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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Ground Calibration of the Silicon Drift Detectors for NICER

The Neutron star Interior Composition ExploreR (NICER) is set to be deployed on the International Space Station (ISS) in early 2017. It will use an array of 56 Silicon Drift Detectors (SDDs) to detect soft X-rays (0.2 - 12 keV) with 100 nanosecond timing resolution. Here we describe the e ort to calibrate the detectors in the lab primarily using a Modulated X-ray Source (MXS). The MXS that was customized for NICER provides more than a dozen emission lines spread over the instrument bandwidth, providing calibration measurements for detector gain and spectral resolution. In addition, the fluorescence source in the MXS was pulsed at high frequency to enable measurement of the delay due to charge collection in the silicon and signal processing in the detector electronics. A second chamber, designed to illuminate detectors with either 55Fe, an optical LED, or neither, provided additional calibration of detector response, optical blocking, and effectiveness of background rejection techniques. The overall ground calibration achieved total operating time that was generally in the range of 500-1500 hours for each of the 56 detectors.

Silicon Drift Detectors↗
NASA NTRS2016

Silicon Micromachined Modulated Metasurface Antennas in the Terahertz Range

This paper explores the capabilities of a class of metasurface (MTS), which consists of metalized cylinders on a ground plane, for the realization of modulated MTS antennas at terahertz (THz) frequencies. The proposed structure is particularly appropriate for being micromachined out of a silicon wafer by means of deep reactive ion etching (DRIE). The constraints that DRIE imposes in the design of the MTS unit cell are discussed, along with the advantages of silicon micromachined modulated MTSs with respect to other fabrication approaches in the THz range.

deep-reactive ion etching↗
NASA NTRS2021

On the Oxidation of the Silicon Bond Coat in Environmental Barrier Coatings

Deal and Grove’s formulation is applied to model the oxidation of the silicon bond coat in environmental barrier coatings. The approach is similar to the author’s previous study, except now the oxidant is assumed to flow through the coating as oxygen ions via vacancies on the oxygen sublattice. The use of an “effective permeability” of the oxidant in the coating is required under the vacancy diffusion assumption. It is found that the linear-parabolic growth equation from Deal and Grove, , is still applicable for the oxidation of the silicon bond coat, but the equation for the parameter A must be modified to account for the coating. The expression for B is the same as that obtained by Deal and Grove and thus is unaffected by the presence of a coating. The modified expression for A is a linear function of the coating thickness and includes the ratio of the oxidant permeability in the oxide to its effective permeability in the coating.

silicon oxidation, ionic diffusion, permeation, li↗
NASA NTRS1996

Characterization of Large-Area Silicon Ionization Detectors for the ACE Mission

We report on extensive tests of large-area (10cm diameter) high-purity ion-implanted silicon detectors for th Solar Isotope Spectrometer (SIS), and lithium-drifted silicon detetors for the Cosmic Ray Isotope Spectrometer (CRIS), which are under development for launch on the Advanced Composition Explorer (ACE) mission.

silicon↗
NASA NTRS2019

Highly Absorptive Pupil Mask Fabricated with Black Silicon

Many of NASA’s direct imaging of exoplanet missions and projects require fabricated coronagraph masks to control scattering and diffraction of light. The designed, patterned mask intended for the coronagraphic testbeds are highly absorptive in the visible range on non-metallic regions. In this work, we employed the cryogenic etching process to fabricate black silicon (BSi) to achieve a high aspect ratio (HAR) structures with higher etch rate than conventional reactive ion etching (REI). Recent bidirectional reflectance distribution function (BRDF) measurements of uniformly etched BSi on silicon wafer show highly diffusive BSi with a specular reflective component in the orders of seven magnitudes lower than the total hemispherical reflectance when the polarized or non-polarized incident beam is used.

black-silicon↗
NASA NTRS2019

Highly Absorptive Pupil Mask Fabricated with Black Silicon

Many of NASA’s direct imaging of exoplanet missions and projects require fabricated coronagraph masks to control scattering and diffraction of light. The designed, patterned mask intended for the coronagraphic testbeds are highly absorptive in the visible range on non-metallic regions. In this work, we employed the cryogenic etching process to fabricate black silicon (BSi) to achieve a high aspect ratio (HAR) structures with higher etch rate than conventional reactive ion etching (REI). Recent bidirectional reflectance distribution function (BRDF) measurements of uniformly etched BSi on silicon wafer show highly diffusive BSi with a specular reflective component in the orders of seven magnitudes lower than the total hemispherical reflectance when the polarized or non-polarized incident beam is used.

BRDF↗
NASA NTRS2021

Characterization of Bidirectional Transmissive and Reflective Properties of Black Silicon

This paper describes the initial work of characterizing the transmissive and reflective properties of black silicon diffusers. The diffusers were fabricated from a 100 mm diameter black silicon sample at NASA’s Goddard Space Flight Center (GSFC). The directional hemispherical reflectance from 250 nm to 2500 nm and BRDF/BTDF measurements at 632.8 nm, 1064 nm, and 1550 nm were measured using the GSFC Diffuser Calibration Laboratory’s (DCL) spectrophotometer and optical scatterometer. The diffusers exhibit a low level of specular reflection up to ~1100 nm with no evidence of retroscatter. The measurements are traceable to those made at the National Institute of Standards and Technology (NIST).

Bidirectional Reflectance Distribution Function↗
NASA NTRS2021

NASA in Silicon Valley

Whether looking back only a few years or more than a century, our world has been changing. Communication networks are more widespread and interconnected than at any other time in human history. Computing power that was only imagined a generation ago is now widely available and can fit in the palm of a hand. The miniaturization of the integrated circuit has brought us close to the limit of what is possible with silicon as we explore new possibilities in the quantum realm. For over 80 years, NASA’s Ames Research Center in California’s Silicon Valley has held a special place amidst such change. With change, there also is continuity. Since 1939, Ames contributions have fundamentally shaped fields of study related to aeronautics and space. The ingenuity and problem-solving capabilities of personnel at Ames have affected all our lives in numerous ways, from everyday air travel to how we envision the possibility of life on other worlds. This publication is a mere hint at the rich history of Ames, told primarily through images that capture some of the recurring threads that have intertwined over that time. A bibliography points the reader to more detailed histories of Ames published over the years. They are excellent resources and, like all historical work, unavoidably incomplete. Our standing invitation in the present is to preserve what we can to help us understand where we are and how we arrived.

History↗
NASA NTRS1968

Silicon oxide films grown in microwave discharge

Silicon oxide films thicker than 1000 angstrom are produced in the dense plasma of a microwave discharge. The oxide growth is characterized by a rate limiting diffusion process modified by sputtering effects produced by the discharge. Silicon is rapidly oxidized at temperatures estimated to be 500 degrees C or lower.

Kraitchman, J.↗
NASA NTRS1969

Radiation tolerant silicon nitride insulated gate field effect transistors

Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.

Newman, P. A.↗
NASA NTRS1969

Glass fabric fire barrier for silicone rubber parts

Preformed knitted glass-fabric covers are placed about silicone rubber items in such a way as to completely isolate them from the effects of adjacent fire. These covers permit retention of the desirable resilient properties of the silicone rubber while forming a very effective fire barrier.

Blackmer, K. L.↗