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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Nanoionics-Based Switches for Radio-Frequency Applications

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Nessel, James↗
NASA NTRS1980

Azimuth correlator design for IC chip

Azimuth correlator circuit synthetic-aperature radar (SAR) is designed for single integrated circuit (IC) chip. Azimuth correlator modules constructed with sets of such chips could make real-time signal processing possible. Primary advantages are realized in areas of weight and power requirement reductions.

Tyree, V. C.↗
NASA NTRS2005

Continuous, Full-Circle Arctangent Circuit

A circuit generates an analog voltage proportional to an angle, in response to two sinusoidal input voltages having magnitudes proportional to the sine and cosine of the angle, respectively. That is to say, given input voltages proportional to sin(Omega(t))sin(Theta) and sin(Omega(t))cos(Theta) [where Theta denotes the angle, mega denotes 2(pi) x a carrier frequency, and t denotes time], the circuit generates a steady voltage proportional to Theta. The output voltage varies continuously from its minimum to its maximum value as Theta varies from -180deg to 180deg. While the circuit could accept input modulated sine and cosine signals from any source, it must be noted that such signals are typical of the outputs of shaft-angle resolvers in electromagnetic actuators used to measure and control shaft angles for diverse purposes like aiming scientific instruments and adjusting valve openings. In effect, the circuit is an analog computer that calculates the arctangent of the ratio between the sine and cosine signals. The full-circle angular range of this arctangent circuit stands in contrast to the range of prior analog arctangent circuits, which is from slightly greater than -90deg to slightly less than +90deg. Moreover, for applications in which continuous variation of output is preferred to discrete increments of output, this circuit offers a clear advantage over resolver- to-digital integrated circuits.

Alhorn, Dean C.↗
NASA NTRS1967

Test and inspection for process control of monolithic circuits

Report details the test and inspection procedures for the mass production of high reliability integrated circuits. It covers configuration control, basic fundamentals of quality control, control charts, wafer process evaluation, general process evaluation, evaluation score system, and diffusion evaluation.

Spangenberg, E.↗
NASA NTRS1976

DIP extractor simplifies circuit removal

Easily constructed tool can be used to pull dual in-line packaged integrated circuits off printed-wiring boards without damaging pins. Extractor can be designed for most popular IC configurations and sizes.

Nies, T.↗
NASA NTRS1979

CMOS circuit-fabrication handbook

Report describes complementary metal-oxide-semiconductor (CMOS) process used to fabricate integrated circuits at Marshall Space Flight Center. It also presents general discussions of circuit design, mask making packaging, and testing.

Bouldin, D. L.↗
NASA NTRS1981

Cooling/grounding mount for hybrid circuits

Extremely short input and output connections, adequate grounding, and efficient heat removal for hybrid integrated circuits are possible with mounting. Rectangular clamp holds hybrid on printed-circuit board, in contact with heat-conductive ground plate. Clamp is attached to ground plane by bolts.

Bagstad, B.↗
NASA NTRS2006

Functional Recovery of Analog Circuits at Extreme Temperatures

This paper describes a new reconfigurable analog array (RAA) architecture and integrated circuit (IC) used to map analog circuits that can adapt to extreme temperatures under programmable control. Algorithm-driven adaptation takes place on the RAA IC. The algorithms are implemented in a separate Field Programmable Gate Array (FPGA) IC, co-located with the RAA in the extreme temperature environment. The experiments demonstrate circuit adaptation over a wide temperature range, from extremely low temperature of -180 C to high 120 C.

self-recovery↗
DOE OSTI2022

The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors

This manuscript describes the optimization of the front-end readout electronics for high granularity hybrid pixel detectors. The theoretical study aims at minimizing the noise and jitter. The model presented here is validated with both circuit post layout simulations and measurements on the Timepix4 Application Specific Integrated Circuit (ASIC). The analog front-end circuit and the procedure to optimize the dimensions of the main transistors are described with detail. The Timepix4 is the most recent ASIC designed in the framework of the Medipix4 Collaboration. It was manufactured in 65nm CMOS process, and consists of a four side buttable matrix of 448 × 512 pixels with 55µm pitch. The analog front-end has a gain of ~36mV/ke - when configured in High Gain Mode, and ~20mV/ke - when configured in Low Gain Mode. The Equivalent Noise Charge (ENC) is ~68e - rms and ~80e - rms in High Gain Mode and in Low Gain Mode respectively. In event driven mode the incoming hits can be time stamped within a ~ 200ps time bin and the chip can deal with a maximum flux of ~ 3.6MHzmm –2 s –1 . In photon counting mode, the chip can deal with up to ~ 5GHzmm –2 s –1 . The routine designed to optimize the Timepix4 front-end is then used to analyze the performance limits in terms of jitter and noise for Charge Sensitive Amplifiers in pixel detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

GaN HEMT Fabrication for Radiation-Hardened Sensing and Communications Electronics

Gallium nitride (GaN), a wide bandgap semiconductor, has vast potential to address two environment conditions associated with the application of electronics to nuclear power: elevated temperatures, and high levels of radiation. A process was developed at The Ohio State University (OSU) to enable fabrication of complex digital and analog electronics circuits for application to nuclear power environments such as locations near or in the reactor core or in spent nuclear fuel casks. Radio frequency (RF)-grade GaN high electron mobility transistor (HEMT) devices were fabricated as part of this process. These were fabricated as depletion mode and enhancement mode devices. They have been electrically characterized and have demonstrated the expected performance. Behavioral models (Verilog-A) were developed from these device measurements to enable electrical simulation of GaN HEMT devices and circuits using common electronics simulation tools based on Simulation Program with Integrated Circuit Emphasis (SPICE). A similar set of GaN HEMT devices is being developed to provide lower speed devices for logic and analog functions. These accomplishments position this technology for effective application to sensor interfacing, signal processing, and data communications in nuclear power plants, including operation in or near the reactor core.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
NASA NTRS1971

Low-frequency triangular wave generator

Triangular waveform is generated by a combination of two integrated circuit operational amplifiers, one to produce square wave and other to integrate square wave and generate triangular wave.

Thompson, J. P.↗
NASA NTRS1973

Gyrator employing field effect transistors

A gyrator circuit of the conventional configuration of two amplifiers in a circular loop, one producing zero phase shift and the other producing 180 deg phase reversal is examined. All active elements are MOS field effect transistors. Each amplifier comprises a differential amplifier configuration with current limiting transistor, followed by an output transistor in cascode configuration, and two load transistors of opposite conductivity type from the other transistors. A voltage divider control circuit comprises a series string of transistors with a central voltage input to provide control, with locations on the amplifiers receiving reference voltages by connection to appropriate points on the divider. The circuit produces excellent response and is well suited for fabrication by integrated circuits.

Hochmair, E. S.↗
NASA NTRS1989

Detector For FM Voice Or Digital Signals

Frequency-modulation (FM) detector operates with either analog audio (usually voice) signals or digital signals sent by differential minimum-shift keying (DMSK). Performance expected similar to conventional limiter/discriminator FM detectors. Detector operates at baseband, obviating need for band-pass filtering at intermediate frequency. Baseband version made in very-large-scale integrated circuit. New detector useful in mobile communications, where trend is toward integrated voice and data service.

Davarian, Faramaz↗
NASA NTRS1988

Frequency domain laser velocimeter signal processor

A laser velocimeter signal processor for measuring the signal frequency within a signal burst. The input signal is converted to digital by an ADC 16 and then shifted into shift registers 30 and 31. An automatic gain circuit 15 controls the gain of the input signal. A signal integration circuit 32 determines when a signal burst has been captured by the shift registers and then transfers the contents of the registers to data latches 33 and 34. The data in data latches 33 and 34 is processed by digital bandpass filters 57-63, square law detectors 64-70, burst counters 71-77 and signal processor 78 to determine the frequency of the signal within the captured signal burst.

James F Meyers↗
NASA NTRS2006

Temperature-adaptive Circuits on Reconfigurable Analog Arrays

This paper describes a new reconfigurable analog array (MA) architecture and integrated circuit (IC) used to map analog circuits that can adapt to extreme temperatures under programmable control. Algorithm-driven adaptation takes place on the RAA IC. The algorithms are implemented in a separate Field Programmable Gate Array (FPGA) IC, co-located with the RAA in the extreme temperature environment. The experiments demonstrate circuit adaptation over a wide temperature range, from extremely low temperature of -180 C to high 120 C.

self recovery↗
NASA NTRS2005

High-efficiency solid state power amplifier

A high-efficiency solid state power amplifier (SSPA) for specific use in a spacecraft is provided. The SSPA has a mass of less than 850 g and includes two different X-band power amplifier sections, i.e., a lumped power amplifier with a single 11-W output and a distributed power amplifier with eight 2.75-W outputs. These two amplifier sections provide output power that is scalable from 11 to 15 watts without major design changes. Five different hybrid microcircuits, including high-efficiency Heterostructure Field Effect Transistor (HFET) amplifiers and Monolithic Microwave Integrated Circuit (MMIC) phase shifters have been developed for use within the SSPA. A highly efficient packaging approach enables the integration of a large number of hybrid circuits into the SSPA.

Wallis, Robert E.↗
NASA NTRS1987

Low-cost FM oscillator for capacitance type of blade tip clearance measurement system

The frequency-modulated (FM) oscillator described is part of a blade tip clearance measurement system that meets the needs of a wide class of fans, compressors, and turbines. As a result of advancements in the technology of ultra-high-frequency operational amplifiers, the FM oscillator requires only a single low-cost integrated circuit. Its carrier frequency is 42.8 MHz when it is used with an integrated probe and connecting cable assembly consisting of a 0.81 cm diameter engine-mounted capacitance probe and a 61 cm long hermetically sealed coaxial cable. A complete circuit analysis is given, including amplifier negative resistance characteristics. An error analysis of environmentally induced effects is also derived, and an error-correcting technique is proposed. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a rotor blade thickness of 1.2 mm. High-temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum permissible seal temperature. The major source of error is the residual FM oscillator noise, which produces a clearance error of + or - 10 microns at a clearance of 0.5 mm. The oscillator electronics accommodates the high rotor speeds associated with small engines, the signals from which may have frequency components as high as 1 MHz.

Barranger, John P.↗