribution measurements of a single-kicked electron beam (16.5MeV, 1.7kA, 60ns) at a location downstream at imaging station C on DARHT Axis 2. The beam at station C is focused by the S4 solenoid located upstream. The beam distribution is measured by imaging optical transition radiation (OTR) from electrons striking a 51-µm thick titanium foil. This data and analysis were originally published by Ekdahl. The results here are a re-analysis of the asymmetric halo emittance contribution as compared to the emittance resulting from the FWHM of the distribution. This is accomplished using xtr2 fits to the data which include non-linear magnetic field effects in S4. Also examined are the calculated S4 spherical aberration contributions to the emittance using xtr.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Fractal Nanostructured Solar Selective Surfaces for Next Gen Concentrating Solar Power (Final Report)

This project reports a novel coating with enhanced solar absorptance and reduced thermal emittance with high efficiency at elevated temperature for next-generation concentrated solar power (CSP) plants, with targeted operating temperatures around 750°C. Highly textured single and multimetallic oxide coatings were electrodeposited onto Inconel substrate by systematically varying the composition and process parameters. The optimized coating exhibited micro-to-nano structures designed to match the wavelengths in the visible region of the solar spectrum. These structures facilitate resonant absorption of solar radiation, significantly boosting solar absorption and accommodating thermal stress during high temperature exposure. A high solar absorptance exceeding 0.985 and a low thermal emittance below 0.5, yielding a thermal efficiency near 95%, was achieved for the optimized coatings without any anti-reflective overcoat, that remained robust after 750 h of isothermal exposure to 750°C in air. The coatings are also robust to severe mechanical and environmental stressors. The innovative approach presented in this study demonstrates the potential for tailoring air-stable solar absorber coatings to achieve high absorption, low emittance, and excellent high-temperature endurance, meeting the rigorous demands of next-generation CSP systems. A technoeconomic analysis reveals the economic advantage of the coatings for Gen3 CSP installations in different geographical zones globally.

14 SOLAR ENERGY↗
DOE OSTI2023

Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd 3 P 2 Quantum Dots

Fast near-IR (NIR) emitters are highly valuable in telecommunications and biological imaging. The most established NIR emitters are epitaxially grown In x Ga 1-x As quantum dots (QDs), but epitaxial growth has several disadvantages. Colloidal synthesis is a viable alternative that produces a few NIR-emitting materials, but they suffer from long photoluminescence (PL) times. These long PL times are intrinsic in some NIR materials (PbS, PbSe) but are attributed to emission from bright trapped carrier states in others. We show that Cd 3 P 2 QDs possess substantial trap emission with radiative times >10 1 ns. Surface passivation through shell growth or coordination of Lewis acids is shown to accelerate the NIR emission from Cd 3 P 2 QDs by decreasing the amount of trap emission. This finding brings us one step closer to the application of colloidally synthesized QDs as quantum emitters.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗