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At least 847 records · Page 47

Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN

We report a comparative synchrotron radiation x-ray diffraction study of GaAs{sub 1−y}N{sub y} micro-structures obtained by two different patterning methods: spatially selective H incorporation achieved by using H-opaque masks and spatially selective H removal attained by laser writing. These methods are emerging as original routes for fabrication of micro- and nano-structures with in-plane modulation of the bandgap energy. By measuring the out-of-plane and in-plane lattice parameters, we find that for both patterning approaches the largest part of the micro-structure volume remains tensile-strained and pseudomorphic to the substrate, regardless of the compressive-strained hydrogenated barriers. However, a larger lattice disorder is probed in the laser-written micro-structures and attributed to partial removal of H and/or strain changes at the micro-structure boundaries. This larger lattice disorder is confirmed by photoluminescence studies.

36 MATERIALS SCIENCE↗

Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreased with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Periodically distributed objects with quasicrystalline diffraction pattern

It is possible to construct fully periodically distributed objects with a diffraction pattern identical to the one obtained for quasicrystals. These objects are probability distributions of distances obtained in the statistical approach to aperiodic structures distributed periodically. The diffraction patterns have been derived by using a two-mode Fourier transform—a very powerful method not used in classical crystallography. It is shown that if scaling is present in the structure, this two-mode Fourier transform can be reduced to a regular Fourier transform with appropriately rescaled scattering vectors and added phases. Detailed case studies for model sets 1D Fibonacci chain and 2D Penrose tiling are discussed. Finally, it is shown that crystalline, quasicrystalline, and approximant structures can be treated in the same way.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dexterous acoustic trapping and patterning of particles assisted by phononic crystal plate

In this letter, we present experimental demonstration of multi-particles trapping and patterning by the artificially engineered acoustic field of phononic crystal plate. Polystyrene particles are precisely trapped and patterned in two dimensional arrays, for example, the square, triangular, or quasi-periodic arrays, depending on the structures of the phononic crystal plates with varying sub-wavelength holes array. Analysis shows that the enhanced acoustic radiation force, induced by the resonant transmission field highly localized near the sub-wavelength apertures, accounts for the particles self-organizing. It can be envisaged that this kind of simple design of phononic crystal plates would pave an alternative route for self-assembly of particles and may be utilized in the lab-on-a-chip devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Regular and irregular patterns of self-localized excitation in arrays of coupled phase oscillators

We study a system of phase oscillators with nonlocal coupling in a ring that supports self-organized patterns of coherence and incoherence, called chimera states. Introducing a global feedback loop, connecting the phase lag to the order parameter, we can observe chimera states also for systems with a small number of oscillators. Numerical simulations show a huge variety of regular and irregular patterns composed of localized phase slipping events of single oscillators. Using methods of classical finite dimensional chaos and bifurcation theory, we can identify the emergence of chaotic chimera states as a result of transitions to chaos via period doubling cascades, torus breakup, and intermittency. We can explain the observed phenomena by a mechanism of self-modulated excitability in a discrete excitable medium.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Realization of spin-dependent splitting with arbitrary intensity patterns based on all-dielectric metasurfaces

We report the realization of spin-dependent splitting with arbitrary intensity patterns based on all-dielectric metasurfaces. Compared with the plasmonic metasurfaces, the all-dielectric metasurface exhibits more high transmission efficiency and conversion efficiency, which makes it possible to achieve the spin-dependent splitting with arbitrary intensity patterns. Our findings suggest a way for generation and manipulation of spin photons, and thereby offer the possibility of developing spin-based nanophotonic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Symmetry plays a key role in the erasing of patterned surface features

We report on how the relaxation of patterns prepared on a thin film can be controlled by manipulating the symmetry of the initial shape. The validity of a lubrication theory for the capillary-driven relaxation of surface profiles is verified by atomic force microscopy measurements, performed on films that were patterned using focused laser spike annealing. In particular, we observe that the shape of the surface profile at late times is entirely determined by the initial symmetry of the perturbation, in agreement with the theory. The results have relevance in the dynamical control of topographic perturbations for nanolithography and high density memory storage.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Investigation about relationships between the symmetries of ferroelectric crystal Ca{sub 0.28}Ba{sub 0.72}Nb{sub 2}O{sub 6} and second-harmonic patterns

The broadband quasi-phase matching (QPM) process in a uniaxial ferroelectric crystal Ca{sub 0.28}Ba{sub 0.72}Nb{sub 2}O{sub 6} (CBN-28) was demonstrated with the second-harmonic wavelength range from 450 nm to 650 nm, and the relationship between the symmetries of CBN-28 and the second-harmonic patterns was experimentally and theoretically investigated based on the random anti-parallel domains in the crystal and QPM conditions. The dependences of frequency-doubled patterns on the wavelength and anisotropy of the nonlinear crystal were also studied, and the frequency-doubled photons were found to be trapped on circles. By analyzing the light-matter interacting Hamiltonians, the trapping force for second-harmonic photons was found to be centripetal and tunable by the fundamental lasers, and the variation tendencies of the rotational velocity of second-harmonic generation photons could also be predicated. The results indicate that the CBN-28 ferroelectric crystal is a promising nonlinear optical material for the generation of broadband frequency-doubled waves, and the analysis on centripetal force based on the interaction Hamiltonians may provide a novel recognition for the investigation of QPM process to be further studied.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si{sub 0.8}Ge{sub 0.2} wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si{sub 0.8}Ge{sub 0.2} bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates

InGaAs/GaAs quantum wells (QWs) grown on μ-patterned Ge/Si substrates by metal organic vapor phase epitaxy are investigated by electron microscopy and spatially resolved photoluminescence (PL) spectroscopy. The lattice parameter mismatch of GaAs and Si is overcome by a Ge buffer layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals form truncated pyramids whose shape is strongly affected by the geometry of the underlying pattern consisting of 8 μm deep and 3–50 μm wide square Si pillars. Comparing the measured PL energies with calculations performed in the effective mass approximation reveals that the QW emission energies are significantly influenced by the GaAs morphology. It is shown that the geometry favors indium diffusion during growth from the inclined facets towards the top (001) facet. The Si pillar-size dependent release of thermally induced strain observed in the PL measurements is confirmed by X-ray diffraction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Imaging outside the box: Resolution enhancement in X-ray coherent diffraction imaging by extrapolation of diffraction patterns

Coherent diffraction imaging is a high-resolution imaging technique whose potential can be greatly enhanced by applying the extrapolation method presented here. We demonstrate the enhancement in resolution of a non-periodical object reconstructed from an experimental X-ray diffraction record which contains about 10% missing information, including the pixels in the center of the diffraction pattern. A diffraction pattern is extrapolated beyond the detector area and as a result, the object is reconstructed at an enhanced resolution and better agreement with experimental amplitudes is achieved. The optimal parameters for the iterative routine and the limits of the extrapolation procedure are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Laws of evolution of slip trace pattern and its parameters with deformation in [1.8.12] – single crystals of Ni{sub 3}Fe alloy

The slip trace pattern of Ni{sub 3}Fe alloy single crystals with the short range order oriented for a single slip were investigated on replica at different stages of deformation using the transmission diffraction electron microscopy method. The connection of staging with the formation of slip trace pattern and the change of its parameters were established. The number of local areas where two or more slip systems work is increased with the change of stages. In these conditions the character of slip localization in the primary slip system is changed from the packets to the homogeneous distribution. The distributions of the distances between slip traces and the shear power in slip traces were plotted. The correlation between the average value of the shear power in the primary slip traces and the average distance between them was revealed in this work. It was established that the rates of the average value growth of the relative local shear and the shear power in the slip traces reach the largest values at the transition stage.

36 MATERIALS SCIENCE↗

On the mechanism of pattern formation in glow dielectric barrier discharge

The formation mechanism of pattern in glow dielectric barrier discharge is investigated by two-dimensional fluid modeling. Experimental results are shown for comparison. The simulation results show that the non-uniform distribution of space charges makes the discharge be enhanced in the high-density region but weakened in its neighborhood, which is considered as an activation-inhibition effect. This effect shows through during a current pulse (one discharge event) but also in a certain period of time after discharge that determines a driving frequency range for the non-uniformity of space charges to be enhanced. The effects of applied voltage, surface charge, electrode boundary, and external field are also discussed. All these factors affect the formation of dielectric-barrier-discharge pattern by changing the distribution or the dynamics of space charges and hence the activation-inhibition effect of non-uniform space charges.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of (111) planes and an apex formed by (137) and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.

36 MATERIALS SCIENCE↗

Vortex circulation and polarity patterns in closely packed cap arrays

For this work, we studied curvature-driven modifications to the magnetostatic coupling of vortex circulation and polarity in soft-magnetic closely packed cap arrays. A phase diagram for the magnetic remanent/transition states at room temperature as a function of diameter and thickness was assembled. For specimens with vortex remanent state (40 nm-thick Permalloy on 330 nm spherical nanoparticles), both vortex circulation and polarity were visualized. Intercap coupling upon vortex nucleation leads to the formation of vortex circulation patterns in closely packed arrays. The remanent circulation pattern can be tailored choosing the direction of the applied magnetic field with respect to the symmetry axis of the hexagonal array. An even and random distribution of vortex polarity indicates the absence of any circulation-polarity coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Isotopomer-selective spectra of a single intact H 2 O molecule in the Cs + (D 2 O) 5 H 2 O isotopologue: Going beyond pattern recognition to harvest the structural information encoded in vibrational spectra

We report the vibrational signatures of a single H 2 O water molecule occupying distinct sites of the hydration network in the Cs + (H 2 O) 6 cluster. This is accomplished using isotopomer selective IR-IR hole-burning on the Cs + (D 2 O) 5 (H 2 O) clusters formed by gas-phase exchange of a single, intact H 2 O molecule for D 2 O in the Cs + (D 2 O) 6 ion. The OH stretching pattern of the Cs + (H 2 O) 6 isotopologue is accurately recovered by superposition of the isotopomer spectra, thus establishing that the H 2 O incorporation is random and that the OH stretching manifold is largely due to contributions from decoupled water molecules. This behavior enables a powerful new way to extract structural information from vibrational spectra of size-selected clusters by explicitly identifying the local environments responsible for specific infrared features. The Cs + (H 2 O) 6 structure was unambiguously assigned to the 4.1.1 isomer (a homodromic water tetramer with two additional flanking water molecules) from the fact that its computed IR spectrum matches the observed overall pattern and recovers the embedded correlations in the two OH stretching bands of the water molecule in the Cs + (D 2 O) 5 (H 2 O) isotopomers. The 4.1.1 isomer is the lowest in energy among other candidate networks at advanced (e.g., CCSD(T)) levels of theoretical treatment after corrections for (anharmonic) zero-point energy (ZPE). With the structure in hand, we then explore the mechanical origin of the various band locations using a local electric field formalism. Furthermore, this approach promises to provide a transferrable scheme for the prediction of the OH stretching fundamentals displayed by water networks in close proximity to solute ions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Design and investigation of planar technology based ultra-wideband antenna with directional radiation patterns

A novel design technique based on planar technology for ultra-wideband (UWB) antennas with different ground shape having directional radiation pattern is being presented here. Firstly, the L-shape corner reflector ground plane antenna is designed with microstrip feed line in order to achieve large bandwidth and directivity. Thereafter, for the further improvement in the directivity as well as for better impedance matching the parabolic-shape ground plane has been introduced. The coaxial feed line is given for the proposed directional antenna in order to achieve better impedance matching with 50 ohm transmission line. The simulation analysis of the antenna is done on CST Microwave Studio software using FR-4 substrate having thickness of 1.6 mm and dielectric constant of 4.4. The simulated result shows a good return loss (S11) with respect to -10 dB. The radiation pattern characteristic, angular width, directivity and bandwidth performance of the antenna have also been compared at different resonant frequencies. The designed antennas exhibit low cost, low reflection coefficient and better directivity in the UWB frequency band.

42 ENGINEERING↗

Effect of residual stress on modal patterns of MEMS vibratory gyroscope

Deep boron diffusion often induces residual stress in bulk micromachined MEMS structures, which may affect the MEMS devices operation. In this study, we studied the modal patterns of MEMS vibratory gyroscope under the residual stress (100 – 1000 MPa). Modal patterns and modal frequencies of the gyro are found to be dependent on the residual stress values. Without any residual stress, the modal frequencies drive and sense modeswere found to be 20.06 kHz and 20.36 kHz respectively. In presence of 450 MPa residual stress, the modal frequencies of the drive and sense modes were changed to 42.75 kHz and 43.07 kHz respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗