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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Interface study and performance of large layer pair ultra-short period W/B{sub 4}C X-ray multilayer

The nature of interfaces in ultra short period W/B{sub 4}C multilayers (MLs) is studied using hard x-ray reflectivity and cross sectional transmission electron microscope. W/B{sub 4}C MLs are fabricated using magnetron sputtering system with systematic varying thickness of both W and B{sub 4}C layers from ∼5 to 30 Å keeping number of layer pairs fixed at 10. It is observed that in low period W/B{sub 4}C ML, as the layer thickness decreases, the interdiffusion plays a significant role because of the discontinuous nature of film. This gives variation of density and roughness of the layer as well as generates thickness errors in the ML structure due to volume changes which is originated by interdifusion process. Finally, W/B{sub 4}C MLs with large number of layer pairs (300) are fabricated with periodicity d= 20 Å which gives ∼54 % of reflectivity at energy 8.047 keV.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Multilayer-graphene-based amplifier of surface acoustic waves

The amplification of surface acoustic waves (SAWs) by a multilayer graphene (MLG)-based amplifier is studied. The conductivity of massless carriers (electrons or holes) in graphene in an external drift electric field is calculated using Boltzmann’s equation. At some carrier drift velocities, the real part of the variable conductivity becomes negative and MLG can be employed in SAW amplifiers. Amplification of Blustein’s and Rayleigh’s SAWs in CdS, a piezoelectric hexagonal crystal of the symmetry group C{sub 6v}, is considered. The corresponding equations for SAW propagation in the device are derived and can be applied to other substrate crystals of the same symmetry. The results of the paper indicate that MLG can be considered as a perspective material for SAW amplification and related applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Multilayered graphene acquires ferromagnetism in proximity with magnetite particles

Anisotropic diamagnetism of pristine graphite and graphene is well known. Here, evidence of significant induced ferromagnetism in multilayer graphene (MLG) decorated with ferrimagnetic Fe{sub 3}O{sub 4} particles is reported. This MLG-Fe{sub 3}O{sub 4} nano-composite was prepared by a one-step ultrasonic treatment at 75 °C in the surfactant sodium dodecyl-benzene-sulfonate. To verify the phase structure and morphology of the composite, X-ray diffraction, scanning and transmission electron microscopy, scanning tunneling electron microscopy, and Raman spectroscopy were employed. Room temperature data of magnetization versus magnetic field showed that the saturation magnetization M{sub S} = 58.6 emu/gm for pristine Fe{sub 3}O{sub 4} increased to M{sub S} = 158.4 emu/gm for a 1:1 composite of Fe{sub 3}O{sub 4} to MLG. These results lead to induced M{sub S} = 253 emu/gm in MLG resulting from its proximity to Fe{sub 3}O{sub 4}. Similar experiments on Fe{sub 3}O{sub 4} to single walled carbon nanotubes (SWNT) composite did not show any induced magnetism in SWNT.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Controlling guided modes in plasmonic metal/dielectric multilayer waveguides

We investigate the mode properties of planar dielectric aluminum-quinoline (Alq{sub 3}) multilayer waveguides comprising one single or three equally spaced embedded nanometer-thin (∼10 nm thick) Alq{sub 3}-Mg{sub 0.9}:Ag{sub 0.1} composite metal-island layers. The plasmonic waveguides were fabricated by organic molecular beam deposition. Transverse magnetic (TM) and transverse electric (TE) modes were selectively excited using the m-line method. The symmetric plasmonic TM{sub 0} mode was launched in all waveguides and—in addition—two higher order plasmonic TM{sub 1} and TM{sub 2} modes were generated in waveguides comprising three metal layers. Other TM modes have hybrid dielectric-plasmonic characters, showing an increased effective refractive index when one electric field antinode is close to a metallic layer. TM modes which have all their antinode(s) in the dielectric layers propagate essentially like dielectric modes. TE modes with antinode(s) at the position of the metal layer(s) are strongly damped while the losses are low for TE modes comprising a node at the position of the composite metal film(s). The possibility to control the effective refractive index and the losses for individual hybrid plasmonic-dielectric TM and dielectric TE modes opens new design opportunities for mode selective waveguides and TM-TE mode couplers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Thermally enhanced perpendicular magnetic anisotropy behaviors of ultrathin [Co/Pd]{sub n} multilayers via NiO{sub x} capping layer

We report the enhanced perpendicular magnetic anisotropy (PMA) features of ultrathin [Co/Pd]{sub 3} multilayers (MLs) employing a NiO{sub x} insertion layer at high annealing temperatures. Thermally enhanced PMA in [Co/Pd]{sub 3}/NiO{sub x} (capping layer) MLs were achieved at a specific capping layer thickness, while no PMA responses were observed for a NiO{sub x} (buffer layer)/[Co/Pd]{sub 3} ML, regardless of NiO{sub x} thickness. X-ray diffraction observations, including rocking curves, identified the relatively different crystalline characteristics of the NiO{sub x} capping and buffer layers. Origin of the enhanced PMAs of [Co/Pd]{sub 3} MLs containing a NiO{sub x} capping layer is described based on the NiO{sub x} capping effect possibly providing additional Co/Oxide i-PMA under high-temperature annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Low resistivity W{sub x}V{sub 1−x}O{sub 2}-based multilayer structure with high temperature coefficient of resistance for microbolometer applications

Materials that exhibit semiconductor-to-metal phase transition (SMT) are commonly used as sensing layers for the fabrication of uncooled microbolometers. The development of highly responsive microbolometers would benefit from using a sensing material that possesses a large thermal coefficient of resistance (TCR) close to room temperature and a resistivity low enough to compromise between noise reduction and high TCR, while it should also satisfies the requirements of current CMOS technology. Moreover, a TCR that remains constant when the IR camera surrounding temperature varies would contribute to achieve reliable temperature measurements without additional corrections steps for TCR temperature dependence. In this paper, the characteristics of the SMT occurring in undoped and tungsten-doped vanadium dioxide thin films deposited on LaAlO{sub 3} (100) substrates are investigated. They are further exploited to fabricate a W{sub x}V{sub 1−x}O{sub 2} (0 ≤ x ≤ 2.5) multilayer structure exhibiting a bottom-up gradient of tungsten content. This MLS displays a combination of properties that is promising for application to uncooled microbolometer, such as a large TCR of −10.4%/ °C and low resistivity values ranging from 0.012 to 0.10 Ω-cm over the temperature range 22 °C–42 °C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Transparent ITO/Ag-Pd-Cu/ITO multilayer cathode use in inverted organic solar cells

The characteristics of transparent ITO/Ag-Pd-Cu (APC)/ITO multilayer cathodes were investigated for use in inverted organic solar cells (IOSCs). The insertion of an APC interlayer into the ITO film effectively led to crystallization of the top ITO layer, unlike that in the Ag interlayer, and resulted in a low sheet resistance of 6.55 Ohm/square and a high optical transmittance of 84.14% without post annealing. In addition, the alloying of the Pd and Cu elements into Ag prevented agglomeration and oxidization of the metal interlayer and led to more stable ITO/APC/ITO films under ambient conditions. The microstructure and interfacial structure of the transparent ITO/APC/ITO cathode in the IOSCs were examined in detail by synchrotron X-ray scattering and high resolution transmission electron microscopy. Furthermore, we suggested a possible mechanism to explain the lower PCE of the IOSCs with an ITO/APC/ITO cathode than that of a reference IOSC with a crystalline ITO cathode using the external quantum efficiency of the IOSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Tunable positive and negative refraction of infrared radiation in graphene-dielectric multilayers

Graphene-dielectric multilayers consisting of alternating layers of atom-thick graphene and nanometer-scale dielectric films exhibit characteristics of hyperbolic metamaterials, in which one positive and one negative permittivity are defined for orthogonal directions. Negative permittivity for electric field polarized in the direction parallel to the conductive graphene sheets gives rise to a negative angle of refraction and low-loss transmission for the side-incidence perspective proposed in this work. The Poynting vector tracing demonstrates the switching between positive and negative refraction in the mid-infrared region by tuning the chemical potential of graphene. This adjustable dual-mode metamaterial holds promise for infrared imaging applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Upgrading multilayer zone plate technology for hard x-ray focusing

Multilayer zone plate (MZP) technology for hard X-ray focusing was upgraded and its focusing performance was evaluated using 20-keV X-rays at the synchrotron beamline (BL24XU) of SPring-8. The MZP consists of MoSi{sub 2} and Si layers alternately deposited on a glass fiber by magnetron sputtering so that all zone boundaries satisfy the Fresnel zone configuration. The focused beam was evaluated using knife-edge scanning in which the measured intensity distribution is identical to the line spread function (LSF) in the focal plane. The focused beamsize of about 30 nm was estimated by oscillation peaks observed in the measured LSF according to Rayleigh’s criterion.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Tailoring the highest occupied molecular orbital level of poly(N-vinylcarbazole) hole transport layers in organic multilayer heterojunctions

We report the tailoring of the electronic structure of poly(N-vinylcarbazole) (PVK) using a mixture layer of polyaniline:poly(p-styrenesulfonic acid) (PANI:PSS) in organic multilayer PVK/PANI:PSS/poly(3,4-ethylenedioxythiophene):PSS heterojunctions. The overall electronic structure of the PVK overlayer was systematically down-shifted while the work function of PANI:PSS increased as a function of the PSS-to-PANI weight ratio for the ratio range from 1 to 11 in the PANI:PSS film. The down-shift in the highest occupied molecular orbital of PVK markedly reduced the hole injection barrier from PVK to quantum-dot (QD) layers in QD-light emitting diode (QD-LED) structures, resulting in superior electrical and electroluminescent characteristics for QD-LEDs. The influences of PANI:PSS thickness on the electronic structure of PVK and the performance of QD-LEDs are also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance as a function of J in a multilayer hybrid white OLED that combines fluorescent blue with phosphorescent green and red emission. We investigate two models for TTA and TPQ involving the phosphorescent green and red emitters: short-range nearest-neighbor quenching and long-range Förster-type quenching. Short-range quenching predicts roll-off to occur at much higher J than measured. Taking long-range quenching with Förster radii for TTA and TPQ equal to twice the Förster radii for exciton transfer leads to a fair description of the measured IQE-J curve, with the major contribution to the roll-off coming from TPQ. The measured decrease of the ratio of phosphorescent to fluorescent component of the emitted light with increasing J is correctly predicted. A proper description of the J-dependence of the ratio of red and green phosphorescent emission needs further model refinements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Static deflection analysis of non prismatic multilayer p-NEMS cantilevers under electrical load

Deflection of Euler-Bernoulli non prismatic multilayer piezoelectric nano electromechanical (p-NEMS) cantilever beams have been studied theoretically for various profiles of p-NEMS cantilevers by applying the electrical load. This problem has been answered by applying the boundary conditions derived by simple polynomials. This method is applied for various profiles like rectangular and trapezoidal by varying the thickness of the piezoelectric layer as well as the material. The obtained results provide the better deflection for trapezoidal profile with ZnO piezo electric layer of suitable nano cantilevers for nano scale applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Modifications of band gap in Si/Ge multilayers through vacuum annealing

In the present paper, important experimental findings and their impact on physical properties of Si/Ge systems are presented with the focus on structural and electronic properties investigations also covering band gap engineering. The use of synchrotron radiation based valence band photoemission spectroscopy technique has been demonstrated which provides the variation in bandgap values as a function of annealing on [Si/Ge]{sub x10} multilayers structure. For this purpose, the required VB offsets are obtained by considering the corresponding VB maximum of as prepared sample as a reference. The bandgap values thus obtained show a gradually decreasing pattern with increasing temperature, which is discussed in terms of the effect of various factors such as: (i) quantum confinement effect normally observed in confined systems (ii) change in the annealing induced intermixing leading to the formation of SiGe alloy and (iii) roughness at the surface/interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Multilayer MgB{sub 2} superconducting quantum interference filter magnetometers

We report two types of all-MgB{sub 2} superconductive quantum interference filter (SQIF) magnetometers that can measure absolute magnetic fields with high sensitivity. In one configuration, the SQIFs were made of 20 multilayer nonplanar all-MgB{sub 2} superconducting quantum interference devices (SQUIDs) connected in parallel with loop areas ranging in size from 0.4 to 3.6 μm{sup 2}. These devices are sensitive to magnetic fields parallel to the substrate and show a single antipeak from 3 to 16 K with a maximum transfer function of ∼16 V/T at 3 K and a field noise of ∼110 pT/Hz{sup 1/2} above 100 Hz at 10 K. In a second configuration, the SQIFs were made with 16 planar SQUIDs connected in parallel with loop areas ranging in size from 4 μm{sup 2} to 25 μm{sup 2} and are sensitive to the magnetic fields perpendicular to the substrate. The planar SQIF shows a single antipeak from 10 to 22 K with a maximum transfer function of 7800 V/T at 10 K and a field noise of ∼70 pT/Hz{sup 1/2} above 100 Hz at 20 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Development of high damage threshold multilayer thin film beam combiner for laser application

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm{sup 2} at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Structure determination of a multilayer with an island-like overlayer using hard x-ray photoelectron spectroscopy

We use hard X-ray photoelectron spectroscopy (HAXPES) to obtain the surface structure of a multilayer Au/SiO{sub 2}/Si substrate sample with an island-like overlayer. Photoelectron intensities are measured as a function of incident photon energy (PE) and take-off angle (TOA, measured from the sample surface). The Au layer coverage and Au and SiO{sub 2} layer thicknesses are obtained by the PE dependence, and are used for the following TOA analysis. The Au island lateral width in the cross section is obtained by the TOA dependence, including information about surface roughness, in consideration of the island shadowing at small TOAs. In both cases, curve-fitting analysis is conducted. The surface structure, which consists of layer thicknesses, overlayer coverage and island width, is determined nondestructively by a combination of PE and TOA dependent HAXPES measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗