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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Topological electronic properties of silicon

The central role that materials play in human history is exemplified by the three-age division of prehistory into the stone, bronze, and iron ages. References to our present time as the information age or silicon age epitomizes the important role that this semiconducting material came to play in the development of computers and devices that permeate our daily lives. Here we show that the electronic states in silicon have nontrivial topological structures that are captured by a network of Berry flux lines that link at points of high symmetry in the Brillouin zone. Further, This complex network has ice-nodal points where fluxes satisfy ice rules, making silicon a nodal-chain insulator. Fixing the longitudinal momentum parallel to such flux lines yields a two-dimensional Dirac Hamiltonian for the transverse degrees of freedom. Similar to nodal-chain semimetals, we find drumheadlike states in the regions that are delimited by the projections of the bulk Berry flux network on the surface Brillouin zone.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Theoretical study of intrinsic defects in cubic silicon carbide 3C-SiC

Using the local moment counter charge (LMCC) method to accurately represent the asymptotic electrostatic boundary conditions within density functional theory supercell calculations, we present a comprehensive analysis of the atomic structure and energy levels of point defects in cubic silicon carbide (3C-SiC). Finding that the classical long-range dielectric screening outside the supercell induced by a charged defect is a significant contributor to the total energy. we describe and validate a modified Jost screening model to evaluate this polarization energy. This leads to bulk-converged defect levels in finite size supercells. With the LMCC boundary conditions and a standard Perdew-Burke-Ernzerhof (PBE) exchange correlation functional, the computed defect level spectrum exhibits no band gap problem: the range of defect levels spans ~2.4 eV, an effective defect band gap that agrees with the experimental band gap. Comparing with previous literature, our LMCC-PBE defect results are in consistent agreement with the hybrid-exchange functional results of Oda et al. [J. Chem. Phys. 139, 124707 (2013)] rather than their PBE results. The difference with their PBE results is attributed to their use of a conventional jellium approximation rather than the more rigorous LMCC approach for handling charged supercell boundary conditions. The difference between standard dft and hybrid functional results for defect levels lies not in a band gap problem but rather in solving a boundary condition problem. The LMCC-PBE entirely mitigates the effect of the band gap problem on defect levels. The more computationally economical PBE enables a systematic exploration of 3C-SiC defects, where, most notably, we find that the silicon vacancy undergoes Jahn-Teller-induced distortions from the previously assumed T d symmetry, and that the divacancy, like the silicon vacancy, exhibits a site-shift bistability in p -type conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Effect of localization on photoluminescence and zero-field splitting of silicon color centers

The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication O-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-1/2 T-center are the most intensively studied silicon defect centers, yet despite this, there is no consensus on the precise configurations of defect atoms in these centers, and their electronic structures remain ambiguous. Here, in this work, we employ ab initio density functional theory to characterize these defect centers, providing insight into the relaxed structures, band structures, and photoluminescence spectra, which are compared to experimental results. Motivation is provided for how these properties are intimately related to the localization of electronic states in the defect centers. In particular, we present the calculation of the zero-field splitting for the excited triplet state of the G-center defect as the structure is linearly interpolated from the A-configuration to the B-configuration, showing a sudden increase in the magnitude of the D zz component of the zero-field-splitting tensor. By performing projections onto the local orbital states of the defect, we analyze this transition in terms of the symmetry and bonding character of the G-center defect, which sheds light on its potential application as a spin-photon interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Phonon-Assisted Auger-Meitner Recombination in Silicon from First Principles

Here, we present a consistent first-principles methodology to study both direct and phonon-assisted Auger-Meitner recombination (AMR) in indirect-gap semiconductors that we apply to investigate the microscopic origin of AMR processes in silicon. Our results are in excellent agreement with experimental measurements and show that phonon-assisted contributions dominate the recombination rate in both n-type and p-type silicon, demonstrating the critical role of phonons in enabling AMR. We also decompose the overall rates into contributions from specific phonons and electronic valleys to further elucidate the microscopic origins of AMR. Our results highlight potential pathways to modify the AMR rate in silicon via strain engineering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Origin of mechanical and dielectric losses from two-level systems in amorphous silicon

Amorphous silicon contains tunneling two-level systems, which are the dominant energy loss mechanisms for amorphous solids at low temperatures. These two-level systems affect both mechanical and electromagnetic oscillators and are believed to produce thermal and electromagnetic noise and energy loss. However, it is unclear whether the two-level systems that dominate mechanical and dielectric losses are the same; the former relies on the coupling between phonons and two-level systems, with an elastic field coupling constant γ while the latter depends on a two-level systems dipole moment p0, which couples to the electromagnetic field. Mechanical and dielectric loss measurements as well as structural characterization were performed on amorphous silicon thin films grown by electron beam deposition with a range of growth parameters. Samples grown at 425 °C show a large reduction of mechanical loss (34 times) and a far smaller reduction of dielectric loss (2.3 times) compared to those grown at room temperature. Additionally, mechanical loss shows lower loss for thicker films, while dielectric loss shows lower loss for thinner films. Overall, analysis of these results indicate that mechanical loss correlates with atomic density, while dielectric loss correlates with dangling-bond density, suggesting a different origin for these two energy dissipation processes in amorphous silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Acceptor-Induced Bulk Dielectric Loss in Superconducting Circuits on Silicon

The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLSs). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In this work, we show that boron acceptors in silicon constitute a TLS bath that leads to an energy dissipation channel for superconducting circuits. We discuss how the electronic structure of boron acceptors leads to an effective TLS response in silicon. We sweep the boron concentration in silicon and demonstrate the bulk dielectric loss limit from boron acceptors. We show that boron-induced dielectric loss can be reduced in a magnetic field due to the spin-orbit structure of boron. This work provides the first detailed microscopic description of a TLS bath for superconducting circuits and demonstrates the need for ultrahigh-purity substrates for next-generation superconducting quantum processors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Movement of Cracked Silicon Solar Cells During Module Temperature Changes

Cracks in crystalline silicon solar cells can lead to substantial power loss. While the cells' metal contacts can initially bridge these cracks and maintain electrical connections, the bridges are damaged by mechanical loads, including those due to temperature changes. We investigated the metallization bridges that form over cracks in encapsulated silicon solar cells. Microscopic characterization showed that the crack in the silicon can immediately propagate through the metal grid, but the grid can maintain electrical contact once the load is removed. We also quantified the movement of the cell fragments separated by a crack as a function of temperature. Cell fragments are free to move diagonally and to rotate, so the change in gap across the crack during a temperature change varies along the length of the crack. In one sample, we showed that a 10 degrees C temperature change, causing a 2 um increase in the separation of cell fragments, was sufficient to cause a reversible electrical disconnection of metallization bridging a crack.

14 SOLAR ENERGY↗
DOE OSTI2021

Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

In the ideal case, plasma-enhanced atomic layer etching enables the ability to not only remove one monolayer of material but also leave adjacent layers undamaged. This dual mandate requires fine control over the flux of species to ensure efficacy, while maintaining an often arduously low ion energy. Electron beam-generated plasmas are well-suited for etching at low ion energies as they are generally characterized by highly charged particle densities (10 10 –10 11 cm –3 ) and low electron temperatures (<1.0 eV), which provide the ability to deliver a large flux of ions whose energies are <5 eV. Raising the ion energy with substrate biasing thus enables process control over an energy range that extends down to values commensurate with the bond strength of most material systems. In this work, we discuss silicon nitride etching using pulsed, electron beam-generated plasmas produced in argon-SF6 backgrounds. We pay particular attention to the etch rates and selectivity versus oxidized silicon nitride and polycrystalline silicon as a function of ion energy from a few eV up to 50 eV. Here, we find the blanket etch rate of Si 3 N 4 to be in the range of 1 A/s, with selectivities (versus SiO 2 and poly-Si) greater than 10:1 when ion energies are below 30 eV.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Cherenkov photon background for low-noise silicon detectors in space

Future space observatories dedicated to direct imaging and spectroscopy of extra-solar planets will require ultra-low-noise detectors that are sensitive over a broad range of wavelengths. Silicon charge-coupled devices (CCDs), such as EMCCDs, Skipper CCDs, and Multi-Amplifier Sensing CCDs, have demonstrated the ability to detect and measure single photons from ultra-violet to near-infrared wavelengths, making them candidate technologies for this application. In this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic charged particles traversing a silicon detector. In the intense radiation environment of space, energetic cosmic rays produce high-energy tracks and more extended halos of low-energy Cherenkov photons, which are detectable with ultra-low-noise detectors. We present a model of this effect that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low noise silicon detectors in space. We find that the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds that have previously been considered.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

High-throughput identification of spin-photon interfaces in silicon

Color centers in host semiconductors are prime candidates as spin-photon interfaces for quantum applications. Finding an optimal spin-photon interface in silicon would move quantum information technologies toward a mature semiconducting host. However, the space of possible charged defects is vast, making the identification of candidates from experiments alone extremely challenging. Here, we use high-throughput first-principles computational screening to identify spin-photon interfaces among more than 1000 charged defects in silicon. The use of a single-shot hybrid functional approach is critical in enabling the screening of many quantum defects with a reasonable accuracy. We identify three promising spin-photon interfaces as potential bright emitters in the telecom band: Ti$^+_i$, Fe$^0_i$, and Ru$^0_i$. These candidates are excited through defect-bound excitons, stressing the importance of such defects in silicon for telecom band operations. Our work paves the way to further large-scale computational screening for quantum defects in semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

The Effects of Lithium Ions and pH on the Function of Polyacrylic Acid Binder for Silicon Anodes

Binder plays a critical role in the performance of silicon anodes for lithium-ion batteries, specifically by connecting particles of active material and promoting adhesion to the current collector. Recent studies have differed on the relative cycle life of silicon anodes made from water-based polyacrylic acid (PAA) vs LiOH-PAA binders. Differences between the two may be due to the pH value or the extra Li + in the binder, both of which change when LiOH is added to PAA. Here we investigate the impact of these two variables on the performance of silicon anodes. Regarding the effect of Li + , cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) results confirm our hypothesis that the extra Li + facilitates ion transport. Regarding pH, we find that high pH in binders is detrimental to the electrode mechanical integrity, as observed in peeling tests and cross-sectional imaging. However, viscosity tests reveal that increased pH benefits the coating and mixing process. Further, our cycling results show that LiOH-PAA binder maintains greater cell capacity than does PAA, and further that LiOH-PAA at pH 4.5 leads to a cell with the highest capacity. Therefore, an intermediate pH is an optimal compromise between benefits observed for the low and high pH experiments.

25 ENERGY STORAGE↗
DOE OSTI2024

Understanding and Enhancing Silicon Nanoparticle Distribution during Electrode Processing

Silicon-dominant anodes are of great interest because of their potential to boost the cell-level energy of state-of-the-art Li-ion batteries. While silicon materials have been extensively studied, understanding interactions at the electrode level has recieved little attention, especially the coating process of Si particles, which plays an equally important role in unlocking the full potential of silicon anodes. Herein, the electrode processing of a Si-dominated anode (52.8 wt%, 3.5–4.5 mAh cm −2 ) is being investigated to understand the relationship of processing on the morphology and properties of Si anodes at the electrode level. It has been found that almost-undetectable Si agglomerates easily form during electrode processing, which grow into largeprotrusions after lithiation and trigger potential internal shorting and self-discharge problems. A facile slurry filtration step is proposed to homogenize the particle distribution within Si-dominant electrodes which improves the electrochemical performance and storage stability of Si-based Li ion batteries.

Wu, Bingbin↗
DOE OSTI2024

Inactive Overhang in Silicon Anodes

Li-ion batteries contain excess anode area to improve manufacturability and prevent Li plating. These overhang areas in graphite electrodes are active but experience decreased Li + flux during cycling. Over time, the overhang and the anode portions directly opposite to the cathode can exchange Li + , driven by differences in local electrical potential across the electrode, which artificially inflates or decreases the measured cell capacity. Here, we show that lithiation of the overhang is less likely to happen in silicon anodes paired with layered oxide cathodes. The large voltage hysteresis of silicon creates a lower driving force for Li + exchange as lithium ions transit into the overhang, rendering this exchange highly inefficient. For crystalline Si particles, Li + storage at the overhang is prohibitive, because the low potential required for the initial lithiation can act as thermodynamic barrier for this exchange. We use micro-Raman spectroscopy to demonstrate that crystalline Si particles at the overhang are never lithiated even after cell storage at 45 °C for four months. Because the anode overhang can affect the forecasting of cell life, cells using silicon anodes may require different methodologies for life estimation compared to those used for traditional graphite-based Li-ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2020

III/V silicon hybrid laser based on a resonant Bragg structure

We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry–Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.

Davis, Jordan A. (ORCID:0000000343483295)↗
DOE OSTI2024

Post-processing of phase change material in a zero-change commercial silicon photonic process

Integration of phase change material (PCM) with photonic integrated circuits can transform large-scale photonic systems by providing non-volatile control over phase and amplitude. The next generation of commercial silicon photonic processes can benefit from the addition of PCM to enable ultra-low power, highly reconfigurable, and compact photonic integrated circuits for large-scale applications. Despite all the advantages of PCM-based photonics, today’s commercial foundries do not provide them in their silicon photonic processes yet. We demonstrate the first-ever electrically programmable PCM device that is monolithically post-processed in a commercial foundry silicon photonics process using a few fabrication steps and coarse-resolution photolithography. These devices achieved 1.4 dB/μm of amplitude switching contrast using a thin layer of 12.5 nm GeSbTe in this work. We have also characterized the reconfiguration speed as well as repeatability of these devices over 20,000 switching cycles. Our solution enables non-volatile photonic VLSI systems that can be fabricated at low cost and high reliability in a commercial foundry process, paving the way for the development of non-volatile programmable photonic integrated circuits for a variety of emerging applications.

Optics↗
DOE OSTI2019

Development of thinned silicon sensors on 8” wafers (CRADA FRA-2015-0015 Final Report)

Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to >200 m 2 for the existing CMS tracker. CMS and ATLAS upgrades will each require more than 200 m 2 of silicon and the CMS High Granularity Calorimeter (HGC) will require more than 600 m 2 . Cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the area of the silicon sensors. A move from 4” and 6” wafers (the only sizes currently available) to 8” diameter in volume production has the potential for savings of tens of millions of dollars in the detector upgrade programs at the Large Hadron Collider (LHC) and future experiments. In addition to large area, the devices must be radiation hard, which can be achieved by the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Expression of Interest in Contributions to the Electron-Ion Collider: Forward Silicon Vertex/Tracker Developments

The LANL EIC team would like to contribute to the EIC silicon vertex/tracking detector design, construction, commissioning and operation. Our primary focus is for a proposed forward silicon tracker with pseudorapidity coverage from 1 to 3.5 in the nucleon/nuclei beam going (forward) direction at IP-6 of the EIC. LANL LDRD is currently supporting this effort from FY20-FY22 with a funding of $5M. Meanwhile, we are open to collaborate on the other EIC detector sub-systems such as the central, backward silicon vertex/tracking detectors and/or a precision timing detector based on the LGAD technology.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Develop low-temperature diffusional moisture outgassing model for silica-filled silicones

A universal outgassing model for all silica-filled silicones would allow researchers to make moisture outgassing predictions for many different silica-filled silicones using the same sets of kinetic parameters (but with different intensities for the outgassing constituents). In FY 2020, we succeeded in developing such a model for outgassing in a vacuum/dry environment after ~ 1-2 hours of room temperature vacuum pump. That means the FY2020 model does not account for the low temperature diffusional moisture outgassing during the first few hours under vacuum pump. In FY 2021, we have used the experimental technique of dynamic vapor sorption together with the modified Page diffusion model to measure and quantify the low temperature (i. e. room temperature) diffusional moisture release to complete our universal moisture outgassing model for silica-filled silicones from low temperatures to high temperatures.

36 MATERIALS SCIENCE↗