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Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.
A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors. Each capacitor includes a thin, light-absorptive aluminum electrode which overlies a thin oxide layer and a lightly doped region implanted in an intrinsic silicon substrate.
A hydraulically actuated device is described for applying a test load to a bearing or the like to prove the integrity of its mounting or staking within a bore in a housing such as gear case. To accommodate limited access situations, the device is constructed in a right angle configuration in which a hydraulic cylinder applies axial pressure to a first thrust rod assemly which includes a first thrust rod through a threated spindle driving a linearly translated cam. Cam follower wheel transfers the translation to a second thrust rod assembly which includes a horizontal shaft and a spindle within a cross-arm housing portion and a tubular housing portion. The same second thrust direction applies the bearing loading in either of two directions depending upon the shape of the interface parts. The interface parts can bear on the bearing from either side with respect to the bearing mounting structural part.
Apparatus for adapting a general purpose and effector device to a special purpose and effector is disclosed which includes an adapter bracket assembly which provides a mechanical and electrical interface between the end effector devices. The adapter bracket assembly includes an adapter connector post which interlocks with a diamond shaped gripping channel formed in closed jaws of the general purpose end effector. The angularly intersecting surfaces of the connector post and gripping channel prevent any relative movement there between. Containment webs constrain the outer finger plates of the general purpose jaws to prevent pitch motion. Electrical interface is provided by conical, self aligning electrical connector components carried by respective ones of said end effectors.
A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.
A gallium arsenide photo-responsive device is provided with an intermediate, transparent layer of a refractory metal or alkaline earth metal forming a tenacious bond between a non-hydroscopic oxide layer and a noble metal Schottky barrier layer. The device has a gallium arsenide substrate with a predetermined type conductivity and a gallium arsenide epitaxial layer with the same type conductivity but a lower charge carrier concentration grown on the substrate. The oxide layer is formed to cover the epitaxial layer, and the transparent metal layer followed by the noble metal layer are deposited upon the oxide layer. An interdigitated ohmic contact is then formed upon the noble metal layer.
The integral conservation laws of fluid mechanics are used to assess the drag efficiency of lifting wings, both CTOL and various out-of-plane configurations. The drag-due-to-lift is separated into two major components: (1) the induced drag-due-to-lift that depends on aspect ratio but is relatively independent of Reynolds number; (2) the form drag-due-to-lift that is independent of aspect ratio but dependent on the details of the wing section design, planform and Reynolds number. For each lifting configuration there is an optimal load distribution that yields the minimum value of drag-due-to-lift. For well designed high aspect ratio CTOL wings the two drag components are independent. With modern design technology CTOL wings can be (and usually are) designed with a drag-due-to-lift efficiency close to unity. Wing tip-devices (winglets, feathers, sails, etc.) can improve drag-due-to-lift efficiency by 10 to 15% if they are designed as an integral part of the wing. As add-on devices they can be detrimental. It is estimated that 25% improvements of wing drag-due-to-lift efficiency can be obtained with joined tip configurations and vertically separated lifting elements without considering additional benefits that might be realized by improved structural efficiency. It is strongly recommended that an integrated aerodynamic/structural approach be taken in the design of (or research on) future out-of-plane configurations.
Current science projections for future earth-imaging instruments indicate the need for as many as 25 spectral bands, with bandwidths as narrow as 20 nanometers. The desire for a multiplicity of bands has led researchers to study various spectrally dispersive instrument designs as a means of providing the desired future capability. These instrument designs, however, are costly, complex, and of high technical risk. This paper describes a 'multiband selection device' containing several spectral filters that can be placed at the exit faces of a broadband multiport beam splitter and thereby provide a multiplicity of spectral bands with a high degree of spatial coregistration while utilizing state-of-the-art linear array detectors. Fabrication of the multiband selection device has been successfully accomplished, and the design and test results are described.
NASA's Goddard Space Flight Center (GSFC) has developed a Transportable Applications Executive (TAE) for use in implementing portable applications software that can be shared by different research projects. Since many of the supported disciplines require the interactive display and manipulation of remotely sensed images, a device independent Display Management Subsystem (DMS) was written as a TAE extension. The DMS attempts to abstract and standardize the device dependent functions that are used in the display and manipulation of image data on image analysis terminals. This paper explores the concept of DMS and the interface routines that are available to the applications programmer for use in developing a set of portable image display utility programs.
A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin-film electroluminescent devices and photodetectors are discussed.
Chemical and functional tests yield conservative service-life estimates. Approach to extension of service lives of explosive devices in aircraft escape system developed, supported by testing of representative candidate devices to evaluate quantitatively effects of service, age, and degradation, and to enable responsible, conservative service-life determinations. Five types of explosive components evaluated: rigid and flexible explosive transfer lines; one-way transfers; flexible, linear-shaped charges; and initiation-handles. Extension of service in realistic manner provides both cost savings and increased system reliability.
Clamping device applies protective or antireflective dielectric coating to lenses or other optical elements. Alternative version of device applies thin sheet of dielectric film to ring or stretches it for clamping in holder to form pellicle or beam splitter. Defects avoided by new apparatus, which uniformly stretches dielectric films in radial direction and creates vacuum between them before thermally bonded to optical element.
Hybrid silicon Infrared Charge Coupled Devices (IRCCDs) are evaluated for use as viable astronomical detectors. A Si:In photoconductor array which is bump-bonded to a silicon multiplexer is described. A summary of the device parameters is given.
The objective was to design, fabricate and test an integrated cryogenic test article incorporating both fluid and thermal propellant management subsystems. A 2.2 m (87 in) diameter aluminum test tank was outfitted with multilayer insulation, helium purge system, low-conductive tank supports, thermodynamic vent system, liquid acquisition device and immersed outflow pump. Tests and analysis performed on the start basket liquid acquisition device and studies of the liquid retention characteristics of fine mesh screens are discussed.
A summary report is given of the activities of the device modeling workshop which was held as a part of the Space Photovoltaic Research and Technology Conference at the Lewis Research Center, October 7 to 9, 1986. The purpose of this workshop was to access the status of solar cell device modeling to see if it is meeting present and future needs of the photovoltaic community.
The IEEE AP-S ADCOM is attempting to expand its educational, tutorial and information exchange activities as a further benefit to all members. To this end, ADCOM will be forming specialized workshops on topics of interest to its members. The first such workshop on Characterization and Packaging of MMIC Devices for Array Antennas was conceived. The workshop took place on June 13, 1986 as part of the 1986 International Symposium sponsored by IEEE AP-S and URSI in Philadelphia, PA, June 9-13, 1986. The workshop was formed to foster the interchange of ideas among MMIC device users and to provide a forum to collect and focus information among engineers experienced and interested in the topic. After brief presentations by the panelists and comments from attendees on several subtopics, the group was divided into working committees. Each committee evaluated and made recommendations on one of the subtopics.
Samples of two GEC charge coupled devices with enhanced X-ray performance have been tested. The P8607, fabricated with reduced linear dimensions, gives the lowest detector noise reported for Fe-55 with a CCD. The deep depletion device P8600-HR gives the best combination of energy resolution and quantum efficiency at 6 keV. The energy resolution vs quantum efficiency trade-off curve are discussed.
Forward-bias tunneling is observed in heavily doped p-n junctions of bipolar transistors. A simple phenomenological model suitable to incorporation in device codes is developed. The model identifies as key parameters the space-charge-region (SCR) thickness at zero bias and the reduced doping level at its edges which can both be obtained from CV characteristics. This tunneling mechanism may limit the maximum gain achievable from scaled bipolar devices.