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NASA NTRS1983

Sublimation measurements and analysis of high temperature thermoelectric materials and devices

High temperature thermoelectric device sublimation effects are compared for rare earth sulfides, selenides, and state-of-the-art Si-Ge alloys. Although rare earth calcogenides can potentially exhibit superior sublimation characteristics, the state-of-the-art Si-Ge alloy with silicon nitride sublimation-inhibitive coating has been tested to 1000 C. Attention is given to the ceramic electrolyte cells, forming within electrical and thermal insulation, which affect leakage conductance measurements in Si-Ge thermoelectric generators.

Shields, V.↗

NASA NTRS1984

NASA seeking high-power 60-GHz IMPATT diodes

Recent progress in the development of high-power 60 GHz GaAs IMPATT diodes for communication links with high-data-rate satellites is discussed. One of the advantages of GaAs over Si as the material for the diodes are that GaAs is likely to have a higher output and efficiency than Si despite recent advances in Si technology. It is therefore in GaAs technology that research is currently concentrating. Some of the design strategies of the various companies working on the technology are described, including a pill process, MOCVD growth, and the use of diethy zinc as a dopant. Reliability testing of the diodes will be performed by NASA. Some of the alternatives to solid state amplifiers are discussed, including optical and traveling wave tube technology (TWT).

Haugland, E. J.↗

NASA NTRS1984

Investigation of accelerated stress factors and failure/degradation mechanisms in terrestrial solar cells

Research on the reliability of terrestrial solar cells was performed to identify failure/degradation modes affecting solar cells and to relate these to basic physical, chemical, and metallurgical phenomena. Particular concerns addressed were the reliability attributes of individual single crystalline, polycrystalline, and amorphous thin film silicon cells. Results of subjecting different types of crystalline cells to the Clemson accelerated test schedule are given. Preliminary step stress results on one type of thin film amorphous silicon (a:Si) cell indicated that extraneous degradation modes were introduced above 140 C. Also described is development of measurement procedures which are applicable to the reliability testing of a:Si solar cells as well as an approach to achieving the necessary repeatability of fabricating a simulated a:Si reference cell from crystalline silicon photodiodes.

Lathrop, J. W.↗

NASA NTRS1985

Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

Fonash, S. J.↗

NASA NTRS1985

Oxidation resistant slurry coating for carbon-based materials

An oxidation resistant coating is produced on carbon-base materials, and the same processing step effects an infiltration of the substrate with silicon containing material. The process comprises making a slurry of nickel and silicon powders in a nitrocellulose lacquer, spraying onto the graphite or carbon-carbon substrate, and sintering in vacuum to form a fused coating that wets and covers the surface as well as penetrates into the pores of the substrate. Optimum wetting and infiltration occurs in the range of Ni-60 w/o Si to Ni-90 w/o Si with deposited thicknesses of 25-100 mg/sq. cm. Sintering temperatures of about 1200 C to about 1400 C are used, depending on the melting point of the specific coating composition. The sintered coating results in Ni-Si intermetallic phases and SiC, both of which are highly oxidation resistant.

Smialek, J. L.↗

NASA NTRS1984

Layered synthetic microstructure technology considerations for the extreme ultraviolet

It is demonstrated that layered synthetic microstructures (LSMs) can provide mirrors with enhanced normal incidence reflectance in the 300-A spectral region. Experimental results are presented for Pt-Si and Ir-Si structures fabricated by electron-beam deposition at pressures of about 10 to the -6th Torr, and it is shown that the enhancement is realized over a limited bandwidth of 75 A. One potential application of LSMs is their use as coatings on diffraction gratings to enhance normal incidence reflection efficiencies. Preliminary results for the Ir-Si combination on a diffraction grating show that LSMs enhance grating efficiencies in the EUV by a factor of about 3.

Keski-Kuha, R. A. M.↗

NASA NTRS1984

Fracture behavior in silicon

The fracture mechanics of crystalline Si are reviewed, together with known techniques for minimizing the occurences of fracture and/or their effects. The fracture toughness (Kic) of Si varies only 10 percent from cell-to-cell and standard values have been established for different types of crystalline Si cells. A critical flaw size of 10-100 microns has been identified, and also pertains to polycrystalline materials. Chemical polishing is known to double the value of Kic, while edge rounding has no effect. Internal stresses, particularly those caused during ribbon growth, do not exceed 10 percent of Kic. External stresses are imposed by the module hardware and the ambient environment. Multiple contacts reduce the effects of cell fracture and series-parallel wiring in modules in arrays ameliorates the effects of single-cell failures. During manufacturing, maintenance of quality control and removal of sheets displaying aberrations can, depending on the costs and the implementation of the array reliability features, result in arrays delivering any desired level of reliability.

Leipold, M. H.↗

NASA NTRS1984

Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.

Zhu, M. F.↗

NASA NTRS1985

Light-induced effects-impacts to module performance measurements and reliability testing: An overview

The stability of solar cells is a key factor in determining the reliability of photovoltaic modules and is of great interest in the case of solar cells having a new technology which has not yet been fully developed. In particular this question arises with hydrogenated amorphous silicon (a-Si) solar cells because a-Si exhibits reversible light induced changes in its electronic properties, commonly referred to as the Staebler-Wronski effect (SWE). Continuous progress is being made in the peak conversion efficiencies of a-Si solar cells and efficiencies in excess of 11% have been achieved. However, stability is still a problem. ARCO Solar reports results on solar cells which, after over a year's exposure to sunlight, under open circuit conditions, still have about 7% conversion efficiency. Other results show a region of fast degradation for about a month, after which the degradation diminishes rapidly.

Wronski, C. R.↗

NASA NTRS1985

Potential for use of indium phosphide solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗

NASA NTRS1985

Fracture analysis of radial scientific instrument module registration fittings of the space telescope

The space telescope contains various scientific instrument (SI) modules which are mounted to the Focal Plane Structure (FPS) in a statically determinate manner. This is accomplished by using three registration fittings per SI module, one resisting three translations, another resisting two and the third resisting only one. Due to thermal insulating requirements these fittings are complex devices composed of numerous pieces. The structural integrity of these fittings is of great importance to the safety of the orbiter transporting the telescope, so in addition to the stress analyses performed during the design of these components, fracture susceptibility also needs to be considered. The pieces of the registration fittings for the Radial SI Module containing the Wide Field Planetary Camera are examined to determine which would endanger the orbiter if they fractured and what is the likelihood of their fracture. The latter is stated in terms of maximum allowable initial flaw sizes in these pieces.

Springfield, C. W., Jr.↗

NASA NTRS1986

Indium phosphide solar cells: status and prospects for use in space

The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

Weinberg, I.↗

NASA NTRS1986

Economics of polysilicon process: A view from Japan

The production process of solar grade silicon (SOG-Si) through trichlorosilane (TCS) was researched in a program sponsored by New Energy Development Organization (NEDO). The NEDO process consists of the following two steps: TCS production from by-product silicon tetrachloride (STC) and SOG-Si formation from TCS using a fluidized bed reactor. Based on the data obtained during the research program, the manufacturing cost of the NEDO process and other polysilicon manufacturing processes were compared. The manufacturing cost was calculated on the basis of 1000 tons/year production. The cost estimate showed that the cost of producing silicon by all of the new processes is less than the cost by the conventional Siemens process. Using a new process, the cost of producing semiconductor grade silicon was found to be virtually the same with any to the TCS, diclorosilane, and monosilane processes when by-products were recycled. The SOG-Si manufacturing processes using the fluidized bed reactor, which needs further development, shows a greater probablility of cost reduction than the filament processes.

Shimizu, Y.↗

NASA NTRS1985

Reliability and engineering of thin-film photovoltaic modules

Objectives were to: examine thin-film cell attributes that influence module performance and reliability, explore the lessons and applicability of crystalline-silicon module technology to thin-film modules, review the current status of thin-film module technologies, and identify problem areas and needed research. A major need is to separate the effects and resons for reversible degradatin from nonreversible degradation. Amorphous-silicon (a-Si) reliability investigations are focusing on exploratory research investigations, accelerated Arrhenius-type testing of a-Si cells, real-time outdoor exposure testing of a-Si cells, cell failure analysis, and failure mechanism research. Studies included the reduction in strength of glass by high temperature depositions on glass and laser scribing, encapsulation materials development needs, and the testing of modules. The new materials and processes in thin-film modules will require a delinquent reliability effort, including: establishment of mechanism-specific reliability goals; quantification of mechanism parameter dependencies; prediction of expected long-term degradation; identification of cost-effective solutions; and testing and failure analysis of trial solutions.

Royal, E. L.↗

NASA NTRS1985

Acoustic emission monitoring crack propagation in single crystal silicon

The feasibility of acoustic emission (AE) monitoring of cracking and crack propagation in Si semiconductor materials was evaluated experimentally. A double torsion load relaxation method was employed wherein the propagation velocity and the AE levels in precracked (but not notched) boron-doped wafers were recorded simultaneously. A numerical model for the critical stress intensity factor (KIC) was used to relate the crack growth velocity, the instantaneous load and the load relaxation rate. All specimens were monitored with acoustic transducers at six points and examined with SEM after failure. The AE levels reached a peak amplitude of 70 dB at a KIC of 0.997 MNm to the -3/2 for cracking in the 111 plane. No AE was detected before the load reached the KIC, indicating that no subcritical crack growth occurs in Si. The results support the use of AE for monitoring crack propagation in crystal Si.

Chen, C. P.↗

NASA NTRS1985

Investigation of the level difference between sound pressure and sound intensity in an aircraft cabin under different fuselage conditions

Problems in using two-microphone sound-intensity (SI) measurements to measure structural transmission losses are investigated in experiments involving light-aircraft fuselage panels and windows. Both sound pressure (SP) and SI are measured near the passenger and door windows and panels of a single-engine aircraft and with these barriers removed, and the effect of increasing interior acoustic absorption and blocking flanking transmission paths is also tested. The results are presented graphically, and the SP measurements are used to indicate frequency ranges in which the two-microphone technique significantly underestimates SI. It is inferred that flanking paths and interior reverberation must be effectively suppressed in order to obtain accurate transmission-loss measurements.

Atwal, M. S.↗

NASA NTRS1987

Amorphous-Metal-Film Diffusion Barriers

Incorporation of N into Ni/W films reduces reactivity with Si substrate. Paper describes reactions between Si substrates and deposited amorphous Ni/W or Ni/N/W films. Thermal stability of amorphous Ni/W films as diffusion barriers in Si markedly improved by introduction of N into Ni/W films during deposition.

Nicolet, M. A.↗

NASA NTRS1986

The ultraviolet IUE spectrum of the population II horizontal-branch A star HD 109995

Eight SWP and six LWP high dispersion IUE images of the field horizontal-branch A star HD 109995 have been averaged to increase the signal-to-noise ratio. The line density in the UV is greater than that of the optical region, but less than that of comparable population I A stars. Many of the identified lines are those of Fe II. Lines of C I, C II, N I, O I, Mg I, Mg II, Al II, Al III, Si I, Si II, P II, S I, Cl I, Ti II, V II, Cr II, Mn II, Fe I, Co II, Ni II, Zn II, and Ge II are also present. Definite interstellar lines of C II, Mg I, Mg II, Al II, Si II, and Fe II were found.

Adelman, S. J.↗