Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “MEMORY DEVICES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Nanoscale Probing of Elastic–Electronic Response to Vacancy Motion in NiO Nanocrystals

Measuring the diffusion of ions and vacancies at nanometer length scales is crucial to understanding fundamental mechanisms driving technologies as diverse as batteries, fuel cells, and memristors; yet such measurements remain extremely challenging. Here in this paper, we employ a multimodal scanning probe microscopy (SPM) technique to explore the interplay between electronic, elastic, and ionic processes via first-order reversal curve I–V measurements in conjunction with electrochemical strain microscopy (ESM). The technique is employed to investigate the diffusion of oxygen vacancies in model epitaxial nickel oxide (NiO) nanocrystals with resistive switching characteristics. Results indicate that opening of the ESM hysteresis loop is strongly correlated with changes to the resonant frequency, hinting that elastic changes stem from the motion of oxygen (or cation) vacancies in the probed volume of the SPM tip. These changes are further correlated to the current measured on each nanostructure, which shows a hysteresis loop opening at larger (~2.5 V) voltage windows, suggesting the threshold field for vacancy migration. This study highlights the utility of local multimodal SPM in determining functional and chemical changes in nanoscale volumes in nanostructured NiO, with potential use to explore a wide variety of materials including phase-change memories and memristive devices in combination with site-correlated chemical imaging tools.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Mechanical control of electroresistive switching

Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for non-volatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should allow control by mechanical stimuli, the behavior we refer to as piezochemical effect. We verify this effect experimentally, and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current based read-out.

Kim, Yunseok↗
DOE OSTI2017

Out-of-plane chiral domain wall spin-structures in ultrathin in-plane magnets

Chiral spin textures in ultrathin films, such as skyrmions or chiral domain walls, are believed to offer large performance advantages in the development of novel spintronics technologies. While in-plane magnetized films have been studied extensively as media for current- and field-driven domain wall dynamics with applications in memory or logic devices, the stabilization of chiral spin textures in in-plane magnetized films has remained rare. Here we report a phase of spin structures in an in-plane magnetized ultrathin film system where out-of-plane spin orientations within domain walls are stable. Moreover, while domain walls in in-plane films are generally expected to be non-chiral, we show that right-handed spin rotations are strongly favoured in this system, due to the presence of the interfacial Dzyaloshinskii-Moriya interaction. These results constitute a platform to explore unconventional spin dynamics and topological phenomena that may enable high-performance in-plane spin-orbitronics devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Infrared nano-spectroscopy of ferroelastic domain walls in hybrid improper ferroelectric Ca 3 Ti 2 O 7

Ferroic materials are well known to exhibit heterogeneity in the form of domain walls. Understanding the properties of these boundaries is crucial for controlling functionality with external stimuli and for realizing their potential for ultra-low power memory and logic devices as well as novel computing architectures. In this work, we employ synchrotron-based near-field infrared nano-spectroscopy to reveal the vibrational properties of ferroelastic (90° ferroelectric) domain walls in the hybrid improper ferroelectric Ca 3 Ti 2 O 7 . By locally mapping the Ti-O stretching and Ti-O-Ti bending modes, we reveal how structural order parameters rotate across a wall. Thus, we link observed near-field amplitude changes to underlying structural modulations and test ferroelectric switching models against real space measurements of local structure. This initiative opens the door to broadband infrared nano-imaging of heterogeneity in ferroics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The role of lattice dynamics in ferroelectric switching

Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO 3 ) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO 3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Néel domain walls with bistable chirality in a perpendicularly magnetized ferrimagnetic insulator

Field-free spin-orbit torque-driven domain wall motion in magnetic thin films with perpendicular magnetic anisotropy (PMA) requires the domain walls to have Néel character. Conventionally, Néel domain walls are stabilized by the Dzyaloshinskii-Moriya interaction (DMI) in ultrathin films. Here, in a europium iron garnet thin film with PMA and an additional uniaxial in-plane anisotropy, we demonstrate two bistable Néel domain wall states in the absence of DMI, and the capability to toggle the wall states with an in-plane field pulse and consequently their directions of motion under a current pulse. We present a phase diagram for the bistable Néel domain wall states as a function of in-plane field pulse width and amplitude. By fitting the experimental data to an analytical model of Néel wall reversal through the nucleation and propagation of Bloch lines, we extract the length of the initial reversed domain wall segment and Bloch line nucleation energy barrier. Current-driven motion of in-plane anisotropy stabilized Néel walls is qualitatively different from that of DMI-stabilized ones owing to the different symmetry of the effective fields that stabilize the Néel configuration. Furthermore, we present a proof of principle demonstration for 2-bit random number generation based on the stochastic reversal of domain wall chirality. These results provide critical insight into the topological energy barrier of Bloch lines and identify paths towards domain wall-based memory and computing devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Self-biased magnetoelectric switching at room temperature in three-phase ferroelectric–antiferromagnetic–ferrimagnetic nanocomposites

Magnetoelectric systems could be used to develop magnetoelectric random access memory and microsensor devices. One promising system is the two-phase 3-1-type multiferroic nanocomposite in which a one-dimensional magnetic column is embedded in a three-dimensional ferroelectric matrix. However, it suffers from a number of limitations including unwanted leakage currents and the need for biasing with a magnetic field. Here we show that the addition of an antiferromagnet to a 3-1-type multiferroic nanocomposite can lead to a large, self-biased magnetoelectric effect at room temperature. Our three-phase system is composed of a ferroelectric Na 0.5 Bi 0.5 TiO 3 matrix in which ferrimagnetic NiFe 2 O 4 nanocolumns coated with antiferromagnetic p-type NiO are embedded. This system, which is self-assembled, exhibits a magnetoelectric coefficient of up to 1.38 × 10 –9 s m –1 , which is large enough to switch the magnetic anisotropy from the easy axis (K eff = 0.91 × 10 4 J m –3 ) to the easy plane (K eff = –1.65 × 10 4 J m –3 ).

42 ENGINEERING↗
DOE OSTI2024

Imaging of voltage-controlled switching of magnetization in highly magnetostrictive epitaxial Fe–Ga microstructures

The magnetoelectric behavior of epitaxial Fe–Ga microstructures on top of a (001)-oriented PMN–PT piezoelectric substrate is imaged with magnetic X-ray microscopy. Additionally, the micron-scale strain distribution in PMN–PT is characterized by X-ray microdiffraction and examined with respect to the results of the Fe–Ga magnetoelectric switching. The magnetic reorientation of Fe–Ga is found to be strongly correlated with size, shape, and crystallographic orientation of the microstructures. In the case of square-shaped structures, size dictates the influence of the strain distribution on both the initialization of the ground state and on the magnetic reorientation during application of voltage. On the other hand, elliptical microstructures demonstrate completely different magnetic responses depending on the relative orientation of their long axis with respect to the crystallographic directions of the PMN–PT. This study demonstrates that engineering the behavior of highly magnetostrictive epitaxial microdevices is possible. It further elucidates that voltage-induced actuation can be largely tuned to achieve the desired type of magnetic switching ranging from vortex circulation reversal, domain wall motion, to a large rotation of magnetization. Because of the outstanding properties of the investigated material system, the reported findings are expected to be of great interest for the realization of next-generation energy-efficient magnetic memory and logic devices.

42 ENGINEERING↗
DOE OSTI2016

Structural and magnetic studies of tin doped α-Fe{sub 2}O{sub 3} (α-Sn{sub x}Fe{sub 2-x}O{sub 3}) nanoparticles prepared by microwave assisted synthesis

Hematite (α-Fe{sub 2}O{sub 3}) doped with tetravalent ions have potential applications in various fields such as gas sensors, memories, energy storage devices because of their electrical and magnetic properties. Microwave assisted synthesis was used to prepare Tin doped α-Fe{sub 2}O{sub 3} [α-Sn{sub x}Fe{sub 2-x}O{sub 3}]. The structural and morphological studies were investigated using X-ray diffraction (XRD) and Scanning electron microscopy (SEM). XRD patterns revealed that α-Fe{sub 2}O{sub 3} and α-Sn{sub x}Fe{sub 2-x}O{sub 3} were having rhombohedral structure. The compositional study was done by Energy dispersive X-ray Spectroscopy (EDS). The magnetic properties were studied by Vibrating Sample Magnetometry (VSM). Results shows that the prepared samples were found to be antiferromagnetic in nature and the results are discussed in detail.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Magnetization reversal in magnetic dot arrays: Nearest-neighbor interactions and global configurational anisotropy

Various proposals for future magnetic memories, data processing devices, and sensors rely on a precise control of the magnetization ground state and magnetization reversal process in periodically patterned media. In finite dot arrays, such control is hampered by the magnetostatic interactions between the nanomagnets, leading to the non-uniform magnetization state distributions throughout the sample while reversing. In this paper, we evidence how during reversal typical geometric arrangements of dots in an identical magnetization state appear that originate in the dominance of either Global Configurational Anisotropy or Nearest-Neighbor Magnetostatic interactions, which depends on the fields at which the magnetization reversal sets in. Based on our findings, we propose design rules to obtain the uniform magnetization state distributions throughout the array, and also suggest future research directions to achieve non-uniform state distributions of interest, e.g., when aiming at guiding spin wave edge-modes through dot arrays. Our insights are based on the Magneto-Optical Kerr Effect and Magnetic Force Microscopy measurements as well as the extensive micromagnetic simulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Brillouin-Mandelstam spectroscopy of standing spin waves in a ferrite waveguide

This article reports results of experimental investigation of the spin wave interference over large distances in the Y 3 Fe 2 (FeO 4 ) 3 waveguide using Brillouin-Mandelstam spectroscopy. Two coherent spin waves are excited by the micro-antennas fabricated at the edges of the waveguide. The amplitudes of the input spin waves are adjusted to provide approximately the same intensity in the central region of the waveguide. The relative phase between the excited spin waves is controlled by the phase shifter. The change of the local intensity distribution in the standing spin wave is monitored using Brillouin-Mandelstam light scattering spectroscopy. Experimental data demonstrate the oscillation of the scattered light intensity depending on the relative phase of the interfering spin waves. The oscillations of the intensity, tunable via the relative phase shift, are observed as far as 7.5 mm away from the spin-wave generating antennas at room temperature. The obtained results are important for developing techniques for remote control of spin currents, with potential applications in spin-based memory and logic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Enhancement of perpendicular magnetic anisotropy and spin-orbit torque in Ta/Pt/Co/Ta multi-layered heterostructures through interfacial diffusion

Heavy metal/ferromagnetic metal bi-layered structures that exhibit both strong perpendicular magnetic anisotropy (PMA) and large spin-orbit torque (SOT) efficiency have high potential in high-density, low-power memory, and logic device applications. Here, we report the enhancement of PMA and SOT in Ta/Pt/Co/Ta multi-layered heterostructures through interfacial diffusion. The structures can exhibit PMA fields of 9100 Oe at 300 K and 14100 Oe at 10 K and an effective spin Hall angle (SHA) of 0.61 ± 0.03 at 300 K. These values are larger than the corresponding values reported previously for similar heterostructures. The current-induced magnetization switching was demonstrated. The critical switching current density is on the order of 10 6 A/cm 2 , and the corresponding switching efficiency is higher than that reported for similar structures. X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy analyses suggest a strong correlation between the observed PMA and SOT enhancement and the interfacial diffusion during the sputtering growth of the samples. It is very likely that the interfacial diffusion gives rise to enhanced spin-orbit coupling at the interface, while the latter results in enhancement in the PMA, SHA, and switching efficiency in the structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Spin–orbit torques in structures with asymmetric dusting layers

Current-induced spin–orbit torques (SOTs) in heavy metal/ferromagnet heterostructures have emerged as an efficient method for magnetization switching with applications in nonvolatile magnetic memory and logic devices. However, experimental realization of SOT switching of perpendicular magnetization requires an additional inversion symmetry breaking, calling for modifications of the conventional SOT heterostructures. In this work, we study SOTs and deterministic switching of perpendicular magnetization by inserting different asymmetric dusting layers at the heavy metal/ferromagnet interface. Similar to the previous works with lateral structural asymmetry, we study the emergence of current-induced perpendicular effective magnetic fields (H z eff ). By examining three different material combinations of heavy metal/dusting layers (W/IrMn, Pt/IrMn, and W/Ta), we shed light on the origins of H z eff ; we show that H z eff is generically created in all the studied asymmetric structures, has a close correlation with the interfacial magnetic anisotropy, and is independent of the signs of spin Hall angles of the materials. Furthermore, we show that the induction of H z eff enables field-free deterministic SOT switching of perpendicular magnetization. Our results can be used in designing SOT heterostructures for practical applications in nonvolatile technologies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Stabilization of magnetic bubbles in [Ni/Co]n multilayers on an oxygen-reconstructed Nb(110) surface via an ultra-thin Cu interlayer

Magnetic thin films hosting topological spin textures, such as magnetic skyrmions, hold high potential for breakthroughs in the field of spintronics, due to good scalability and energy efficiency. Novel computational architectures such as memory-in-logic devices rely on material platforms able to host those topological spin textures. Furthermore, recently proposed designs of novel quantum information technologies are based on heterostructures where topological spin textures are in direct proximity to a superconducting layer. Here, we demonstrate the stabilization of out-of-plane magnetic bubbles in highly ordered [Ni/Co]n multilayers on a Nb(110) single crystal. This is achieved without the need for the removal of the well-known Nb(110)-oxide surface reconstruction, due to the introduction of an ultra-thin Cu interlayer in between the Nb substrate and the magnetic multilayer. The Cu interlayer generates a well-ordered hexagonal surface, which is key for the epitaxial growth of the [Ni/Co]n multilayers hosting the desired out-of-plane anisotropy. The magnetic ground state of the prepared material stacks is directly imaged via spin-polarized low-energy electron microscopy, revealing the presence of magnetic bubble domains with lateral sizes as small as 450 nm.

Dibajeh, Ahmad↗
DOE OSTI2017

Joule Heating Effect on Field-Free Magnetization Switching by Spin-Orbit Torque in Exchange-Biased Systems

Switching of magnetization via spin-orbit torque provides an efficient alternative for nonvolatile memory and logic devices. However, to achieve deterministic switching of perpendicular magnetization, an external magnetic field collinear with the current is usually required, which makes these devices inappropriate for practical applications. As such, in this work, we examine the current-induced magnetization switching in a perpendicularly magnetized exchange-biased Pt/CoFe/IrMn system. A magnetic field annealing technique is used to introduce in-plane exchange biases, which are quantitatively characterized. Under proper conditions, field-free current-driven switching is achieved.We study the Joule heating effect, and we show how it can decrease the in-plane exchange bias and degrade the field-free switching. Furthermore, we discuss that the exchange-bias training effect can have similar effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Topological spin texture in Janus monolayers of the chromium trihalides Cr(I, X ) 3

Topological magnetic states are promising for ultradense memory and logic devices. Recent progress in two-dimensional magnets encourages the idea to realize topological states, such as skyrmions and merons, in freestanding monolayers. However, monolayers such as CrI 3 lack Dzyaloshinskii-Moriya interactions (DMIs) and thus do not naturally exhibit skyrmions/merons but rather a ferromagnetic state. Here we propose the fabrication of Cr(I, $X)_3$ Janus monolayers, in which the Cr atoms are covalently bonded to the underlying I ions and top-layer Br or Cl atoms. By performing first-principles calculations and Monte Carlo simulations, we identify strong enough DMIs, which leads to not only helical cycloid phases, but also to topologically nontrivial states, such as the intrinsic domain wall skyrmions in Cr(I, Br) 3 and the magnetic-field-induced bimerons in Cr(I, Cl) 3 . Finally, microscopic origins of such spin textures are revealed as well.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift computation for a uniformly polarized prolate ellipsoid with varying aspect ratio in the absence of screening charges.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Spontaneous Valley Polarization of Itinerant Electrons

Memory or transistor devices based on an electron’s spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit an electron’s valley index rather than its spin. An important component in this quest would be the ability to control the valley index in a convenient fashion. Here we show that the valley polarization can be switched from zero to 1 by a small reduction in density, simply tuned by a gate bias, in a two-dimensional electron system. This phenomenon, which is akin to Bloch spin ferromagnetism, arises fundamentally as a result of electron-electron interaction in an itinerant, dilute electron system. Essentially, the kinetic energy favors an equal distribution of electrons over the available valleys, whereas the interaction between electrons prefers single-valley occupancy below a critical density. The gate-bias-tuned transition we observe is accompanied by a sudden, twofold change in sample resistance, making the phenomenon of interest for potential valleytronic transistor device applications. Finally, our observation constitutes a quintessential demonstration of valleytronics in a very simple experiment.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗