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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Mechanistic understanding of speciated oxide growth in high entropy alloys

Abstract Complex multi-element alloys are gaining prominence for structural applications, supplementing steels, and superalloys. Understanding the impact of each element on alloy surfaces due to oxidation is vital in maintaining material integrity. This study investigates oxidation mechanisms in these alloys using a model five-element equiatomic CoCrFeNiMn alloy, in a controlled oxygen environment. The oxidation-induced surface changes correlate with each element’s interactive tendencies with the environment, guided by thermodynamics. Initial oxidation stages follow atomic size and redox potential, with the latter becoming dominant over time, causing composition inversion. The study employs in-situ atom probe tomography, transmission electron microscopy, and X-ray absorption near-edge structure techniques to elucidate the oxidation process and surface oxide structure evolution. Our findings deconvolute the mechanism for compositional and structural changes in the oxide film and will pave the way for a predictive design of complex alloys with improved resistance to oxidation under extreme conditions.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Oxidation-chlorination of binary Ni-Cr alloys in flowing Ar-O2-Cl2 gas mixtures at 1200 K

Nickel-chromium alloys are resistant to oxidation because of the selective oxidation of chromium to form a protective Cr2O3 scale. In chlorine-containing environments, volatile corrosion products can also be formed. The mixed oxidation-chlorination of Ni-4.5Cr, Ni-13.8Cr, and Ni-26.5Cr (by weight) alloys in Ar-O2-Cl2 gas mixtures is investigated using thermogravimetric analysis and atmospheric-pressure-sampling mass spectrometry, followed by examination of the corrosion products using scanning electron microscopy and X-ray diffraction analysis. The overall kinetics of the corrosion are affected by the relative amounts of oxides and chlorides formed and the composition of the oxide corrosion products.

Mcnallan, M. J.↗
NASA NTRS1982

A study of the structure and properties of certain aluminides

Experimental data are presented on the structure and heat resistance of the aluminides ZrAl3, Fe2Al5 and Co2Al9, considering sp. wt., type of combination, and resistance to oxidation at high temperatures. Co2Al9 possesses a relatively high heat of formation, attributed to its high heat resistance characteristics.

Drits, M. Y.↗
NASA NTRS1992

Fastener For Hot, Oxidizing Environments

Threaded halves of metallic collar fit around tapered shank of body of fastener. Retaining ring holds collar on body. Ceramic coat gives fastener its resistance to oxidation. Assembled and disassembled quickly from outside.

Dunn, Thomas J.↗
NASA NTRS1983

Overlay coating degradation by simultaneous oxidation and coating/substrate interdiffusion

Degradation of NiCrAlZr overlay coatings on various NiCrAl substrates was examined after cyclic oxidation. Concentration/distance profiles were measured in the coating and substrate after various oxidation exposures at 1150 C. For each stubstrate, the Al content in the coating decreased rapidly. The concentration/distance profiles, and particularly that for Al, reflected the oxide spalling resistance of each coated substrate. A numerical model was developed to simulate diffusion associated with overlay-coating degradation by oxidation and coating/substrate interdiffusion. Input to the numerical model consisted of the Cr and Al content of the coating and substrate, ternary diffusivities, and various oxide spalling parameters. The model predicts the Cr and Al concentrations in the coating and substrate after any number of oxidation/thermal cycles. The numerical model also predicts coating failure based on the ability of the coating to supply sufficient Al to the oxide scale. The validity of the model was confirmed by comparison of the predicted and measured concentration/distance profiles. The model was subsequently used to identify the most critical system parameters affecting coating life.

Nesbitt, J. A.↗
DOE OSTI2022

Scalable Al 2 O 3 –TiO 2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Abstract Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al 2 O 3 –TiO 2 ‐based valence‐change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al 2 O 3 –TiO 2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence‐change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)‐technology‐compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High-Quality Factor Microwave Resonators using Rhenium

Coplanar waveguide resonators are a perfect tool to evaluate the losses induced by defects and interfaces in superconducting devices. Even if niobium is the most used superconductor for resonators and qubits, its native oxide at the metal-air (MA) interface limits the device results. Tantalum has recently significantly improved qubit performances due to a thinner and less disordered oxide layer compared to Nb. To further improve the MA interface, we used rhenium, a superconducting material with 1.7 K critical temperature resistant to oxidation: it forms an oxide layer thinner than 1 nm. In this study, we will present a thorough investigation of rhenium CPW resonator measurements with internal quality factors at the single photon level exceeding 2 million. The devices have been fabricated on a sapphire substrate while the processing parameters have been varying and optimized. The measurements have been performed as a function of power and temperature to disentangle different sources of losses, such as two-level systems (TLS) and quasi-particles. A peculiar TLS temperature dependence has been measured and analyzed. In this work, we also vary the participation ratio of the devices to extract the losses introduced by the involved interfaces with higher fidelity and precision. We carried on a deep material characterization effort to link the results to the differences in the fabrication steps, and we will present material characterization measurements performed via AFM, ToF-SIMS, XPS, and TEM.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

The stability of Cl-, Br-, and I-passivated Si(100)-(2 × 1) in ambient environments for atomically-precise pattern preservation

Abstract Atomic precision advanced manufacturing (APAM) leverages the highly reactive nature of Si dangling bonds relative to H- or Cl-passivated Si to selectively adsorb precursor molecules into lithographically defined areas with sub-nanometer resolution. Due to the high reactivity of dangling bonds, this process is confined to ultra-high vacuum (UHV) environments, which currently limits its commercialization and broad-based appeal. In this work, we explore the use of halogen adatoms to preserve APAM-derived lithographic patterns outside of UHV to enable facile transfer into real-world commercial processes. Specifically, we examine the stability of H-, Cl-, Br-, and I-passivated Si(100) in inert N 2 and ambient environments. Characterization with scanning tunneling microscopy and x-ray photoelectron spectroscopy (XPS) confirmed that each of the fully passivated surfaces were resistant to oxidation in 1 atm of N 2 for up to 44 h. Varying levels of surface degradation and contamination were observed upon exposure to the laboratory ambient environment. Characterization by ex situ XPS after ambient exposures ranging from 15 min to 8 h indicated the Br– and I–passivated Si surfaces were highly resistant to degradation, while Cl–passivated Si showed signs of oxidation within minutes of ambient exposure. As a proof-of-principle demonstration of pattern preservation, a H–passivated Si sample patterned and passivated with independent Cl, Br, I, and bare Si regions was shown to maintain its integrity in all but the bare Si region post-exposure to an N 2 environment. The successful demonstration of the preservation of APAM patterns outside of UHV environments opens new possibilities for transporting atomically-precise devices outside of UHV for integrating with non-UHV processes, such as other chemistries and commercial semiconductor device processes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2003

Oxide Protective Coats for Ir/Re Rocket Combustion Chambers

An improved material system has been developed for rocket engine combustion chambers for burning oxygen/ hydrogen mixtures or novel monopropellants, which are highly oxidizing at operating temperatures. The baseline for developing the improved material system is a prior iridium/rhenium system for chambers burning nitrogen tetroxide/monomethyl hydrazine mixtures, which are less oxidizing. The baseline combustion chamber comprises an outer layer of rhenium that provides structural support, plus an inner layer of iridium that acts as a barrier to oxidation of the rhenium. In the improved material system, the layer of iridium is thin and is coated with a thermal fatigue-resistant refractory oxide (specifically, hafnium oxide) that serves partly as a thermal barrier to decrease the temperature and thus the rate of oxidation of the rhenium. The oxide layer also acts as a barrier against the transport of oxidizing species to the surface of the iridium. Tests in which various oxygen/hydrogen mixtures were burned in iridium/rhenium combustion chambers lined with hafnium oxide showed that the operational lifetimes of combustion chambers of the improved material system are an order of magnitude greater than those of the baseline combustion chambers.

Fortini, Arthur↗
NASA NTRS1991

Effect of sinter fracture and ohmic resistance on capacity retention in the nickel oxide electrode

The lifetime of batteries which utilize the nickel oxide electrode is often limited because this electrode loses a significant portion of its capacity as it is cycled. It is asserted that this capacity loss may often be attributed to cracking or separation of the conductive nickel sinter in the electrode, which forces electronic current to pass through the poorly conducting hydrated oxide and thus imposes a significant ohmic resistance. The model indicates that the oxide develops a nearly insulating layer which prevents complete discharge in the cycled electrode at usable rates. The capacity retention can be improved by reducing the cyclic stresses or strengthening the current collecting structure, redistributing it to provide a shorter current path through the solid phase, or by increasing the conductivity of the oxide to delay the formation of an insulating layer.

Lanzi, Oscar↗
DOE OSTI2021

Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis

Resistance switching in metal–insulator–metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. Here, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices. Using a modified atomic layer deposition based technique known as sequential infiltration synthesis, which was developed originally for improving polymer properties such as enhanced etch resistance of electron-beam resists and for the creation of films for filtration and oleophilic applications, we are able to create ~15 nm thick ultraporous (pore size ~5 nm) oxide dielectrics with up to 73% porosity as the medium for filament formation. We show, using the Ag/Al 2 O 3 system, that the ultraporous films result in ultrahigh on/off ratio (>10 9 ) at ultralow switching voltages (~±600 mV) that are 10× smaller than those for the bulk case. In addition, the devices demonstrate fast switching, pulsed endurance up to 1 million cycles. and high temperature (125 °C) retention up to 10 4 s, making this approach highly promising for large-scale neuromorphic and memory applications. Additionally, this synthesis methodology provides a compatible, inexpensive route that is scalable and compatible with existing semiconductor nanofabrication methods and materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Preliminary results from Low Pressure Steam Oxidation Testing of ALD ZrN and ZrO2 Coating Deposited over UCN Fuel Kernels

Steam oxidation testing was used to investigate as-developed 100 nm ALD ZrN and 1000 nm ZrO 2 coatings deposited over UC1-xNx fuel kernels. The results of these tests were compared against oxidation of uncoated kernels. This work was performed to support development of coatings which both provide high temperature Zr metal diffusion barrier and also provide resistance against oxidation, especially against high temperature steam and/or air. This work was performed in collaboration with Oak Ridge National Laboratory (ORNL), using ORNL-provided samples. The oxidation tests yielded valuable information, including relative differences in performance of different coating materials and coating thicknesses.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2026

Ambient Aging of Epitaxial and Polycrystalline Rhenium Thin Films

Extending the lifetime of superconducting qubits requires materials that are resistant to surface oxide formation. Rhenium has emerged as one such promising material. Because grain boundaries can promote material degradation, this project compares epitaxial (single-crystal, no grain boundaries) and polycrystalline (many grain boundaries) rhenium thin films after three years of ambient environmental exposure. Epitaxial rhenium remained free of undesired particles, while polycrystalline rhenium developed higher-oxide surface particles. Epitaxial rhenium demonstrated greater resistance to aging and oxidation, making it a more promising candidate for superconducting qubits. Surface characterization using scanning electron microscopy, energy dispersive x-ray spectroscopy, and x-ray photoelectron spectroscopy revealed localized oxygen and nitrogen enrichment together with a Re⁷⁺ oxidation state in the polycrystalline surface particles, consistent with the proposed formation of ammonium perrhenate. Ongoing cleaning and XPS depth profiling will further determine the identity and origin of the surface crystallites.

Wiacek, Wiktoria [William Rainey Harper Coll.]↗
DOE OSTI2023

Experimental study on kinetic oxidation of graphite IG-110 by steam

Graphite is proposed for use in High-temperature Gas-cooled Reactors (HTGRs) as the fuel matrix, neutron moderator/reflector, and core structural material. One important property of nuclear grade graphite is their resistance to oxidation in high-temperature environment. Extensive investigation has been performed in the literature for graphite oxidation by air. However, available experimental data are still limited for graphite oxidation by steam under conditions comparable to a postulated steam ingress accident in HTGRs. In this study, the oxidation rate of graphite IG-110 by steam was measured at temperatures from 850 to 1100 °C with the steam partial pressure varying from 0.5 to 20.0 kPa and the hydrogen partial pressure varying from 0 to 2.0 kPa. Further analysis confirms the oxidation process in this present study is dominated by the chemical kinetics, which lends credit to the data for being used to develop numerical models. It was observed that the increase of the kinetic oxidation rate with the steam partial pressure tends to become less apparent if the steam partial pressure keeps increasing. In addition, it was found that the partitioning of hydrogen inhibits the graphite-steam reaction process even with the steam partial pressure up to 20.0 kPa. However, this inhibiting effect starts to become saturated when the hydrogen partial pressure exceeds 1.0 kPa. The oxidation rates were fitted to the conventional Langmuir-Hinshelwood (LH) and Boltzmann-enhanced Langmuir-Hinshelwood (BLH) models by a multivariable optimization algorithm. The BLH model exhibits a better accuracy than the LH model within the specified experimental conditions. The predicted oxidation rate using the BLH model shows a mean relative difference of about 24% with the maximum difference of about 55% when compared with our experimental data.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
NASA NTRS2016

Reliability Characterization of TaOx-Based Commercial ReRAM in Combination with Radiation

We present reliability data combined with total dose gamma radiation for one of the first commercially available resistive memory devices. These Tantalum Oxide (TaOX)-based resistive memory chips demonstrate operation in dynamic program and erase testing up to ~130 Krad(Si) of 60Co gamma dose. In static and unbiased conditions, the stored data in the memory cells were able to withstand up to 50Mrad(Si) of exposure. The access circuitry, though, seemed less robust to gamma radiation and was able to operate only up to a total dose of 3Mrad(Si). Post exposure reliability as indicated by endurance, cycling error rate, and data retention tests showed no detectable impact from the combination with prior gamma irradiation. Overall, the total dose radiation tolerance of the commercial TaOx-based resistive memory chip appears to be higher than flash memory chips and in agreement with prior tests conducted with single cell resistive memories.

total ionizing dose↗
DOE OSTI2023

Engineering of Grain Boundaries in CeO 2 Enabling Tailorable Resistive Switching Properties

Abstract Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain boundaries. In this work, the impact of engineering large numbers of grain boundaries on resistive switching mechanisms and performances is investigated. Three different grain morphologies, that is, “random network,” “columnar scaffold,” and “island‐like,” are realized in CeO 2 thin films. The devices with the three grain morphologies demonstrate vastly different resistive switching behaviors. The best overall resistive switching performance is shown in the devices with “columnar scaffold” morphology, where the vertical grain boundaries extending through the film facilitate the generation of oxygen vacancies as well as their migration under external bias. The observation of both interfacial and filamentary switching modes only in the devices with a “columnar scaffold” morphology further confirms the contribution from grain boundaries. In contrast, the “random network” or “island‐like” structures result in excessive or insufficient oxygen vacancy concentration migration paths. The research provides design guidelines for grain boundary engineering of oxide‐based resistive switching materials to tune the resistive switching performances for memory and neuromorphic computing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Amine Oxidation Catalyzed by NO 2

Amine oxidation is a major risk in the deployment of amine scrubbing for CO2 capture from post-combustion flue gas. Oxidation probably occurs by dissolved oxygen at elevated temperature, Fe(III)/Fe(II) shuttling between the absorber and the stripper, and by NO2 in the absorber. Amine selection, dissolved oxygen removal, and solvent reclaiming mitigate oxidation due to dissolved oxygen and iron shuttle mechanism, but not by NO2. This work examines piperazine (PZ) oxidation by NO2 in a bench-scale high gas flow reactor (HGF). PZ is an effective second-generation solvent with high CO2 capacity, fast capture rate, good thermal stability, and good resistance to oxidation. Flue gas typically contains 0.5–5 ppm NO2 and 10–100 ppm NO. NO2 at 1 ppm in the flue gas appears to cause significant amine oxidation in pilot plant testing. PZ solution can easily absorb NO2, and it is hypothesized that NO2 can catalytically oxidize PZ through free-radical propagation. The issue may not be solved by a NO2 pre-scrubber since the coexistence of NO and O2 in the flue gas will keep producing non-negligible amounts of NO2 in the ductwork and the absorber after the NO2 incoming with the flue gas has been scrubbed. In addition, NO2 may not only oxidize PZ but also the intermediate degradation products, and it is unknown if the existence of dissolved iron influences the oxidation by NO2. Previous workers have also shown that NO2 is the stoichiometric source of nitrosamine. A comprehensive analysis of NO2 oxidation is needed to address solvent management and its health/environmental impact. The new high gas flow (HGF) reactor focuses only on the absorber environment and is simpler to interpret because it does not include oxidation at high temperatures and by dissolved metal catalysts from corrosion. This paper presents the results of HGF experiments and shows evidence to support a hypothesis of amine oxidation catalyzed by NO2, presents the synergic effect of NO2 and iron on amine oxidation, points out the different effects of NO2 in clean and degraded solvents, and demonstrates that NO2 not only can oxidize amines but also their degradation products.

NO2, iron, piperazine (PZ), solvent oxidation, sol↗