Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “oxide interface”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Surface reconstructions and modified surface states in L a 1 – x C a x Mn O 3

Here, the unique functionalities present at surfaces and interfaces of complex oxides have attracted intense research in the past decade. Yet, the fundamental mechanisms underpinning functionality are often elusive, especially in doped manganites, limiting their implementation in functional electronic devices such as memristors and spin valves. Here, we present a local probe-based study on mixed-terminated La 5/8 Ca 3/8 MnO 3 (LCMO) films, and reveal surface metallicity in a thin film grown by pulsed-laser deposition. Using first-principles density-functional theory calculations with Hubbard correction that are more accurate to capture effects of correlation in these systems, we show that for Ca-segregated (001) LCMO surfaces the (La,Ca)O-site terminated surfaces are half metallic due to delocalized Mn- d states populating the Fermi level, whereas the MnO 2 -site terminated surfaces exhibit a half-metallic or insulating character depending on the type of surface reconstruction. Computations not only explain the current measurements, but also explain other recent surface measurements on LCMO thin films, leading to a coherent picture of how the crucial link between surface segregation and Jahn-Teller couplings in the manganese oxides tune the surface electronic/magnetic structure, thereby pointing to the fine control of transport and magnetism at the conductive oxide surface independent of the bulk.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Distinct behavior of localized and delocalized carriers in anatase TiO 2 (001) during reaction with O 2

Two-dimensional (2D) metallic states induced by oxygen vacancies $(V_{O}\text{s})$ at oxide surfaces and interfaces provide opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. As such, we used angle resolved photoelectron spectroscopy combined with density-functional theory (DFT) to study the reactivity of $V_O$-induced states at the (001) surface of anatase TiO 2 , where both 2D metallic and deeper lying in-gap states (IGs) are observed. The 2D and IG states exhibit remarkably different evolutions when the surface is exposed to molecular O 2 : while IGs are almost completely quenched, the metallic states are only weakly affected. DFT calculations indeed show that the IGs originate from surface $V_{O}\text{s}$ and remain localized at the surface, where they can promptly react with O 2 . In contrast, the metallic states originate from subsurface vacancies whose migration to the surface for recombination with O 2 is kinetically hindered on anatase TiO 2 (001), thus making them much less sensitive to oxygen dosing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Morphological Evolution and Dealloying During Corrosion of Ni20Cr (wt.%) in Molten FLiNaK Salts

The dealloying corrosion behavior of the FCC Ni20Cr (wt%) in molten LiF-NaF-KF (FLiNaK) salts at 600 °C under varying applied potentials was investigated. Using in-operando electrochemical techniques and a multi-modal suite of characterization methods, we connect electrochemical potential, thermodynamic stability, and electro-dissolution kinetics to the corrosion morphologies. Notably, under certain potential regimes, a micron-scale bicontinuous structure, characterized by a network of interconnected pores and ligaments riched with the composition of the more noble (MN) element, becomes prominent. At other potentials both MN and less noble (LN) elements dealloy but at different rates. The dealloying process consists of lattice and grain boundary diffusion of Cr to the metal/salt interface, interphase Cr oxidation, accompanied by surface diffusion of Ni to form interconnected ligaments. At higher potentials, the bicontinuous porous structure undergoes further surface coarsening. Concurrently, Cr(II), Cr(III), and Ni(II) begin to dissolve, with the dissolution of Ni occurring at a significantly slower rate. When solid-state transport of Cr is exceeded by the interfacial rates, dealloying depths are limited.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Novel Approach to Front Contact Passivation for CdTe Photovoltaics

The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

14 SOLAR ENERGY↗
DOE OSTI2025

Analysis of RF Surface Loss in a Planar 2D Qubit

The Josephson junction and shunt capacitor form a transmon qubit, which is the cornerstone of modern quantum computing platforms. For reliable quantum computing, it is important how long a qubit can remain in a superposition of quantum states, which is determined by the coherence time (T1). The coherence time of a qubit effectively sets the "lifetime" of usable quantum information, determining how long quantum computations can be performed before errors occur and information is lost. There are several sources of decoherence in transmon qubits, but the predominant one is generally considered to be dielectric losses in the natural oxide layer formed on the surface of the superconductor. In this paper, we present a numerical study of microwave surface losses in planar superconducting antennas of different transmon qubit designs. An asymptotic method for estimating the energy participation ratio in ultrathin films of nanometer scales is proposed, and estimates are given for the limits of achievable minimum RF losses depending on the electrical properties of the surface oxide and the interface of the qubit with the substrate material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1978

Dual membrane hollow fiber fuel cell and method of operating same

A gaseous fuel cell is described which includes a pair of electrodes formed by open-ended, ion-exchange hollow fibers, each having a layer of metal catalyst deposited on the inner surface and large surface area current collectors such as braided metal mesh in contact with the metal catalyst layer. A fuel cell results when the electrodes are immersed in electrolytes and electrically connected. As hydrogen and oxygen flow through the bore of the fibers, oxidation and reduction reactions develop an electrical potential. Since the hollow fiber configuration provides large electrode area per unit volume and intimate contact between fuel and oxidizer at the interface, and due to the low internal resistance of the electrolyte, high power densities can be obtained.

Ingham, J. D.↗
NASA NTRS1981

Treatment of CELSS and PCELSS waste to produce nutrients for plant growth

The research program entitled 'Development of a Prototype Experiment for Treating CELSS (Controlled Ecological Life Support Systems) and PCELSS (Partially Controlled Ecological Life Support Systems) Wastes to Produce Nutrients for Plant Growth' consists of two phases: (1) the development of the neccessary facilities, chemical methodologies and models for meaningful experimentation, and (2) the application of what methods and devices are developed to the interfacing of waste oxidation with plant growth. Homogeneous samples of freeze-dried human feces and urine have been prepared to ensure comparability of test results between CELSS waste treatment research groups. A model of PCELSS food processing wastes has been developed, and an automated gas chromatographic system to analyze oxidizer effluents was designed and brought to operational status. Attention is given the component configuration of the wet oxidation system used by the studies.

Modell, M.↗
NASA NTRS1986

Behavior of inversion layers in 3C silicon carbide

A study on the field-induced surface-charge region in 3C silicon carbide (SiC) using 1 MHz capacitance-voltage (C-V) measurements at room temperature is here reported. A double column mercury probe was used on oxidized SiC substrates to form metal-oxide-semiconductor (MOS) structures. These structures were characterized in terms of the substrate doping profile, effective fixed oxide charge, and interface trap density. A distinctive feature of the MOS C-V curves from accumulation to inversion is that after going into deep depletion the capacitance rises to its equilibrium inversion level during the voltage sweep. Capacitance transient measurements indicate that the minority-carrier generation occurs at the SiO2/SiC interface.

Avila, R. E.↗
NASA NTRS1988

Scanning tunneling microscopy characterization of the geometric and electronic structure of hydrogen-terminated silicon surfaces

Scanning tunneling microscopy (STM) methods are used to characterize hydrogen-terminated Si surfaces prepared by a novel method. The surface preparation method is used to expose the Si-SiO2 interface. STM images directly reveal the topographic structure of the Si-SiO2 interface. The dependence of interface topography on oxide preparation conditions observed by STM is compared to the results of conventional surface characterization methods. Also, the electronic structure of the hydrogen-terminated surface is studied by STM spectroscopy. The near-ideal electronic structure of this surface enables direct tunnel spectroscopy measurements of Schottky barrier phenomena. In addition, this method enables probing of semiconductor subsurface properties by STM.

Kaiser, W. J.↗
NASA NTRS2004

Mission Cycle Life Prediction for C/SiC Composites

The residual strength and life of C/SiC is dominated by carbon interface and fiber oxidation if thermal and mechanical stresses combine with thermal expansion mismatch in a manner such that seal coat and matrix cracks are open to allow oxygen ingress. Under these circumstances life can be predicted by simple oxidation based models based on reaction controlled kinetics at low temperature and gas phase diffusion controlled kinetics at high temperature. Key life governing variables in these models include temperature, applied stress, initial strength, oxygen partial pressure and total pressure. In this paper these models are described and extended to mission cycle life prediction.

Levine, Stanley R.↗
DOE OSTI2015

Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures

The influence of the reductive character of the metals used for the gate electrode on O migration in gate stacks and following reductive or oxidative reactions at an interface between a high permittivity (high-k) insulating layer and Ge or Si was investigated. The magnitude of the increase or decrease of Ge or Si oxides in the gate stacks caused by the metal layer deposition can be systematically correlated with the oxygen chemical potential (μ{sub O}) of gate metals for both Ge and Si systems. However, the influence of the gate metals on oxidative/reductive reactions of a semiconductor element is more significant for the Ge gate stacks than the Si system. Detailed investigations of Ge oxide as a function of depth were used to determine that the strong μ{sub O} dependence of the increase or decrease in the Ge oxide is because of the high diffusivity of Ge into the high-k oxide. In particular, migration of Ge into the high-k oxide occurs concurrently with O migration towards the reductive metal layer, and the strong reductive character of the metal significantly influences the decrease in the amount of Ge oxide. These results indicate the importance of the selection of gate metals based on μ{sub O} for controlling high-k/Ge interfacial structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Surface Chemistry of Liquid Bismuth under Oxygen and Water Vapor Studied by Ambient Pressure X-ray Photoelectron Spectroscopy

Bismuth (Bi) has a fairly low melting point of 544 K making it practical as a liquid metal medium in a number of applications. Under ambient atmospheric conditions the surface of solid Bi oxidizes. While the solid Bi interface has been fairly well characterized with surface science studies upon exposure to oxygen, to date little is known about the molecular level reactivity of the liquid interface. Here, using ambient pressure X-ray photoelectron spectroscopy the liquid-gas interfacial chemistry of Bi was examined upon exposure to oxygen gas and water vapor at 550 K up to a maximum pressure of 0.5 Torr. Water vapor remained unreactive towards the liquid interface over the entire pressure range. Oxygen remined unreactive up to 10 –4 Torr, whereas above this pressure oxidation was observed forming Bi 2 O 3 . The oxidation exposure onset was > 5 x 10 5 Langmuirs, significantly higher than what is required for solid Bi interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Imaging microscopic electronic contrasts at the interface of single-layer WS 2 with oxide and boron nitride substrates

The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with the substrate and electrode materials. In this work, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS 2 stacked on hBN, SiO 2 , and TiO 2 substrates. Furthermore, using work function and X-ray absorption imaging, we single-out clean microscopic regions of each interface type and collect the valence band dispersion. We infer the alignments of the electronic bandgaps and electron affinities from the measured valence band offsets of WS2 and the three substrate materials using a simple electron affinity rule and discuss the implications for vertical band structure engineering using mixed three- and two-dimensional materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Self-welding of Inconel 617 under high-pressure-high-temperature conditions for nuclear reactors

In response to continuously declining availability of fossil fuels, nuclear power has become an important alternative source of power generation. Growing application of nuclear power has relieved the shortage of electricity. However, it is also accompanied with new drawbacks, such as radioactive waste, and potential catastrophic consequences in case of major accidents. For nuclear power plants, severe accidents mostly originate from the reactor, making the reliability of the reactor of paramount importance to the overall safety of a nuclear power plant. Massive heat generation through nuclear fission/fusion and heat exchange render the whole reactor operating at extremely high temperatures (i.e., 900–1000 °C), which, in conjunction with large load from subsystems/ components made of special heavy alloys, renders the reactor under the risk of self-welding, a phenomenon that could lead to strong bonding between components and paralyze the operability of the nuclear reactor. This paper investigates the self-welding behavior of Inconel 617, a primary candidate nickel alloy for key components of the next generation gas cooled nuclear plant, inside a controlled atmospheric furnace with preset static load, simulating the high-pressure high-temperature conditions inside nuclear reactors. Therefore, test results show that Inconel 617 experiences self-welding through common oxide zone at the interface, and it has remarkable bonding strength, requiring 4114 N (57.15 MPa) and 4338 N (60.25 MPa) to break apart a mated sample pair, under an apparent contact pressure of 0.341 MPa after 50-h aging, in helium and air atmospheres, respectively. The higher oxygen presence in air results in slightly stronger oxide bond at the interface, compared to helium, and the bond strength increases with dwell time.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Redox-stable symmetrical solid oxide fuel cells with exceptionally high performance enabled by electrode/electrolyte diffuse interface

Here, in this study, we report a high performance and redox-stable symmetrical solid oxide fuel cell (SOFC) based on (Ba 0.5 Sr 0.5 ) (Mo 0.1 Fe 0.9 )O 3-δ (BSMF) electrode and La 0.8 Sr 0.2 Ga 0.8 Mg 0.2 O 3-δ (LSGM) electrolyte. BSMF is able to operate both as anode and cathode. Excellent electrocatalytic activity has been achieved on BSMF towards hydrogen oxidation and oxygen reduction. Due to its closely matched lattice parameter to LSGM electrolyte, a unique diffuse interface is formed between BSMF and LSGM. Compared to a clean interface, e.g. BSMF/gadolinium doped ceria interface, this diffuse interface promotes the performance of BSMF electrode 1–1.8 times in 600–800 °C. Polarization resistance of the BSMF/LSGM specimen is as low as 0.047 and 0.007 Ωcm 2 in humidified H 2 and in air at 800 °C, respectively. On the BSMF/LSGM/BSMF symmetrical cell, a maximum power density of 2.28 W/cm 2 is achieved at 800 °C, the highest among with redox-stable ceramic electrodes to the best of our knowledge. Redox stability of this cell is confirmed. The role of anode and cathode is reversed back and forth in different operation modes. No apparent degradation is observed through 4 cycles within a 110 h operation period. These findings demonstrate that (Ba 0.5 Sr 0.5 ) (M o0.1 Fe 0.9 )O 3-δ coupled with LSGM electrolyte is an excellent choice to build a high performance, redox-stable SOFC.

25 ENERGY STORAGE↗
DOE OSTI2021

In 2 O 3 -Ga 2 O 3 Alloys as Potential Buffer Layers in CdTe Thin-Film Solar Cells

The efficiency of state-of-the-art Cd Te solar cells remains limited by the relatively low open-circuit voltage (V OC ). Improving the front interface is key towards realizing a higher V OC after achieving the necessary bulk carrier density and lifetime. Recent efforts in identifying buffer layers beyond Cd S have focused on Mg x Zn 1-x O, which offers tunability of the band offsets, but often suffers from high interfacial defect densities. Ga 2 O 3 -based buffer layers demonstrate tremendous improvements in interfacial defect passivation in crystalline silicon and dye-sensitized solar cells, leading to record high V OC , yet remain largely unexplored in Cd Te-based devices. Here, we perform hybrid density-functional-theory calculations to investigate pure Ga 2 O 3 and InGaO 3 alloys as a window layer in Cd Te photovoltaics. We report calculated band offsets for several pairs of solid-solid interfaces comprising transparent conducting oxide (TCO) and Cd Te heterojunctions. The results support a large conduction band offset spike of 0.67 eV for the Cd Te/Ga 2 O 3 (100) interface, while the offset is reduced to 0.18 eV for the InGaO 3 alloy and matches closely with the preferred optimum value of 0.2 eV. Device-level modeling tests of Cd Te solar cells integrating our results indicate that the highest efficiency is achieved with InGaO 3 acting both as a buffer layer and TCO. Finally, our results suggest that alloys of In 2 O 3 and Ga 2 O 3 may be attractive alternatives to Mg x Zn 1-x O for tailoring optimal conduction-band offsets of the buffer and TCO layers in high-efficiency Cd Te thin-film solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Tuning Exciton Emission via Ferroelectric Polarization at a Heterogeneous Interface between a Monolayer Transition Metal Dichalcogenide and a Perovskite Oxide Membrane

Here we demonstrate the integration of a thin BaTiO 3 (BTO) membrane with monolayer MoSe 2 in a dual gate device that enables in-situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D) transition metal dichalcogenides (TMDs) offer remarkable adaptability, their hybrid integration with other families of functional materials beyond the realm of 2D materials has been challenging. Released functional oxide membranes offer a solution for 2D/3D integration via stacking. 2D TMD excitons can serve as a local probe of the ferroelectric polarization in BTO at a heterogeneous interface. Using photoluminescence (PL) of MoSe 2 excitons to optically readout the doping level, we find that the relative population of charge carriers in MoSe 2 depends sensitively on the ferroelectric polarization. This finding points to a promising avenue for future-generations versatile sensing devices with high sensitivity, fast read-out, and diverse applicability for advanced signal processing.

42 ENGINEERING↗
DOE OSTI2016

Strontium ruthenate–anatase titanium dioxide heterojunctions from first-principles: Electronic structure, spin, and interface dipoles

The epitaxial integration of functional oxides with wide band gap semiconductors offers the possibility of new material systems for electronics and energy conversion applications. We use first principles to consider an epitaxial interface between the correlated metal oxide SrRuO{sub 3} and the wide band gap semiconductor TiO{sub 2}, and assess energy level alignment, interfacial chemistry, and interfacial dipole formation. Due to the ferromagnetic, half-metallic character of SrRuO{sub 3}, according to which only one spin is present at the Fermi level, we demonstrate the existence of a spin dependent band alignment across the interface. For two different terminations of SrRuO{sub 3}, the interface is found to be rectifying with a Schottky barrier of ≈1.3–1.6 eV, in good agreement with experiment. In the minority spin, SrRuO{sub 3} exhibits a Schottky barrier alignment with TiO{sub 2} and our calculated Schottky barrier height is in excellent agreement with previous experimental measurements. For majority spin carriers, we find that SrRuO{sub 3} recovers its exchange splitting gap and bulk-like properties within a few monolayers of the interface. These results demonstrate a possible approach to achieve spin-dependent transport across a heteroepitaxial interface between a functional oxide material and a conventional wide band gap semiconductor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗