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DOE OSTI2026

Mechanistic Understanding of Interphase-driven Aging in Silicon Anodes

Conventional solid electrolyte interphases (SEIs) strongly adhere to micro-silicon (µ-Si) and crack under volume changes, causing poor cycling performance. Nano-silicon improves cycling performance but remains costly with limited calendar life. Here potentiostatic ageing tests demonstrate that both calendar and cycle ageing are governed by SEI cracking and dissolution with different relative contributions. When the system is not dominated by SEI dissolution, the relative calendar life of Si anodes could correlates positively with their cycle life. LiF-rich SEI that enables long cycle life in µ-Si is therefore expected to enhance calendar life as well. Using this framework, we screened electrolytes, SEIs and electrodes and validated them with full-cell storage. LiF-rich SEI minimizes cracking and dissolution, enabling μ-Si to achieve excellent calendar life, whereas nano-silicon suffers from SEI dissolution and needs reduced electrolyte–electrode contact for better calendar life. This work clarifies calendar-ageing behaviour and accelerates electrolytes and SEI development for long-life Si anodes.

Johnson, Christopher S.↗

DOE OSTI2021

Thermal stability and diffusion characteristics of ultrathin amorphous carbon films grown on crystalline and nitrogenated silicon substrates by filtered cathodic vacuum arc deposition

Amorphous carbon (a-C) films are widely used as protective overcoats in many technology sectors, principally due to their excellent thermophysical properties and chemical inertness. The growth and thermal stability of sub-5-nm-thick a-C films synthesized by filtered cathodic vacuum arc on pure (crystalline) and nitrogenated (amorphous) silicon substrate surfaces were investigated in this study. Samples of a-C/Si and a-C/SiN x /Si stacks were thermally annealed for various durations and subsequently characterized by high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The TEM images confirmed the continuity and uniformity of the a-C films and the 5-nm-thick SiN x underlayer formed by silicon nitrogenation using radio-frequency sputtering. The EELS analysis of cross-sectional samples revealed the thermal stability of the a-C films and the efficacy of the SiNx underlayer to prevent carbon migration into the silicon substrate, even after prolonged heating. The obtained results provide insight into the important attributes of an underlayer in heated multilayered media for preventing elemental intermixing with the substrate, while preserving the structural stability of the a-C film at the stack surface. An important contribution of this investigation is the establishment of an experimental framework for accurately assessing the thermal stability and elemental diffusion in layered microstructures exposed to elevated temperatures.

42 ENGINEERING↗

DOE OSTI2021

Biomass-Derived Polymeric Binders in Silicon Anodes for Battery Energy Storage Applications

The demand for portable electronic devices has increased rapidly during the past decade, and has driven a concordant growth in battery production. Since their development as a commercial energy storage solution in the 1990s, lithium-ion batteries (LIBs) have attracted significant attention in both science and industry due to their long cycle life, high energy density, low self-discharge rate, and high working voltage. Production of LIBs requires large amounts of a polymeric binder – commonly polyvinylidene difluoride (PVDF) – for processing and performance purposes. However, since this material is petrochemically-derived, it is far from “green” or sustainable. On the other hand, polymers and their building blocks are found widely throughout nature and can be renewably sourced from biomass at low cost; therefore, replacing PVDF with biomass-derived binders is a promising approach to reduce the environmental footprint of LIBs. Additionally, polymer binders play a critical role in next-generation battery performance. For instance, silicon (Si) is a promising high-capacity anode material for LIBs because of its high theoretical capacity (4200 mA h g –1 ), low working potential, and high abundance in Earth's crust. However, its huge volume change during charge/discharge tends to result in a shortened cycle life, since conventional binders interact only weakly with silicon's native surface and cannot maintain long-term integrity of the electrode. Naturally derived polymers have found better success in this role due to their high structural advantages. In this review, we summarize recent developments in silicon anode binders derived from various biomass sources, with a focus on polymer properties and their effect on battery performance. Further, we propose various perspectives based on our own assessment of these works, and provide a brief commentary on the future outlook of the field.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Strain effects on Auger–Meitner recombination in silicon

We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger–Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect on the AMR rate. For most AMR processes, the application of strain increases the AMR rate. However, the recombination rate for the AMR process involving two holes and one electron is suppressed by 38% under tensile strain. We further analyze the specific phonon contributions that mediate the phonon-assisted AMR mechanism, demonstrating the increased anisotropy under strain. In conclusion, our results indicate that the application of tensile strain increases the lifetime of minority electron carriers in p-type silicon and can be leveraged to improve the efficiency of silicon devices.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Optical and microstructural studies of erbium-doped TiO 2 thin films on silicon, SrTiO 3 , and sapphire

Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped TiO 2 is an attractive candidate: the Er 3+ optical transition is compatible with C-band optical fiber communications, while TiO 2 is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped TiO 2 thin films grown via molecular beam deposition on silicon, SrTiO 3 , and sapphire substrates, we have explored the impact of polycrystallinity and microstructure on the optical properties of the Er emission. Comparing polycrystalline TiO 2 (rutile)/Si with single-crystalline TiO 2 (rutile)/r-sapphire and polycrystalline TiO 2 (anatase)/Si with single-crystalline TiO 2 (anatase)/SrTiO 3 , we observe that the inhomogeneous linewidth (Γ inh ) of the most prominent peak in the Er spectrum (the Y 1 –Z 1 transition, 1520 and 1533 nm in rutile and anatase TiO 2 ) is significantly narrower in the polycrystalline case. This implies a relative insensitivity to extended structural defects and grain boundaries in such films (as opposed to, e.g., point defects). We show that the growth of an undoped, underlying TiO 2 buffer on Si can reduce Γ inh by a factor of 4–5. Expectedly, Γ inh also reduces with decreasing Er concentrations: we observe a ∼2 order of magnitude reduction from ∼1000 ppm Er to ∼10 ppm Er. Γ inh then gets limited to a residual value of ∼5 GHz that is insensitive to further reduction in the Er concentration. Based upon the above results, we argue that the optical properties in these thin films are limited by the presence of high “grown-in” point defect concentrations.

Chemical elements↗

DOE OSTI2025

Spontaneous generation of athermal phonon bursts within bulk silicon causing excess noise, low energy background events, and quasiparticle poisoning in superconducting sensors

Solid state phonon detectors used in the search for dark matter and coherent neutrino nucleus interactions (CE $v$ NS) require excellent energy resolution (eV-scale or below) and low backgrounds. An unknown source of phonon bursts, the low energy excess (LEE), dominates other above-threshold backgrounds and generates excess shot noise from subthreshold bursts. Here, in this paper, we measure these phonon bursts for 12 days after cooldown in two nearly identical 1 cm 2 silicon detectors that differ only in the thickness of their substrate (1 vs 4 mm thick). We find that both the channel-correlated shot noise and near-threshold shared LEE relax with time since cooldown. Additionally, both the correlated shot noise and LEE rates scale linearly with substrate thickness. When combined with previous measurements of other silicon phonon detectors with different substrate geometries and mechanical support strategies, these measurements strongly suggest that the dominant source of both above and below threshold LEE is the bulk substrate. By monitoring the relation between bias power and excess phonon shot noise, we estimate that the energy scale for subthreshold noise events is 0.68 ± 0.38 meV. In our final dataset, we report a world-leading energy resolution of 258.5 ± 0.4 meV in the 1 mm thick detector. Simple calculations suggest that these silicon substrate phonon bursts are likely a significant source of quasiparticle poisoning in superconducting qubits operated in well shielded and vibration free environments.

Chang, C. L. [Argonne National Laboratory 1 , 9700↗

DOE OSTI2020

Experimental study of different silicon sensor options for the upgrade of the CMS Outer Tracker

During the high-luminosity phase of the LHC (HL-LHC), planned to start in 2027, the accelerator is expected to deliver an instantaneous peak luminosity of up to 7.5×10 34 cm –2 s –1 . A total integrated luminosity of 3000 or even 4000 fb –1 is foreseen to be delivered to the general purpose detectors ATLAS and CMS over a decade, thereby increasing the discovery potential of the LHC experiments significantly. The CMS detector will undergo a major upgrade for the HL-LHC,with entirely new tracking detectors consisting of an Outer Tracker and Inner Tracker. However, the new tracking system will be exposed to a significantly higher radiation than the current tracker, requiring new radiation-hard sensors. CMS initiated an extensive irradiation and measurement campaign starting in 2009 to systematically compare the properties of different silicon materials and design choices for the Outer Tracker sensors. Several test structures and sensors were designed and implemented on 18 different combinations of wafer materials, thicknesses, and production technologies. The devices were electrically characterized before and after irradiation with neutrons,and with protons of different energies, with fluences corresponding to those expected at different radii of the CMS Outer Tracker after 3000 fb –1 . The tests performed include studies with β sources, lasers, and beam scans. This paper compares the performance of different options for the HL-LHC silicon sensors with a focus on silicon bulk material and thickness.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2020

Evaluation of radiation hardness of High-Voltage silicon vertical JFETs

In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2 * 10 15 neq/cm 2 along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). Overall, this paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.

47 OTHER INSTRUMENTATION↗

DOE OSTI2021

Silicon strip defects and their impact on electrical performance of readout electronics

Abstract In preparation for the High Luminosity LHC (HL-LHC) runs, the ATLAS inner detector will be completely replaced with an all silicon Inner Tracker (ITk). Hybrid silicon pixel modules will be used for the innermost tracking layers, and silicon micro-strip detectors will be used the outer layers of the tracker. During the production of the detector, the sensors, readout electronics, and other components will undergo a series of quality control (QC) and quality assurance tests. Defects in the fabrication of the sensors will be flagged early in the manufacturer's and ATLAS QC tests. A study of the influence of sensor defects was performed to assess the characteristics of these defects in completed modules, and whether any defect posed a risk to the operation of the front-end readout electronics. All defects were found to have no impact on the performance of the front-end readout electronics for healthy amplifier channels, and defects that short the coupling between the strip implant and the metal readout electrode were only noticeable for strip leakage currents in excess of 250 nA, beyond the end-of-life currents expected for most sensors at the HL-LHC.

Instruments & Instrumentation↗

DOE OSTI2021

Construction and commissioning of CMS CE prototype silicon modules

As part of its HL-LHC upgrade program, the CMS collaboration is developing a High Granularity Calorimeter (CE) to replace the existing endcap calorimeters. The CE is a sampling calorimeter with unprecedented transverse and longitudinal readout for both electromagnetic (CEE) and hadronic (CE-H) compartments. The calorimeter will be built with ~30,000 hexagonal silicon modules. Prototype modules have been constructed with 6-inch hexagonal silicon sensors with cell areas of 1.1 cm 2 , and the SKIROC2-CMS readout ASIC. Beam tests of different sampling configurations were conducted with the prototype modules at DESY and CERN in 2017 and 2018. This paper describes the construction and commissioning of the CE calorimeter prototype, the silicon modules used in the construction, their basic performance, and the methods used for their calibration.

Calorimeters↗

DOE OSTI2021

Measurement of the bulk radioactive contamination of detector-grade silicon with DAMIC at SNOLAB

We present measurements of bulk radiocontaminants in the high-resistivity silicon CCDs from the DAMIC experiment at SNOLAB. We utilize the exquisite spatial resolution of CCDs to discriminate between α and β decays, and to search with high efficiency for the spatially-correlated decays of various radioisotope sequences. Using spatially-correlated β decays, we measure a bulk radioactive contamination of 32 Si in the CCDs of 140 ± 30 μBq/kg, and place an upper limit on bulk 210 Pb of < 160 μBq/kg. Using similar analyses of spatially-correlated α and β decays, we set upper limits of < 11 μBq/kg (0.9 ppt) on 238 U and < 7.3 μBq/kg (1.8 ppt) on 232 Th in the bulk silicon. The ability of DAMIC CCDs to identify and reject spatially-coincident backgrounds, particularly from 32 Si, has significant implications for the next generation of silicon-based dark matter experiments, where β's from 32 Si decay will likely be a dominant background.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2021

Selection of the silicon sensor thickness for the Phase-2 upgrade of the CMS Outer Tracker

During the operation of the CMS experiment at the High-Luminosity LHC the silicon sensors of the Phase-2 Outer Tracker will be exposed to radiation levels that could potentially deteriorate their performance. Previous studies had determined that planar float zone silicon with n-doped strips on a p-doped substrate was preferred over p-doped strips on an n-doped substrate. The last step in evaluating the optimal design for the mass production of about 200 m$^{2}$ of silicon sensors was to compare sensors of baseline thickness (about 300 μm) to thinned sensors (about 240 μm), which promised several benefits at high radiation levels because of the higher electric fields at the same bias voltage. This study provides a direct comparison of these two thicknesses in terms of sensor characteristics as well as charge collection and hit efficiency for fluences up to 1.5 × 10$^{15}$ n$_{eq}$/cm$^{2}$. The measurement results demonstrate that sensors with about 300 μm thickness will ensure excellent tracking performance even at the highest considered fluence levels expected for the Phase-2 Outer Tracker.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2023

Neutron irradiation and electrical characterisation of the first 8” silicon pad sensor prototypes for the CMS calorimeter endcap upgrade

As part of its HL-LHC upgrade program, the CMS collaboration is replacing its existing endcap calorimeters with a high-granularity calorimeter (CE). The new calorimeter is a sampling calorimeter with unprecedented transverse and longitudinal readout for both electromagnetic and hadronic compartments. Due to its compactness, intrinsic time resolution, and radiation hardness, silicon has been chosen as active material for the regions exposed to higher radiation levels. The silicon sensors are fabricated as 20 cm (8”) wide hexagonal wafers and are segmented into several hundred pads which are read out individually. As part of the sensor qualification strategy, 8” sensor irradiation with neutrons has been conducted at the Rhode Island Nuclear Science Center (RINSC) and followed by their electrical characterisation in 2020-21. The completion of this important milestone in the CE's R&D program is documented in this paper and it provides detailed account of the associated infrastructure and procedures.The results on the electrical properties of the irradiated CE silicon sensors are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

Characterization of Silicon Photomultiplier Photon Detection Efficiency at Liquid Nitrogen Temperature

The detection of individual photons at cryogenic temperatures is of interest to many experiments searching for physics beyond the Standard Model. Silicon photomultipliers (SiPMs) are often deployed in liquid argon or liquid xenon to detect scintillation light either directly or after it has been wavelength-shifted. Maximizing the photon detection efficiency (PDE) of the SiPMs used in these experiments optimizes the sensitivity to new physics; however, the PDEs of commercial SiPMs, although well known at room temperature, are not well characterized at the cryogenic temperatures at which many experiments operate them. Here we present results from an experimental setup that measures the photon detection efficiencies of silicon photomultipliers at liquid nitrogen temperature, 77 K. Results from a KETEK PM3325-WB-D0 and a Hamamatsu S13360-3050CS silicon photomultiplier — of R&D interest to the LEGEND experiment — exhibit a decrease in photon detection efficiency greater than 20% at liquid nitrogen temperature relative to room temperature for 562 nm light.

Cryogenic detectors↗

DOE OSTI2020

1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

Abstract This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.

Dong, Bozhang (ORCID:0000000158266723)↗

DOE OSTI2020

Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4$\textit{H}$-SiC

Silicon-vacancy qubits in silicon carbide ( Si C ) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4$\textit{H}$-SiC. We apply density-functional theory beyond the Born-Oppenheimer approximation to describe the temperature-dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. Finally, we also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Backscatter-Immune Injection-Locked Brillouin Laser in Silicon

As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser’s frequency and phase can be controlled by an injected signal. Because of its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection-locking dynamics remain relatively untapped—despite significant potential for technological and scientific impact. In this work, we demonstrate injection locking in a silicon photonic Brillouin laser. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection-locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and backscatter immunity in an all-silicon system. This device physics opens the door to strategies for phase-noise reduction, low-noise amplification, and backscatter immunity in silicon photonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Quantum Emitter Formation Dynamics and Probing of Radiation-Induced Atomic Disorder in Silicon

Near-infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical-access quantum memories, and sensing. We access ensemble G-color-center formation dynamics and radiation-induced atomic disorder in silicon for a series of megaelectronvolt proton-flux conditions. The photoluminescence results reveal that the G centers are formed more efficiently by pulsed-proton irradiation than by continuous-wave proton irradiation. The enhanced transient excitations and dynamic annealing within nanoseconds allows optimization of the ratio of G-center formation to nonradiative defect accumulation. The G centers preserve narrow line widths of about 0.1 nm when they are generated by moderate pulsed-proton fluences, while the line width broadens significantly as the pulsed-proton fluence increases. This implies vacancy or interstitial clustering by overlapping collision cascades. The tracking of G-center properties for a series of irradiation conditions enables sensitive probing of atomic disorder, serving as a complementary analytical method for sensing damage accumulation. Aided by ab initio electronic structure calculations, we provide insight into the atomic disorder induced inhomogeneous broadening by introducing vacancies, silicon interstitials, and oriented strain fields in the vicinity of a G center. A vacancy leads to a tensile strain and can result in either a red shift or a blue shift of the G-center emission, depending on its position relative to the G center. Meanwhile, Si interstitials lead to compressive strain, which results in a monotonic red shift. In conclusion, high-flux and tunable ion pulses enable the exploration of the fundamental dynamics of radiation-induced defects as well as methods for the optimization of G-center formation and qubit synthesis for quantum information processing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗