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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Ordered nanotubes on a two-dimensional substrate consisting of different material properties

A nanoscale conductor/semiconductor/insulator device includes a substrate with a lattice and a plurality of nanotubes in crystallographic alignment with the lattice at an interface between the plurality of nanotubes and the substrate. Another such device includes a substrate, meandering tracks in the substrate and a plurality of nanotubes adhering to cut-atomic-step edges of the meandering tracks. Methods of making the nanoscale conductor/semiconductor/insulator devices are also disclosed.

Nasseri, Mohsen↗
DOE OSTI2021

Methods for electropolishing and coating aluminum on air and/or moisture sensitive substrates

Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C 6 (H 5−y ,X y )SO 2 CX 3 , where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C 6 (H 5−y ,X y )SO 2 CX 3 ), and (d) AlF 3 -organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm 2 .

Freiderich, John W.↗
DOE OSTI2022

System for roll-to-roll electrocoating of battery electrode coatings onto a foil substrate

The present invention is directed toward a coating system for electrodepositing a battery electrode coating onto a foil substrate, the system comprising a tank structured and arranged to hold an electrodepositable coating composition; a feed roller positioned outside of the tank structured and arranged to feed the foil into the tank; at least one counter electrode positioned inside the tank, the counter electrode in electrical communication with the foil during operation of the system to thereby deposit the battery electrode coating onto the foil; and an in-line foil drier positioned outside the tank structured and arranged to receive the coated foil from the tank. Also disclosed are methods for electrocoating battery electrode coatings onto conductive foil substrates, coated foil substrates, and electrical storage devices comprising the coated foil substrates.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V Devices

In this work, we apply the morphology control of hydride vapor phase epitaxial (HVPE) growth to planarize faceted, non-planar substrates. Controlled spalling is a promising high-throughput substrate reuse technology that could reduce substrate costs for III-V devices; however, the spalling fracture for (100)-oriented GaAs substrates produces a regularly corrugated surface of facets that are 5-20 um in height. We discuss how to planarize these surfaces using only a few minutes of HVPE growth and how to minimize the impact on throughput when integrating faceted wafers into a potential manufacturing process at scale.

epitaxy↗
DOE OSTI2022

Methods for electropolishing and coating aluminum on air and/or moisture sensitive substrates

Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C 6 (H 5-y ,X y )SO 2 CX 3 , where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C 6 (H 5-y ,X y )SO 2 CX 3 ), and (d) AlF 3 -organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm 2 .

Freiderich, John W.↗
DOE OSTI2023

Apparatus and method for producing a crystalline film on a substrate surface

An apparatus and method is provided for coating a surface of a material with a film of porous coordination polymer. A first substrate having a first surface to be coated is positioned in a processing chamber such that the first surface is placed in a substantially opposing relationship to a second surface. In some embodiments, the second surface is provided by a wall of the processing chamber, and in other embodiments the second surface is provided by a second substrate to be coated. The first substrate is held such that a gap exists between the first and second surfaces, and the gap is filled with at least one reaction mixture comprising reagents sufficient to form the crystalline film on at least the first surface. A thin gap (e.g., having a thickness less than 2 mm) between the first and second surfaces is effective for producing a high quality film having a thickness less than 100 μm. Confining the volume of the reaction mixture to a thin layer adjacent the substrate surface significantly reduces problems with sedimentation and concentration control. In some embodiments, the size, shape, or average thickness of the gap is adjusted during formation of the film in response to feedback from at least one film growth monitor.

Britt, David K.↗
DOE OSTI2024

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point. AlxGa1-xN ranks high among candidate materials, having bipolar dopability, thermal and chemical stability and an ultra-wide bandgap. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees C. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers. (1) R. J. in a face-to-face configuration, as illustrated in the schematic at left. Kaplar et al 2017, ECS J. Solid State Sci. Technol. 6 Q3061; (2) D. M. Roberts et al 2022, https://arxiv.org/abs/2208.11769; (3) T. Aizawa et al 2008, J Crys Growth 310, 1 22; (4) R. Liu et al 2002, Appl. Phys. Lett. 81, 3182-3184.

ENGINEERING↗
DOE OSTI2020

Mechanistic Studies on the Insertion of Carbonyl Substrates into Cu-H: Different Rate-Limiting Steps as a Function of Electrophilicity

In this paper, we report mechanistic studies on the insertion reactions of [(NHC)Cu(H)] 2 complexes with carbonyl substrates by UV-vis and 1 H NMR spectroscopic kinetic studies, H/D isotopic labelling, and X-ray crystallography. The results of these comprehensive studies show that the insertion of Cu-H with an aldehyde, ketone, activated ester/amide, and unactivated amide consist of two different rate limiting steps: the formation of Cu-H monomer from Cu-H dimer for more electrophilic substrates and hydride transfer from a transient Cu-H monomer for less electrophilic substrates. We also report spectroscopic and crystallographic characterization of rare Cu-hemiacetalate and Cu-hemiaminalate moieties from the insertion of an ester and amide into the Cu-H bond.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates

Carbon (C) is a common impurity that acts as a compensator within GaN grown via metal–organic chemical vapor deposition (MOCVD). Reducing C in GaN will help reduce the compensation level and provide a route to achieve GaN with reliably low effective doping for high-power device applications. GaN grown with fast growth rates on bulk GaN with various offcut angles via conventional-MOCVD (C-MOCVD) and laser-assisted MOCVD (LA-MOCVD) is compared and analyzed. C-incorporation effects are compared through quantitative secondary-ion mass spectroscopy analysis in GaN grown on GaN substrate with offcut angles of 4° and 0.3° toward m-plane over a wide range of growth rates by C-MOCVD and LA-MOCVD. For both growth techniques investigated, a significant reduction in C-incorporation is observed when a high-offcut-angle (4°) substrate is used as compared to a lower-offcut-angle (0.3°) substrate. Furthermore, with C-MOCVD, at the fastest growth condition investigated (17.26 μm h −1 at 0.3°-offcut, 15.25 μm h −1 at 4°-offcut), a reduction in [C] by 21.2X is observed with an increase in the offcut angle from 0.3° to 4°. A 82.6X reduction in [C] is observed with the similar fast growth condition via LA-MOCVD on GaN with 4° offcut angle (9.78 μm h −1 ) as compared to C-MOCVD at 0.3° offcut angle (17.26 μm h −1 ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Underlying Substrate Effect on Electrochemical Activity for Hydrogen Evolution Reaction with Low‐Platinum‐Loaded Catalysts

Platinum is known as the best catalyst for the hydrogen evolution reaction (HER) but the scarcity and high cost of Pt limit its widespread applicability. Herein, the role of the underlying substrate on the HER activity of dispersed Pt atoms is uncovered. A direct current magnetron sputtering technique is utilized to deposit transition metal (TM) thin films of W, Ti, and Ta as underlying substrates for extremely low loading of Pt (<1.5 at%). The electrocatalytic performance of as‐synthesized samples for the HER is examined in both alkali and acidic media. The results show that despite the low loading of Pt, the Pt/TM catalysts produce hydrogen at a rate comparable to that of pristine bulk Pt. Pt/TM catalysts also display good stability with less than 5% decay in performance after 10 h of continuous HER operation. Based on the computational study, the excellent performance is attributed to the modified electronic properties of the Pt atoms, offering ideal binding energy for HER due to interaction with the underlying substrates. This work provides a robust and industry‐friendly route toward designing efficient catalytic systems for important electrochemical reactions such as HER and others.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

High-Voltage Superconducting Fault Current Limiters Based on High-Diffusivity Dielectric Substrates

High-temperature superconducting (HTS) tapes currently used for the manufacture of resistive fault current limiters use metallic substrates upon which the HTS film is grown. Because the alloys used for these substrates, such as Hastelloy, have a rather high resistivity and low thermal conductivity, the HTS film must be protected by a more conducting metallic layer acting as a shunt to avoid burn out during a fault. This shunt layer limits severely the electric field generated during the fault to values smaller than 100 V/m. A long length of tape is then necessary to achieve the desired high voltage. We show here that by using a high thermal diffusivity dielectric substrate such as sapphire, it is possible to obtain much higher electric fields of up to several kilovolts per meter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Special Features of the Structure of Titanium Nitride Coatings in Substrate Surface Cuts

Elemental compositions and structure-phase states of titanium nitride coatings on the flat surface and in a cut of substrate from 10Cr18Ni10Ti steel are investigated by the methods of x-ray microspectral analysis, Auger electron spectroscopy, and dark-field electron microscopy analysis of the bending-torsion of the crystal lattice. It is established that the coating in the cut, unlike the coating on the frontal surface, has a modified elemental composition and a two-layer structure whose special features and thicknesses change with distance from the sample surface. It is shown that these changes are caused by phase transformations, decreased number of defects, dispersion of layer structures, and increased concentration of impurities with increasing distance from the substrate surface. Based on the results obtained, possible conditions for coating structure formation in the cut of the substrate surface are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Wetting Behavior of Calcium Ferrite Slags on Cristobalite Substrates

Calcium ferrite (CF) is a significant intermediate adhesive phase in high-basicity sinters. The wettability between calcium ferrite (CF) and gangue plays an important role in the assimilation process. The wettability of CF-based slags, in which a constant amount (2 mass pct.) of Al{sub 2}O{sub 3}, MgO, SiO{sub 2}, and TiO{sub 2} was added, on solid SiO{sub 2} (cristobalite) substrates at 1523 K (1250 °C) was investigated. The interfacial microstructure and spreading mechanisms were discussed for each sample. All the tested slag samples exhibited good wettability on the SiO{sub 2} substrate. The initial apparent contact angles were in the range of 20 to 50 deg, while the final apparent contact angles were ~ 5 deg. The wetting process could be divided into three stages on the basis of the change in diameter, namely the “linear spreading” stage, “spreading rate reduction” stage, and “wetting equilibrium” stage. It was found that the CF-SiO{sub 2} wetting system exhibits dissolutive wetting and the dissolution of SiO{sub 2} into slag influences its spreading process. The spreading rate increases with a decrease in the ratio of viscosity to interfacial tension, which is a result of the addition of Al{sub 2}O{sub 3}, MgO, SiO{sub 2}, and TiO{sub 2}. After cooling, a deep corrosion pit was formed in the substrate and a diffusion layer was generated in front of the residual slag zone; further, some SiO{sub 2} and Fe{sub 2}O{sub 3} solid solutions precipitated in the slag.

36 MATERIALS SCIENCE↗
DOE OSTI2018

On Development and Wear Behavior of Microwave-Processed Functionally Graded Ni-SiC Clads on SS-304 Substrate

In this study, the functionally graded Ni-SiC claddings with gradual change in SiC contents were deposited on SS-304 substrate using microwave hybrid heating technique. Experimental trials were carried out inside a multimode domestic microwave device at 2.45 GHz and 900 W. The optimal exposure time of 900 W microwave power was varied with compositional gradient, and it was from 300 to 360 s. The developed functionally graded clad (FGC) was characterized by SEM/EDS, XRD and Vicker’s micro-hardness. Microstructural analysis results revealed that the FGC of approximately 2 mm thickness was developed and was free from any type of interfacial cracks and visible porosity. The maximum micro-hardness was at the top FGC layer, and its value was 1025 ± 30 HV. Three types of single-layer claddings were also developed to compare the tribological behavior of FGC. FGC exhibited 32 and 1.2 times more wear resistance than SS-304 substrate and Ni + 30% SiC layer, respectively. In the case of FGC, wear mainly occurs due to debonding of carbide particles from the matrix, while plastic deformation and strong abrasion are responsible for material loss in the case of the SS-304 substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Promising Hard Carbon Coatings on Cu Substrates: Corrosion and Tribological Performance with Theoretical Aspect

Protecting the surface of metals and alloys against corrosion and wear is of abundant importance owing to their widespread applications. In the present work, we report the improved anticorrosion and tribo-mechanical performance of copper (Cu) by a hard carbon (HC) coating synthesized in different pyrolysis temperature. Structural and surface characterization with roughness measurements was systematically investigated using various techniques. Effect of pyrolysis temperature on the corrosion behavior of coated Cu substrates in 0.6 M NaCl solution was evaluated via electrochemical impedance spectroscopy, potentiodynamic polarization. Pin-on-disk wear test of coated Cu substrate showed the influence of the pyrolysis temperature on the wear resistance performance of the HC coatings. According to the obtained results, it could be concluded that the HC coatings synthesized at 1100 °C revealed an enhanced comprehensive performance, revealing their possible utilization as a protective coating for Cu substrates in chloride environment. Monte Carlo simulations have been utilized to elucidate the interaction between the Cu surface and HC coatings.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of the Soldering Atmosphere on the Wettability Between Sn4.0Ag0.5Cu (in wt.%) Lead-Free Solder Paste and Various Substrates

The “degree of wetting,” which is related to the contact angle (θ) between the molten solder and the substrate, is a useful parameter on the solderability process control. The contact angle, however, is strongly dependent on the type of substrate surface finish and used atmosphere (inert or non-inert). Furthermore, the surface tension, being an important parameter on the solderability process and performance, can also be achieved if the contact angle is known. In this study, the SAC405 [Sn4.0Ag0.5Cu (in wt.%)] solder paste contact angle was measured, by the “sessile drop” method, as a function of the temperature, surface pad finish and used atmosphere. The results are discussed, and the contact angles obtained for the different conditions are compared and discussed. Then, the surface tension (experimental) was obtained from the measured contact angle and compared with the obtained by using computation models (theoretical). The experiments performed in high vacuum conditions, i.e., low oxygen content, over a temperature range, allowed the evaluation and understanding of the surface oxides layers role on the solder wettability. The present study shows that in the soldering process, even in an inert atmosphere, usually used in industry, occurs the formation of superficial oxides, over the liquid solder and/or at the pad surfaces, that strongly affects the solder paste wettability, specially with Sn and OSP (organic solderability preservative) finishing. Differences in contact angle of ≥ 10° were determined between the two types of used atmospheres. The experimental surface tension and theoretical surface tension obtained, for the NiAu substrate type, present good correlation. The lower contact angle values were obtained for the NiAu and OSP finish types, independently of the atmosphere type.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Microstructure and Friction-Wear Behavior of Multi-arc Ion Plating TiAlNC Ceramic Coating on WC-6%Co Substrate

Nanocomposite coating could be used for machining tools, which can be used for cutting, drilling, milling, whetting, profiling, honing and superfinishing of various materials with high productivity. In this work, the TiAlNC ceramic coating was prepared by multi-arc ion plating method on WC-6%Co substrate. The microstructure and morphology of the coating were observed by scanning electron microscopy and transmission electron microscopy. The phase and chemical composition of the coating were determined by x-ray diffraction and x-ray energy-dispersive spectroscopy, respectively. The adhesive force of the coating was measured by a scratch tester, at the same time the friction-wear behavior of the coating was studied. The results show that there were TiN and (Ti,Al)(N,C) two phases, and there was the coexistence of amorphous and nanocrystalline in the coating. The chemical composition of the coating was composed of 20 ± 9 at.% Ti, 16 ± 5 at.% Al, 39 ± 5 at.% N and 25 ± 10 at.% C. The thickness of the coating was about 4.5 μm. The average root mean square value of the surface roughness was 225 ± 16 nm. A critical force for coating failure in scratch testing was about 25 N. The friction coefficients of the substrate and the coating were 0.55 and 0.35, respectively. The ceramic coating could improve the wear resistance of the substrate.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Crystal structure and biochemical features of dye-decolorizing peroxidase YfeX from Escherichia coli O157 Asp{sup 143} and Arg{sup 232} play divergent roles toward different substrates

YfeX from Escherichia coli O157 is a bacterial dye-decolorizing peroxidase that represents both dye-decoloring activity and typical peroxidase activity. We reported the crystal structure of YfeX bound to heme at 2.09 Å resolution. The YfeX monomer resembles a ferredoxin-like fold and contains two domains. The three conserved residues surrounding the heme group are His{sup 215}, Asp{sup 143} and Arg{sup 232}. His{sup 215} functions as the proximal axial ligand of the heme iron atom. Biochemical data show that the catalytic significance of the conserved Asp{sup 143} and Arg{sup 232} depends on the substrate types and that YfeX may adopt various catalytic mechanisms toward divergent substrates. In addition, it is observed that an access tunnel spans from the protein molecular surface to the heme distal region, it serves as the passageway for the entrance and binding of the H{sub 2}O{sub 2}. - Highlights: • We determined the crystal structure of YfeX bound to heme at 2.09 Å resolution. • The conserved Asp{sup 143} and Arg{sup 232} play different roles toward divergent substrates. • The H{sub 2}O{sub 2} access tunnel spans from the protein molecular surface to the heme distal region.

60 APPLIED LIFE SCIENCES↗