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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

High voltage thermally diffused p(+)n solar cells

The possibility of fabricating thermally diffused p(+)n InP solar-cells with high open-circuit voltage without sacrificing the short circuit current is discussed. The p(+)n InP junctions were formed by Cd and Zn diffusion through a 3-5-nm-thick anodic or chemical phosphorus-rich oxide cap layer grown on n:InP:S (with ND-NA = 3.5 x 10 exp 16 and 4.5 x 10 exp 17/cu cm) Czochralski LEC-grown substrates. After thinning the emitter from its initial thickness of 1 to 2.5 micron down to 0.06-0.15 micron, the maximum efficiency was found when the emitter was 0.2 to 0.3 micron thick. Typical AM0, 25 C values of 854-860 mV were achieved for Voc, Jsc values were from 25.9 to 29.1 mA/sq cm using only the P-rich passivating layer left after the thinning process as an antireflection coating.

Faur, M.↗
NASA NTRS1992

A new approach to high-speed flow measurements using constant voltage anemometry

The paper addresses the basic features of conventional instrumentation, such as the constant temperature (CTA) and the constant current (CCA) anemometers, their limitations, and describes a totally new approach to high-speed dynamic measurements using a constant voltage anemometer (CVA). The paper describes the design features of a newly developed CVA and compares preliminary results obtained with CVA and conventional anemometry in low- and high-speed flows.

Mangalam, S. M.↗
NASA NTRS1993

The interaction of high voltage systems with the environments of the Moon and Mars

High voltage systems designed for use on the lunar and Martian surfaces or in orbit will interact with environmental components such as electrically charged dust, low pressure atmospheres, ionospheric plasmas and neutrals, and chemically reactive species. As the Space Exploration Initiative (SEI) advances from the realm of feasibility study to that of conceptual design, guidelines will be required to ensure that these effects are properly accounted for. A first step in providing such guidelines is the prioritization of interactions for each of the space or surface environments that will be encountered. For those issues that are identified as high priority, the state of environmental knowledge, emphasizing essential data, must be determined. This report describes possible means of obtaining such information, including ground tests, modeling and analysis, and flight experiments. The development of computational tools which will enable engineers to simulate and thereby quantify the interactions will be especially considered. Our analysis is drawn from various study and workshop activities undertaken within the last two years.

Hillard, G. Barry↗
NASA NTRS1992

Optically stimulated electron emission - Current-voltage response and spectral sensitivity

A highly reproducible optically stimulated electron emission (OSEE) response steel was achieved in laboratory conditions through suppression of surface photochemistry by replacing air with argon. This permitted the characterization of the OSEE process on D6AC steel as a photodiode. With a low-pressure mercury light source, most of the OSEE current is attributed to photoelectrons released by the 185-nm mercury line with only about 5 percent of the photocurrent associated with the 254-nm line. The forward current-voltage characteristic of the OSEE diode is linear for small fields changing to a square root response at larger fields. These results are all consistent with established theories.

Welch, Christopher S.↗
NASA NTRS1993

TSS-1 - Orbiter current and voltage experiments

Although the deployment distance of the TSS-1 tethered satellite was only about 1 percent of nominal, experiments to study the current collection and vehicle charging effects at low voltages were performed. We present measurements of Orbiter charging resulting from electron beam emission from the Orbiter, currents in the TSS system with and without electron beam emissions, and the effects of Orbiter thrusters on charging and currents. Generally, charging induced by beam emission was limited to a few volts, though during times with low ambient plasma density the Orbiter was charged up to 80 V. Thrusters are seen to enhance Orbiter charging during beam emission, and reduce ion current collection at other times.

Thompson, D. C.↗
NASA NTRS1993

The interaction of high voltage systems with the environments of the moon and Mars

An evaluation is made of the consequences of the interaction of high-voltage spacecraft systems designed for use in orbit or on the lunar and Martian surfaces with such environmental components as electrically charged dust, low pressure atmospheres, ionospheric plasmas and neutral gas species, and chemically reactive species. An account is given of plausible means for obtaining the requisite data and developing priorities for the study of each of the identified interactions. Attention is given to the computational tools whose development is required for the simulation and quantification of risk factors for the various likely interactions.

Hillard, G. B.↗
NASA NTRS1992

Optical fiber voltage sensors for broad temperature ranges

We describe the development of an optical fiber ac voltage sensor for aircraft and spacecraft applications. Among the most difficult specifications to meet for this application is a temperature stability of +/- 1 percent from -65 C to +125 C. This stability requires a careful selection of materials, components, and optical configuration with further compensation using an optical-fiber temperature sensor located near the sensing element. The sensor is a polarimetric design, based on the linear electro-optic effect in bulk Bi4Ge3O12. The temperature sensor is also polarimetric, based on the temperature dependence of the birefringence of bulk SiO2. The temperature sensor output is used to automatically adjust the calibration of the instrument.

Rose, A. H.↗
NASA NTRS1920

Effect of temperature and pressure on the sparking voltage

This report presents the results of an investigation which was to determine how the voltage necessary to produce the proper spark discharge varies with the pressure and temperature of the gas in which the discharge takes place.

Loeb, L B↗
NASA NTRS1994

Construction of temperature compensated constant voltage (VT) curves for super Ni-Cd (tm) cells

Tests to establish current-voltage characteristics at selected temperatures for 9 a-h Super Nickel-Cadmium cells were conducted at Hughes Industrial Electronics Company's Electron Dynamics Division (HIEC/EDD) under sponsorship of NASA/GSFC through their prime spacecraft contractors Fairchild Space (SMEX/SAMPEX) and TRW (TOMSEP). Curves were constructed using techniques established by Webster, Ford, et al, at NASA/GSFC in the late 1960's - early 1970's time period for conventional nickel cadmium cells used on OAO and OSO aircraft. The NASA/GSFC techniques were slightly modified by HIEC/EDD to fit the Super Ni-Cd situation.

Baer, David A.↗
NASA NTRS1994

A new presentation of complex voltage data for Goldstone radar astronomy

A presentation method similar to a vector field display or a data-based grid has been used to visualize complex voltage test data taken over multiple subchannels. Unlike simple plots of all data points on the complex plane, the position of the data in the time series is part of the presentation, providing additional information to aid in fault isolation during readiness testing. The 'phase-magnitude' presentation, as it has come to be called, was designed for the demands of real-time data acquisition and processing with remote monitoring over low bandwidth communication links.

Howard, S. D.↗
NASA NTRS1995

Preliminary chaotic model of snapover on high voltage solar cells

High voltage power systems in space will interact with the space plasma in a variety of ways. One of these, snapover, is characterized by sudden enlargement of the current collection area across normally insulating surfaces generating enhanced electron current collection. Power drain on solar array power systems results from this enhanced current collection. Optical observations of the snapover phenomena in the laboratory indicates a functional relation between glow area and bia potential as a consequence of the fold/cusp bifurcation in chaos theory. Successful characterizations of snapover as a chaotic phenomena may provide a means of snapover prevention and control through chaotic synchronization.

Mackey, Willie R.↗
NASA NTRS1994

Measurement of n-type Dry Thermally Oxidized 6H-SiC Metal-oxide Semiconductor Diodes by Quasistatic and High-Frequency Capacitance Versus Voltage and Capacitance Transient Techniques

Dry-oxidized n-type 6H-SiC metal-oxide-semiconductor capacitors are investigated using quasistatic capacitance versus voltage (C-V), high-frequency C-V, and pulsed high-frequency capacitance transient (C-t) analysis over the temperature range from 297 to 573 K. The quasistatic C - V characteristics presented are the first reported for 6H-SiC MOS capacitors, and exhibit startling nonidealities due to nonequilibrium conditions that arise from the fact that the recombination/generation process in 6H-SiC is extraordinarily slow even at the highest measurement temperature employed. The high-frequency dark C-V characteristics all showed deep depletion with no observable hysteresis. The recovery of the high-frequency capacitance from deep depletion to inversion was used to characterize the minority-carrier generation process as a function of temperature. Zerbst analysis conducted on the resulting C-t transients, which were longer than 1000 s at 573 K, showed a generation lifetime thermal activation energy of 0.49 eV.

Neudeck, P.↗
NASA NTRS1996

An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates

This thesis addresses the acoustoelectric issues concerning the amplification of surface acoustic waves (SAWs) and the reflection of SAWs from slanted reflector gratings on GaAs, with application to a novel acoustic charge transport (ACT) device architecture. First a simple model of the SAWAMP was developed, which was subsequently used to define the epitaxially grown material structure necessary to provide simultaneously high resistance and high electron mobility. In addition, a segmented SAWAMP structure was explored with line widths on the order of an acoustic wavelength. This resulted in the demonstration of SAWAMPS with an order of magnitude less voltage and power requirements than previously reported devices. A two-dimensional model was developed to explain the performance of devices with charge confinement layers less then 0.5 mm, which was experimentally verified. This model was extended to predict a greatly increased gain from the addition of a ZnO overlay. These overlays were experimentally attempted, but no working devices were reported due to process incompatibilities. In addition to the SAWAMP research, the reflection of SAWs from slanted gratings on GaAs was also studied and experimentally determined reflection coefficients for both 45 deg grooves and Al stripes on GaAs have been reported for the first time. The SAWAMp and reflector gratings were combined to investigate the integrated ring oscillator for application to the proposed ACT device and design parameters for this device have been provided.

Hunt, W. D.↗
NASA NTRS1998

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS1995

Preliminary Chaotic Model of Snapover on High Voltage Solar Cells

High voltage power systems in space will interact with the space plasma in a variety of ways. One of these, Snapover, is characterized by a sudden enlargement of the electron current collection area across normally insulating surfaces. A power drain on solar array power systems will results from this enhanced current collection. Optical observations of the snapover phenomena in the laboratory indicates a functional relation between bia potential and surface glow area. This paper shall explore the potential benefits of modeling the relation between current and bia potential as an aspect of bifurcation analysis in chaos theory. Successful characterizations of snapover as a chaotic phenomena may provide a means of snapover prevention and control through chaotic synchronization.

Mackey, Willie R.↗
NASA NTRS1998

Efficient 3D 'Atomistic' Simulation Technique for Studying of Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Decanano MOSFETs

A 3D 'atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 micron MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.

Asenov, Asen↗
NASA NTRS2000

Effect of Oxide Interface Roughness on the Threshold Voltage Fluctuations in Decanano MOSFETs with Ultrathin Gate Oxides

In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.

Asenov, Asen↗