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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

WE-EF-207-02: The Rotate-Plus-Shift C-Arm Trajectory: Theory and First Clinical Results

Purpose: The proposed method enables the acquisition of a complete dataset for 3D reconstruction of C-Arm data using less than 180° rotation. Methods: Typically a C–arm cone–beam CT scan is performed using a circle–like trajectory around a region of interest. Therefore an angular range of at least 180° plus fan–angle must be covered to ensure a completely sampled data set. This fact defines some constraints on the geometry and technical specifications of a C–arm system, for example a larger C radius or a smaller C opening respectively. This is even more important for mobile C-arm devices which are typically used in surgical applications.To overcome these limitations we propose a new trajectory which requires only 180° minusfan–angle of rotation for a complete data set. The trajectory consists of three parts: A rotation of the C around a defined iso–center and two translational movements parallel to the detector plane at the begin and at the end of the rotation (rotate plus shift trajectory). This enables the acquisition of a completely sampled dataset using only 180° minus fan–angle of rotation. Results: For the evaluation of the method we show simulated and measured data. The results show, that the rotate plus shift scan yields equivalent image quality compared to the short scan which is assumed to be the gold standard for C-arm CT today. Compared to the pure rotational scan over only 165°, the rotate plus shift scan shows strong improvements in image quality. Conclusion: The proposed method makes 3D imaging using C–arms with less than 180° rotation range possible. This enables integrating full 3D functionality into a C- arm device without any loss of handling and usability for 2D imaging.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2013

Cone beam x-ray luminescence computed tomography: A feasibility study

Purpose: The appearance of x-ray luminescence computed tomography (XLCT) opens new possibilities to perform molecular imaging by x ray. In the previous XLCT system, the sample was irradiated by a sequence of narrow x-ray beams and the x-ray luminescence was measured by a highly sensitive charge coupled device (CCD) camera. This resulted in a relatively long sampling time and relatively low utilization of the x-ray beam. In this paper, a novel cone beam x-ray luminescence computed tomography strategy is proposed, which can fully utilize the x-ray dose and shorten the scanning time. The imaging model and reconstruction method are described. The validity of the imaging strategy has been studied in this paper. Methods: In the cone beam XLCT system, the cone beam x ray was adopted to illuminate the sample and a highly sensitive CCD camera was utilized to acquire luminescent photons emitted from the sample. Photons scattering in biological tissues makes it an ill-posed problem to reconstruct the 3D distribution of the x-ray luminescent sample in the cone beam XLCT. In order to overcome this issue, the authors used the diffusion approximation model to describe the photon propagation in tissues, and employed the sparse regularization method for reconstruction. An incomplete variables truncated conjugate gradient method and permissible region strategy were used for reconstruction. Meanwhile, traditional x-ray CT imaging could also be performed in this system. The x-ray attenuation effect has been considered in their imaging model, which is helpful in improving the reconstruction accuracy. Results: First, simulation experiments with cylinder phantoms were carried out to illustrate the validity of the proposed compensated method. The experimental results showed that the location error of the compensated algorithm was smaller than that of the uncompensated method. The permissible region strategy was applied and reduced the reconstruction error to less than 2 mm. The robustness and stability were then evaluated from different view numbers, different regularization parameters, different measurement noise levels, and optical parameters mismatch. The reconstruction results showed that the settings had a small effect on the reconstruction. The nonhomogeneous phantom simulation was also carried out to simulate a more complex experimental situation and evaluated their proposed method. Second, the physical cylinder phantom experiments further showed similar results in their prototype XLCT system. With the discussion of the above experiments, it was shown that the proposed method is feasible to the general case and actual experiments. Conclusions: Utilizing numerical simulation and physical experiments, the authors demonstrated the validity of the new cone beam XLCT method. Furthermore, compared with the previous narrow beam XLCT, the cone beam XLCT could more fully utilize the x-ray dose and the scanning time would be shortened greatly. The study of both simulation experiments and physical phantom experiments indicated that the proposed method was feasible to the general case and actual experiments.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

The influence of surface preparation on low temperature HfO{sub 2} ALD on InGaAs (001) and (110) surfaces

Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C{sub max} hypothesized to be a result of poor nucleation of HfO{sub 2} on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D{sub it} high C{sub ox} MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2010

Synthesis and characterization of ZnO nanowires for nanosensor applications

In this paper we report the synthesis of ZnO nanowires via chemical vapor deposition (CVD) at 650 {sup o}C. It will be shown that these nanowires are suitable for sensing applications. ZnO nanowires were grown with diameters ranging from 50 to 200 nm depending on the substrate position in a CVD synthesis reactor and the growth regimes. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman spectroscopy (RS) have been used to characterize the ZnO nanowires. To investigate the suitability of the CVD synthesized ZnO nanowires for gas sensing applications, a single ZnO nanowire device (50 nm in diameter) was fabricated using a focused ion beam (FIB). The response to H{sub 2} of a gas nanosensor based on an individual ZnO nanowire is also reported.

36 MATERIALS SCIENCE↗
DOE OSTI2011

System for Spectral Characterization of Solar Cell Structures

The spectral characterization system presented in this work is one based on a monochromator and it is able to deliver an under - millimeter spot size. The system is fully controlled by computer, shows good repeatability and high accuracy in spectral characterization of photovoltaic devices by the determination of internal quantum efficiency over an extended wavelength range. Two solutions for extended range detectors are explored in this study: pyroelectric and sandwich detectors. Most of the results shown in this abstract were obtained using a pyroelectric detector. The full version of the paper will show a comparison between the two types of detectors. Scanning images (maps) of internal quantum efficiency (IQE) and of external quantum efficiency (QE) can be obtained with high spatial resolution both in AC and DC mode. I-V curves can be obtained in monochromatic or white light in the same location as the IQE curves without a supplemental repositioning. Because IQE curves and I-V curves are obtained in the same location and using the same optics, a full characterization of the photovoltaic device under test is possible in a single run.

14 SOLAR ENERGY↗
DOE OSTI2015

Micro-wrinkling and delamination-induced buckling of stretchable electronic structures

This paper presents the results of experimental and theoretical/computational micro-wrinkles and buckling on the surfaces of stretchable poly-dimethylsiloxane (PDMS) coated with nano-scale Gold (Au) layers. The wrinkles and buckles are formed by the unloading of pre-stretched PDMS/Au structure after the evaporation of nano-scale Au layers. They are then characterized using atomic force microscopy and scanning electron microscopy. The critical stresses required for wrinkling and buckling are analyzed using analytical models. The possible interfacial cracking that can occur along with film buckling is also studied using finite element simulations of the interfacial crack growth. The implications of the results are discussed for potential applications of micro-wrinkles and micro-buckles in stretchable electronic structures and biomedical devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys

Quaternary alloys are essential for the development of high-performance optoelectronic devices. However, immiscibility of the constituent elements can make these materials vulnerable to phase segregation, which degrades the optical and electrical properties of the solid. High-efficiency III–V photovoltaic cells are particularly sensitive to this degradation. InAlAsSb lattice matched to InP is a promising candidate material for high-bandgap subcells of a multijunction photovoltaic device. However, previous studies of this material have identified characteristic signatures of compositional variation, including anomalous low-energy photoluminescence. In this paper, atomic-scale clustering is observed in InAlAsSb via quantitative scanning transmission electron microscopy. Finally, image quantification of atomic column intensity ratios enables the comparison with simulated images, confirming the presence of nonrandom compositional variation in this multispecies alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Determination of band alignment in the single-layer MoS 2 /WSe 2 heterojunction

The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS 2 and WSe 2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe 2 and MoS 2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Chemical instability leads to unusual chemical-potential-independent defect formation and diffusion in perovskite solar cell material CH 3 NH 3 PbI 3

Methylammonium (MA) lead triiodide (MAPbI 3 ) has recently emerged as a promising solar cell material. But, MAPbI3 is known to have chemical instability, i.e., MAPbI3 is prone to decomposition into MAI and PbI 2 even at moderate temperatures (e.g. 330 K). Here, we show that the chemical instability, as reflected by the calculated negligible enthalpy of formation of MAPbI 3 (with respect to MAI and PbI 2 ), has an unusual and important consequence for defect properties, i.e., defect formation energies in low-carrier-density MAPbI 3 are nearly independent of the chemical potentials of constituent elements and thus can be uniquely determined. This allows straightforward calculations of defect concentrations and the activation energy of ionic conductivity (the sum of the formation energy and the diffusion barrier of the charged mobile defect) in MAPbI 3 . Furthermore, the calculated activation energy for ionic conductivity due to V$+\atop{1}$ diffusion is in excellent agreement with the experimental values, which demonstrates unambiguously that V$+\atop{1}$ is the dominant diffusing defect and is responsible for the observed ion migration and device polarization in MAPbI3 solar cells. The calculated low formation energy of a Frenkel pair (V$+\atop{1}$ -I$-\atop{i}$ and low diffusion barriers of V$+\atop{1}$ and Image I$-\atop{i}$ suggest that the iodine ion migration and the resulting device polarization may occur even in single-crystal devices and grain-boundary-passivated polycrystalline thin film devices (which were previously suggested to be free from ion-migration-induced device polarization), leading to device degradation. Moreover, the device polarization due to the Frenkel pair (which has a relatively low concentration) may take a long time to develop and thus may avoid the appearance of the current–voltage hysteresis at typical scan rates.

14 SOLAR ENERGY↗
DOE OSTI2015

Neutral gas temperature maps of the pin-to-plate argon micro discharge into the ambient air

This study is designed to explore the two dimensional temperature maps of the atmospheric argon discharge consisting of pin-to-plane electrodes supplied by a high voltage DC source. After checking the stability of the micro discharge, the two dimensional image plane focused by a quartz lens was scanned by the fiber probe driven by a 3D Mobile Platform. The rotational and vibrational temperatures are calculated using nitrogen emissions collected by the high resolution spectrometer and high sensitive intensified charge coupled device. The rotational temperature varies from 1558.15 K to 2621.14 K and vibrational temperature varies from 3010.38 K to 3774.69 K, indicating a great temperature gradient due to small discharge size. The temperature maps show a lateral expansion and a sharp truncation in the radial direction. A double layers discharge is identified, where an arc discharge coats the glow discharge.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Significantly Enhanced Emission Stability of CsPbBr 3 Nanocrystals via Chemically Induced Fusion Growth for Optoelectronic Devices

Lead–halide perovskite nanocrystals (PNCs) have attracted much attention in recent years due to their outstanding optical properties. We report here a new chemical route for triggering postsynthetic growth of CsPbBr 3 PNCs at room temperature via intentional depletion of stabilizing ligands, resulting in an immediate fusion growth of the as-synthesized PNCs. Upon fusion, the CsPbBr 3 PNCs can grow from ca. 8 nm to ca. 60 nm in lateral dimensions in 48 h, reaching about 14 nm in thickness. More importantly, it was found that the fused PNCs have significantly enhanced optical properties. They showed an exceptionally higher stability to photodegradation. They also displayed sharper emission lines and a higher quantum yield, contrary to the fact that the nanocrystals are much larger. The much-improved optical properties are attributed to the Ruddlesden–Popper (RP) planar faults formed during the fusion process and observed using atomic resolution scanning transmission electron microscopy, which are predicted to result in quantum confinement based on density-functional theory calculations. The newly grown nanocrystals with RP defects are expected to significantly improve light emission properties of the PNCs and find applications in light-emitting diodes and other optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

In Situ STEM-EELS observation of nanoscale interfacial phenomena in all-solid-state batteries

Behaviors of functional interfaces are crucial factors in the performance and safety of energy storage and conversion devices. Indeed, solid electrode–solid electrolyte interfacial impedance is now considered the main limiting factor in all-solid-state batteries rather than low ionic conductivity of the solid electrolyte. In this paper, we present a new approach to conducting in situ scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) in order to uncover the unique interfacial phenomena related to lithium ion transport and its corresponding charge transfer. Our approach allowed quantitative spectroscopic characterization of a galvanostatically biased electrochemical system under in situ conditions. Using a LiCoO 2 /LiPON/Si thin film battery, an unexpected structurally disordered interfacial layer between LiCoO 2 cathode and LiPON electrolyte was discovered to be inherent to this interface without cycling. During in situ charging, spectroscopic characterization revealed that this interfacial layer evolved to form highly oxidized Co ions species along with lithium oxide and lithium peroxide species. These findings suggest that the mechanism of interfacial impedance at the LiCoO 2 /LiPON interface is caused by chemical changes rather than space charge effects. Finally, insights gained from this technique will shed light on important challenges of interfaces in all-solid-state energy storage and conversion systems and facilitate improved engineering of devices operated far from equilibrium.

25 ENERGY STORAGE↗
DOE OSTI2012

Microwave-assisted hydrothermally grown epitaxial ZnO films on Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket MgAl{sub 2}O{sub 4} substrate

In this report, epitaxial ZnO films were grown on Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket MgAl{sub 2}O{sub 4} single crystal substrates using Microwave Assisted Hydrothermal (MAH) method with microwave radiation heating (2.45 GHz) at 90 Degree-Sign C in a short time (within 15 min). Scanning electron microscopy confirms that these films possess smooth surface morphology with fully coalesced grains. In addition, photoluminescence (PL) measurements exhibit strong ultraviolet emission at room temperature, indicating potential applications for short-wave light-emitting photonic devices. The PL properties were improved by a thermal annealing process without generating structural defects. Hall measurements after thermal treatment show the carrier concentration to be of the order of 10{sup 19} cm{sup -3} which is comparable to those grown by conventional solution methods. The MAH method will offer a rapid route to synthesize epitaxial ZnO films with good optical and electrical properties for various applications. - Graphical abstract: FESEM images showing the morphology and cross sectional view of ZnO films grown using microwave assisted hydrothermal method at 90 Degree-Sign C for 30 min. Highlights: Black-Right-Pointing-Pointer Microwave Assisted Hydrothermal (MAH) method was introduced to synthesize epitaxial ZnO films. Black-Right-Pointing-Pointer The films possess smooth surface morphology, fully coalesced grains with high optical properties. Black-Right-Pointing-Pointer It exhibit good electrical properties (carrier concentration 10{sup 19} cm{sup -3}, mobility 19 cm{sup 2}/Vs).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Magnetic and optical properties of electrospun hollow nanofibers of SnO{sub 2} doped with Ce-ion

Cerium doped SnO{sub 2} hollow nanofibers were synthesized by electrospinning. High resolution scanning electron microscope (HRSEM) and transmission electron microscopy (TEM) analysis showed hollow nanofibers with diameters around ∼200 nm. The optimized substitution of Ce ion into SnO{sub 2} lattices happened above 6 mol. % doping as confirmed by Powder X-ray diffraction (XRD) studies. Optical band gap was decreased by the doping confirming the direct energy transfer between f-electrons of rare earth ion and the SnO{sub 2} conduction or valence band. The compound also exhibited room temperature ferromagnetism with the saturation magnetization of 19 × 10{sup −5} emu/g at 6 mol. %. This study demonstrates the Ce doped SnO{sub 2} hollow nanofibers for applications in magneto-optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Microscopic subsurface characterization of layered magnetic materials using magnetic resonance force microscopy

This project resulted in the following accomplishments: 1) The invention of scanned probe ferromagnetic resonance microscopy. Upon implementation and refinement this approach was used to measure static and dynamic magnetic resonance properties of ferromagnets with an unprecedented combination of spectral and spatial resolution. 2) Demonstration and study of spin pumping in a pristine ferromagnet across a boundary defined entirely by a magnetic field gradient, and so free of materials discontinuities. 3) First demonstrated highly efficient dynamic spin injection from Y 3 Fe 5 O 12 (YIG) into NiO, an antiferromagnetic (AF) insulator and robust spin propagation in AF NiO over distances up to 100-nm thickness; both spin injection and spin transport are mediated by the AF spin correlations. 4) Demonstration of exceptionally high efficiency conversion of spin current to charge current achieved in spin pumping from the dynamic magnetization of a ferromagnetic insulator into a variety of adjacent metal films. 5) Seminal study of the nature of spin-orbit coupling in d-electron metals that revealed the dominant sensitivity of the d-orbital moment to the d-electron count and revealing the important roles of both d-electron configuration and atomic number in the physics of the spin Hall effect. 6) Demonstration of observation of FMR by means of optically-detected NV diamond relaxometry that provided a highly sensitive, spatially resolved FMR detection method and revealed spin pumping across 100-nm length scales by means of dipolar coupling. 7) Using magnetic field localization, developed for FMR imaging, demonstrated a novel approach to discretizing spin wave modes to improve the characteristics of auto-oscillators driven by pure spin currents produced by the spin Hall effect. 8) We demonstrated large spin pumping signals from propagating high wavevector spinwaves in thin film YIG find that the spin pumping efficiency was insensitive to wavevector thus emphasizing the promise of thin YIG films for spinwave-based spintronics by allowing for predictable down-scaling of device dimensions and enabling a broad range of operational frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Mechanical Solutions Scan Report

Power lines, poles, and towers are the backbone of the United States (U.S.) electric-power grid. These transmission and distribution networks route electricity from generator to loads. The characteristics of these routes are rapidly changing -- trending towards decentralized renewable generation, electric heating, vehicle charging, and large data-center loads. Coupled with aging infrastructure and the increased frequency of extreme weather events, there is concern about the future reliability and transmission capacity of conductors and adjacent components. This scan report seeks to provide an overview of mechanical solutions to challenges caused by extreme weather events associated with components of transmission and distribution infrastructure, including conductor heat sag, ice accumulation, wind, and wildfire. Many options could increase transmission capacity or reliability, and these are at various stages of technological readiness. Some have only been lab tested, while some have been widely deployed in the U.S. or overseas for decades. The solution categories and providers featured in this report are intended to be comprehensive at the time of publication and to serve as a reference for decision-makers concerned about transmission and distribution reliability. There are two other categories of large, complex solutions, which are not covered in this report: replacing existing conductors with advanced conductors and implementing digital grid enhancing technologies. A separate scan report titled “Advanced Conductor Scan Report,” which discusses advanced carbon-core conductors, was published by the Idaho National Laboratory (INL) in 2023. Information on digital technologies, such as dynamic line ratings, power-flow controllers, and other power electronics and communications-based devices, can be found on the Grid- Enhancing Technologies landing page. Mechanical grid-enhancing technologies, or solutions covered in this report, often do not require full equipment replacement and do not rely on digital components. Mechanical technologies are overlooked because they may be older, simpler, or seemingly “more obvious” than digital or carbon-core technologies. However, it is wise to consider mechanical solutions in a thorough evaluation of grid enhancing technology solutions.

24 - POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2015

Revisiting the inelastic electron tunneling spectroscopy of single hydrogen atom adsorbed on the Cu(100) surface

Inelastic electron tunneling spectroscopy (IETS) of a single hydrogen atom on the Cu(100) surface in a scanning tunneling microscopy (STM) configuration has been investigated by employing the non-equilibrium Green’s function formalism combined with density functional theory. The electron-vibration interaction is treated at the level of lowest order expansion. Our calculations show that the single peak observed in the previous STM-IETS experiments is dominated by the perpendicular mode of the adsorbed H atom, while the parallel one only makes a negligible contribution even when the STM tip is laterally displaced from the top position of the H atom. This propensity of the IETS is deeply rooted in the symmetry of the vibrational modes and the characteristics of the conduction channel of the Cu-H-Cu tunneling junction, which is mainly composed of the 4s and 4p{sub z} atomic orbitals of the Cu apex atom and the 1s orbital of the adsorbed H atom. These findings are helpful for deepening our understanding of the propensity rules for IETS and promoting IETS as a more popular spectroscopic tool for molecular devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

A High-Speed Z-Axis MEMS STM Nanopositioner

Scanning tunneling microscope (STM) is a powerful and versatile tool, not only capable of obtaining topographic information at atomic levels from a conductive surface, but also suited for patterning, manipulation and other applications, all with unprecedented precision. A typical STM’s operation relies on the quantum tunneling phenomenon. Providing a few angstroms of tip-sample separation, and a bias voltage between the two, a tunneling current (TC) is established. The tunneling current is logarithmically proportional to the tip sample separation . During imaging, a three degree of freedom (DOF) piezotube is employed to scan the tip over the surface, while a PI controller drives the Z axis in order to maintain the tunneling current at the set value. Therefore, an image of the sample surface can be constructed using the Z axis controller output, along with the corresponding X, and Y coordinates from the piezotube. Despite its well-established use in high precision applications, the achievable scan speed of the conventional STM has remained limited since its advent. One of the main reasons limiting the achievable scan speed is the relatively low operation bandwidth of the bulky piezotube Z-axis positioner, which is typically less than 1 kHz in conventional systems . This limitation correspondingly hinders the ability of the Z-axis controller to rapidly respond to the changes in the topography during the scan. To address this limitation, we design, build and characterize a high-bandwidth, 1-DOF nanopositioner with an electrostatic parallel plate actuation mechanism and a conductive tip, to replace the Z axis of the currently available STM piezotubes (Figure 1). The device is microfabricated using an SOI wafer with two device layers, where the top-most layer is designated for the tunneling current sensing, and contains the conductive tip realized by FIB induced deposition. The bottom device layer, on the other hand, comprises the actuation mechanism along with the shuttle and mechanical flexures, that provides 2-µm displacement range in one direction, comparable to a typical STM piezoelectric tube scanner. Importantly, the nanopositioner is structurally designed to have a -3dB bandwidth of 15.6 kHz, increasing the STM positioners’ Z axis bandwidth more than an order of magnitude as experimentally shown in Figure 2. Using this system we were able to demonstrate that tunneling current can be successfully established on an HOPG sample in air and successfully maintained for over two minutes (Figures 3-4).

FIB↗