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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Indium phosphide solar cells - Status and prospects for use in space

The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

Weinberg, I.↗
NASA NTRS1986

Wide field and diffraction limited array camera for SIRTF

The Infrared Array Camera for the space Infrared Telescope Facility (SIRTF/IRAC) is capable of two-dimensional photometry in either a wide field or diffraction-limited mode over the wavelength interval from 2 to 30 microns. Three different two-dimensional direct readout (DRO) array detectors will be used: Band 1-InSb or Si:In (2-5 microns) 128 x 128 pixels, Band 2-Si:Ga (5-18 microns) 64 x 64 pixels, and Band 3-Si:Sb (18-30 microns) 64 x 64 pixels. The hybrid DRO readout architecture has the advantages of low read noise, random pixel access with individual readout rates, and nondestructive readout. The scientific goals of IRAC are discussed, which are the basis for several important requirements and capabilities of the array camera: (1) diffraction-limited resolution from 2-30 microns, (2) use of the maximum unvignetted field of view of SIRTF, (3) simultaneous observations within the three infrared spectral bands, and (4) the capability for broad and narrow bandwidth spectral resolution. A strategy has been developed to minimize the total electronic and environmental noise sources to satisfy the scientific requirements.

Fazio, G. G.↗
NASA NTRS1985

Potential for use of InP solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗
NASA NTRS1986

Ultraviolet observations of Be stars. II - Superionization in Be stars of different spectral types

The results of an investigation of the dependence of the strength/presence of lines from superionized species (N V, C IV, Si IV) on spectral type and v sin i in the ultraviolet spectra of Be stars are presented. No evidence is found for N V in stars later than B2; this apparent absence may, however, simply reflect problems with the IUE reduction procedure. The C IV and Si IV lines pervade the ultraviolet spectra of all B subtypes, with a trend toward increasing strength with increasing effective temperature. A similar trend in the 'edge velocity' of the feature with spectral type is found. The data also suggest a possible trend toward the presence of stronger C IV and a higher edge velocity in stars with larger values of v sin i. The observed temporal variability in N V, C IV, and Si IV in some Be stars is discussed.

Marlborough, J. M.↗
NASA NTRS1986

Wide field and diffraction limited array camera for SIRTF

The Infrared Array Camera for the Space Infrared Telescope Facility (SIRTF/IRAC) is capable of two-dimensional photometry in either a wide field or diffraction-limited mode over the wavelength interval from 2 to 30 microns. Three different two-dimensional direct readout (DRO) array detectors are being considered: Band 1-InSb or Si:In (2-5 microns) 128 x 128 pixels, Band 2-Si:Ga (5-18 microns) 64 x 64 pixels, and Band 3-Si:Sb (18-30 microns) 64 x 64 pixels. The hybrid DRO readout architecture has the advantages of low read noise, random pixel access with individual readout rates, and nondestructive readout. The scientific goals of IRAC are discussed, which are the basis for several important requirements and capabilities of the array camera: (1) diffraction-limited resolution from 2-30 microns, (2) use of the maximum unvignetted field of view of SIRTF, (3) simultaneous observations within the three infrared spectral bands, and (4) the capability for broad and narrow bandwidth spectral resolution. A strategy has been developed to minimize the total electronic and environmental noise sources to satisfy the scientific requirements.

Fazio, G. G.↗
NASA NTRS1987

Highly ionized interstellar gas located in the Galactic disk and halo

High-resolution IUE absorption line spectra have been obtained for 40 distant stars in order to study the distribution of interstellar H I, Si IV, C IV, and N V in the Galactic disk and lower halo. Respective midplane densities of 2 x 10 to the -9th, 7 x 10 to the -9th, and 3 x 10 to the -9th are found for Si IV, C IV, and Ni V. Both column density and velocity data indicate that the highly ionized gas (HIG) is considerably more extended in directions away from the Galactic plane than is H I or Si II. The absorption-line velocities for the halo HIG are consistent with the notion that halo gas in the inner Galaxy rotates more slowly than gas in the underlying disk. The derived column densities suggest an exponential scale height for the HIG of about 3 kpc; however, a simple exponential distribution is a poor representation of the distribution of the gas. It is concluded that a full explanation of the origin of the halo HIG will probably require a blending of ideas from the Galactic fountain and the photoionized halo models.

Savage, Blair D.↗
NASA NTRS1987

The silicate component of Martian dust

Absorption features in telescopic reflectance spectra of Mars obtained during 1978, and absorption features in Mariner 7 and Mariner 9 spectra, are analyzed which are assigned to structural hydroxyl within a strongly hydrogen-bonded acidic material suggested to be a silicate. Deduced fundamentals indicate that the Si-O(b)-Si bond angle may be approximately linear, and that the estimated Si-O(b) bridge length may be about 1.61 A. Viking compositional data indicate that Mg(2+), rather than Ca(2+) may be the dominant cation in the Martian material. The results suggest that the silicate component of the dust may be an incipient hydrolysis product of olivine-rich ultramafic or mafic material, involving a process that resulted in minimum loss of mobile cations and that maintained the high O/Si ratio of the starting material.

Huguenin, R. L.↗
NASA NTRS1988

Space infrared telescope facility wide field and diffraction limited array camera (IRAC)

The wide-field and diffraction limited array camera (IRAC) is capable of two-dimensional photometry in either a wide-field or diffraction-limited mode over the wavelength range from 2 to 30 microns with a possible extension to 120 microns. A low-doped indium antimonide detector was developed for 1.8 to 5.0 microns, detectors were tested and optimized for the entire 1.8 to 30 micron range, beamsplitters were developed and tested for the 1.8 to 30 micron range, and tradeoff studies of the camera's optical system performed. Data are presented on the performance of InSb, Si:In, Si:Ga, and Si:Sb array detectors bumpbonded to a multiplexed CMOS readout chip of the source-follower type at SIRTF operating backgrounds (equal to or less than 1 x 10 to the 8th ph/sq cm/sec) and temperature (4 to 12 K). Some results at higher temperatures are also presented for comparison to SIRTF temperature results. Data are also presented on the performance of IRAC beamsplitters at room temperature at both 0 and 45 deg angle of incidence and on the performance of the all-reflecting optical system baselined for the camera.

Fazio, Giovanni G.↗
NASA NTRS1987

IUE observations of the broad continuum feature at 1400 A in the silicon and related stars

The upper main sequence chemically peculiar stars have previously been studied spectrophotometrically using low-resolution TD-1 spectra. These show that the broad continuum feature at 1400 A is a useful indicator of Si anomaly. In this paper the observations are extended to IUE low-resolution spectra and it is shown that this feature is indeed well correlated with Si and also with optical chemical peculiarity indices. Its utility in selecting silicon stars is further demonstrated. This feature is likely due to autoionization of Si II and is the best available discriminator of the overabundance of a key element in the Ap stars.

Shore, S. N.↗
NASA NTRS1987

Characteristics of GaAs with inverted thermal conversion

GaAs crystals exhibiting inverted thermal conversion (ITC) of resistivity were investigated in conjunction with standard semiinsulating (SI) GaAs regarding characteristics important in device processing. It was established that dislocation density and Si implant activation are unaffected by transformation to the ITC state. However, in ITC GaAs the controlled increase of the EL2 (native midgap donor) concentration during annealing makes it possible to attain resistivities one order of magnitude greater (e.g., about 10 to the 9th ohm cm of 300 K) than those attained in standard SI GaAs (e.g., 10 to the 7th-10 to the 8th ohm cm).

Kang, C. H.↗
NASA NTRS1987

Computer simulation of ledge formation and ledge interaction for the silicon (111) free surface

Both strip and triangular clusters, composed of 2 -1 -1 line ledges, have been simulated on the Si (111) surface. The long-range ledge-ledge interaction and the surface stress tensor distribution have been evaluated for these two pill-box geometries using a semiempirical potential-energy function that incorporates both two-body and three-body contributions. The consequences of the ledge-ledge interaction on two-dimensional nucleation for Si (111) has been evaluated as a function of Si adatom supersaturation and shown to differ significantly from conventional theory, where such interaction is neglected.

Balamane, H.↗
NASA NTRS1987

Rapid ionization of the environment of SN 1987A

It has been suggested by some authors that IUE observations of the supernova SN 1987A show the presence of a strong component of the interstellar C IV 1550 and Si IV 1393 absorption lines at a velocity that approximately corresponds to the velocity of the LMC. It is possible that this component might come from originally neutral (or at least not very highly ionized) gas which has been photoionized by the initially very strong ionizing radiation field of the supernova. Theoretical considerations of this scenario lead to the study of fast (with velocities of about c) ionization fronts. It is shown that for reasonable model parameters it is possible to obtain considerably large C IV column densities, in agreement with the IUE observations. On the other hand, the models do not so easily predict the large Si IV column densities that are also obtained from the IUE observations. It is found that only models in which the interstellar medium surrounding SN 1987A is initially composed of already ionized hydrogen and helium predict substantial Si IV column densities. This result provides an interesting prediction of the ionization state of the environment of the presupernova star.

Raga, A. C.↗
NASA NTRS1988

Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room-temperature codeposition technique

Co and Si have been codeposited on Si (111) substrates near room temperature in a stoichiometric 1:2 ratio in a molecular beam epitaxy system. Annealing of these deposits yields high-quality single-crystal CoSi2 layers. Transmission electron microscopy has been used to examine as-deposited layers and layers annealed at 300, 500, and 600 C. Single-crystal epitaxial grains of CoSi2 embedded in a matrix of amorphous Co/Si are observed in as-deposited samples, while the layer is predominantly single-crystal, inhomogeneously strained CoSi2 at 300 C. At 600 C, a homogeneously strained single-crystal layer with a high density of pinholes is observed. In contrast to other solid phase epitaxy techniques used to grow CoSi2 on Si (111), no intermediate silicide phases are observed prior to the formation of CoSi2.

D'Anterroches, Cecile↗
NASA NTRS1988

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.

Mehdi, I.↗
NASA NTRS1988

Intersubband absorption of silicon-based quantum wells for infrared imaging

The 10-micron intersubband absorption in quantum wells made of the silicon-based system, Si/Si(1-x)Ge(x), has been calculated. The necessary details of the effective-mass anisotropy are included in the present analysis. It is found that it is readily possible to achieve an absorption constant of order of 10,000/cm in Si quantum wells with current doping technology. For 110-line and 111-line growth directions, a further advantage of Si quantum wells is pointed out, namely, an allowed absorption at normal incidence due to the anisotropic effective mass in Si.

Yang, Chan-Ion↗
NASA NTRS1988

Scanning tunneling microscopy characterization of the geometric and electronic structure of hydrogen-terminated silicon surfaces

Scanning tunneling microscopy (STM) methods are used to characterize hydrogen-terminated Si surfaces prepared by a novel method. The surface preparation method is used to expose the Si-SiO2 interface. STM images directly reveal the topographic structure of the Si-SiO2 interface. The dependence of interface topography on oxide preparation conditions observed by STM is compared to the results of conventional surface characterization methods. Also, the electronic structure of the hydrogen-terminated surface is studied by STM spectroscopy. The near-ideal electronic structure of this surface enables direct tunnel spectroscopy measurements of Schottky barrier phenomena. In addition, this method enables probing of semiconductor subsurface properties by STM.

Kaiser, W. J.↗
NASA NTRS1988

Companions to peculiar red giants: HR 363 and HR 1105

Recent IUE observations of two Tc-deficient S-type peculiar red giants that are also spectroscopic binaries, HR 363 and HR 1105 are reported. A 675 min SWP exposure of HR 363 shows emission lines of O I 1304 and Si II 1812 and a trace of continuum. Compared to the M giants, the far UV flux may be relatively larger, indicating a possible contribution from a white dwarf companion, but no high temperature emission lines are seen to indicate that this is an interacting system where mass-transfer recently occurred. However, HR 1105 appears to have a highly variable UV companion. In 1982, no UV flux was discerned for this system, but by 1986 C IV was strong, increasing by a factor of 3 in 1987 with prominent lines of Si III, C III, O III, Si IV, and N V. Using orbital parameters, these observations are consistent with high activity occuring when the side of the S-star primary illuminated by the companion faces the Earth, but since the IUE data were taken over 3 orbits, a secular change in the UV component cannot be excluded.

Ake, Thomas B., III↗
NASA NTRS1989

Fabrication of n(+)/p InP solar cells on silicon substrates

InP films were grown by MOCVD on Si GaAs substrates (as well as on InP substrates, included as controls), and were used to fabricate solar cells, using the Spitzer et al. (1987) technique. Contact to the substrate was made with Al-Ti-Pd-Ag to the Si wafers and with Au-Zn alloy to the GaAs wafers, while contract to the front was made with Cr-Au-Ag. Air mass zero efficiencies were found to be 7.1 percent for Si-substrate cells and 9.4 percent for GaAs-substrate cells.

Keavney, C. J.↗