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At least 829 records · Page 46

Electrically Conductive and Protective Coating Compatibility with LSCF Cathodes

Ferritic stainless-steel interconnect materials are used in intermediate or high-temperature SOFCs because of their oxidation resistance, high formability, and low cost. Their corrosion resistance is due to the formation of a protective chromium oxide scale during operation. However, the protective oxide layer produces Cr-containing volatile species at SOFC operating temperatures and conditions, which can cause cathode poisoning. Spinel coatings have been developed to prevent cathode poisoning while maintaining an electrically conductive pathway through SOFC stacks. Generally, Mn-Co-O spinel has been the material of choice, but PNNL has developed an Mn-Cu-O spinel protective coating to remove the costly Co and enhance the electrical conductivity. This paper will focus on the electrically conductive coating’s compatibility with LSCF in high-temperature operating environments.

Choi, Jung-Pyung↗

Artificial spin ice phase-change memory resistors

Abstract We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passage in the system. This introduces a current-dependent effect for a dynamic resistive state. We simulate a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe electrical memory behavior with an I – V hysteretic pinched loop, typical of memristors. These results can be extended to the more complex geometries in which artificial spin ice can be designed to engineer the hysteresis curve.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Scalable High-H 2 Flux, Robust Thin Film Solid Oxide Electrolyzer

This project was aimed at the development of proton-conducting SOEC (P-SOEC) technology that has the potential to meet key DOE H 2 production targets. A decreased proton resistance of the electrolyte and Faradaic efficiency improvements were sought to increase the fraction of consumed electrolysis power that is used to actually generate H 2 , while simultaneously decreasing cost dramatically. Moreover, the development project was intended to yield maximum durability through the use of a steam protective layer. Furthermore, sputtering was used to overcome processing challenges that have hampered P-SOEC development, while the low-temperature operation goal of 500 °C was expected to aid in mitigating thermally activated long-term degradation. The approach to high-performance, lower-temperature SOECs leveraged our existing SOFC Ni-cermet anode support and extensive thin-film sputtering layer-deposition experience. Rather than an all-in-one, reversible fuel cell approach which has many unacceptable tradeoffs, we focused on the many benefits to hydrogen generating SOECs, including the existence of synergies for reduced manufacturing costs (e.g., SOECs and SOFCs share supporting layers and overall manufacturing processing). The end result of this project was expected to increase current performance at 500 °C from approximately 0.8 A/cm 2 (at 60% Faradaic efficiency) at 1.4 V to > 1 A/cm 2 (at > 95% Faradaic efficiency) with a > 40% reduction in system cost and to enable operation of P-SOECs in steam contents >> 20% for a goal of a > 40,000 hours lifetime. To enable 500 °C operation in a very high steam atmosphere (> 20%), we proposed the use of a sputtered dense thin film (~0.1-1 µm thick) of high-stability Ba(Zr,Y)O 3 (BZY) to protect the Ba(Ce,Zr,Y,Yb)O 3 (BCZYYb) electrolyte. The BZCYYb, in turn, blocks the hole conductivity of the BZY to boost Faradaic efficiency. As FE increases, more of the consumed electricity is used in electrolysis to generate H 2 , rather than being shunted. Additionally, as cell resistance decreases, the voltage required to maintain current decreases, as well as the power required to generate the same amount of H 2 . With the proposed enhancements, these two factors result in the final 46% decrease in power needed to run the system. Likewise, a production rate of 50,000 kg H 2 /day will require 55% less active area, such that a system will need only 650 cells for an 80 cm 2 active area instead of ~1,440. Taking the 2016 DOE projected current cost and modifying the electricity cost and linearly scaling the other costs (except thermal feedstock) based on the cell area improvement, results in a 44% decrease in lifetime system cost, or a decrease from $\$$4.95/kg H 2 to $\$$2.75/kg H 2 . This is well below the 2018 DOE target of $\$$4/kg H 2 . The results from this project showed that we can create a P-SOEC with enhanced steam stability using two different electrolytes (i.e., one on top of the other) and achieve sufficiently low area specific resistance (ASR) to achieve the target performance. Unfortunately, due to extended delays at the beginning of the project and related supply chain and equipment access issues, we were not able to completely show increased Faradaic efficiency for the P-SOEC and therefore were unable to demonstrate the full proof of concept within the first budget period budget. While there are still challenges that remain to be solved, significant progress was made during this project and the concept still has merit that warrants further development.

08 HYDROGEN↗

Tuning the Superconducting Transition Temperature of Co-sputtered Iridium and Platinum Films

A superconducting film with a tunable low transition temperature (Tc) is required in high-resolution Transition-Edge Sensor (TES) detectors, which have applications including dark matter detection, low threshold coherent elastic neutrino nucleus scattering measurement, and X-ray spectroscopy. We have been investigating a new approach to tune the Tc of superconducting thin films fabricated by co-sputtering Iridium and Platinum. The effects of Pt concentration and deposition parameters on the films' structural, electrical, and superconducting properties have been studied. AFM and XRD techniques and low temperature resistance measurements have been utilized for film characterization. By varying the Pt concentration and deposition parameters when co-sputtering, we have successfully achieved controllable tuning of Tc in the range of 30-200 mK. The experimental results demonstrate co-sputtering as a viable method for controlling the Tc of Ir-based thin films that can be applied to fabricating high-resolution TESs.

Yefremenko, V. G.↗

Challenge-driven printing strategies toward high-performance solid-state lithium batteries

Solid-state lithium batteries (SSLBs) are promising candidates for replacing traditional liquid-based Li-ion batteries and revolutionizing battery systems for electric vehicles and portable devices. However, longstanding issues such as form factors, interfacial contact resistance, balance between ion conductivity and mechanical strength, and manufacturing processability limit their applications. In this review we present how advanced printing technologies can help to mitigate typical problems in main components of SSLBs and improve device performance. Here we first introduce the common printing techniques for energy storage devices, then focus on the issues and corresponding printing strategies for anodes, cathodes, and solid-state electrolytes to guide the construction of energy-dense, free-form SSLBs. The features and effects of the printed structures are emphasized, as well. We conclude by discussing the problems associated with printing technologies and the potential research directions for printed solid-state batteries.

25 ENERGY STORAGE↗

A model for excess Johnson noise in superconducting transition-edge sensors

Transition-edge sensors (TESs) are two-dimensional superconducting films utilized as highly sensitive detectors of energy or power. These detectors are voltage biased in the superconducting-normal transition where the film resistance is both finite and a strong function of temperature. Unfortunately, the amount of electrical noise observed in TESs exceeds the predictions of existing noise theories. We describe a possible mechanism for the unexplained excess noise, which we term “mixed-down noise.” The source is Johnson noise, which is mixed down to low frequencies by Josephson oscillations in devices with a nonlinear current–voltage relationship. We derive an expression for the power spectral density of this noise and show that its predictions agree with measured data.

Wessels, Abigail (ORCID:0000000173918339)↗

Anisotropic magnetism and Kondo-lattice behavior in the frustrated antiferromagnet Ce 3 ⁢MgBi 5

Here, we report the synthesis and physical characterization of single-crystalline Ce 3 ⁢MgBi 5 , a previously unexplored member of the Ce 3 ⁢𝑀⁢𝑃⁢𝑛 5 family. This compound crystallizes in the hexagonal 𝑃⁢6 3 /𝑚⁢𝑐⁢𝑚 structure, featuring an anisotropic Ce sublattice composed of zigzag chains along the 𝑐 axis and a distorted kagome-like network in the basal plane. Magnetization measurements reveal antiferromagnetic order below 𝑇 𝑁 ≈ 4.2K with strong magnetic anisotropy and multiple field-induced metamagnetic transitions for fields applied perpendicular to [001], leading to a dome-shaped 𝐻–𝑇 phase diagram. Electrical transport exhibits characteristic signatures of a Ce-based Kondo lattice, including broad resistivity maxima and pronounced field-dependent anomalies in the magnetoresistance and Hall response that track the magnetic phase boundaries. Specific-heat measurements confirm the magnetic transition and show that the full R ⁢ln⁡ 2 entropy expected for a Ce 3+ Kramers doublet is recovered by 20 K, indicating an extended temperature range of magnetic fluctuations consistent with Kondo correlations. Our results establish Ce 3 ⁢MgBi 5 as a platform within the Ce 3 ⁢𝑀⁢𝑃⁢𝑛 5 family for exploring the interplay of geometric frustration, magnetic anisotropy, and Kondo-lattice physics under applied magnetic fields.

Kondo effect↗

Competition between magnetic order and charge localization in Na 2 IrO 3 thin crystal devices thin crystal devices

Spin orbit assisted Mott insulators such as sodium iridate (Na 2 IrO 3 ) have been an important subject of study in recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects, and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na 2 IrO 3 has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by angle-resolved photoemission spectroscopy (ARPES) experiments, that electronic transport in Na 2 IrO 3 is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na 2 IrO 3 , as well as on external electric fields. Furthermore, electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na 2 IrO 3 thin crystal devices, and offer an alternative approach to study insulating 2D-materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Unreliability of two-band model analysis of magnetoresistivities in unveiling temperature-driven Lifshitz transition

Recently, anomalies in the temperature dependences of the carrier density and/or mobility derived from analysis of the magnetoresistivities using the conventional two-band model have been used to unveil intriguing temperature-induced Lifshitz transitions in various materials. For instance, two temperature-driven Lifshitz transitions were inferred to exist in the Dirac nodal-line semimetal ZrSiSe, based on two-band model analysis of the Hall magnetoconductivities where the second band exhibits a change in the carrier type from holes to electrons when the temperature decreases below T=106K and a dip is observed in the mobility vs temperature curve at T=80K. Here, in this study, we revisit the experiments and two-band model analysis on ZrSiSe. We show that the anomalies in the second band may be spurious because the first band dominates the Hall magnetoconductivities at T>80K, making the carrier type and mobility obtained for the second band from the two-band model analysis unreliable. That is, care must be taken in interpreting these anomalies as evidence for temperature-driven Lifshitz transitions. Our skepticism on the existence of such phase transitions in ZrSiSe is further supported by the validation of Kohler's rule for magnetoresistances for T≤180K. In this paper, we showcase potential issues in interpreting anomalies in the temperature dependence of the carrier density and mobility derived from the analysis of magnetoconductivities or magnetoresistivities using the conventional two-band model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Topological Hall Effect Anisotropy in Kagome Bilayer Metal Fe 3 Sn 2

Kagome lattice materials attract growing interest for their topological properties and flat-bands in electronic structure. We present comprehensive study on the anisotropy and out-of-plane electric transport in Fe 3 Sn 2 , a metal with bilayer of Fe kagome planes and with massive Dirac fermions that features high-temperature non-collinear magnetic structure and magnetic skyrmions. For the electrical current path along the c-axis, in micron-size crystals, we found a large topological Hall effect (THE) over a wide temperature range down to spin-glass state. Twofold and fourfold angular magnetoresistance are observed for different magnetic phases, reflecting the competition of magnetic interactions and magnetic anisotropy in kagome lattice that preserve robust topological Hall effect for inter kagomebilayer currents. This information provides new insight into the anisotropy in Fe 3 Sn 2 , of interest in skyrmionicbubble application-related micron-size devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Simulink Model of a New Energy EVG-005 5kW Hydropower Turbine

Simulink model for a New Energy 5kW hydropower turbine. ADCP data ("ds_streamwise_7_13.nc") and DC voltage, DC current, and rotor rotation observed from the New Energy EVG-005 Current Energy Converter (CEC) ("electrical_7_13_10ohms.nc") were collected at the Tanana River Test Site (TRTS) near Nenana Alaska. - Data was collected on July 13th, 2023 with a constant 10 ohms resistance applied with a DC load bank. - Simulink model is meant to resemble the electrical setup at the TRTS. - Model is initialized by running the "NewEnergy_2023_10hz.m" Matlab script. Then the Simulink model ("New_Energy_Model_PMSM.slx") can be run. - Results are processed with the "NewEnergy_2023_processing.m" Matlab code. The Matlab results are also saved in the "New_Energy_7_13_model_validation_results.mat" Matlab file. This can be directly loaded into the Matlab Workspace using the "Load()" command. - The timetable variables "electrical_model_downsampled" is the model results and the "electrical_limited" is the experimental data from the TRTS.

16 TIDAL AND WAVE POWER↗

CAD-based Energy & Cost Models Prove Affordable Net Zero Energy Performance for WonderWindows + 24" On-center Framing

Windows are thermally the “weakest link” in the building envelope. Increasing the thermal resistance of windows can make buildings more energy efficient and reduce the cost of electricity needed for conditioning the building. The proper design and placement of framing can also help to reduce the thermal bridging that occurs near the window frame area. This study investigates the energy performance of multi-pane acrylic windows fitting 24" on-center framing. Initial parametric analysis is done for a single zone accessory dwelling unit (ADU). Then, an energy model was developed for three types of wood-framed buildings: townhomes, stacked flats and hotels. A whole building energy simulation is performed for each of these building types in hot-humid Houston, mixed-humid New York, and cold-humid Minneapolis climates. The results show up to a 39% reduction in heating, ventilation, and air-conditioning (HVAC) related electricity consumption for the cold climate compared to the Base case which has window and wall properties based on ASHRAE standard 90.1 2019. In the hot climate, a modest increase in electricity consumption was seen due to an increase in cooling electricity demand. The ADU achieved Net Zero Energy performance in all 3 Climate Zones despite having the highest exterior surface area-to-floor area ratio: the ADU also had the highest PV kW to floor area ratio compared to the other multi-story building types. The townhomes, hotel and stacked flats respectively met 73, 52 and 57 % of electrical use in Houston, 71, 48 and 56 % in New York, and 63, 40 and 53 % in Minneapolis from energy produced by rooftop solar. If 400 W solar panels are used instead of 320 W panel used for energy simulation, it is estimated that in the townhomes, hotel and stacked flats rooftop solar can meet 91, 65 and 71 % of electrical use in Houston; 89, 60 and 70% in New York, and 79, 50 and 66 % in Minneapolis. A preliminary evaluation of cost shows that such superior performance can potentially be achieved at less first cost with this 24"on-center solution than conventional construction. All the building types at the three locations used for simulation had net energy use intensity under 20 kBtu/sf/year with 320 W solar panel and under 17 kBtu/sf/year with 400 W solar panel. Further tailoring of building envelope R-values and window solar heat gain to particular Climate Zone locations for each building type shows promise in reducing the HVAC electricity use that comprises almost half of building energy use.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

A Threshold Helium Leakage Detection Switch with Ultra Low Power Operation

Detecting helium leakage is important in many applications, such as in dry cask nuclear waste storage systems. This work develops a helium detection system based on the relative permittivity (dielectric constant) difference between air and helium. This difference changes the status of an electrostatic microelectromechanical system (MEMS) switch. The switch is a capacitive-based device and requires a very negligible amount of power. Exciting the switch’s electrical resonance enhances the MEMS switch sensitivity to detect low helium concentration. This work simulates two different MEMS switch configurations: a cantilever-based MEMS modeled as a single-degree-freedom model and a clamped-clamped beam MEMS molded using the COMSOL Multiphysics finite-element software. While both configurations demonstrate the switch’s simple operation concept, the clamped-clamped beam was selected for detailed parametric characterization due to its comprehensive modeling approach. The beam detects at least 5% helium concentration levels when excited at 3.8 MHz, near electrical resonance. The switch performance decreases at lower excitation frequencies or increases the circuit resistance. The MEMS sensor detection level was relatively immune to beam thickness and parasitic capacitance changes. However, higher parasitic capacitance increases the switch’s susceptibility to errors, fluctuations, and uncertainties.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Multi-purpose sensors using conductive Iono-elastomers

A sensor module includes a first contact, a second contact, and a sensing element made from an iono-conductive material having a conductivity that varies at least in response to variations in an environmental factor. The sensing element is electrically coupled to the first contact and to the second contact, and a first resistance of the sensing element, measured between the first contact and the second contact, varies in response to the variations in the environmental factor.

Xie, Yunsong↗

High temperature electrical property measurements of ceramics

Emerging applications in energy and aerospace systems require high quality data on the high temperature electrical properties of ceramics, particularly oxides, to guide material selection, design, and modeling. This presentation demonstrates the functionality of a specially designed sample fixture that enables electrical measurements to be conducted up to temperatures as high as 1600°C. Utilizing the mismatch in the coefficient of thermal expansion between two materials, a purely mechanical method for establishing electrical contact in the van der Pauw geometry is used to measure the bulk resistivity of ceramic materials. Measurements conducted on a number of common high temperature materials will be presented, including 20 mol % Gd-doped cerium oxide. Measurements are performed using multiple techniques and compared to literature values finding excellent agreement. The approach described in this work enables the van der Pauw method to be applied to many ceramic materials over a wide range of temperatures and environments.

Cann, David P.↗

Tuning of electronic properties in highly lattice-mismatched epitaxial SmN

Here, we establish the relationship between native N vacancies, introduced through varying growth parameters, and the structural and transport properties in SmN thin films grown via molecular beam epitaxy grown on MgO(001). The varying levels of N vacancies introduced by varying the ratio of Sm to N atoms during deposition creates excess carriers that radically transform the electrical behavior of the film, over a range of five orders of magnitude, from highly resistive to highly conductive, and unlocking a phase transition evidenced by the presence of a ferromagnetic feature in resistivity. X-ray photoelectron spectroscopy results show that this effect is much less pronounced when varying the available nitrogen species. These samples retain a highly crystal quality despite being grown on a substrate with a lattice mismatch of 20%, alleviating the strain by forming a highly strained SmO oxide layer. The integration between SmN and several transition metal nitride compounds has the potential to unlock new architectures for Josephson junction devices.

36 - MATERIALS SCIENCE↗

Electrical property enhancement of non-heat-treatable wrought aluminum alloys using graphene additives

With growing efforts of electrification, aluminum’s role as a light-weight conductor material has become increasingly prominent. There is a critical need to improve the electrical performance of aluminum at room temperature and high operating temperatures. In this study, the effect of graphene nanoparticle additives on the electrical performance of a non-heat treatable alloy were (AA3003) explored. Graphene’s unusual structure and electronic properties were used to improve AA3003 properties. Here, in this work, the effects of graphene on the evolution of electrical properties and microstructural features have been explored on lab scale hot extruded AA3003-graphene composites. Hot pressing schedules and extrusion temperatures were varied to investigate changes in intermetallic dispersion characteristics in the presence of dispersed graphene. We measured a reduction of 10.3 % in the temperature coefficient of resistance in the AA3003 sample with 0.05 wt% graphene extruded at 400 °C, along with a maximum increase of 1.1 % in electrical conductivity at 20 °C. Increasing the hot-pressing times up to 8 hours was also found to consistently increase the electrical conductivity, due to increased precipitation of intermetallic phases. Despite being a non-heat treatable alloy, AA3003 displays interesting precipitation dynamics and grain recrystallization trends that can be modulated with varying levels of heat treatment, graphene concentrations, and hot extrusion process parameters.

36 MATERIALS SCIENCE↗

Extreme Transverse Magnetoresistance in TiZn 16

Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 10 4 –10 7 % when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe 2 , PtSn 4 , Cd 3 As 2 , and LaSb. The origin of XMR is still hotly debated, possibly with different materials having different (or multiple) explanations. Extreme transverse magnetoresistance of up to 8000% at 14 T and 1.8 K is measured in TiZn 16 , a semimetal with a multitude of bands crossing the Fermi energy, akin to PtSn 4 . The magnetoresistance is suppressed when the magnetic field is rotated to be parallel to the applied current, similar to PtSn 4 and PdSn 4 . The resistance of TiZn 16 follows Kohler's rule, but displays different behavior under an applied transverse field and under a longitudinal magnetic field, suggesting distinct electrical phases. Also present are Shubnikov-de Haas and de Haas-van Alphen oscillations with a transverse magnetic field up to 43 T, showing that despite an insulator-like temperature-resistance curve, charge carriers are still present. This positions TiZn 16 as an interesting addition to the investigation of XMR materials as a multi-band metal with complex Fermi surface geometries.

extreme magnetoresistance↗