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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Effect of substrate orientation and anisotropic strength on corrosion pits

The complexities of pitting corrosion and its associated pit morphologies are critical for predicting and preventing pit-related failure in materials. With the advances in computational tools, modeling of pitting corrosion has lately gained momentum. We recently developed a phase field model for 3-D pit morphology, and in the current work, the model is utilized to gain insight into the role of substrate orientation and anisotropic strength on crystallographic pits. The influence of these parameters on pit morphology and corrosion metrics such as pit volume, current, pit area, current density, and pit depth are studied. The crystallographic pit morphology changes with substrate orientation but not significantly with anisotropic strength. Finally, the anisotropic strength strongly influences the corrosion metrics whereas most corrosion metrics remain unaffected by substrate orientation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Copper substrate as a catalyst for the oxidation of chemical vapor deposition-grown graphene

We report the catalytic effect of copper substrate on graphene–oxygen reaction at high temperature. Previous studies showed that graphene grown on copper are mostly defect-free with strong oxidation resistance. We found that a freshly prepared copper-supported graphene sample can be completely oxidized in trace amount of oxygen (<3 ppm) at 600 °C within 2 h. Both X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) suggest that upon ambient air exposure, oxygen molecules diffuse into the space between graphene and copper, resulting in the formation of copper oxide which acts as catalytic sites for the graphene-oxygen reaction. This result has important implications for the characterization, processing, and storage of copper-supported graphene samples. - Graphical abstract: The copper substrate enhances the thermel oxidation of single-layer graphene. - Highlights: • A copper-supported graphene can be oxidized in Ar (O{sub 2}<3 ppm, 600 °C, 2 h). • O{sub 2} intercalates between graphene and copper upon exposure to air. • The copper foil should not be considered as an inert substrate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

In-situ preparation of Fe{sub 2}O{sub 3} hierarchical arrays on stainless steel substrate for high efficient catalysis

Hierarchical array catalysts with micro/nano structures on substrates not only possess high reactivity from large surface area and suitable interface, but intensify mass transfer through shortening the diffusion paths of both reactants and products for high catalytic efficiency. Herein, we first demonstrate fabrication of Fe{sub 2}O{sub 3} hierarchical arrays grown on stainless-steel substrates via in-situ hydrothermal chemical oxidation followed by heat treatment in N{sub 2} atmosphere. As a Fenton-like catalyst, Fe{sub 2}O{sub 3} hierarchical arrays exhibit excellent catalytic activity and life cycle performance for methylene blue (MB) dye degradation in aqueous solution in the presence of H{sub 2}O{sub 2}. The Fe{sub 2}O{sub 3} catalyst with unique hierarchical structures and efficient transport channels, effectively activates H{sub 2}O{sub 2} to generate large quantity of • OH radicals and highly promotes reaction kinetics between MB and • OH radicals. Immobilization of hierarchical array catalysts on stainless-steel can prevent particles agglomeration, facilitate the recovery and reuse of the catalysts, which is expected promising applications in wastewater remediation. - Graphical abstract: The in-situ synthesis of Fe{sub 2}O{sub 3} hierarchical arrays on stainless-steel substrates was reported for the first time, which exhibit excellent catalytic activity performance for methylene blue (MB) dye degradation in aqueous solution in the presence of H{sub 2}O{sub 2}. - Highlights: • Fe{sub 2}O{sub 3} hierarchical arrays was prepared by in-situ hydrothermal chemical oxidation. • F{sup −} ions play an important role in the formation of the Fe{sub 2}O{sub 3} hierarchical arrays. • Fe{sub 2}O{sub 3} hierarchical arrays show high catalytic activity to methylene blue degradation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Structural, optical and gas sensing properties of vertically well-aligned ZnO nanowires grown on graphene/Si substrate by thermal evaporation method

Highlights: • Vertically well-aligned ZnO NW arrays with high aspect ratio and extremely large-surface-volume ratio were synthesized on graphene/Si substrate without the aid of metal catalyst by a simple thermal evaporation. • The gas sensor based on the vertical ZnO NW arrays-graphene structure exhibited high sensitivity and rapid response/recovery characteristics to NO{sub 2} gas at 200oC, and could be used to detect NO{sub 2} gas at very low levels (2, 6, 10 ppm). • The excellent sensing performance is mainly because of the large specific surface area and the presence of oxygen-vacancies at the surface of ZnO NWs, together with the creation of p-n heterojunctions between n-type ZnO NW and p-type graphene. • The common defects and optical properties of the ZnO NW arrays-graphene structure were studied in detail. • The possible growth mechanism of vertically well-aligned ZnO NWs on graphene and the gas-sensing mechanism of sensors were proposed. - Abstract: We report catalyst-free vertical growth of high-density ZnO nanowire (NW) arrays on Si substrate with a graphene buffer layer by thermal evaporation method. Structural, surface morphology, chemical composition and optical properties of ZnO NWs were studied by Field emission scanning electron microscopy (FE-SEM), High-resolution transmission electron microscopy (HR-TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL) and Raman spectroscopy. The results indicate that the grown ZnO NWs are single-crystalline and exhibit the hexagonal wurtzite crystal structure with a preferred orientation along the [0001] direction; all of the ZnO NWs vertically grow on the graphene/Si substrate. The majority of the as-grown NWs have diameters in the range of 250–300 nm and length up to several tens of micrometers, whereas a small portion of NWs have a diameter of approximately of 9–12 nm. Room temperature PL spectrum of the ZnO NWs exhibits a sharp and strong ultraviolet emission at 380 nm and a weak visible emission at around 516 nm. The role of graphene buffer layer in the vertical-aligned ZnO NW arrays growth and its improved optical properties is demonstrated. Importantly, the gas sensor based on these ZnO NWs exhibits high sensitivity and rapid response/recovery characteristics to NO{sub 2} gas at 200 °C, and can detect NO{sub 2} concentration as low as 2, 6 and 10 ppm. The excellent sensing performance is mainly due to the combination of the large specific surface area and the presence of oxygen-vacancies at the surface of ZnO NWs, together with the creation of p-n heterojunctions between n-type ZnO NW and p-type graphene. Such a ZnO NW/graphene structure is very promising for various applications, such as photonic, optoelectronic and sensor devices. In addition, the possible growth mechanism and the NO{sub 2} sensing gas mechanism of the ZnO NWs-graphene structure have been discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2012

The characterisation of lead-free thick-film resistors on different low temperature Co-fired ceramics substrates

Graphical abstract: Display Omitted Highlights: ► Lead free thick film resistors based on ruthenium oxide were developed. ► The compatibility of resistors with different LTCC substrates was evaluated. ► The interactions between resistors and glassy LTCC substrates were not detected. ► Electrical characteristics were comparable with commercial thick film resistors. -- Abstract: Lead-free thick-film resistors were synthesised and investigated. The thick-film resistor materials with nominal sheet resistivities from 50 ohm/sq. to 50 kohm/sq. were prepared using combinations of two lead-free glasses with reflow temperatures at 940 °C and 1240 °C, respectively, and two RuO{sub 2} powders (fine-grained and coarse-grained RuO{sub 2}). The thick-film resistors were printed and fired on alumina and on low temperature co-fired ceramics substrates and fired at 850 °C and 950 °C. The fired resistors were investigated by X-ray powder diffraction, by scanning electron microscopy and by energy dispersive X-ray analysis. The sheet resistivities, temperature coefficients of resistivity, gauge factors and noise indices were measured.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Self-catalysed InAs{sub 1-x}Sb{sub x} nanowires grown directly on bare Si substrates

Highlights: • Self-catalysed InAs{sub 1-x}Sb{sub x} nanowires grown directly on bare Si substrates. • InAs{sub 1-x}Sb{sub x} nanowires directly grown on bare Si substrates without employing the commonly used nucleation nanowire stems which could be problematic in device applications. • Pre-deposited Indium droplets were employed to facilitate InAs{sub 1-x}Sb{sub x} nanowire nucleation and growth. • Unravels a promising route for the direct integration of InAs{sub 1-x}Sb{sub x} nanowires with the well-established Silicon platform. - Abstract: We report the self-catalysed growth of InAs{sub 1-x}Sb{sub x} nanowires directly on bare Si substrates. Vertically aligned and non-tapered InAs{sub 1-x}Sb{sub x} nanowires were realized via indium-assisted nucleation without using nanowire stems. The compositions of the InAs{sub 1-x}Sb{sub x} nanowires were determined by high resolution X-ray diffraction (HRXRD). It is observed that the geometry of the nanowires is modified by the Sb flux resulting in an almost doubling of the lateral dimension and a corresponding suppression in the axial growth of the InAs{sub 1-x}Sb{sub x} nanowires. This observation unravels a method to modify the geometry of InAs nanowire and open up a promising route for the direct integration of InAs{sub 1-x}Sb{sub x} nanowires with the well-established Si platform.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Computational study of the adsorption of bimetallic clusters on alumina substrate

We performed computational investigation of the adsorption of bimetallic Pd 3 M 2 (where M changes from Ag, Au, Co, Cu, Mn, Ni, Pt, and Ru) cluster on the hydroxylated alumina surface. Previously, it was shown that small silver cluster can control the rate of discharge at the cathode of lithium-oxygen battery. The gap near the fermi energy was shown to control the oxygen reduction, an important reaction for LiO 2 formation. Controlling the gap would ultimately control the rate of LiO 2 formation. One can vary the size of the cluster to vary the gap, however, this "knob" provides limited variance in the gap. Alloying, in combination with size variation offer a much wider control of the gap, hence the LiO 2 formation. Using Density Functional Theory (DFT), we determined the most stable geometry of the bimetallic clusters Pd 3 M 2 and calculated the binding energies of these clusters on the alumina substrate which ranges from 0.2 eV to 0.25 eV depending upon the composition of the alloy-cluster, its orientation and the adsorption site. We also find that Pd atoms bind strongly with the substrate oxygen atoms with an average short bond-length of about 2.2 angstrom. We explored how the gap at the Fermi level of the system varies as a function of elemental composition and the calculated gap ranges from 0 meV to 90 meV. Charges distribution using Bader analysis was also performed to probe how charges are transferred between the cluster and the substrate. These preliminary results will open the door for more systematic studies of alloy clusters of different size and stoichiometry for Li-O 2 battery cathode design.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Rapid Screening of Single-Atom Catalyst Synthesis Conditions Using ToF-SIMS and Facet-Dependent Single-Crystal Substrates

Single-atom catalysts (SACs) offer superior catalytic performance compared to traditional nanoparticle catalysts but are challenging to develop because of the need for extensive optimization and specialized characterization techniques. Here, this study presents a rapid and versatile method for detecting synthesis conditions and elucidating deposition mechanisms of SACs on various substrates. By depositing active elements (Au, Cu, Ni and Rh) on facet-specific single-crystalline substrates (CeO 2 , TiO 2 , MgO and Al 2 O 3 ) and employing time-of-flight secondary ion mass spectroscopy (ToF-SIMS), we assessed facet-dependent deposition behaviors and identified optimal conditions for solution-based SAC synthesis. On CeO 2 and TiO 2 , we confirmed facet-dependent deposition, primarily influenced by oxygen vacancy density and photocatalytic activity, respectively. MgO exhibited the formation of metal oxide/hydroxide clusters for all active elements, and the degree of clustering for Cu and Ni was correlated with the facet hydrolysis susceptibility. Notably, Au and Rh deposition on MgO was facet-independent, attributed to the formation of hydroxide species in solution. Al 2 O 3 , due to its chemical stability and lack of surface defects, did not show active element deposition. This study not only provides a time and cost-efficient method for prescreening SAC synthesis conditions, but it also provides valuable insights into the various deposition mechanisms governing SAC formation on different substrates, paving the way for the rational design of tailored SACs for various catalytic applications.

ToF-SIMS↗
DOE OSTI2021

Polymer Coatings on Virus-like Particle Nanoreactors at Low Ionic Strength—Charge Reversal and Substrate Access

Virus-like particles (VLPs) are a class of biomaterials which serve as platforms for achieving the desired functionality through interior and exterior modifications. Through ionic strength-mediated electrostatic interactions, VLPs have been assembled into hierarchically ordered materials. This work builds on predictive models to prepare polymer-coated VLP dusters at very low ionic strength. Zeta potential measurements showed that the clusters carried a strongly positive charge, a complete charge reversal from the VLP building block. SAXS analysis confirmed polymer adsorption onto the VLP exterior. Furthermore, we then studied the activity of an encapsulated enzyme toward small molecular and macromolecular substrates to determine the effect of each component of the hierarchically assembled material. We found that while encapsulation and polymer coating did not have a large effect on access to the enzyme by its native, small molecular substrate, substrate modification with a macromolecule caused the polymer coating and encapsulation to affect the access to the enzyme.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2025

Tuning Molecular Interactions between Peptoids and Substrates to Achieve Surface-Agnostic Coating

Achieving programmable and robust coatings that maintain functionality while adhering to various surface types with molecular-level tunability and programmable features remains challenging. In this study, we develop adaptable and stable surface-agnostic coatings (SACs) based on crystalline peptoid membranes by tuning interpeptoid and peptoid-substrate interactions. We utilize two complementary methods: (1) surfaceinduced assembly, where peptoid membranes form directly on substrates, and (2) depositing preformed peptoid crystalline membranes via an aqueous layer-by-layer (LbL) assembly technique. These strategies are applied to substrates with diverse surface chemistries and topographies, including mica, highly ordered pyrolytic graphite (HOPG), MoS 2 , sapphire, and porous membranes like porous alumina and polysulfide. Atomic force microscopy confirms the formation of peptoid coatings and reveals differences in assembly behavior across surfaces. Moisture vapor transport measurements serve as a proof-of-concept test for membrane continuity and tunable permeance. Together, these findings demonstrate the adaptability and programmability of peptoid-based SACs, enabling rational coating design on surfaces with diverse chemical and topographical features. Furthermore, this work opens pathways for using peptoid membranes as programmable surface modifiers in functional interfaces, protective coatings, and membrane platforms.

biomimetic polymers↗
DOE OSTI2013

Structural basis of substrate discrimination and integrin binding by autotaxin

Autotaxin (ATX, also known as ectonucleotide pyrophosphatase/phosphodiesterase-2, ENPP2) is a secreted lysophospholipase D that generates the lipid mediator lysophosphatidic acid (LPA), a mitogen and chemoattractant for many cell types. ATX-LPA signaling is involved in various pathologies including tumor progression and inflammation. However, the molecular basis of substrate recognition and catalysis by ATX and the mechanism by which it interacts with target cells are unclear. Here, we present the crystal structure of ATX, alone and in complex with a small-molecule inhibitor. We have identified a hydrophobic lipid-binding pocket and mapped key residues for catalysis and selection between nucleotide and phospholipid substrates. We have shown that ATX interacts with cell-surface integrins through its N-terminal somatomedin B-like domains, using an atypical mechanism. Our results define determinants of substrate discrimination by the ENPP family, suggest how ATX promotes localized LPA signaling and suggest new approaches for targeting ATX with small-molecule therapeutic agents.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2012

Optimization of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} multilayers as transparent composite electrode on flexible substrate with high figure of merit

Different multilayer structures of Nb{sub 2}O{sub 5}/Ag/Nb{sub 2}O{sub 5} have been deposited onto flexible substrates by sputtering at room temperature to develop an indium free transparent composite electrode. The effect of Ag thickness on the electrical and optical properties of the multilayer stack has been studied in accordance with the Ag morphology. The critical thickness of Ag to form a continuous conducting layer is found to be 9.5 nm. A new conduction mechanism has been proposed to describe the conduction before and after the critical thickness. The effective Hall resistivity of the optimized films is as low as 6.44 Multiplication-Sign 10{sup -5} Ohm-Sign -cm with a carrier concentration and mobility of 7.4 Multiplication-Sign 10{sup 21} cm{sup -3} and 13.1 cm{sup 2} /V-s, respectively, at the critical Ag layer thickness. The multilayer stack has been optimized to obtain a sheet resistance of 7.2 Ohm-Sign /sq and an average optical transmittance of 86% at 550 nm without any substrate heating or post-annealing process. The Haacke figure of merit (FOM) has been calculated for the films, and the multilayer with a 9.5 nm thick Ag layer has the highest FOM at 31.5 Multiplication-Sign 10-3 {Omega}{sup -1}, which is one of the highest FOM values reported for TCE deposited at room temperature on a flexible substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Measuring the energy flux at the substrate position during magnetron sputter deposition processes

In this work, the energetic conditions at the substrate were investigated in dc magnetron sputtering (DCMS), pulsed dc magnetron sputtering (pDCMS), and high power impulse magnetron sputtering (HiPIMS) discharges by means of an energy flux diagnostic based on a thermopile sensor, the probe being set at the substrate position. Measurements were performed in front of a titanium target for a highly unbalanced magnetic field configuration. The average power was always kept to 400 W and the probe was at the floating potential. Variation of the energy flux against the pulse peak power in HiPIMS was first investigated. It was demonstrated that the energy per deposited titanium atom is the highest for short pulses (5 {mu}s) high pulse peak power (39 kW), as in this case, the ion production is efficient and the deposition rate is reduced by self-sputtering. As the argon pressure is increased, the energy deposition is reduced as the probability of scattering in the gas phase is increased. In the case of the HiPIMS discharge run at moderate peak power density (10 kW), the energy per deposited atom was found to be lower than the one measured for DCMS and pDCMS discharges. In these conditions, the HiPIMS discharge could be characterized as soft and close to a pulsed DCMS discharge run at very low duty cycle. For the sake of comparison, measurements were also carried out in DCMS mode with a balanced magnetron cathode, in the same working conditions of pressure and power. The energy flux at the substrate is significantly increased as the discharge is generated in an unbalanced field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Precise measurement of the transverse piezoelectric coefficient for thin films on anisotropic substrate

In this study, we propose a reliable measurement method for the effective transverse piezoelectric coefficient for thin films especially on anisotropic substrate. This coefficient for piezoelectric Pb(Zr, Ti)O{sub 3} (PZT) thin films was calculated by measuring the electric field-induced tip displacement of unimorph cantilevers composed of PZT thin films and Si substrates. We evaluated the reliability of the proposed measurement method by comparing it with numerical analysis and confirmed that the relative error of the piezoelectric coefficient (e{sub 31,f}) was less than 1%. We prepared 16 different unimorph cantilevers composed of identical PZT films on different Si beam geometries that had various substrate thicknesses and cantilever widths. Although the effective transverse piezoelectric coefficient e{sub 31,f} of PZT thin films ranged from -6.5 to -14 C/m{sup 2} as a function of the applied voltage, the difference among the 16 samples with an applied voltage of 25 V was within 10%. These results demonstrate that the proposed measurement method has sufficient reliability and can be used to evaluate the effective transverse piezoelectric coefficient e{sub 31,f} of thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Investigating the molecule-substrate interaction of prototypic tetrapyrrole compounds: Adsorption and self-metalation of porphine on Cu(111)

We report on the adsorption and self-metalation of a prototypic tetrapyrrole compound, the free-base porphine (2H-P), on the Cu(111) surface. Our multitechnique study combines scanning tunneling microscopy (STM) results with near-edge X-ray absorption fine-structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) data whose interpretation is supported by density functional theory calculations. In the first layer in contact with the copper substrate the molecules adsorb coplanar with the surface as shown by angle-resolved NEXAFS measurements. The quenching of the first resonance in the magic angle spectra of both carbon and nitrogen regions indicates a substantial electron transfer from the substrate to the LUMO of the molecule. The stepwise annealing of a bilayer of 2H-P molecules sequentially transforms the XP and NEXAFS signatures of the nitrogen regions into those indicative of the coordinated nitrogen species of the metalated copper porphine (Cu-P), i.e., we observe a temperature-induced self-metalation of the system. Pre- and post-metalation species are clearly discriminable by STM, corroborating the spectroscopic results. Similar to the free-base porphine, the Cu-P adsorbs flat in the first layer without distortion of the macrocycle. Additionally, the electron transfer from the copper surface to the molecule is preserved upon metalation. This behavior contrasts the self-metalation of tetraphenylporphyrin (2H-TPP) on Cu(111), where both the molecular conformation and the interaction with the substrate are strongly affected by the metalation process.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Bimodal substrate biasing to control γ-Al{sub 2}O{sub 3} deposition during reactive magnetron sputtering

Al{sub 2}O{sub 3} thin films have been deposited at substrate temperatures between 500 °C and 600 °C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.8 dpa for a substrate temperature of 500 °C. This threshold shifts to 0.6 dpa for films grown at 550 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

We report on Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm{sup 2} area PD showed unbiased peak external quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10{sup −8} A/cm{sup 2} at 10 V reverse bias.

36 MATERIALS SCIENCE↗