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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Transient radiative cooling of an absorbing and scattering cylinder - A separable solution

A cylindrical region filled with absorbing-emitting material is cooled by radiation to surroundings at a much lower temperature. A solution is found showing that, for each set of parameters, the transient radial temperature distribution reaches a fixed shape, although the temperatures are decreasing with time. This 'fully developed' transient region is characterized by having a constant emittance based on instantaneous values of the cylinder heat loss and mean temperature. This emittance depends only on the optical radius of the cylinder and the scattering albedo. The emittance is lower than that for a cylinder at uniform temperature. This arises from the larger local cooling and, hence, reduced temperatures of the outer layers of the cylinder. An examination of this transient emittance provides the ranges of parameters within which the simplification can be made that the cylinder has uniform radial temperature distribution throughout the cooling process.

Siegel, Robert↗
NASA NTRS1989

Optical properties of sputtered aluminum on graphite/epoxy composite material

Solar absorptance, emittance, and coating thickness were measured for a range of coating thicknesses from about 400 A to 2500 A. The coatings were sputtered from an aluminum target onto 1-inch-diameter substrates of T300/5209 graphite/epoxy composite material with two different surface textures. Solar absorptance and emittance values for the specimens with the smooth surface finish were lower than those for the specimens with the rough surface finish. The ratio of solar absorptance to emittance was higher for the smooth specimens, increasing from 2 to 4 over the coating thickness range, than for the rough ones, which had a constant ratio of about 1. The solar absorptance and emittance values were dependent on the thickness of the sputtered coating.

Witte, William G., Jr.↗
NASA NTRS1990

Optical property measurements as a diagnostic tool for control of materials processing in space and on Earth

A new method is described, including results, to measure, control, and follow containerless processing in ground based levitators. This technique enables instantaneous optical property measurements from a transient solid or liquid surface concurrent with true temperature measurement. This was used successfully as a diagnostic tool to follow processing of Al, Si, and Ti during electromagnetic levitation. Experiments on Al show the disappearance of the oxide (emittance 0.33) at ca. 1300 C leaving a liquid surface with an emittance of 0.06. Electromagnetic levitation of silicon shows a liquid with a constant emittance (0.2) but with a solid whose emittance decreases very rapidly with increasing temperature. Consequently, the processing of materials at high temperatures can be controlled quite well through the control of surface optical properties.

Krishnan, Shankar↗
NASA NTRS1992

A comparison of techniques for extracting emissivity information from thermal infrared data for geologic studies

This article evaluates three techniques developed to extract emissivity information from multispectral thermal infrared data. The techniques are the assumed Channel 6 emittance model, thermal log residuals, and alpha residuals. These techniques were applied to calibrated, atmospherically corrected thermal infrared multispectral scanner (TIMS) data acquired over Cuprite, Nevada in September 1990. Results indicate that the two new techniques (thermal log residuals and alpha residuals) provide two distinct advantages over the assumed Channel 6 emittance model. First, they permit emissivity information to be derived from all six TIMS channels. The assumed Channel 6 emittance model only permits emissivity values to be derived from five of the six TIMS channels. Second, both techniques are less susceptible to noise than the assumed Channel 6 emittance model. The disadvantage of both techniques is that laboratory data must be converted to thermal log residuals or alpha residuals to facilitate comparison with similarly processed image data. An additional advantage of the alpha residual technique is that the processed data are scene-independent unlike those obtained with the other techniques.

Hook, Simon J.↗
NASA NTRS1992

Progress in p(+)n InP solar cells fabricated by thermal diffusion

In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

Faur, Mircea↗
NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗
NASA NTRS1994

Thermal-infrared remote sensing and Kirchhoff's Law. 1: Laboratory measurements

By the end of this century the Earth Observing System (EOS) will provide worldwide, thermal infrared, multispectral images of the Earth, presenting geologists with a new kind of remote sensing data for interpretation. Thus it has become essential to understand the spectral emittance behavior of terrestrial surface materials. Perhaps the most fundamental question to be answereed is the extent to which such materials follow Kirchhoff's law (epsilon = 1 -R) under laboratory and field conditions, especially when a sample displays a thermal gradient. We present the first rigorous quantitative comparison of directional and hemispherical reflectance and directional emittance of rock and soil samples in the laboratory, with thermal gradients induced by heating them from below and allowing them to radiate to a colder background. The results show that only an extemeley low density sample composed of fine particles sifted into a 'fairy castle' structure displays a thermal gradient steep enough within the infrared skin depth to cause significant (6%) departure from Kirchhoff's law. There is no detectable effect on the more normal terrestrial samples, such as soils and rocks measured in the laboratory, even when semitransparent coatings are involved. Thus both emittance and reflectance measurements can be used to calculate sample emissivity for most terrestrial surface materieals. However, the effect on Kirchhoffian behavior of different field environments, which may induce a steeper thermal gradient in particulate samples, has yet to be determined, and some low-density surface materials like newly fallen snow, frost, and efflorescent salts on playas have yet to be measured in emittance.

Salisbury, John W.↗
NASA NTRS1997

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗
NASA NTRS1997

Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗
NASA NTRS1998

Thermophotovoltaic Energy Conversion Development Program

Completely integrated thermophotovoltaic (TPV) power sources in the range of 100 to 500 watts are being developed. The technical approach taken in this project focuses on optimizing the integrated performance of the primary subsystems in order to yield high energy conversion efficiency and cost effectiveness. An important aspect of the approach is the use of a narrow band fibrous emitter radiating to a bandgap matched photovoltaic array to minimize thermal and optical recuperation requirements, as well as the non-recoverable heat losses. For the prototype system, fibrous ytterbia emitters radiating in a narrow band centered at 980 nm are matched with high efficiency silicon photoconverters. The integrated system includes a dielectric stack filter for optical energy recovery and a ceramic recuperator for thermal energy recovery. The prototype TPV system uses a rapid mix distributed fuel delivery system with controlled feeding of the fuel and heated air into a flame at the surface of the emitter. This makes it possible to operate at air preheat temperatures well above the auto-ignition temperature of the fuel thereby substantially increasing the system efficiency. The system has been operated with air preheat temperatures up to 1367 K and has produced a uniform narrow band radiation over the surface of the emitter with this approach. The design of the system is described and test data for the system and some of the key components are presented. The results from a system model, which show the impact of various parameters on system performance, are also discussed.

Shukla, Kailash↗
NASA NTRS2001

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Bhattacharya, Pallab↗
NASA NTRS2004

InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

Wilt, David M.↗
NASA NTRS2004

Mars Radiator Characterization Experimental Program

Radiators are an enabling technology for the human exploration and development of the moon and Mars. As standard components of the heat rejection subsystem of space vehicles, radiators are used to reject waste heat to space and/or a planetary environment. They are typically large components of the thermal control system for a space vehicle or human habitation facility, and in some cases safety factors are used to oversize them when the operating environment cannot be fully characterized. Over-sizing can impose significant weight and size penalties that might be prohibitive for future missions. Radiator performance depends on the size of the radiator surface, its emittance and absorptance, the radiator temperature, the effective sky temperature surrounding the radiator, solar radiation and atmospheric irradiation levels, convection to or from the atmosphere (on Mars), and other conditions that could affect the nature of the radiator surface, such as dust accumulation. Most particularly, dust is expected to be a major contributor to the local environmental conditions on either the lunar or Martian surface. This conclusion regarding Mars is supported by measurements of dust accumulation on the Mars Sojourner Rover solar array during the Pathfinder mission. This Final Report describes a study of the effect of Martian dust accumulation on radiator performance. It is comprised of quantitative measurements of effective emittance for a range of dust accumulation levels on surfaces of known emittance under clean conditions. The test radiator coatings were Z-93P, NS-43G, and Silver Teflon (10 mil) film. The Martian dust simulant was Carbondale Red Clay. Results were obtained under vacuum conditions sufficient to reduce convection effects virtually to zero. The experiments required the development of a calorimetric apparatus that allows simultaneous measurements of the effective emittance for all the coatings at each set of experimental conditions. A method of adding dust to multiple radiator coupons was developed and shown to be capable of depositing dust on the surfaces with acceptable uniformity. In these experiments, the dust layer accumulates under earth gravity and in the presence of an earth atmosphere. An invention disclosure for the dust deposition apparatus is being filed through NASA and University of Houston.

Witte, Larry C.↗
NASA NTRS1995

Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

Source record↗
NASA NTRS1997

Thermophotovoltaic Cell Technology Transferred to the Department of Energy Laboratory and a Commercial Manufacturer

Researchers in the NASA Lewis Research Center's Photovoltaic Branch have developed novel photovoltaic device, called a Monolithically Interconnected Module (MIM), for use in thermophotovoltaic (TPV) power systems. TPV power systems function by heating an emitter to produce light. This light is then converted into electricity by a photovoltaic device or a solar cell. Possible heat sources for the system include concentrated solar energy, the combustion of various fuels, and nuclear decay. NASA has an interest in TPV systems for deep space (nuclear-powered) and near-Sun (solar-powered) missions. There also are many commercial and military applications for TPV, given its potential for high efficiency, low noise, and reliable power. The Monolithically Interconnected Module consists of many small solar cells that are series-interconnected on a common substrate. The cells are fabricated from indium gallium arsenide (InGaAs), which can convert the near-infrared portion of the emitter output spectrum into electricity. The InGaAs devices are deposited on an indium phosphide (InP) substrate that provides electrical isolation. On the bottom the InP substrate is an infrared reflector that returns all the photons that are not converted by the InGaAs device back to the emitter where they are absorbed. This process helps maintain the emitter temperature and dramatically improves the system efficiency. Monolithically Interconnected Module InGaAs thermophotovoltaic cell developed by Lewis. Compared with conventional TPV cells, this TPV device has higher output voltages and lower resistive losses, higher output power density, simplified thermal management, improved reliability, and higher efficiency. The Monolithically Interconnected Module was initially developed under an internally funded effort (Director's Discretionary Fund). Development is now being funded by another government agency, and prototype devices are being produced by a commercial solar cell manufacturer.

Wilt, David M.↗
NASA NTRS2002

Solar Selective Coatings Developed for Space Power Applications

A solar collector having the combined properties of high solar absorptance, low infrared emittance, and high thermal conductivity is envisioned for space power applications on minisatellites. A high solar absorptance is needed to collect as much of the incident solar radiation as possible and a low infrared emittance is needed to minimize radiant energy losses. A lightweight material having a high thermal conductivity is needed to transport the absorbed energy to where it is needed. Such a solar collector may be used with a low temperature-differential heat engine to provide electric power to the minisatellite components or as a source of thermal energy for a thermal bus that would heat remote regions of the spacecraft. The key to such a collector is the use of cermet coatings. Cermet coatings are composed of molecular islands of metal embedded in a three-dimensional matrix of dielectric. Recent research on molecular mixtures of aluminum and aluminum oxide at the NASA Glenn Research Center has yielded cermet coatings with a solar absorptance a of 0.797 and an infrared emittance epsilon of 0.131, yielding an alpha/epsilon ratio of 6. Although additional work is needed to further increase the alpha/epsilon ratio, these coatings are attractive owing to their potential durability in the space environment. The aluminum oxide surface should provide substantial protection from the atomic oxygen found in low Earth orbit. To help minimize emittance, these coatings are deposited on a smooth surface. The selected surface is aluminum that has been diamond turned to a mirror finish. Cermet coatings are manufactured by sputter deposition. To achieve the desired variable composition, Glenn's researchers implemented a novel approach using a cylindrical target composed of aluminum and aluminum oxide. Rotating the cylinder during the deposition process yields a coating of variable composition. A photograph of the custom-made aluminum and aluminum oxide cylindrical target installed in the sputter deposition chamber is shown.

Jaworske, Donald A.↗
NASA NTRS2005

Diamond/diamond-like carbon coated nanotube structures for efficient electron field emission

The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

Dimitrijevic, Steven↗
NASA NTRS2010

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Frez, Clifford F.↗