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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Microstructural and preliminary optical and microwave characterization of erbium-doped CaMoO 4 thin films

This work explores erbium-doped calcium molybdate (Er:CaMoO4) thin films grown on silicon and yttria stabilized zirconia (YSZ) substrates, as a potential solid state system for C-band (utilizing the ∼1.5 μm Er 3+ 4f–4f transition) quantum emitters for quantum network applications. Through molecular beam epitaxial growth experiments and electron microscopy, X-ray diffraction, and reflection electron diffraction studies, we identify an incorporation limited deposition regime that enables a 1:1 Ca:Mo ratio in the growing film leading to single phase CaMoO 4 formation that can be in situ doped with Er (typically 2–100 ppm). We further show that growth on silicon substrates is single phase but polycrystalline in morphology, while growth on YSZ substrates leads to high-quality epitaxial single crystalline CaMoO 4 films. We perform preliminary optical and microwave characterization on the suspected Y 1 –Z 1 transition of 2 ppm, 200 nm epitaxial Er:CaMoO 4 annealed thin films and extract an optical inhomogeneous linewidth of 9.1(1) GHz, an optical excited state lifetime of 6.7(2) ms, a spectral diffusion-limited homogeneous linewidth of 6.7(4) MHz, and an EPR linewidth of 1.10(2) GHz.

Masiulionis, Ignas [Univ. of Chicago, IL (United S↗
DOE OSTI2025

Substrate effects on phase formation and interfacial stability in superconducting vanadium silicide thin films

Thin films of vanadium silicide (V-silicide) in the A15 cubic phase (V 3 Si) are promising for superconducting quantum devices due to their high transition temperature and potential compatibility with scalable semiconductor fabrication. However, solid-phase synthesis often yields secondary silicide phases that degrade performance. Here, in this study, we investigate the influence of substrate properties using two silicon-on-insulator architectures: one with a polycrystalline HfO 2 buried layer (group A) and the other with amorphous SiO 2 (group B). Both systems exhibit superconductivity consistent with V 3 Si formation, yet structural analysis reveals mixed-phase films in both cases. Crucially, only group A maintains an atomically sharp and chemically stable interface, a prerequisite for phase purity. Prolonged annealing in group A reduces the unwanted V 5 Si 3 phase but also leads to the emergence of Si-rich VSi 2 , likely due to localized substrate degradation. Preliminary atomic-resolution imaging suggests that HfO 2 crystallinity may promote local phase-selective nucleation. These findings highlight the importance of substrate design in promoting phase control and maintaining interfacial integrity in superconducting silicides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Epitaxial registry and transport properties in V4O7 thin films

We report the growth of V4O7 thin films deposited simultaneously on amorphous SiO2 and crystalline c-cut Al2O3 substrates. x-ray diffraction shows that films grown on SiO2 are polycrystalline with no preferred orientation, while films grown on Al2O3 exhibit a well-defined out-of-plane orientation and an in-plane registry consistent with epitaxial growth. Transmission electron microscopy confirms the crystallographic relationship between the V4O7 film and the Al2O3 substrate. Atomic force microscopy indicates substantially lower surface roughness for films grown on Al2O3 (~6 nm) compared to those grown on SiO2 (~22 nm), and Raman spectroscopy confirms stabilization of the same V4O7 phase on both substrates. Electrical transport measurements reveal a metal–insulator transition near 244 K for both substrates, with thermal hysteresis not exceeding ~1 K. Although the transition temperature remains essentially unchanged, films grown on Al2O3 exhibit higher conductivity over the entire temperature range, exceeding that of films grown on SiO2 by approximately two orders of magnitude at 100 K and by a factor of five at 300 K. These results indicate that the conductivity differences are consistent with variations in microstructural connectivity associated with crystallographic order.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Designing for cooperative grain boundary segregation in multicomponent alloys

Tailoring the nanoscale distribution of chemical species at grain boundaries is a powerful method to dramatically influence the properties of polycrystalline materials. However, classical approaches to the problem have tacitly assumed that only competition is possible between solute species. In this paper, we show that solute elements can cooperate in the way they segregate to grain boundaries: In properly targeted alloys, the different chemical species cooperate to each fill complementary grain boundary sites disfavored by the other. By developing a theoretical “spectral” approach to this problem based on quantum-accurate grain boundary site distributions, we show how grain boundaries can be cooperatively alloyed, whether by depletion or enrichment. We provide machine-learned cosegregation information for over 700 ternary aluminum-based alloys and experimentally validate the concept in one ternary alloy where cosegregation is not expected by prior models but is expected based on the cooperative model.

grain boundaries↗
DOE OSTI2022

Temperature-dependent spectral emittance of bauxite and silica particle beds

Bauxite and silica particles are candidate materials for solar thermal energy storage at high temperatures. The temperature-dependent emittance of packed beds with bauxite and silica particles was measured using a newly upgraded emissometer at wavelengths 2 μm ≤ λ ≤ 16 μm and temperatures up to ~730 K. The room-temperature emittance was obtained from the measured directional-hemispherical reflectance. A fused silica disc was used to test the emissometer by comparing the measured spectral emittance with the calculated emittance from a fitted Lorentz oscillator model. For the polycrystalline silica particles and the fused silica disc, the measured emittance increases with temperature in the mid-infrared region. The underlying mechanism is interpreted as the temperature-dependent damping coefficient in the Lorentz oscillator model. Two types of bauxite particles with different compositions and sizes were investigated. For λ > 10 μm, the measured emittance at elevated temperatures is higher than that at room temperature. In the region 2 μm < λ < 6 μm, the temperature dependence varies for different types of particles. The total emittance of bauxite particle beds was calculated by spectral integration using Planck’s distribution at the prescribed temperature. As a result, the calculated total emittance is between 0.89 and 0.96, but it does not change monotonically with temperature.

42 ENGINEERING↗
DOE OSTI2020

Study of the ferromagnetic quantum phase transition in Ce 3– x Mg x Co 9

The Ce 3-x Mg x Co 9 system evolves from a Pauli paramagnetic ground state for x = 0 to a ferromagnetic ground state for x≈0.80 in single-phase, polycrystalline samples [Lamichhane, V. Taufour, A. Palasyuk, Q. Lin, S.L. Budko, and P.C. Canfield, Ce3-xMgxCo9 : transformation of a Pauli paramagnet into a strong permanent magnet, Phys. Rev. Appl. 9 (2018), p. 024023]. In order to better understand this behaviour, single-crystalline samples of Ce 3-x Mg x Co 9 for x = 0.01, 0.16, 0.24, 0.35, 0.43 and 0.50 were grown using the flux growth technique, and electrical transport and magnetic properties were studied. The T C-x phase diagram we infer shows that the system has a quantum phase transition near x = 0.35, transforming to a ferromagnetic ground state.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Clarifying the definition of ‘transonic’ screw dislocations

We report a number of recent Molecular Dynamics (MD) simulations have demonstrated that screw dislocations in face centred cubic (fcc) metals can achieve stable steady state motion above the lowest shear wave speed (v shear ) which is parallel to their direction of motion (often referred to as transonic motion). This is in direct contrast to classical continuum analyses which predict a divergence in the elastic energy of the host material at a crystal geometry dependent ‘critical’ velocity v crit . Within this work, we first demonstrate through analytic analyses that the elastic energy of the host material diverges at a dislocation velocity (v crit ) which is greater than v shear , i.e. v crit >v shear . We argue that it is this latter derived velocity (v crit ) which separates ‘subsonic’ and ‘supersonic’ regimes of dislocation motion in the analytic solution. In addition to our analyses, we also present a comprehensive suite of MD simulation results of steady state screw dislocation motion for a range of stresses and several cubic metals at both cryogenic and room temperatures. At room temperature, both our independent MD simulations and the earlier works find stable screw dislocation motion only below our derived v crit . Nonetheless, in real-world polycrystalline materials v crit cannot be interpreted as a hard limit for subsonic dislocation motion. In fact, at very low temperatures our MD simulations of Cu at 10 Kelvin confirm a recent claim in the literature that true ‘supersonic’ screw dislocations with dislocation velocities v>v crit are possible at very low temperatures.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Plasma Focused Ion Beam Milling of High-Aspect-Ratio Holes in Diamond

Plasma focused ion beam (PFIB) technology has a great potential for applications requiring rapid micro-machining of high-aspect-ratio features. Here, we use 30-keV Ar, Xe, and O 2 ion beams to study PFIB milling of high-aspect-ratio circular holes in polycrystalline diamond. Our results show that Xe and O 2 ion beams have the highest milling efficiency for low-aspect-ratio and high-aspect-ratio hole milling, respectively. Each ion beam species produces holes with its characteristic shape and wall surface morphology. In conclusion, based on these results, we demonstrate a “hybrid” hole milled in a two-step process with Xe and O 2 ion beams with the geometry and wall morphology attractive for the attachment of a fuel fill tube to the inertial confinement fusion capsule.

ICF targets↗
DOE OSTI2022

Single-beam ion source enhanced growth of transparent conductive thin films

A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a 'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. Furthermore, the ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Combinatorial sputter deposition of ultrathick Au-Bi alloy films

We report gold-bismuth alloys are of interest as catalysts and catalytic sensing systems, electrochemical sensors, superconductors, and hohlraums for magnetically assisted inertial confinement fusion implosions. Radiation-hydrodynamics simulations with the Lasnex code of laser-driven hohlraums predict higher x-ray drive from Au-Bi alloys compared with cases of Au-Ta or pure Au and Bi hohlraums. Here, we use direct current magnetron sputtering in Ar gas, with co-sputtering from two elemental targets, to deposit Au-Bi alloys with Bi content of 9–77 at.% and thicknesses up to ~20 µm. Films are characterized by a combination of x-ray diffraction, Rutherford backscattering, scanning electron microscopy, substrate-curvature-based residual stress, and electronic transport measurements. Experiments are complemented by Monte Carlo simulations of ballistic sputtering and gas phase transport of depositing species and Ar gas atoms. Results show that all films are polycrystalline, with three distinct compositional regimes dominated by Au, Au 2 Bi, and Bi crystallographic phases. A metallic behavior of the temperature dependence of electrical resistivity is observed for all the films. Films with Bi content above ~30 at.% exhibit porosity, which is tolerable to hohlraum x-ray drive based on Lasnex simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The phase diagram of Ti-6Al-4V at high-pressures and high-temperatures

We report results from a series of diamond-anvil-cell synchrotron x-ray diffraction and large-volume-press experiments, and calculations, to investigate the phase diagram of commercial polycrystalline high-strength Ti-6Al-4V alloy in pressure–temperature space. Up to ~30 GPa and 886 K, Ti-6Al-4V is found to be stable in the hexagonal-close-packed, or α phase. The effect of temperature on the volume expansion and compressibility of α–Ti-6Al-4V is modest. The martensitic α → ω (hexagonal) transition occurs at ~30 GPa, with both phases coexisting until at ~38–40 GPa the transition to the ω phase is completed. Between 300 K and 844 K the α → ω transition appears to be independent of temperature. ω–Ti-6Al-4V is stable to ~91 GPa and 844 K, the highest combined pressure and temperature reached in these experiments. Pressure–volume–temperature equations-of-state for the α and ω phases of Ti-6Al-4V are generated and found to be similar to pure Ti. A pronounced hysteresis is observed in the ω–Ti-6Al-4V on decompression, with the hexagonal structure reverting back to the α phase at pressures below ~9 GPa at room temperature, and at a higher pressure at elevated temperatures. Based on our data, we estimate the Ti-6Al-4V α–β–ω triple point to occur at ~900 K and 30 GPa, in good agreement with our calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Formation and dissociation of shear-induced high-energy dislocations: insight from molecular dynamics simulations

Solid-phase processing (SPP) allows one to create complex microstructures, not achievable via thermal processing alone. The resulting structures exhibit a rich palette of defects, both thermal and non-thermal, including defect substructures, such as dislocation networks. It is essential to understand the mechanisms of deformation and defect structure formation to guide SPP towards achieving desired microstructures and material properties. In this study, large-scale molecular dynamics simulations are used to investigate the effects of inhomogeneous strain distribution, that mimics deformation conditions of tribological tests, on the evolution of defects under severe shear deformation in polycrystalline Al. Analysis of defect nucleation and reaction pathways reveals that strong geometric constraints suppress the nucleation and slide of low energy dislocation 1/2$\langle110\rangle${111} but promote the nucleation and slide of high energy dislocations, such as [$1\bar1$0] (001) and 1/2 [$1\bar1$$\bar2$]($1\bar1$1). Further, a rough contact surface, characteristic to tribological tests, imposes an inhomogeneous stress field leading to inhomogeneous defect substructures due to location-dependent activation of slip systems. The results suggest that high-energy dislocations can dominate the evolution of grain structures in highly constrained environments, which should be considered in modeling plastic deformation and grain refinement during SPP.

42 ENGINEERING↗
DOE OSTI2022

Solidification and grain formation in alloys: a 2D application of the grand-potential-based phase-field approach

Solidification is a significant step in the forming of crystalline structures during various manufacturing and material processing techniques. Solidification characteristics and the microstructures formed during the process dictate the properties and performance of the materials. Hence, understanding how the process conditions relate to various microstructure formations is paramount. In this work, a grand-potential-based multi-phase, multi-component, multi-order-parameter phase-field model is used to demonstrate the solidification of alloys in 2D. This model has several key advantages over other multi-phase models such as it decouples the bulk energy from the interfacial energy, removes the constraints for the phase concentration variable, and prevents spurious third-phase formation at the two phase interfaces. Here, the model is implemented in a finite-element-based phase-field modeling code. The role of various modeling parameters in governing the solidification rate and the shape of the solidified structure is evaluated. It is demonstrated that the process conditions such as temperature gradient, thermal diffusion, cooling rate, etc, influence the solidification characteristics by altering the level of undercooling. Furthermore, the capability of the model to capture directional solidification and polycrystalline structure formation exhibiting various grain shapes is illustrated. In both these cases, the process conditions have been related to the growth rate and associated shape of the dendritic structure. As a result, this work serves as a stepping stone towards resolving the larger problem of understanding the process–structure–property–performance correlation in solidified materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Phase-field modeling of stored-energy-driven grain growth with intra-granular variation in dislocation density

Abstract We present a phase-field (PF) model to simulate the microstructure evolution occurring in polycrystalline materials with a variation in the intra-granular dislocation density. The model accounts for two mechanisms that lead to the grain boundary migration: the driving force due to capillarity and that due to the stored energy arising from a spatially varying dislocation density. In addition to the order parameters that distinguish regions occupied by different grains, we introduce dislocation density fields that describe spatial variation of the dislocation density. We assume that the dislocation density decays as a function of the distance the grain boundary has migrated. To demonstrate and parameterize the model, we simulate microstructure evolution in two dimensions, for which the initial microstructure is based on real-time experimental data. Additionally, we applied the model to study the effect of a cyclic heat treatment (CHT) on the microstructure evolution. Specifically, we simulated stored-energy-driven grain growth during three thermal cycles, as well as grain growth without stored energy that serves as a baseline for comparison. We showed that the microstructure evolution proceeded much faster when the stored energy was considered. A non-self-similar evolution was observed in this case, while a nearly self-similar evolution was found when the microstructure evolution is driven solely by capillarity. These results suggest a possible mechanism for the initiation of abnormal grain growth during CHT. Finally, we demonstrate an integrated experimental-computational workflow that utilizes the experimental measurements to inform the PF model and its parameterization, which provides a foundation for the development of future simulation tools capable of quantitative prediction of microstructure evolution during non-isothermal heat treatment.

Materials Science↗
DOE OSTI2026

Decoupling plasma, catalyst, and gaseous mechanisms for non-oxidative methane conversion

Direct non-oxidative methane (CH 4 ) conversion to value-added hydrogen (H 2 ) and C 2 products remains hindered by fundamental catalytic scaling constraints and rapid surface deactivation at elevated temperatures. Plasma-enabled catalysis offers a promising route to overcome the thermodynamic and kinetic barriers of direct non-oxidative methane upgrading at mild conditions, yet control over C–C product selectivity and catalyst stability remains elusive. Here, we establish a unified mechanistic framework including Langmuir–Hinshelwood (L–H) and Langmuir–Rideal (L–R) mechanisms that disentangles the roles of plasma excitation (including vibrationally activated species and radicals), surface temperature (T sur ), and catalyst binding energy in steering CH 4 conversion to H 2 and C 2 hydrocarbons. Through a combination of density functional theory (DFT) informed microkinetic modeling, in situ and ex situ surface characterization, and product quantification under dielectric barrier discharge conditions, we show that vibrationally excited CH 4 lowers activation barriers selectively for dissociative chemisorption, enabling surface activation across a wide range of transition metal catalysts at low thermal energy input. We find that once CH 4 is dissociatively chemisorbed, the branching between C 2 H 2 , C 2 H 4 , and C 2 H 6 is governed by surface properties (carbon binding energy, T sur , etc), regardless of plasma excitation. The DFT informed microkinetic model decouples the effects of molecular activation from surface properties and indentifies operating windows that maximize target yields while suppressing carbon accumulation and subsequent catalytic inactivation. Experiments on polycrystalline Cu/Al 2 O 3 , Ni/Al 2 O 3 , and Pt/Al 2 O 3 validate these predictions, revealing catalyst-dependent branching toward ethane or ethylene and distinct deactivation profiles. We unify these trends into a generalized three-dimensional plasma-thermal-catalytic design space, from which reduced descriptors such as T vib /T sur in the limit of vibrationally excited L–H pathways emerge as predictive metrics. These results enable rational tuning of methane conversion pathways and unlock selective C 2 formation using earth-abundant metals under mild plasma conditions.

catalyst inactivation↗
DOE OSTI2025

Modelling pulsed field magnetization of iron-based bulk superconductors

Abstract Bulk superconductors can be used as super-strength quasi-permanent magnets capable of providing magnetic flux densities considerably superior to conventional permanent magnets. This makes them attractive for several engineering applications that rely on strong magnetic fields like rotating machines, NMR/MRI and magnetic drug delivery systems. Recently, the authors reported a record trapped magnetic field in an iron-based bulk superconductor: 2.83 T was trapped in potassium-doped barium iron arsenide (Ba, K)Fe 2 As 2 (or Ba122) at 5 K. Of particular significance is that the strength and temporal stability of this magnetic field exceeds the requirements of MRI machines, indicating iron-based bulks can now perform at levels demanded by engineering applications. One crucial challenge for their practical use, however, is the need to apply and remove an external magnetic field to magnetize them. Pulsed field magnetization (PFM) shows great promise as a practical method of magnetizing bulks, but the process generates heat in the bulk that is detrimental to its superconducting performance and ability to act as a super-strength magnet. In this paper, coupled electromagnetic–thermal numerical models are used to simulate the PFM of iron-based bulk superconductors. Here we focus on the recent-record-breaking, fine-grain polycrystalline K-doped Ba122 bulks. The impact that the specific J c ( B ) characteristics and thermal properties of the Ba122 material—all of which have been experimentally measured from state-of-the-art samples—have on the magnetic flux dynamics and thermal behaviour during PFM, including the final trapped field, is investigated. We show that because the thermal properties are similar to those of REBa 2 Cu 3 O 7 −δ bulks, a similar response to pulsed fields is obtained. A maximum trapped field of ∼0.81 T (∼43.3% of the maximum trapped field capability under ideal, field-cooling conditions) was simulated at 5 K, with a magnetization efficiency of ∼54%. The modelling framework provides a fast and flexible tool for optimising the practical PFM process at different operating temperatures to maximise the trapped field in state-of-the-art Ba122 bulks and to guide the design of future experiments.

bulk superconductors↗
DOE OSTI2023

Initial study on thermal stability of cold spray tantalum coating irradiated with deuterium for fusion applications

Abstract Removal of neutral hydrogen atoms in the plasma edge reduces the number of charge exchange events and thus, the net energy losses in the plasma, significantly improving performance of fusion devices. Effective control of the residual pressure of hydrogen isotopes (HIs) in the plasma edge may be achieved by utilizing a hydrogen absorbing first wall interface capable of withstanding the harsh fusion environment. In this study, we have investigated tantalum (Ta) coating deposited by cold spray technology on 316L stainless steel substrate as a potential plasma-facing material surface. High fluence low energy deuterium plasma irradiation experiments and subsequent thermal annealing cycles associated with thermal desorption spectrometry (TDS) demonstrated superior structural stability of the Ta coating. TDS experiments revealed the outgassing of deuterium (as measure of its retention) for cold spray Ta coatings to be three times higher than bulk Ta and two orders of magnitude greater than bulk polycrystalline W. X-ray photoelectron spectroscopy revealed evolution of oxidation states upon deuterium irradiation and a partial recovery of the metallic signature of Ta after the thermal treatment at 1100 K.

Physics↗
DOE OSTI2022

Time-of-flight methodologies with large-area diamond detectors for the effectively characterization of tens MeV protons

A novel detector based on a polycrystalline diamond sensor is here employed in an advanced time-of-flight scheme for the characterization of energetic ions accelerated during laser-matter interactions. The optimization of the detector and of the advanced TOF methodology allow to obtain signals characterized by high signal-to-noise ratio and high dynamic range even in the most challenging experimental environments, where the interaction of high-intensity laser pulses with matter leads to effective ion acceleration, but also to the generation of strong Electromagnetic Pulses (EMPs) with intensities up to the MV/m order. These are known to be a serious threat for the fielded diagnostic systems. Here we report on the measurement performed with the PW-class laser system Vega 3 at CLPU (~30 J energy, ~10 21 W/cm 2 intensity, ~30 fs pulses) irradiating solid targets, where both tens of MeV ions and intense EMP fields were generated. The data were analyzed to retrieve a calibrated proton spectrum and in particular we focus on the analysis of the most energetic portion (E > 5.8 MeV) of the spectrum showing a procedure to deal with the intrinsic lower sensitivity of the detector in the mentioned spectral-range.

47 OTHER INSTRUMENTATION↗