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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Potential effects of low-dose average CT on cardiac implantable electronic devices

Background: Average CT has been shown to be more accurate than conventional helical CT in quantitation of the PET data. The risk of CT irradiation of a cardiac implantable electronic device (CIED) causing an adverse event is low and is generally outweighed by the clinical benefit of a medically indicated examination. However, irradiation of CIED over one breath cycle in cine CT scan for average CT could impose risks on a patient who is pacing dependent. The purpose of this study was to demonstrate that low-dose average CT can be safe for CIED. Methods: A Medtronic CIED of model Protecta VR was submerged in a saline bath for a series of 4-s cine CT scans on a GE CT scanner programmed to deliver a 2-cm-wide radiation at a dose rate of 0.9 to 41.2 mGy/s to the CIED. The number of over-sensings was recorded as the interference of radiation to the CIED. Results: Dose rates ≥ 1.9 mGy/s caused over-sensing. The higher the dose rate, the more over-sensings there were. The lowest dose rate of 0.9 mGy/s did not cause any over-sensing. Conclusions: Low-dose average CT at 0.9 mGy/s can be safe for a CIED patient who is pacing dependent.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2021

Formation of pyrophosphates across grain boundaries induces the formation of mismatched but oriented interfaces in silver phosphate polypods

The interfaces and their misfit defects determine the materials properties for a wide range of applications, such as electronic devices, photocatalysis, and mechanical engineering, etc. However, current understanding of atomic interfacial structures is limited. Here we discover a special interfacial structure, mismatched but oriented interface via two distinct facets. Transmission and scanning electron microscopy results suggest that, in Ag 3 PO 4 polypods structures, interfaces of {1 0 0} and {1 1 0}, ({1 0 0}/(1 1 0}), {1 0 0}/{1 1 1}, {1 1 0}/{1 1 1}, and {1 0 0}/{1 0 0}, etc., have a certain orientation relationship, corresponding to the energy minima and coincident site lattice of interfacial atoms as demonstrated by molecular dynamics simulations. Density functional theory demonstrates that the formation of pyrophosphate and/or phosphates rotation to bond across the interface compensate the lattice mismatch at the interfaces, as well as deformations of Ag-O bonds. Furthermore, our work opens up a new avenue for a much wider range of interfacial structures, allow for a higher diversity of structures, and shine light on tailoring crystal structures, morphologies, and the resulting properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Infrared plasmonics: STEM-EELS characterization of Fabry-Pérot resonance damping in gold nanowires

Materials possessing strong midinfrared responses are of current interest because of their potential application to long-wavelength metamaterials, photonic devices, molecular detection, and catalysis. In this work, we utilize high-energy resolution (80 cm -1 , 10 meV) electron-energy-loss spectroscopy (EELS) in a monochromated and aberration-corrected scanning transmission electron microscope (STEM) to resolve multipolar surface plasmon resonances (SPRs), sometimes called Fabry-Pérot (FP) resonances, in gold nanowires with mode energies spanning from ~1000 to 8000 cm -1 . STEM-EELS provides access to these mid- to near-IR responses in a single acquisition, avoiding the difficulties inherent in obtaining the same data using near-field optical techniques. The experimentally measured FP resonance energies and linewidths, together with analytical modeling and full-wave numerical electrodynamics simulations, provide a comprehensive picture of the radiative and intrinsic contributions to the total damping rates. We find some FP modes with dephasing times >60fs, which is almost twice the longest previously reported plasmon dephasing time for individual Au nanoparticles in the infrared. The long dephasing times and the broad tunability of the FP resonance energies throughout the infrared region suggest additional opportunities for harnessing infrared plasmonic energy before dephasing occurs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Integration of molecular-layer-deposited aluminum alkoxide interlayers into inorganic nanolaminate barriers for encapsulation of organic electronics with improved stress resistance

Diffusion barrier stacks for the encapsulation of organic electronics made from inorganic nanolaminates of Al{sub 2}O{sub 3} and TiO{sub 2} with aluminum alkoxide interlayers have been deposited by atomic layer deposition (ALD) and molecular layer deposition (MLD). As a part of the MLD process development, the deposition of aluminum alkoxide with low a density of about 1.7 g/cm{sup 3} was verified. The ALD/MLD diffusion barrier stack is meant to be deposited either on a polymer film, creating a flexible barrier substrate, or on top of a device on glass, creating a thin-film encapsulation. In order to measure the water vapor transmission rate (WVTR) through the barrier, the device is replaced by a calcium layer acting as a water sensor in an electrical calcium test. For the barrier stack applied as thin-film encapsulation on glass substrates, high resolution scanning electron microscopy investigations indicate that the inorganic nanolaminates without MLD interlayers are brittle as they crack easily upon the stress induced by the corroding calcium below. The introduction of up to three MLD interlayers of 12 nm each into the 48 nm barrier film laminate successfully mitigates stress issues and prevents the barrier from cracking. Using the three MLD interlayer configurations on glass, WVTRs of as low as 10{sup −5} g/m{sup 2}/d are measured at 38 °C and 32% relative humidity. On polymer barrier substrates, the calcium is evaporated onto the barrier stack and encapsulated with a cavity glass. In this configuration, the corroding calcium has space for expansion and gas release without affecting the underlying barrier film. In consequence, a WVTR of about 3 × 10{sup −3} g/m{sup 2}/d is measured for all samples independently of the number of MLD interlayers. In conclusion, a stabilization and preservation of the ALD barrier film against mechanical stress is achieved by the introduction of MLD interlayers into the inorganic nanolaminate.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Simulation Of Microtearing Turbulence In NSTX

Thermal energy confinement times in NSTX dimensionless parameter scans increase with decreasing collisionality. While ion thermal transport is neoclassical, the source of anomalous electron thermal transport in these discharges remains unclear, leading to considerable uncertainty when extrapolating to future ST devices at much lower collisionality. Linear gyrokinetic simulations find microtearing modes to be unstable in high collisionality discharges. First non-linear gyrokinetic simulations of microtearing turbulence in NSTX show they can yield experimental levels of transport. Magnetic flutter is responsible for almost all the transport (~98%), perturbed field line trajectories are globally stochastic, and a test particle stochastic transport model agrees to within 25% of the simulated transport. Most significantly, microtearing transport is predicted to increase with electron collisionality, consistent with the observed NSTX confinement scaling. While this suggests microtearing modes may be the source of electron thermal transport, the predictions are also very sensitive to electron temperature gradient, indicating the scaling of the instability threshold is important. In addition, microtearing turbulence is susceptible to suppression via sheared E-B flows as experimental values of E-B shear (comparable to the linear growth rates) dramatically reduce the transport below experimental values. Refinements in numerical resolution and physics model assumptions are expected to minimize the apparent discrepancy. In cases where the predicted transport is strong, calculations suggest that a proposed polarimetry diagnostic may be sensitive to the magnetic perturbations associated with the unique structure of microtearing turbulence.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

TGLF Recalibration for ITER Standard Case Parameters FY2015: Theory and Simulation Performance Target Final Report

This work was motivated by the observation, as early as 2008, that GYRO simulations of some ITER operating scenarios exhibited nonlinear zonal-flow generation large enough to effectively quench turbulence inside r /a ~ 0.5. This observation of flow-dominated, low-transport states persisted even as more accurate and comprehensive predictions of ITER profiles were made using the state-of-the-art TGLF transport model. This core stabilization is in stark contrast to GYRO-TGLF comparisons for modern-day tokamaks, for which GYRO and TGLF are typically in very close agreement. So, we began to suspect that TGLF needed to be generalized to include the effect of zonal-flow stabilization in order to be more accurate for the conditions of reactor simulations. While the precise cause of the GYRO-TGLF discrepancy for ITER parameters was not known, it was speculated that closeness to threshold in the absence of driven rotation, as well as electromagnetic stabilization, created conditions more sensitive the self-generated zonal-flow stabilization than in modern tokamaks. Need for nonlinear zonal-flow stabilization: To explore the inclusion of a zonal-flow stabilization mechanism in TGLF, we started with a nominal ITER profile predicted by TGLF, and then performed linear and nonlinear GYRO simulations to characterize the behavior at and slightly above the nominal temperature gradients for finite levels of energy transport. Then, we ran TGLF on these cases to see where the discrepancies were largest. The predicted ITER profiles were indeed near to the TGLF threshold over most of the plasma core in the hybrid discharge studied (weak magnetic shear, q > 1). Scanning temperature gradients above the TGLF power balance values also showed that TGLF overpredicted the electron energy transport in the low-collisionality ITER plasma. At first (in Q3), a model of only the zonal-flow stabilization (Dimits shift) was attempted. Although we were able to construct an ad hoc model of the zonal flows that fit the GYRO simulations, the parameters of the model had to be tuned to each case. A physics basis for the zonal flow model was lacking. Electron energy transport at short wavelength: A secondary issue – the high-k electron energy flux – was initially assumed to be independent of the zonal flow effect. However, detailed studies of the fluctuation spectra from recent multiscale (electron and ion scale) GYRO simulations provided a critical new insight into the role of zonal flows. The multiscale simulations suggested that advection by the zonal flows strongly suppressed electron-scale turbulence. Radial shear of the zonal E×B fluctuation could not compete with the large electron-scale linear growth rate, but the k x -mixing rate of the E×B advection could. This insight led to a preliminary new model for the way zonal flows saturate both electron- and ion-scale turbulence. It was also discovered that the strength of the zonal E×B velocity could be computed from the linear growth rate spectrum. The new saturation model (SAT1), which replaces the original model (SAT0), was fit to the multiscale GYRO simulations as well as the ion-scale GYRO simulations used to calibrate the original SAT0 model. Thus, SAT1 captures the physics of both multiscale electron transport and zonal-flow stabilization. In future work, the SAT1 model will require significant further testing and (expensive) calibration with nonlinear multiscale gyrokinetic simulations over a wider variety of plasma conditions – certainly more than the small set of scans about a single C-Mod L-mode discharge. We believe the SAT1 model holds great promise as a physics-based model of the multiscale turbulent transport in fusion devices. Correction to ITER performance predictions: Finally, the impact of the SAT1model on the ITER hybrid case is mixed. Without the electron-scale contribution to the fluxes, the Dimits shift makes a significant improvement in the predicted fusion power as originally posited. Alas, including the high-k electron transport reduces the improvement, yielding a modest net increase in predicted fusion power compared to the TGLF prediction with the original SAT0 model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Site-specific plan-view (S)TEM sample preparation from thin films using a dual-beam FIB-SEM

To fully evaluate the atomic structure, and associated properties of materials using transmission electron microscopy, examination of samples from three non-collinear orientations is needed. This is particularly challenging for thin films and nanoscale devices built on substrates due to limitations with plan-view sample preparation. In this work, a new method for preparation of high-quality, site-specific, plan-view TEM samples from thin-films grown on substrates, is presented and discussed. Here, it is based on using a dual-beam focused ion beam scanning electron microscope (FIB-SEM) system. To demonstrate the method, the samples were prepared from thin films of perovskite oxide BaSnO 3 grown on a SrTiO 3 substrate and metal oxide IrO 2 on a TiO 2 substrate, ranging from 20–80 nm in thicknesses using molecular beam epitaxy. While the method is optimized for the thin films, it can be extended to other site-specific plan-view samples and devices build on wafers. Aberration-corrected STEM was used to evaluate the quality of the samples and their applicability for atomic-resolution imaging and analysis.

BaSnO3↗
DOE OSTI2018

Synthesis, Fabrication and Characterization of ZnO-Based Thin Films Prepared by Sol–Gel Process and H{sub 2} Gas Sensing Performance

In this paper, an attempt is made to deposit ZnO thin films using sol–gel process followed by dip-coating method on p-silicon (100) substrates for intended application as a hydrogen gas sensor owing to the low toxic nature and thermal stability of ZnO. The thin films are annealed under annealing temperatures of 350, 450 and 550 °C for 25 min. The crystalline quality of the fabricated thin films is then analyzed by field-emission scanning electron microscopy and transmission electron microscope. The gas sensing performance analysis of ZnO thin films is demonstrated at different annealing temperatures and hydrogen gas concentrations ranging from 100 to 3000 ppm. Results obtained show that the sensitivity is significantly improved as annealing temperature increases with maximum sensitivity being achieved at 550 °C annealing temperature and operating temperature of 150 °C. Hence, the modified ZnO thin films can be applicable as H{sub 2} gas sensing device showing to the improved performance in comparison with unmodified thin-film sensor.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Adaptive Scalpel Scanning Probe Microscopy for Enhanced Volumetric Sensing in Tomographic Analysis

Controlling nanoscale tip‐induced material removal is crucial for achieving atomic‐level precision in tomographic sensing with atomic force microscopy (AFM). While advances have enabled volumetric probing of conductive features with nanometer accuracy in solid‐state devices, materials, and photovoltaics, limitations in spatial resolution and volumetric sensitivity persist. This work identifies and addresses in‐plane and vertical tip‐sample junction leakage as sources of parasitic contrast in tomographic AFM, hindering real‐space 3D reconstructions. Novel strategies are proposed to overcome these limitations. First, the contrast mechanisms analyzing nanosized conductive features are explored when confining current collection purely to in‐plane transport, thus allowing reconstruction with a reduction in the overestimation of the lateral dimensions. Furthermore, an adaptive tip‐sample biasing scheme is demonstrated for the mitigation of a class of artefacts induced by the high electric field inside the thin oxide when volumetrically reduced. This significantly enhances vertical sensitivity by approaching the intrinsic limits set by quantum tunneling processes, allowing detailed depth analysis in thin dielectrics. The effectiveness of these methods is showcased in tomographic reconstructions of conductive filaments in valence change memory, highlighting the potential for application in nanoelectronics devices and bulk materials and unlocking new limits for tomographic AFM.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The Noncollinear Path to Two-Dimensional Topological Superconductivity

Two-dimensional magnet-superconductor hybrids (2D-MSH) are promising candidates to realize devices for topology-based quantum technologies and superconducting spintronics. So far, studies have focused on 2D-MSH systems with collinear ferro- or antiferromagnetic layers. Here, we present the discovery of topological superconductivity in a noncollinear MSH system where a magnetic spiral is realized in an Fe monolayer proximity coupled to a superconducting Ta(110) substrate. By combining low-temperature spin-polarized scanning tunneling spectroscopy with an in-depth theoretical study, we can conclude that the system is in a topological nodal-point superconducting phase with low-energy edge modes. Furthermore, we reveal that for this noncollinear spin texture, these edge modes exhibit a magnetization direction-dependent dispersion. This means that a spatial shift of the magnetic spiral could be used to reverse the chirality of an edge mode in future MSH-based devices.

chiral edge modes↗
DOE OSTI2018

Sculpting Nanoscale Functional Channels in Complex Oxides Using Energetic Ions and Electrons

The formation of metastable phases has attracted significant attention because of their unique properties and potential functionalities. In the present study, we demonstrate the phase conversion of energetic-ion-induced amorphous nanochannels/tracks into a metastable defect fluorite in A 2 B 2 O 7 structured complex oxides by electron irradiation. Through in situ electron irradiation experiments in a scanning transmission electron microscope, we observe electron-induced epitaxial crystallization of the amorphous nanochannels in Yb 2 Ti 2 O 7 into the defect fluorite. This energetic-electron-induced phase transformation is attributed to the coupled effect of ionization-induced electronic excitations and local heating, along with subthreshold elastic energy transfers. We also show the role of ionic radii of A-site cations (A = Yb, Gd, and Sm) and B-site cations (Ti and Zr) in facilitating the electron-beam-induced crystallization of the amorphous phase to the defect-fluorite structure. The formation of the defect-fluorite structure is eased by the decrease in the difference between ionic radii of A- and B-site cations in the lattice. Molecular dynamics simulations of thermal annealing of the amorphous phase nanochannels in A 2 B 2 O 7 draw parallels to the electron-irradiation-induced crystallization and confirm the role of ionic radii in lowering the barrier for crystallization. Furthermore, these results suggest that employing guided electron irradiation with atomic precision is a useful technique for selected area phase formation in nanoscale printed devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Semi-transparent p-type barium copper sulfide as a back contact interface layer for cadmium telluride solar cells

Optically transparent p-type materials play a critical role in transparent electronics including photovoltaic (PV) devices. P-type sulfide materials offer an alternative to oxides for PV application due to improved hole transport properties. Here, we report the solution-based synthesis of earth-abundant p-type transparent conducting barium copper sulfide (α-BaCu 4 S 3 , BCS) thin films. These films were characterized using scanning electron microscopy, X-ray diffraction, UV–Vis–NIR spectrophotometry, Raman spectroscopy, and spectroscopic ellipsometry. BCS films of ~100 nm thickness transmit >70% of visible light. We report on tests of the hole transport properties of these BCS films for cadmium telluride (CdTe) photovoltaics, finding that the BCS deposition process forms a beneficial tellurium (Te) rich surface on CdTe by selectively removing Cd from the surface. Based on our study, the BCS interface layer plays dual functions for CdTe PV devices as a hole transport material and as an etchant, enhancing the resulting device performance. We observed a significant increase in open-circuit voltage of CdTe solar cells with the BCS buffer layer. Furthermore, we discuss semitransparent CdTe solar cells with BCS as a hole transport layer and indium tin oxide as a finishing electrode. Semitransparent CdTe solar cells shows 13.3% conversion efficiency for the front side illumination and 1.2% efficiency for back side illumination, indicating high recombination of charge carriers generated close to the rear CdTe/BCS/ITO contact.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Synthesis of bismuth tungstate (Bi{sub 2}WO{sub 6}) nanoflakes and their field emission investigation

The nanoflakes of Bismuth Tungstate (Bi{sub 2}WO{sub 6}) were successfully synthesized by a one-step facile hydrothermal route without using any templates or surfactants and field emission investigations of the Bi{sub 2}WO{sub 6} nanoflakes emitter are reported. Structural and morphological analysis of as-synthesized Bi{sub 2}WO{sub 6} nanoflakes has been carried out using X-ray diffraction (XRD) and scanning electron microscope (SEM). Moreover, the field emission characteristics of the Bi{sub 2}WO{sub 6} nanoflakes are found to be superior to the other semiconductor emitters. The synthesized Bi{sub 2}WO{sub 6} nanoflakes emitter delivers current density of ~222.35 μA/cm{sup 2} at an applied electric field of ~7.2 V/μm. The emission current stability investigated at pre-set value of ~2 μA is observed to be fairly good. These observed results demonstrate potential candidate of the Bi{sub 2}WO{sub 6} cathode as an electron source for practical applications in vacuum microelectronic device.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

The CNAO dose delivery system for modulated scanning ion beam radiotherapy

Purpose: This paper describes the system for the dose delivery currently used at the Centro Nazionale di Adroterapia Oncologica (CNAO) for ion beam modulated scanning radiotherapy. Methods: CNAO Foundation, Istituto Nazionale di Fisica Nucleare and University of Torino have designed, built, and commissioned a dose delivery system (DDS) to monitor and guide ion beams accelerated by a dedicated synchrotron and to distribute the dose with a full 3D scanning technique. Protons and carbon ions are provided for a wide range of energies in order to cover a sizable span of treatment depths. The target volume, segmented in several layers orthogonally to the beam direction, is irradiated by thousands of pencil beams which must be steered and held to the prescribed positions until the prescribed number of particles has been delivered. For the CNAO beam lines, these operations are performed by the DDS. The main components of this system are two independent beam monitoring detectors, called BOX1 and BOX2, interfaced with two control systems performing the tasks of real-time fast and slow control, and connected to the scanning magnets and the beam chopper. As a reaction to any condition leading to a potential hazard, a DDS interlock signal is sent to the patient interlock system which immediately stops the irradiation. The essential tasks and operations performed by the DDS are described following the data flow from the treatment planning system through the end of the treatment delivery. Results: The ability of the DDS to guarantee a safe and accurate treatment was validated during the commissioning phase by means of checks of the charge collection efficiency, gain uniformity of the chambers, and 2D dose distribution homogeneity and stability. A high level of reliability and robustness has been proven by three years of system activity needing rarely more than regular maintenance and working with 100% uptime. Four identical and independent DDS devices have been tested showing comparable performances and are presently in use on the CNAO beam lines for clinical activity. Conclusions: The dose delivery system described in this paper is one among the few worldwide existing systems to operate ion beam for modulated scanning radiotherapy. At the time of writing, it has been used to treat more than 350 patients and it has proven to guide and control the therapeutic pencil beams reaching performances well above clinical requirements. In particular, in terms of dose accuracy and stability, daily quality assurance measurements have shown dose deviations always lower than the acceptance threshold of 5% and 2.5%, respectively.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Atmospheric pressure plasma polymerization using double grounded electrodes with He/Ar mixture

In this study, we have proposed the double grounded atmospheric pressure plasma jet (2G-APPJ) device to individually control the plasmas in both fragmentation (or active) and recombination (or passive) regions with a mixture of He and Ar gases to deposit organic thin films on glass or Si substrates. Plasma polymerization of acetone has been successfully deposited using a highly energetic and high-density 2G-APPJ and confirmed by scanning electron microscopy (SEM). Plasma composition was measured by optical emission spectroscopy (OES). In addition to a large number of Ar and He spectra lines, we observed some spectra of C{sub 2} and CH species for fragmentation and N{sub 2} (second positive band) species for recombination. The experimental results confirm that the Ar gas is identified as a key factor for facilitating fragmentation of acetone, whereas the He gas helps the plume of plasma reach the substrate on the 2{sup nd} grounded electrode during the plasma polymerization process. The high quality plasma polymerized thin films and nanoparticles can be obtained by the proposed 2G-APPJ device using dual gases.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Effects of Interface Induced Natural Strains on Magnetic Properties of FeRh

FeRh is a unique alloy which shows temperature dependent phase transition magnetic properties. The lattice parameter (a) of this CsCl-type (B2) structure is 4.1712 Å. It undergoes a first order transition from antiferromagnetic (AFM) to ferromagnetic (FM) order at around 370K and hysteretic behavior while cooling and heating. This meta-magnetic transition of FeRh is accompanied by an isotropic expansion in the unit cell volume, which indicates strong coupling between magnetic and structural properties of FeRh. Consequently, the magnetic and transport properties, such as magnetoresistance (MR), are changed during the transition. Due to its unique thermo-magnetic behaviors, FeRh is very important for future spintronic devices. The structure could be applicable for MR devices such as memory, sensors, and many other applications. It is critical to understand how to systematically influence phase transition of FeRh from naturally applied strains. Here, we investigate magnetic properties of FeRh in different strain environments induced by the substrates with different lattice parameters. The study was performed using synchrotron radiation, temperature dependent magnetometry, and magnetic scanning probe microscopy in addition to Landau theory calculations. We found that the naturally induced strains could modulate the magnetic phase locally and globally. The presence of the segments from the nucleation of the ferromagnetic domains, with a very thin layer in the antiferromagnetic matrix and the domain growth, were observed gradually. Using the systematic phenomena, it could be used for immediate applications in the future generation of phase change random access memory (PC-RAM) devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Neutron irradiation effects on metal-gallium nitride contacts

We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 10{sup 15} n/cm{sup 2} neutron threshold for Schottky barrier ideality factor increases, a 10{sup 15} n/cm{sup 2} fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 10{sup 16} n/cm{sup 2} neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗