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At least 847 records · Page 47

Metal-Dependent Photodissociation of Hydrazone Photoswitches from Rare-Earth Complexes

Rare-earth element separation processes often rely on a small decrease in ionic radii along the series of elements. Separation processes based on the distinct optical properties of REs remain less explored, although photochemical methods may offer a viable alternative. Accurate selection of the synthetic precursors of a photoswitchable acylhydrazonic ligand led to a system that could quantitatively isomerize (E−to−Z) upon irradiation with commercial LED lights. Coordination of the photoswitch with RE III nitrates (RE = La−Lu except Pm and Y) resulted in the retention of the photoswitching properties observed in solution. The lower binding affinity of the generated Z−isomer with RE III ions yielded the dissociation of the complexes upon irradiation (photodissociation) with the release of RE−nitrates in solution. The rate of the reaction was found to be dependent on the optical properties of the RE III ions, with nonemissive complexes (no 4f excited states) dissociating faster than emissive ones (having accessible 4f excited states). A thorough solid-state characterization of the complexes was performed by using crystallographic and photochemical methods. Ultimately, the accessibility of the 4f excited states of the metals following light irradiation and excitation of the ligand led to a decrease in the rate of the reaction due to quenching of the ligand excited state. These results demonstrate that the direct modulation of the metal coordination environment, combined with the metal-dependent reaction rate, could provide a strategy for the development of RE−separation processes based on differences in their optical properties.

Ions↗

An Integrative Model for Soil Biogeochemistry and Methane Processes. II: Warming and Elevated CO 2 Effects on Peatland CH 4 Emissions

Peatlands are one of the largest natural sources for atmospheric methane (CH 4 ), a potent greenhouse gas. Climate warming and elevated atmospheric carbon dioxide (CO 2 ) are two important environmental factors that have been confirmed to stimulate peatland CH 4 emissions; however, the mechanisms underlying enhanced emissions remain elusive. A data-model integration approach was applied to understand the CH 4 processes in a northern temperate peatland under a gradient of warming and doubled atmospheric CO 2 concentration. We found that warming and elevated CO 2 stimulated CH 4 emissions through different mechanisms. Warming initially stimulated but then suppressed vegetative productivity while stimulating soil organic matter (SOM) mineralization and dissolved organic carbon (DOC) fermentation, which led to higher acetate production and enhanced acetoclastic and hydrogenotrophic methanogenesis. Warming also enhanced surface CH 4 emissions, which combined with warming-caused decreases in CH 4 solubility led to slightly lower dissolved CH 4 concentrations through the soil profiles. Elevated CO 2 enhanced ecosystem productivity and SOM mineralization, resulting in higher DOC and acetate concentrations. Higher DOC and acetate concentrations increased acetoclastic and hydrogenotrophic methanogenesis and led to higher dissolved CH 4 concentrations and CH 4 emissions. Both warming and elevated CO 2 had minor impacts on CH 4 oxidation. A meta-analysis of warming and elevated CO 2 impacts on carbon cycling in wetlands agreed well with a majority of the modeled mechanisms. Finally, this mechanistic understanding of the stimulating impacts of warming and elevated CO 2 on peatland CH 4 emissions enhances our predictability on the climate-ecosystem feedback.

54 ENVIRONMENTAL SCIENCES↗

Enhancing detection of topological order by local error correction

The exploration of topologically-ordered states of matter is a long-standing goal at the interface of several subfields of the physical sciences. Such states feature intriguing physical properties such as long-range entanglement, emergent gauge fields and non-local correlations, and can aid in realization of scalable fault-tolerant quantum computation. However, these same features also make creation, detection, and characterization of topologically-ordered states particularly challenging. Motivated by recent experimental demonstrations, we introduce a paradigm for quantifying topological states—locally error-corrected decoration (LED)—by combining methods of error correction with ideas of renormalization-group flow. Our approach allows for efficient and robust identification of topological order, and is applicable in the presence of incoherent noise sources, making it particularly suitable for realistic experiments. We demonstrate the power of LED using numerical simulations of the toric code under a variety of perturbations. We subsequently apply it to an experimental realization, providing new insights into a quantum spin liquid created on a Rydberg-atom simulator. Finally, we extend LED to generic topological phases, including those with non-abelian order.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.

36 MATERIALS SCIENCE↗

GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

A GaInN light-emitting diode (LED) structure is analyzed that employs a separate epitaxial growth for the p-type region, i.e., the AlGaN electron-blocking layer (EBL) and p-type GaN cladding layer, followed by wafer or chip bonding. Such LED structure has a polarization-inverted EBL and allows for uncompromised epitaxial-growth optimization of the p-type region, i.e., without the need to consider degradation of the quantum-well active region during p-type region growth. Simulations show that such an LED structure reduces electron leakage, reduces the efficiency droop, improves hole injection, and has the potential to extend high efficiencies into the green spectral region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A fluctuational electrodynamics model for the optimization of light-extraction efficiency in thin-film light-emitting diodes

The rapid development of thin film light-emitting diodes (LEDs) has enabled the enhancement of the light extraction beyond geometrical limits but more quantitative understanding of the underlying optical processes is required to fully optimize the extraction. We present first-principle calculations of the light extraction efficiency and optical energy flow in thin-film LEDs. The presented model generalizes the methods of fluctuational electrodynamics to excited semiconductors and simultaneously accounts for wave optical effects, e.g., interference and near-field coupling as well as the internal absorption of the light-emitting material in determining the rate of light emission and internal dissipation in the optical cavity formed by a planar LED. The calculations show that in structures with a metallic mirror, the emissivity of the active region can approach unity at selected wavelengths, even when the nominal emissivity of the active region is only moderate. However, the results also show that near-field coupling of emission from the active region to the mirror can provide a substantial non-radiative loss channel reducing the maximum light extraction efficiency to 0.67 in our example setup. These losses can be partly compensated by the efficient photon recycling enabled by thick active regions that quench emission to confined modes and thereby reduce parasitic absorption.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Is it viable to improve light output efficiency by nano-light-emitting diodes?

Nanopillar arrays with InGaN/GaN multiple-quantum-disks (MQDs) are fabricated by focused-ion-beam milling with surface damage layer removed by KOH wet etching. Nano-light-emitting diodes (Nano-LEDs) made of the InGaN/GaN MQD nanopillars are found to have 19.49% less output power than that of a conventional LED. The reasons are analyzed in detail and considering their current-voltage and electroluminescence characteristics, internal quantum efficiency, external quantum efficiency, light extraction, and wall-plug efficiency. Our results suggest that nanopillar-LED can outperform if the density can be increased to 2.81 × 10{sup 9} cm{sup −2} with the size unchanged or the size can be increased to 854.4 nm with the density unchanged.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20 mA and a 27.0% efficiency droop at 100 mA (corresponding to a current density of 69 A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

This paper presents an extensive investigation of the deep levels related to non-radiative recombination in InGaN/GaN light-emitting diodes (LEDs). The study is based on combined optical and deep-level transient spectroscopy measurements, carried out on LEDs with identical structure and with different values of the non-radiative recombination coefficient. Experimental data lead to the following, relevant, results: (i) LEDs with a high non-radiative recombination coefficient have a higher concentration of a trap (labeled as “e{sub 2}”) with an activation energy of 0.7 eV, which is supposed to be located close to/within the active region; (ii) measurements carried out with varying filling pulse duration suggest that this deep level behaves as a point-defect/dislocation complex. The Arrhenius plot of this deep level is critically compared with the previous literature reports, to identify its physical origin.

36 MATERIALS SCIENCE↗

A spin light emitting diode incorporating ability of electrical helicity switching

Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a computer-driven current source has led us to the observation of helicity switching of circular polarization at the frequency of 1 kHz. Neither external magnetic fields nor optical delay modulators were used. Sending dc-currents to both electrodes with appropriate ratio has resulted in continuous variation of circular polarization between the two opposite helicity, including the null polarization. These results suggest that the tested spin-LED has the feasibility of a monolithic light source whose circular polarization can be switched or continuously tuned all electrically.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 μm were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of the top p-GaN layer and the active region, respectively.

36 MATERIALS SCIENCE↗

Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300 K. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device.

36 MATERIALS SCIENCE↗

Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals

Fabricating photonic crystals (PhCs) on GaN based non-polar light emitting diodes (LEDs) is an effective way to increase light extraction and meanwhile to preserve or improve polarization ratio. In this work, a-plane GaN LEDs with two-dimensional PhCs were demonstrated. With the E // m polarized modes (which mean the optical polarization with the electric field parallel to m-axis) as the target of diffraction, we matched E//m modes to the photonic bands and aligned E//c modes to fall within the photonic band gap. The results show stronger E//m but weaker E//c mode diffractions on both c- and m-axes. At the vertical direction, the polarization ratio is enhanced from 45.8% for the planar device to 52.3% for the LEDs with PhCs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Development of a cost effective surface-patterned transparent conductive coating as top-contact of light emitting diodes

Sol-gel process has been used to form indium zinc oxide films using an optimized combination of zinc to indium concentration in the precursor solutions. Different structures, like one (1D) and two-dimensional (2D) gratings and diffractive optical elements (DOEs) in the form of Fresnel lens are fabricated on the film surface of proposed top metal contact of LED by imprint soft lithography technique. These structures can enhance the LED's light extraction efficiency (LEE) or can shape the output beam pattern, respectively. Several characterizations are done to analyze the material and structural properties of the films. The presence of 1D and 2D gratings as well as DOEs is confirmed from field emission scanning electron and atomic force microscopes analyses. Although, X-ray diffraction shows amorphous nature of the film, but transmission electron microscopy study shows that it is nano crystalline in nature having fine particles (∼8 nm) of hexagonal ZnO. Shrinkage behaviour of gratings as a function of curing temperature is explained by Fourier transform infra-red spectra and thermo gravimetric-differential thermal analysis. The visible transmission and sheet resistance of the sample are found comparable to tin doped indium oxide (ITO). Therefore, the film can compete as low cost substitute of ITO as top metal contact of LEDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dislocation-related trap levels in nitride-based light emitting diodes

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers

InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer

We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emission at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.

36 MATERIALS SCIENCE↗

Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1–x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

36 MATERIALS SCIENCE↗