Research investigations of bulkhead cylindri- cal junctions exposed to combined load, cryogenic temperature. part iii- theoretical analysis of the thermal loads
Thermal stress in thin walled shell joint of missile intertank
THERMAL STRESS↗
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Research investigations of bulkhead cylindri- cal junctions exposed to combined load, cryo- genic temperature. part iv- theoretical analysis of the buckling problem
Compression buckling of shell of revolution under axial compression - shell stability
AXIAL COMPRESSION↗
A study of thin film vacuum deposited junctions semiannual status report, 5 dec. 1964 - 5 jun. 1965
Effects of surface states and grain boundaries on free carrier concentration, mobility, and free path of charge carriers in thin films - Design and fabrication of thin film electronic devices
THIN FILM↗
A study of thin film vacuum deposited junctions Annual status report, Dec. 5, 1964 - Dec. 5, 1965
Thin film vacuum deposition semiconductors, electron tunneling devices, and field effect transistors
VACUUM DEPOSITION↗
Research Investigations of Bulkhead Cylindrical Junctions Exposed to Combined Load, Cryogenic Temperatures and Pressure. Part I - Experimental Studies
Two-dimensional analog model and 1/6 reduced scale model to study bending stress concentrations, strains, and displacements in Y-ring of Saturn V S-IV liquid oxygen container
SCALE MODEL↗
Stress state in the junction region of a right-angled branch pipe
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Riedelbach, W.↗
Pressure-sensitive bonded junction transducers
Miniature transducers involve the use of appropriate commercial epoxy resins. Design protects the sensitive semiconductor surface from ambients and excludes an air space in the device capsule.
Iannini, A.↗
A miniature piezo-junction pressure transducer.
Miniature piezojunction pressure transducer incorporating GaSb and GaAs tunnel diodes
Garfein, A.↗
Restricted-flow junction between liquids
Allowing a liquid to seep through a long crack in glass provides means for restricting its flow for long periods without attention. The length of the crack prevents the plugging to which capillaries are susceptible.
Vango, S. P.↗
The presence of deep levels in ion implanted junctions.
Deep trapping levels caused by ion implantation doping, discussing level effects on electrical characteristics of zinc implanted GaAs diodes
Hunsperger, R. G.↗
Differential photo effects in gallium arsenide- metal junctions.
Alloying pairs of metal pellets to n and p type semiinsulating GaAs, discussing photo effects
Viehmann, W.↗
P-n junctions formed in gallium antimonide
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.
Clough, R.↗
Distortion of a narrow-band FM signal in a lossless abrupt-junction nonoverdriven varactor doubler
Narrow bandwidth FM signal distortion during multiplication in lossless varactor multiplier calculated, using equivalent circuit of frequency doubler
Grayzel, A. I.↗
Electron local-mode phonon interaction in metal-insulator-semiconductor tunnel junctions
Tunneling electron and local mode phonon interaction in MIS n-type semiconductors
Compton, W. D.↗
Simple method of making photovoltaic junctions Patent
Gallium arsenide solar cell preparation by surface deposition of cuprous iodide on thin n-type polycrystalline layers and heating in iodine vapor
Ellis, S. G.↗
Junction transistor synchronous rectification
Rectification efficiency and reliability of driven transistor synchronous rectifiers
Pasciutti, E. R.↗
The Afar triple junction and sea-floor spreading
Critique of Ethiopian Afar depression formation as oceanic crust resulting from Arabia drift, considering plate tectonics analysis for bifurcated spreading zones
Mohr, P. A.↗