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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Manipulation of chiral interface states in a moiré quantum anomalous Hall insulator

Moiré systems made from stacked two-dimensional materials host correlated and topological states that can be electrically controlled with applied gate voltages. One prevalent form of topological state that can occur are Chern insulators that display a quantum anomalous Hall effect. Here we manipulate Chern domains in an interaction-driven quantum anomalous Hall insulator made from twisted monolayer–bilayer graphene and observe chiral interface states at the boundary between different domains. By tuning the carrier concentration, we stabilize neighbouring domains of opposite Chern number that then provide topological interfaces devoid of any structural boundaries. This allows the wavefunction of chiral interface states to be directly imaged using a scanning tunnelling microscope. In conclusion, our theoretical analysis confirms the chiral nature of observed interface states and allows us to determine the characteristic length scale of valley polarization reversal across neighbouring Chern domains.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A resonant valence bond spin liquid in the dilute limit of doped frustrated Mott insulators

Abstract Ideas about resonant valence bond liquids and spin–charge separation have led to key concepts in physics such as quantum spin liquids, emergent gauge symmetries, topological order and fractionalization. Despite extensive efforts to demonstrate the existence of a resonant valence bond phase in the Hubbard model that originally motivated the concept, a definitive realization has yet to be achieved. Here we present a solution to this long-standing problem by uncovering a resonant valence bond phase exhibiting spin–charge separation in realistic Hamiltonians. We show analytically that this ground state emerges in the dilute-doping limit of a half-filled Mott insulator on corner-sharing tetrahedral lattices with frustrated hopping, in the absence of exchange interactions. We confirm numerically that the results extend to finite exchange interactions, finite-sized systems and finite dopant density. Although much attention has been devoted to the emergence of unconventional states from geometrically frustrated interactions, our work demonstrates that kinetic energy frustration in doped Mott insulators may be essential for stabilizing robust, topologically ordered states in real materials.

Physics↗
DOE OSTI2026

Optical control of integer and fractional Chern insulators

Optical control of topology, particularly in the presence of electron correlations, is an interesting topic with broad scientific and technological impact. Twisted MoTe 2 bilayer (tMoTe 2 ) is a zero-field fractional Chern insulator (FCI), exhibiting the fractionally quantized anomalous Hall effect. As the chirality of the edge states and sign of the Chern number are determined by the underlying ferromagnetic polarization, manipulation of ferromagnetism would realize control of the Chern insulator (CI)/FCI states. Here, in this work, we demonstrate control of ferromagnetic polarization, and thus the CI and FCI states, by circularly polarized optical pumping in tMoTe 2 . At low excitation power, we achieve on-demand preparation of ferromagnetic polarization by optical training, that is, electrically tuning the system from non-ferromagnetic to desirable ferromagnetic states under helicity-selective optical pumping. With increased excitation power, we further realize direct optical switching of ferromagnetic polarization at a temperature far below the Curie temperature. Both optical training and direct switching are most effective near CI and FCI states, which we attribute to a gap-enhanced valley polarization of optically pumped holes. The magnetization can be dynamically switched by modulating the helicity of optical excitation. Spatially resolved measurements further demonstrate optical writing of ferromagnetic, and thus CI (or FCI) domains. Our work realizes precise optical control of a topological quantum many-body system with potential applications in topological spintronics, quantum memories and creation of exotic edge states by programmable patterning of integer and fractionally quantized anomalous Hall domains.

ferromagnetism↗
DOE OSTI2020

$${\mathcal{P}}{\mathcal{T}}$$-Symmetric Effective Model for Nonequilibrium Phase Transitions in a Dissipative Fermionic Mott Insulator Chain

Nonequilibrium phase transitions in open dissipative systems can be described as instabilities in the spectra and wavefunctions of effective non-Hermitian Hamiltonians invariant under simultaneous parity (P) and time-reversal (T) transformations. The degree of non-Hermiticity reflects the strength of the external drive and dissipation, and the transition is described as a loss of the PT symmetry of the solutions corresponding to stationary low-drive dynamics. This approach has been successfully applied to spin, superconducting, and Mott insulator systems. However, the microscopic foundations for the employed phenomenological models are currently lacking. Here we propose a microscopic mechanism leading to the PT-symmetric effective model in the context of the nonequilibrium Mott transition in a dissipative Hubbard chain. Our model comprises a half-filled fermionic Hubbard chain subject to a constant electric field. The dissipation is introduced via the electron-phonon coupling. We obtain the explicit expressions for the non-Hermitian parameter in terms of the electron-phonon coupling strength and driving field. Analyzing the implications of microscopic model, we find a re-entrant Mott insulator with the increasing electric field for phonon density of states that increases slower than the square of the energy (such as in one or two dimensions), or varies non-monotonously with energy.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Metal–insulator transition tuned by oxygen vacancy migration across TiO2/VO2 interface

Abstract Oxygen defects are essential building blocks for designing functional oxides with remarkable properties, ranging from electrical and ionic conductivity to magnetism and ferroelectricity. Oxygen defects, despite being spatially localized, can profoundly alter global properties such as the crystal symmetry and electronic structure, thereby enabling emergent phenomena. In this work, we achieved tunable metal–insulator transitions (MIT) in oxide heterostructures by inducing interfacial oxygen vacancy migration. We chose the non-stoichiometric VO 2-δ as a model system due to its near room temperature MIT temperature. We found that depositing a TiO 2 capping layer on an epitaxial VO 2 thin film can effectively reduce the resistance of the insulating phase in VO 2 , yielding a significantly reduced R OFF /R ON ratio. We systematically studied the TiO 2 /VO 2 heterostructures by structural and transport measurements, X-ray photoelectron spectroscopy, and ab initio calculations and found that oxygen vacancy migration from TiO 2 to VO 2 is responsible for the suppression of the MIT. Our findings underscore the importance of the interfacial oxygen vacancy migration and redistribution in controlling the electronic structure and emergent functionality of the heterostructure, thereby providing a new approach to designing oxide heterostructures for novel ionotronics and neuromorphic-computing devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Supercapacitance and superinductance of TiN and NbTiN films in the vicinity of superconductor-to-insulator transition

We investigate the low-temperature complex impedance of disordered insulating thin TiN and NbTiN films in the frequency region 400 Hz–1 MHz in close proximity to the superconductor–insulator transition (SIT). The frequency, temperature, and magnetic field dependencies of the real and imaginary parts of the impedance indicate that in full accord with the theoretical predictions and earlier observations, the films acquire self-induced electronic granularity and become effectively random arrays of superconducting granules coupled via Josephson links. Accordingly, the inductive component of the response is due to superconducting droplets, while the capacitive component results from the effective Josephson junctions capacitances. The impedance crosses over from capacitive to inductive behavior as films go across the transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Local lattice distortions drive the transition of BaIrO 3 into a ferromagnetic insulator state

Using variable temperature total and resonant x-ray scattering at the K edge of Ir species, we study the “bad metal” to insulator transition in BaIrO 3 , a canonical third transition series oxide. The usage of advanced experimental techniques and large-scale computer modeling helps us show that, contrary to the widely accepted view, charge disproportionation leading to the formation of Ir-trimers with a different number of 5d valence electrons already exists at room temperature. The charge disbalance between the trimers does not evolve much with decreasing temperature while local lattice distortions do, suggesting that the latter and not the former make a key contribution to the emergence of the enigmatic ferromagnetic insulator state of BaIrO 3 . The conclusion is supported by DFT calculations based on unmodified experimental structure data. Our work calls for a reconsideration of the role of lattice distortions in determining the electronic properties of third transition series oxides. It also charts a path to assessing these properties on a realistic and not assumed crystal structure basis.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Selective Electrocatalysis Imparted by Metal-Insulator Transition for Durability Enhancement of Automotive Fuel Cells.

Repetitive start-up and shut-down events in polymer electrolyte membrane fuel cells for automotive applications lead to serious corrosion of the cathode due to an instantaneous potential jump that results from unintended air leakage into the anodic flow field followed by a parasitic oxygen reduction reaction (ORR) on the anode. Here we report a solution to the cathode corrosion issue during the start-up/shut-down events whereby intelligent catalyst design is used to selectively promote the hydrogen oxidation reaction (HOR) while concomitantly suppressing the ORR on the anode. Platinum thin layers supported on hydrogen tungsten bronze (Pt/HxWO3) suppressed the ORR by converting themselves into an insulator following exposure to oxygen, while selectively promoting the HOR by regaining metallic conductivity following subsequent exposure to hydrogen. The HOR-selective electrocatalysis imparted by a metal-insulator transition in Pt/HxWO3 demonstrated a remarkably enhanced durability of membrane electrode assemblies compared to those with commercial Pt/C catalysts.

Jung, Sang-Mun↗
DOE OSTI2022

Quantifying the role of the lattice in metal–insulator phase transitions

Many materials exhibit phase transitions at which both the electronic properties and the crystal structure change. Some authors have argued that the change in electronic order is primary, with the lattice distortion a relatively minor side-effect, and others have argued that the lattice distortions play an essential role in the energetics of the transition. In this paper, we introduce a formalism that resolves this long-standing problem. The methodology works with any electronic structure method that produces solutions of the equation of state determining the electronic order parameter as a function of lattice distortion. We use the formalism to settle the question of the physics of the metal–insulator transitions in the rare-earth perovskite nickelates (RNiO 3 ) and Ruddlesden–Popper calcium ruthenates (Ca 2 RuO 4 ) in bulk, heterostructure, and epitaxially strained thin film forms, finding that electron-lattice coupling is key to stabilizing the insulating state in both classes of materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Hole doping in a negative charge transfer insulator

RE NiO 3 is a negative charge transfer energy system and exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. In order to explore how hole doping affects the BD transition, we have investigated the electronic structure of single-crystalline thin films of Nd 1-x Ca x NiO 3 by synchrotron based experiments and ab-initio calculations. Here we show that for a small value of x, the doped holes are localized on one or more Ni sites around the dopant Ca 2+ ions, while the BD state for the rest of the lattice remains intact. The effective charge transfer energy (Δ) increases with Ca concentration and the formation of BD phase is not favored above a critical x, suppressing the insulating phase. Our present study firmly demonstrates that the appearance of BD mode is essential for the MIT of the RE NiO 3 series.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Codesign of an integrated metal–insulator–semiconductor photocathode for photoelectrochemical reduction of CO 2 to ethylene

Photoelectrochemical carbon-dioxide reduction (PEC CO 2 R) is a potentially attractive means for producing chemicals and fuels using sunlight, water, and carbon dioxide; however, this technology is in its infancy. To date, most studies of PEC CO 2 R have reported products containing one carbon atom (C 1 products) but the production of valuable products containing two or more carbons (C 2+ products), such as ethylene, ethanol, etc., is rarely demonstrated. Metal–semiconductor–insulator (MIS) photocathode/catalyst structures offer a promising approach for this purpose, since they integrate the functions of light absorption, charge separation, and catalysis. In this study, we have investigated a Cu/TiO 2 /p-Si photocathode/catalyst structure with the aim of establishing the effects of semiconductor–insulator interactions on the performance of the photocathode and the influence of the direction of illumination of the MIS structure on the total current density and the distribution of products formed by on the Cu catalyst. Here, we have also examined the influence of ionomer coatings deposited on the Cu surface on the total current density and the distribution of products formed. A major finding is that for a fixed Cu potential the distribution of products formed by PEC CO 2 R are the same, irrespective of the direction of illumination, and are identical to those obtained by electrochemical reduction of CO 2 (EC CO 2 R). Another important finding is that the total current density and the faradaic efficiency to ethylene are enhanced significantly by deposition of a thin bilayer of Sustainion/Nafion onto the surface of the Cu.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Electrochemistry-induced deposition for controlled formation of metal–organic framework films on insulator and conductor substrates

A number of technological applications of metal–organic frameworks (MOFs) require the formation of their thin films on insulator and/or conductor substrates at selected areas with desired thicknesses. However, fabrication of such MOF films often requires multi-step processes and/or sophisticated instruments. Herein, we discuss electrochemistry-induced MOF deposition, which permits the direct formation of a thin MOF film with controlled thickness at a desired area on various substrates. So far, we have reported the applicability of this deposition method for the formation of zeolitic imidazolate framework-8 (ZIF-8) films. In this method, a ZIF-8 film is formed on an insulator or a conductor substrate upon applying a cathodic potential to a working electrode that is placed above the substrate. Importantly, the film is formed just below the cathodic working electrode, indicating that the position and lateral dimensions (on the mm- to μm-scale) of the film can be controlled by those of the working electrode. In addition, film thickness is controllable in the range of tens to hundreds of nanometers by adjusting potential application conditions at the cathodic working electrode. These results show that the electrochemistry-induced deposition method will provide a simple means for the fabrication of a patterned MOF film on various substrates without additional lithographic processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Parasitic conduction loss of lithium niobate on insulator platform

Thin-film lithium niobate on insulator (LNOI) has recently emerged as an exciting platform for nonlinear integrated photonic devices, drawing parallels with the impact of silicon on insulator (SOI) in the electronic device realm. While the influence of interfacial states of SOI on electronic device performance, particularly their contribution to parasitic radio frequency (RF) losses, is well-documented, this aspect remains relatively unexplored in LNOI, despite their shared silicon/oxide interface structure. Here, we investigate the RF loss arising from mobile charges at the silicon/oxide interface of the LNOI platform. We show that this parasitic conduction can be exacerbated, especially during plasma etching, and leads to substantial RF losses. Through strategic incorporation of a trap-rich poly-silicon layer at this interface, we effectively eliminate this parasitic conduction, resulting in the suppression of RF losses. This work establishes crucial guidelines for harnessing LNOI in applications such as high-frequency electro-mechanical devices, high-speed electro-optic modulators, and high-efficiency microwave-to-optics converters.

Physics↗
DOE OSTI2025

Nonlocal, diamagnetic electromagnetic effects in magnetically insulated transmission lines

We identify the time-dependent physics responsible for the critical reduction of current losses in magnetically insulated transmission lines (MITLs) due to uninsulated space charge-limited currents of electrons emitted by field stress. A drive current of sufficiently short pulse length introduces a strong enough time dependence that steady-state results alone become inadequate for the complete understanding of current losses. The time-dependent physics can be described as a nonlocal, diamagnetic electromagnetic response of space charge limited currents. As the pulse length is increased or equivalently, the MITL length reduced, these time-dependent effects diminish and current losses converge to those predicted by the well-known Child–Langmuir law in the external (vacuum) fields. We present a simple one-dimensional (1D) model that encapsulates the essence of this physics. We find excellent agreement with 2D particle-in-cell simulations for two MITL geometries, Cartesian parallel plate and azimuthally symmetric straight coaxial. Based on the 1D model, we explore various scaling dependencies of MITL losses with relevant parameters, e.g., peak current, pulse length, geometrical dimensions, etc. We propose an improved physics model of magnetic insulation in the form of a Hull curve, which could also help improve predictions of current losses by common circuit element codes, such as BERTHA. Finally, we describe how to calculate the temperature rise due to electron impact within the 1D model.

Computer simulation↗
DOE OSTI2022

Field-tuned ferroquadrupolar quantum phase transition in the insulator TmVO 4

We report results of low-temperature heat-capacity, magnetocaloric-effect, and neutron-diffraction measurements of TmVO 4 , an insulator that undergoes a continuous ferroquadrupolar phase transition associated with local partially filled 4 f orbitals of the thulium (Tm 3 + ) ions. The ferroquadrupolar transition, a realization of Ising nematicity, can be tuned to a quantum critical point by using a magnetic field oriented along the c axis of the tetragonal crystal lattice, which acts as an effective transverse field for the Ising-nematic order. In small magnetic fields, the thermal phase transition can be well described by using a semiclassical mean-field treatment of the transverse-field Ising model. However, in higher magnetic fields, closer to the field-tuned quantum phase transition, subtle deviations from this semiclassical behavior are observed, which are consistent with expectations of quantum fluctuations. Although the phase transition is driven by the local 4 f degrees of freedom, the crystal lattice still plays a crucial role, both in terms of mediating the interactions between the local quadrupoles and in determining the critical scaling exponents, even though the phase transition itself can be described via mean field. In particular, bilinear coupling of the nematic order parameter to acoustic phonons changes the spatial and temporal fluctuations of the former in a fundamental way, resulting in different critical behavior of the nematic transverse-field Ising model, as compared to the usual case of the magnetic transverse-field Ising model. Our results establish TmVO 4 as a model material and electronic nematicity as a paradigmatic example for quantum criticality in insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Theory of topological exciton insulators and condensates in flat Chern bands

Excitons are the neutral quasiparticles that form when Coulomb interactions create bound states between electrons and holes. Due to their bosonic nature, excitons are expected to condense and exhibit superfluidity at sufficiently low temperatures. In interacting Chern insulators, excitons may inherit the nontrivial topology and quantum geometry from the underlying electron wavefunctions. We theoretically investigate the excitonic bound states and superfluidity in flat-band insulators pumped with light. We find that the exciton wavefunctions exhibit vortex structures in momentum space, with the total vorticity being equal to the difference of Chern numbers between the conduction and valence bands. Moreover, both the exciton binding energy and the exciton superfluid density are proportional to the Brillouin-zone average of the quantum metric and the Coulomb potential energy per unit cell. Spontaneous emission of circularly polarized light from radiative decay is a detectable signature of the exciton vorticity. We propose that the vorticity can also be experimentally measured via the nonlinear anomalous Hall effect, whereas the exciton superfluidity can be detected by voltage-drop quantization through a combination of quantum geometry and Aharonov–Casher effect. Topological excitons and their superfluid phase could be realized in flat bands of twisted Van der Waals heterostructures.

Science & Technology - Other Topics↗
DOE OSTI2025

Realizing a topological diode effect on the surface of a topological Kondo insulator

Introducing the concept of topology into material science has sparked a revolution from classic electronic and optoelectronic devices to topological quantum devices. The latter has potential for transferring energy and information with unprecedented efficiency. Here, we demonstrate a topological diode effect on the surface of a three-dimensional material, SmB 6 , a candidate topological Kondo insulator. The diode effect is evidenced by pronounced rectification and photogalvanic effects under electromagnetic modulation and radiation at radio frequency. Our experimental results and modeling suggest that these prominent effects are intimately tied to the spatially inhomogeneous formation of topological surface states (TSS) at the intermediate temperature. This work provides a manner of breaking the mirror symmetry (in addition to the inversion symmetry), resulting in the formation of pn-junctions between puddles of metallic TSS. Further, this effect paves the way for efficient current rectifiers or energy-harvesting devices working down to radio frequency range at low temperature, which could be extended to high temperatures using other topological insulators with large bulk gap.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Unconventional magnetic oscillations in a kagome Mott insulator

In metals, electrons in a magnetic field undergo cyclotron motion, leading to oscillations in physical properties called quantum oscillations. This phenomenon has never been seen in a robust insulator because there are no mobile electrons. We report an exception to this rule. We study a Mott insulator on a kagome lattice which does not order magnetically down to milli-Kelvin temperatures despite antiferromagnetic interactions. We observe a plateau at magnetization equal to $\frac{1}{9}$ Bohr magneton per magnetic ion, accompanied by oscillations in the magnetic torque, reminiscent of quantum oscillations in metals. The temperature dependence obeys Fermi distribution. These phenomena are consistent with a quantum spin liquid state whose excitations are fermionic spinons with a Dirac-like spectrum coupled to an emergent gauge field.

36 MATERIALS SCIENCE↗