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At least 847 records · Page 47

Correlation versus hybridization gap in CaMn$$_{2}$$Bi$$_{2}$$

Abstract We study the interplay between electronic correlations and hybridization in the low-energy electronic structure of CaMn $$_2$$ 2 Bi $$_2$$ 2 , a candidate hybridization-gap semiconductor. By employing a DFT+ U approach we find both the antiferromagnetic Néel order and band gap in good agreement with the corresponding experimental values. Under hydrostatic pressure, we find a crossover from hybridization gap to charge-transfer insulting physics due to the delicate balance of hybridization and correlations. Increasing the pressure above $$P_c=4$$ P c = 4 GPa we find a simultaneous pressure-induced volume collapse, plane-to-chain, insulator to metal transition. Finally, we have also analyzed the topology in the antiferromagnetic CaMn $$_2$$ 2 Bi $$_2$$ 2 for all pressures studied.

36 MATERIALS SCIENCE↗

The quest for inorganic fullerenes

Experimental results of the search for inorganic fullerenes are presented. Mo{sub n}S{sub m}{sup −} and W{sub n}S{sub m}{sup −} clusters are generated with a pulsed arc cluster ion source equipped with an annealing stage. This is known to enhance fullerene formation in the case of carbon. Analogous to carbon, the mass spectra of the metal chalcogenide clusters produced in this way exhibit a bimodal structure. The species in the first maximum at low mass are known to be platelets. Here, the structure of the species in the second maximum is studied by anion photoelectron spectroscopy, scanning transmission electron microscopy, and scanning tunneling microcopy. All experimental results indicate a two-dimensional structure of these species and disagree with a three-dimensional fullerene-like geometry. A possible explanation for this preference of two-dimensional structures is the ability of a two-element material to saturate the dangling bonds at the edges of a platelet by excess atoms of one element. A platelet consisting of a single element only cannot do this. Accordingly, graphite and boron might be the only materials forming nano-spheres because they are the only single element materials assuming two-dimensional structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Beyond electrostatic modification: design and discovery of functional oxide phases via ionic-electronic doping

A new research field of functional materials and device physics is emerging that combines ionic transport with charge carrier modulation to realize emergent physical properties and discovery of metastable phases. The paradigm for enabling function extends far beyond carrier accumulation or depletion in band semiconductors or simply moving ions through an insulating electrolyte. Rather, by careful selection of electronically or structurally fragile materials, one can collapse or open band gaps via extreme ionic dopant concentration, or reconfigure their entire crystal structure to create new phases. Electron-electron and electron-lattice interactions can be coupled or controlled independently in such systems via electric fields without thermal constraints by use of ionic dopants. The unifying theme across these studies is to introduce ions and electrons via electric fields through interfaces with electrochemistry playing a dominant role. In this review, we briefly summarize this nascent field of iontronics and discuss principal results to date with examples from binary and complex oxides as well as selected 2D materials systems. Here, we conclude the review by highlighting gaps in fundamental scientific understanding and prospects for the use of such novel devices in future electronic, photonic and energy technologies.

36 MATERIALS SCIENCE↗

CHARGED POINT DEFECTS AND DEFECT COMPLEXES IN PHOSPHORENE AND STRUCTURAL PREDICTION OF TAU-11, A DENSITY FUNCTIONAL THEORY APPROACH

With the advent of powerful computers, first principle calculations have become a robust and reliable tool to complement experiments in the study of materials. First principle calculations such as density functional theory can be used to guide experiments to save time and effort when it comes to new and advanced materials discovery. Study of charge defects in materials and crystal structure prediction are such areas in which density functional theory calculations facilitate the prediction of defect formation energy, charge transition levels and elemental site occupations. Experimentally, studying charge defects requires inferring results from various techniques. Likewise, determining site occupancies for similar elements using experimental techniques is challenging and sometimes impossible. In this work, we study the charged intrinsic and extrinsic defects and defect complexes in phosphorene and determine the site occupancies of Al, Fe and Si in the τ11 phase using density functional theory. In the defect work, we calculate the defect formation energy, charge transition level, binding energies and Stokes shift for vacancy, dopant substitution and dopant-vacancy defect complexes in phosphorene. We found that vacancy defect in phosphorene becomes negatively charged in n-type doping and may passivate the dopants and reduce carrier concentration and mobility. For non-metal dopants in phosphorene, we predict that O, S and Si prefer to form dopant-vacancy complexes removing the vacancy defect states from the band gap. Mn dopant-vacancy defect complex exhibits possibility of switching between two magnetic spin states. Lastly, using density functional theory, we complement the results from neutron powder diffraction to determine the site occupancies of Al and Si in τ11 phase which was used to determine the alloying element to develop a high temperature and low density alloy.

36 MATERIALS SCIENCE↗

High permeability sub-nanometre sieve composite MoS 2 membranes

Two-dimensional membranes have gained enormous interest due to their potential to deliver precision filtration of species with performance that can challenge current desalination membrane platforms. Molybdenum disulfide (MoS 2 ) laminar membranes have recently demonstrated superior stability in aqueous environment to their extensively-studied analogs graphene-based membranes; however, challenges such as low ion rejection for high salinity water, low water flux, and low stability over time delay their potential adoption as a viable technology. Here, we report composite laminate multilayer MoS 2 membranes with stacked heterodimensional one- to two-layer-thick porous nanosheets and nanodisks. These membranes have a multimodal porous network structure with tunable surface charge, pore size, and interlayer spacing. In forward osmosis, our membranes reject more than 99% of salts at high salinities and, in reverse osmosis, small-molecule organic dyes and salts are efficiently filtered. Finally, our membranes stably operate for over a month, implying their potential for use in commercial water purification applications.

36 MATERIALS SCIENCE↗

Atomically Precise PdSe 2 Pentagonal Nanoribbons

We report atomically precise pentagonal PdSe 2 nanoribbons (PNRs) fabricated on a pristine PdSe 2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe 2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.

36 MATERIALS SCIENCE↗

Experimental realization of two-dimensional Dirac nodal line fermions in monolayer Cu 2 Si

Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn 4 , ZrSiS, TlTaSe 2 and PbTaSe 2 . However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu 2 Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu 2 Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. In conclusion, our results establish Cu 2 Si as a platform to study the novel physical properties in two-dimensional Dirac materials and provide opportunities to realize high-speed low-dissipation devices.

36 MATERIALS SCIENCE↗

Coupling between magnetic order and charge transport in a two-dimensional magnetic semiconductor

Semiconductors, featuring tunable electrical transport, and magnets, featuring tunable spin configurations, form the basis of many information technologies. A long-standing challenge has been to realize materials that integrate and connect these two distinct properties. Two-dimensional (2D) materials offer a platform to realize this concept, but known 2D magnetic semiconductors are electrically insulating in their magnetic phase. In this work, we demonstrate tunable electron transport within the magnetic phase of the 2D semiconductor CrSBr and reveal strong coupling between its magnetic order and charge transport. This provides an opportunity to characterize the layer-dependent magnetic order of CrSBr down to the monolayer via magnetotransport. Exploiting the sensitivity of magnetoresistance to magnetic order, we uncover a second regime characterized by coupling between charge carriers and magnetic defects. The magnetoresistance within this regime can be dynamically and reversibly tuned by varying the carrier concentration using an electrostatic gate, providing a mechanism for controlling charge transport in 2D magnets.

36 MATERIALS SCIENCE↗

Low-Loss Charge Transfer Plasmons in Graphene/α-RuCl 3 Heterostructures Below 40 K

Charge transfer at material interfaces governs a wide range of physical properties, from electronic band structures to emergent collective excitations. In two-dimensional (2D) material heterostructures, charge transfer phenomena play important roles in enabling novel quantum phases, proximity effects, and tunable plasmonic responses. One representative charge transfer interface is formed between α-RuCl 3 , a van der Waals material with high electron affinity, and graphene. Significant charge transfer across this interface induces the formation of charge-transfer plasmon polaritons (CPPs), hybrid excitations between light and charge oscillations. However, previous studies found that as the charge transfer process takes place, α-RuCl 3 becomes lossy, which limits the quality factor of CPPs. Here, we investigate CPPs down to 10 K using a home-built scattering-type scanning near-field optical microscope (s-SNOM) optimized for low-temperature measurements. Our study reveals a dramatic suppression of plasmon loss channels below 40 K, contributing to a significant enhancement in the plasmonic quality factor. This reduction in loss is likely attributed to the blue shift of the correlation-induced Mott gap in α-RuCl 3 with decreasing temperature, along with the reduction of phonon scattering at low temperature. In conclusion, our results highlight the potential of using s-SNOM and CPPs to study complex 2D interfaces and reveal correlated electron dynamics in the underlying material.

36 MATERIALS SCIENCE↗

Truncating 2D Framework Materials Down to a Single Pore: Synthetic Approaches and Opportunities

Here, in this Accounts article, we summarize our recent work on truncating conjugated two-dimensional framework materials down to a single pore, or a single macrocycle. Conjugated 2D architectures have emerged as one of the most synthetically adaptable motifs for coupling semiconductivity and porosity in metal–organic frameworks (MOFs) and covalent organic frameworks (COFs). However, despite their prevalence, 2D architectures have several limitations. In particular, the strong interlayer π–π stacking can limit both processability and the accessibility of internal active sites. We have found that simple macrocycles preserve key aspects of 2D framework structure and function, including porosity and out-of-plane electrical conductivity, while providing improved processability, surface tunability, and mass transport properties. In this article, we first describe our synthetic approach and general design considerations. Specifically, we show how ditopic analogues of the tritopic ligands commonly found in the synthesis of 2D MOFs and COFs can be used to achieve a diverse library of conjugated macrocycles that resemble fragments of semiconducting frameworks in both form and function. The length of the peripheral side chains, the size of the aromatic core, and the solubility of intermediates are all key variables in favoring selective macrocycle formation over undesired linear polymers and oligomers. Next, we highlight the unique advantages that macrocycles provide, including improved processability, atomically precise surface tunability, and greater active site accessibility. In particular, the identity of the peripheral side chains dramatically impacts both solubility and colloidal stability as well as crystal size and morphology. We further show how the solution processability and nanoscale dimensions of macrocycles can simplify electronic device fabrication and improve electrochemical performance. Finally, we end with a forward-looking discussion on how macrocycles offer a unique bridge between conjugated molecules and extended frameworks, enabling new application areas and fundamental science.

charge transport↗

Sulfurization Engineering of One–Step Low–Temperature MoS 2 and WS 2 Thin Films for Memristor Device Applications

2D materials have been of considerable interest as new materials for device applications. Non-volatile resistive switching applications of MoS 2 and WS 2 have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large-area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one-step sulfurization method to synthesize MoS 2 and WS 2 at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO 2 /Si substrates is achieved. Following this, MoS 2 and WS 2 memristors are fabricated that exhibit stable non-volatile switching and a satisfactory large on/off current ratio (10 3 –10 5 ) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. Furthermore, the demonstration of large-scale MoS 2 and WS 2 memristors with a one-step low-temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing.

36 MATERIALS SCIENCE↗

Vapor-Phase Intercalation of Cesium into Black Phosphorous

Cesium vapors were charged into black phosphorous (BP) flakes at varied times and at a temperature gradient of 150 °C. The X-ray diffraction (XRD) measurements of these samples suggest a reduction in the strength of van der Waal interactions between BP layers leading to the loss of coherence of out-of-plane peaks. At the same time, the three main Raman modes of BP (A g 1 , B 2 g , and A g 2 ) steadily redshifted as exposure times were increased, with modes B 2 g and A g 2 shifting faster than A g 1 . After initial rapid downshifts of active BP phonon modes, this intercalation strategy showed its limits following prolonged exposure times. Saturation of BP flakes by Cs vapors ensued and the kinetics was fitted with an exponential decay function. Furthermore, the thermoelectric power (TEP) of cesiated BP exhibited an inversion in sign from positive to negative around 400 K, lending credence to the transformation of as-prepared BP which is a p-type semiconductor to an n-type equivalent due to Cs atom intercalation driven shifting of the Fermi level toward the conduction band of BP and the donation of electrons from Cs. Furthermore, density functional theory (DFT) calculations were used to delve deeper into understanding Cs intercalation on the structural evolution of BP.

36 MATERIALS SCIENCE↗

Machine Learning an Ab-Initio Based Bond-Order Potential for Bismuthene

Bismuthene is a heavy 2D material whose strong spin–orbit coupling and recently observed single-element ferroelectricity have intensified interest in its structural, vibrational, and transport properties. Accurate modeling of these behaviors requires a short-range interatomic potential that can reproduce the underlying bonding physics at a fraction of the computational cost of first-principles methods. However, such a potential is currently unavailable. Here, in this work, we construct a Tersoff bond-order potential for β-bismuthene using a reinforcement-learning framework that integrates a continuous Monte Carlo Tree Search with a simplex-based local optimizer. The optimized parameter sets reproduce first-principles lattice constants, cohesive energy, the equation of state, elastic constants, and phonon dispersion. We validate the models by performing thermal-conductivity calculations and uniaxial fracture simulations our findings confirm the reliability of the resulting models across multiple thermomechanical regimes. Comparison of the three best solutions reveals how differences in pairwise interactions, angular terms, and bond-order behavior govern phonon features and mechanical responses. We demonstrate an interpretable and computationally efficient potential for bismuthene and demonstrate a general reinforcement-learning strategy for developing bond-order models in emerging 2D materials.

deformation↗

Defects in Highly Anisotropic Transition-Metal Dichalcogenide PdSe 2

The atomic and electronic structures of the pristine PdSe 2 as well as various intrinsic vacancy defects in PdSe 2 are studied comprehensively by combining scanning tunneling microscopy, spectroscopy and density functional theory calculations. Other than the topmost Se atoms, sublayer Pd atoms, the intrinsic Pd and Se vacancy-defects are identified. Both V Se and V Pd defects induce defect states near Fermi level. As a result, the vacancy defects can be negatively charged by tip gating effect. At negative sample bias, the screened Coulomb interaction between STM tip and the charged vacancies creates disk-like protrusion around V Pd and crater-like features around V Se . The magnification effect of the long-range charge localization at the charged defect site makes sublayer defects as deep as 1nm visible even in STM images. In conclusion, this result proves that by gating the probe, scanning probe microscopy can be used as an easy tool for characterizing sublayer defects in a nondestructive way.

36 MATERIALS SCIENCE↗

Electrochemical Control of Copper Intercalation into Nanoscale Bi 2 Se 3

Intercalation of exotic atoms or molecules into the layered materials remains an extensively investigated subject in current physics and chemistry. However, traditionally melt-growth and chemical interaction strategies are either limited by insufficiency of intercalant concentrations or destitute of accurate controllability. Here, we have developed a general electrochemical intercalation method to efficaciously regulate the concentration of zerovalent copper atoms into layered Bi 2 Se 3 , followed by comprehensive experimental characterization and analyses. Up to 57% copper atoms (Cu 6.7 Bi 2 Se 3 ) can be intercalated with no disruption to the host lattice. Meanwhile the unconventional resistance dip accompanied by a hysteresis loop below 40 K, as well as the emergence of new Raman peak in Cu x Bi 2 Se 3 , is a distinct manifestation of the interplay between intercalated Cu atoms with Bi 2 Se 3 host. Furthermore, our work demonstrates a new methodology to study fundamentally new and unexpected physical behaviors in intercalated metastable materials.

36 MATERIALS SCIENCE↗

Arrays of Functionalized Graphene Chemiresistors for Selective Sensing of Volatile Organic Compounds

Real-time detection of volatile organic compounds (VOCs) is being spotlighted for its importance in environmental monitoring and disease detection from the breath. However, the selective detection of VOCs in a small form factor gas sensor remains a challenge. Here, we present the VOC sensing performance of phthalocyanine (Pc)-functionalized graphene chemiresistors supported by the theoretical prediction of Pc's VOC interactions. Pc functionalization, with and without metalation, was studied parametrically with varying deposition parameters to explore impacts on the gas sensing response toward VOCs as a function of substrate coverage. Sensing data were collected to establish fingerprint signatures for a variety of VOCs. In conclusion, improvement in selectivity is shown by successfully differentiating the VOCs from each other when combined into a gas sensor array tested with acetone, ethanol, formaldehyde, and toluene.

2D materials↗

Plasmonic Terahertz Devices and Sensors Based on Carbon Electronics

Tunable terahertz (THz) photonic devices are imperative in a wide range of applications ranging from THz signal modulation to molecular sensing. One of the currently prevailing methods is based on arrays of metallic or dielectric resonators integrated with functional materials in response to an external stimulus, in which for the purpose of sensing the external stimuli may introduce inadvertent undesirable effects into the target samples to be measured. Here we developed an alternative approach by postprocessing nanothickness macro-assembled graphene (nMAG) films with widely tunable THz conductivity, enabling versatile solid-state THz devices and sensors, showing multifunctional nMAG-based applications. The THz conductivities of free-standing nMAGs showed a broad range from 1.2 x 10 3 S/m in reduced graphene oxide before annealing to 4.0 x 10 6 S/m in a nMAG film annealed at 2800 °C. We fabricated nMAG/dielectric/metal and nMAG/dielectric/nMAG THz Salisbury absorbers with broad reflectance ranging from 0% to 80%. The highly conductive nMAG films enabled THz metasurfaces for sensing applications. Taking advantage of the resonant field enhancement arising from the plasmonic metasurface structures and the strong interactions between analyte molecules and nMAG films, we have successfully detected diphenylamine with a limit of detection of 4.2 pg. Those wafer-scale nMAG films present promising potential in high-performance THz electronics, photonics, and sensors.

36 MATERIALS SCIENCE↗

Control of MXenes’ electronic properties through termination and intercalation

MXenes are an emerging family of highly-conductive 2D materials which have demonstrated state-of-the-art performance in electromagnetic interference shielding, chemical sensing, and energy storage. To further improve performance, there is a need to increase MXenes’ electronic conductivity. Tailoring the MXene surface chemistry could achieve this goal, as density functional theory predicts that surface terminations strongly influence MXenes' Fermi level density of states and thereby MXenes’ electronic conductivity. Here, we directly correlate MXene surface de-functionalization with increased electronic conductivity through in situ vacuum annealing, electrical biasing, and spectroscopic analysis within the transmission electron microscope. Furthermore, we show that intercalation can induce transitions between metallic and semiconductor-like transport (transitions from a positive to negative temperature-dependence of resistance) through inter-flake effects. These findings lay the groundwork for intercalation- and termination-engineered MXenes, which promise improved electronic conductivity and could lead to the realization of semiconducting, magnetic, and topologically insulating MXenes.

36 MATERIALS SCIENCE↗