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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Microwave signals switched or modulated optically. Planar diode with transparent cathode made in BaAs, Si, and InSb versions. Depending on specific configuration and material, such diode used for optical modulation of microwave signal or as infrared detector. Transparent cathode fabricated on GaAs diode so diode illuminates to generate and control short-circuit current.
Over a period of some 5 years Canadian Astronautics Limited (CAL) has developed a system to autonomously manage, and thus prolong the life of, secondary storage batteries. During the development, the system was aimed at the space vehicle application using nickel cadmium batteries, but is expected to be able to enhance the life and performance of any rechargeable electrochemical couple. The system handles the cells of a battery individually and thus avoids the problems of over, and under, drive that inevitably occur in a battery of cells managed by an averaging system. This individual handling also allow cells to be totally bypassed in the event of failure, thus avoiding the losses associated with low capacity, partial short circuit, and the catastrophe of open circuit. The system has an optional capability of managing redundant batteries simultaneously, adding the advantage of on line reconditioning of one battery, while the other maintains the energy storage capability of the overall system. As developed, the system contains a dedicated, redundant, microprocessor, but the capability exists to have this computing capability time shared, or remote, and operating through a data link. As adjuncts to the basic management system CAL has developed high efficiency, polyphase, power regulators for charge and discharge power conditioning.
The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.
A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0 micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.
Results of a study to determine the hot-spot susceptibility of concentrator cells, to provide a hot-spot qualification test for concentrator modules, and to provide guidelines for reducing hot-spot susceptibility are presented. Hot-spot heating occurs in a photovoltaic module when the short-circuit current of a cell is lower than the string operating current forcing the cell into reverse bias with a concurrent power dissipation. Although the basis for the concentrator module hot-spot qualification test is the test developed for flat-plate modules, issues, such as providing cell illumination, introduce additional complexities into the testing procedure. The same general guidelines apply for protecting concentrator modules from hot-spot stressing as apply to flat-plate modules. Therefore, recommendations are made on the number of bypass diodes required per given number of series cells per module or source circuit. In addition, a new method for determining the cell temperature in the laboratory or in the field is discussed.
Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.
Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 1 MeV electrons at fluences up to 1 x 10 to the 15th electrons per square cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150X AM0. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentrations were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 mm x 5 mm with a 4 mm diameter illuminated area.
A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.
In this paper preliminary results on CuInSe2/ZnSe thin film heterojunction photovoltaic devices are presented. High-conductivity ZnSe films were reactively sutter-deposited onto CuInSe2 films and overcoated with ZnO to reduce the sheet resistance. The highest short-circuit current density, as determined from a spectral response weighted for air mass 1.5 global insolation, was 37.4 mA/sq cm. The highest pen-circuit voltage observed was 430 mV.
The global current-voltage relationship for the solar wind-magnetosphere-ionosphere system (SW-M-I) is investigated, restricting the study to strong southward IMF. The dynamo presently identified is on open field lines, and it operates at close to short circuit and at a fraction of the available power output. Control of the dynamo by ionospheric conductivity is discussed. Implications of the simulation results, including the relationship between open and closed field dynamos, the effect of solar wind conditions, the control of reconnection on the bow, the size of the open field line region, and the effects of increased auroral conductivity, are discussed.
Technique records times specific craters formed in targets exposed in space and permits determination of direction in which impacting particles traveled at times of impacts. MOS capacitor is short-circuited by impact of particle striking at high speed. After recovery of targets from space, compositions of impacting particles established through post-flight laboratory analyses of residual materials in craters. On earth technique has industrial and military uses in detection of fragments driven by explosions. Studies of orbital dynamics of particles produced by solid-propellant rocket-motor firings in space made using technique.
Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 37 MeV protons at fluences up to 2.8 x 10 to the 12th protons/sq cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150 x AMO. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short circuit current and irradiance. The cells are 5 x 5 mm with a 4-mm diameter illuminated area.
The challenge of those involved in control-system hardware development is to accommodate an ever-increasing complexity in aircraft control, while limiting the size and weight of the components and improving system reliability. A technology that displays promise towards this end is the area of fiber optics for controls. The primary advantages of employing optical fibers, passive optical sensors, and optically controlled actuators are weight and volume reduction, immunity from electromagnetic effects, superior bandwidth capabilities, and freedom from short circuits and sparking contacts. Since 1975, NASA Lewis has performed in-house, contract, and grant research in fiber optic sensors, high-temperature electro-optic switches, and fly-by-light control-system architecture. Passive optical sensor development is an essential yet challenging area of work and has therefore received much attention during this period. A major effort to develop fly-by-light control-system technology, known as the Fiber-Optic Control System Integration (FOCSI) program, was initiated in 1985 as a cooperative effort between NASA and DOD. Phase 1 of FOCSI, completed in 1986, was aimed at the design of a fiber-optic integrated propulsion/flight control system. Phase 2, yet to be initiated, will provide subcomponent and system development, and a system engine test. In addition to a summary of the benefits of fiber optics, the FOCSI program, sensor advances, and future directions in the NASA Lewis program will be discussed.
This paper examines the ability of the Space Station intermodule ventilation system to maintain centralized control of CO2 removal and O2 supply. The resulting concentration gradients that will arise are calculated by assuming steady state, ideal gas, isothermal conditions, and perfect mixing of air within and between the pressurized elements. In order to estimate the degree of mixing actually obtained for a given ventilation scheme, a program has been developed based on a potential flow solution technique. Preliminary results from this study indicate that substantial short circuiting and recirculation air flow patterns could arise if a simple duct and diffuser air exchange method at the docking port interface were employed.
Calculations of the influence of atmospheric conditions on solar cell short-circuit current (Isc) are made using a recently developed computer model for solar spectral irradiance distribution. The results isolate the dependence of Isc on changes in the spectral irradiance distribution without the direct influence of the total irradiance level. The calculated direct normal irradiance and percent diffuse irradiance are given as a reference to indicate the expected irradiance levels. This method can be applied to the calibration of photovoltaic reference cells. Graphic examples are provided for amorphous silicon and monocrystalline silicon solar cells under direct normal and global normal solar irradiances.
A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0-micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.
The 8-cm x 8-cm gridded back cell being developed for the space station photovoltaic array is described. Modeling studies show that the beginning of life power output of 1.039 W per cell may be met by several different configurations, the most promising being either a fielded or nonfielded 2 ohm-cm planar 8-mil cell. Experimental data are presented which show that a thermal alpha of 0.63 is achievable on a planar cell but at the expense of some Isc. Planar cells are found to possess short-circuit currents which are 9 percent lower than on textured cells due to the loss of near-IR radiation by transmission through the cell. Preliminary modeling shows that the efficiency of the textured cell exceeds the planar cell by approximately 9 percent at 25 C but the situation is reversed in orbit due to the high thermal alpha of textured cells (0.82). Experimental data show that the IR absorption in textured cells can be reduced by about 3 alpha points without loss of efficiency by controlling the doping concentration in the diffused layers, thus increasing the efficiency in orbit.
Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 37-MeV protons at fluences up to 2.8 x 10 to the 12th protons/sq cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150X AM0. Data at one sun and 25 C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 mm x 5 mm with a 4-mm-diameter illuminated area.