Sintering and characterization of SrBi{sub 2}Ta{sub 2}O{sub 9} obtained by high-pressure processing at low temperatures
High-pressure processing is a very attractive approach for the production of materials with new and/or improved properties. In this work, pressures in the order of 7.7 GPa and 2.5 GPa were induced in SrBi{sub 2}Ta{sub 2}O{sub 9} samples at different temperatures placed in a specific reaction cell and generated different effects on phase formation. The microstructural evolution during high-pressure processing was investigated by scanning electron microscopy in association with energy dispersion spectroscopy and with the support of an X-ray diffraction analyzer. Frequency response analysis was used to obtain the dielectric curves by electrochemical impedance spectroscopy. A SrBi{sub 2}Ta{sub 2}O{sub 9} single-phase sample, treated at 2.5 GPa and 900 °C, was used to evaluate the electrical properties, obtaining a dielectric response similar to SrBi{sub 2}Ta{sub 2}O{sub 9} samples sintered by conventional processes at temperatures above 1000 °C. In addition, by this method, it was possible to obtain ceramics with uniform microstructure and a relative density of 93%. - Highlights: • The first production of SrBi{sub 2}Ta{sub 2}O{sub 9} using the technique of high-pressure processing. • The ability to produce single-phase SrBi{sub 2}Ta{sub 2}O{sub 9} treated at 2.5 GPa and 900 °C. • The electrical properties are compatible with SBT sintered at high temperatures.