Simulating the neutrino flux from the Spallation Neutron Source for the COHERENT experiment
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Precision measurements are reported of the cross-spectrum of rotationally induced differential position displacements in a pair of colocated 39 m long, high-power Michelson interferometers. One arm of each interferometer is bent 90° near its midpoint to obtain sensitivity to rotations about an axis normal to the plane of the instrument. The instrument achieves quantum-limited sensing of spatially correlated signals in a broad frequency band extending beyond the 3.9-MHz inverse light travel time of the apparatus. For stationary signals with bandwidth Δf>10 kHz, the sensitivity to rotation-induced strain h of classical or exotic origin surpasses CSDδh
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We report epitaxial growth of vanadium diselenide (VSe₂) thin films in the octahedrally coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy, and x-ray photoelectron spectroscopy indicate high-quality thin films. Further studies show that monolayer VSe₂ films on GaAs are not air stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe₂, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for two- and three-dimensional hybrid devices.