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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Semiconductor diode laser material and devices with emission in visible region of the spectrum

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Ladany, I.↗
NASA NTRS2004

Improved Measurement of Dispersion in an Optical Fiber

An improved method of measuring chromatic dispersion in an optical fiber or other device affords a lower (relative to prior such methods) limit of measurable dispersion. This method is a modified version of the amplitude-modulation (AM) method, which is one of the prior methods. In comparison with the other prior methods, the AM method is less complex. However, the AM method is limited to dispersion levels . 160 ps/nm and cannot be used to measure the symbol of the dispersion. In contrast, the present modified version of the AM method can be used to measure the symbol of the symbol of the dispersion and affords a measurement range from about 2 ps/nm to several thousand ps/nm with a resolution of 0.27 ps/nm or finer. The figure schematically depicts the measurement apparatus. The source of light for the measurement is a laser, the wavelength of which is monitored by an optical spectrum analyzer. A light-component analyzer amplitude-modulates the light with a scanning radio-frequency signal. The modulated light is passed through a buffer (described below) and through the device under test (e.g., an optical fiber, the dispersion of which one seeks to measure), then back to the light-component analyzer for spectrum analysis. Dispersion in the device under test gives rise to phase shifts among the carrier and the upper and lower sideband components of the modulated signal. These phase shifts affect the modulation-frequency component of the output of a photodetector exposed to the signal that emerges from the device under test. One of the effects is that this component goes to zero periodically as the modulation frequency is varied.

Huang, Shouhua↗
NASA NTRS1978

An integrated optical preprocessor for multichannel analog data

As a precursor to the construction of a 16-channel device, a 3-channel integrated optical data preprocessor has been fabricated and tested. The device, which is fabricated in an outdiffused LiNbO3 waveguide, provides a signal related to the channel-by-channel difference between a prerecorded reference set and an incoming data set which is presented in the form of parallel analog voltages. The data are impressed upon the guided wave as a set of electrooptically induced phase shifts, and the comparison to the reference set is performed by holographic subtraction. The reference set can either be introduced as a separate operation or it can be 'learned' by the preprocessor during operation.

Verber, C. M.↗
DOE OSTI2026

Integrated millimeter-wave cavity electro-optic transduction

Emerging communications and computing technologies will rely ever-more on expanding the useful radio frequency spectrum into the millimeter-wave and terahertz frequency range. Both classical and quantum applications would benefit from advancing integration and incorporation of millimeter-wave and electro-optic technologies into common devices, such as modulators. Here we demonstrate an integrated triply-resonant, superconducting electro-optic transducer. Our design incorporates an on-chip 107 GHz niobium titanium nitride superconducting resonator, modulating a thin-film lithium niobate optical racetrack resonator operating at telecom wavelengths. We observe a maximum photon transduction efficiency of η OE ≈ 0.82 × 10 −6 and an average single-photon electro-optic interaction rate of g 0 /2π ≈ 0.7 kHz. We also present a study and analysis of the challenges associated with the design of integrated millimeter-wave resonators and propose possible solutions to these challenges. Our work paves the way for further advancements in resonant electro-optic technologies operating at millimeter-wave frequencies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Improved fabrication of scalable hybrid silicon nitride–thin-film lithium niobate electro-optic modulators

Strategies for improved fabrication of integrated thin-film lithium niobate electro-optic (EO) Mach–Zehnder modulators (MZMs) are reported using scalable processes and designs. The MZM devices utilize direct bonding of unetched and unpatterned thin-film lithium niobate to patterned and planarized silicon photonic microchips. The latter contains silicon nitride waveguide structures of various widths that are used to form hybrid modes that are suitable for high-bandwidth low-voltage EO modulators based on Pockels effect. We report that the incorporation of appropriately designed outgassing channels and certain modifications to key processing steps helped achieve a greater than 99% reduction in void density during bonding. Void reduction is critically important for these traveling-wave hybrid MZM devices in which the optical mode is controllably distributed between multiple thin layers and propagates over millimeter-scale lengths.

Mere, Viphretuo↗
NASA NTRS2001

Atomically Flat Surfaces Developed for Improved Semiconductor Devices

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

Powell, J. Anthony↗
NASA NTRS2000

High-Q Microsphere Cavity for Laser Stabilization and Optoelectronic Microwave Oscillator

With submillimeter size and optical Q up to approximately 10 (exp 10), microspheres with whispering-gallery (WG) modes are attractive new component for fiber-optics/photonics applications and a potential core in ultra-compact high-spectral-purity optical and microwave oscillators. In addition to earlier demonstrated optical locking of diode laser to WG mode in a microsphere, we report on microsphere application in the microwave optoelectronic oscillator, OEO. In OEO, a steady-state microwave modulation of optical carrier is obtained in a closed loop including electro-optical modulator, fiber-optic delay, detector and microwave amplifier. OEO demonstrates exceptionally low phase noise (-140 dBc/Hz at l0kHz from approximately 10GHz carrier) with a fiber length approximately 2km. Current technology allows to put all parts of the OEO, except the fiber, on the same chip. Microspheres, with their demonstrated Q equivalent to a kilometer fiber storage, can replace fiber delays in a truly integrated device. We have obtained microwave oscillation in microsphere-based OEO at 5 to 18 GHz, with 1310nm and 1550nm optical carrier, in two configurations: 1) with external DFB pump laser, and 2) with a ring laser including microsphere and a fiber optic amplifier. Also reported is a simple and efficient fiber coupler for microspheres facilitating their integration with existing fiber optics devices.

Ilchenko, Vladimir S.↗
DOE OSTI2025

Growth and characterization of high-quality Zr doped AlN epilayers

AlN stands out for its remarkable figures of merit for electronic and photonic devices, attributed to its ultrawide bandgap of ∼6.1 eV and an exceptionally high critical field of ∼15 MV/cm. More recently, zirconium (Zr) doped AlN (AlN:Zr) has also been identified as a promising material platform for the exploration of solid-state qubits for quantum information and technology, high performance piezoelectric acoustic wave resonators, and optically triggered ultrafast power switching devices facilitated by optically activating Zr related impurities. Despite the significant potential, the ability for producing AlN:Zr epitaxial structures has yet to be established. In this study, we have achieved AlN:Zr epilayers with a high Zr doping level [NZr] of up to 1020 cm−3 using industrial standard metal-organic chemical vapor deposition growth technique. High crystalline quality of AlN:Zr was confirmed by x-ray diffraction, revealing a narrow full width at half maximum of the (002) rocking curve at 216 arcsec for 1.8 μm thick epilayers deposited on sapphire at [NZr]=1020 cm−3. Zr doping was observed to slightly increase the c-lattice constant to 4.992 Å for AlN:Zr (at [NZr]=1020 cm−3) compared to 4.980 Å for undoped AlN. X-ray photoelectron spectroscopy measurement results verified the substitution of Zr at the Al site (ZrAl). The formation of (ZrAl–VN) complexes, which are predicted to possess all the desired properties required by quantum qubits, was confirmed through optical absorption studies. The realization of high-quality AlN:Zr epilayers significantly broadens the scope of technologically significant device applications for AlN.

36 MATERIALS SCIENCE↗
NASA NTRS1997

Optical Verification Laboratory Demonstration System for High Security Identification Cards

Document fraud including unauthorized duplication of identification cards and credit cards is a serious problem facing the government, banks, businesses, and consumers. In addition, counterfeit products such as computer chips, and compact discs, are arriving on our shores in great numbers. With the rapid advances in computers, CCD technology, image processing hardware and software, printers, scanners, and copiers, it is becoming increasingly easy to reproduce pictures, logos, symbols, paper currency, or patterns. These problems have stimulated an interest in research, development and publications in security technology. Some ID cards, credit cards and passports currently use holograms as a security measure to thwart copying. The holograms are inspected by the human eye. In theory, the hologram cannot be reproduced by an unauthorized person using commercially-available optical components; in practice, however, technology has advanced to the point where the holographic image can be acquired from a credit card-photographed or captured with by a CCD camera-and a new hologram synthesized using commercially-available optical components or hologram-producing equipment. Therefore, a pattern that can be read by a conventional light source and a CCD camera can be reproduced. An optical security and anti-copying device that provides significant security improvements over existing security technology was demonstrated. The system can be applied for security verification of credit cards, passports, and other IDs so that they cannot easily be reproduced. We have used a new scheme of complex phase/amplitude patterns that cannot be seen and cannot be copied by an intensity-sensitive detector such as a CCD camera. A random phase mask is bonded to a primary identification pattern which could also be phase encoded. The pattern could be a fingerprint, a picture of a face, or a signature. The proposed optical processing device is designed to identify both the random phase mask and the primary pattern [1-3]. We have demonstrated experimentally an optical processor for security verification of objects, products, and persons. This demonstration is very important to encourage industries to consider the proposed system for research and development.

Javidi, Bahram↗
DOE OSTI2022

A Pockels cell enabled heterodyne phase contrast imaging diagnostic for detection of ion cyclotron emission

This work describes a novel optical heterodyne detection scheme that significantly extends the frequency response of the phase contrast imaging method to detect electron density fluctuations in tens of megahertz frequency range. The system employs a variable frequency electro-optic modulator to allow operation at any frequency in the range 10–40 MHz without the need to realign the system. The frequency coverage of the system makes it suitable to measure the radial structure of the electron density component of ion cyclotron emission on devices having confining magnetic field of a few tesla, thus extending the purely temporal measurements provided so far by magnetic probes.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Next-generation perovskite photovoltaics: improving, stabilizing, and lead-sealing of record-setting laboratory solar cells towards commercialization

Summary: In the proposed program we plan to improve perovskite photovoltaic performance by developing (1) orientational control of 3D/2D perovskite heterostructures to simplify device architectures, thus improving device efficiencies and stability; (2) high-throughput optical measurements and real-time device simulations for device optimization; (3) robust, dual-pronged lead-sealing and oxygen/moisture/UV barrier films for long-term stability. Specifically, we seek to develop an in-depth understanding of the perovskite film formation, interface passivation, device stability, and environmentally friendly encapsulation, which together will lead to perovskite devices with PCE of over 28%, stability of T80 at 85/85 (85% humidity at 85 degrees C) for 10,000, expected to be equivalent to T90 of 100 hours), and architectures that would satisfy the U.S. EPA and RoHS limits of lead-leaching. The knowledge generated with this project will be applicable to tandem devices with wider-bandgap perovskites.

14 SOLAR ENERGY↗
NASA NTRS1994

Optically Addressable, Ferroelectric Memory With NDRO

For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.

Thakoor, Sarita↗
NASA NTRS1985

Light-Activated Microwave Device

Laser-activated microwave semiconductor device switches at microwave speeds, generates pulses, or detects optical pulses with fast response. Device consists essentially of back-to-back metal/thin oxide/silicon (MTOS) capacitors on silicon chip.

Maserjian, J.↗
NASA NTRS1990

GaAIAs Traveling-Wave Electro-optical Modulators

Microwave signals modulate optical signals in unit integrable with GaAs and GaAIAs devices. Experimental GaAIAs electro-optical modulators designed and built for operation at wavelength of 0.82 micrometers. Easily integrable with GaAs monolithic microwave integrated circuits. Integrated optical and microwave waveguides in electro-optical materials constitute traveling-wave electro-optical modulator in configuration of Mach-Zehnder interferometer. Because characteristic impedance of waveguide 50 ohms - standard value - no impedance-matching network required.

Bhasin, Kul B.↗
NASA NTRS1975

A new real-time non-coherent to coherent light image converter - The hybrid field effect liquid crystal light valve

A new, high-performance device has been developed for application to real-time coherent optical data processing. The new device embodies a CdS photoconductor, a CdTe light-absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The noncoherent image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the ac voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state and the optical birefringence effect to create the bright on-state. The liquid crystal modulates the polarization of the coherent read-out light so an analyzer must be used to create an intensity modulated output beam.

Grinberg, J.↗
DOE OSTI2025

Enhanced magnetic and optical properties of Y 3 Fe 5 O 12 (YIG) films with Au nanoinclusions

Y 3 Fe 5 O 12 (YIG) thin films are well known for their ferrimagnetic insulating property and low Gilbert damping coefficient (α), allowing them to be used for various spintronic applications and as magneto-optical isolators for photonic devices. Instead of doping, incorporation of plasmonic metals as nanoinclusions could be a promising route for improved magneto-optical coupling properties. In this work, YIG–Au nanocomposites have been deposited with ferrimagnetic insulating YIG as the matrix and Au nanoinclusions which introduce plasmonic absorption, optical anisotropy, and hyperbolic properties. Films with varying Au nanoinclusion densities have been processed and annealed to compare with the as-deposited ones. The films that had low Au nanoinclusion density and were annealed presented a lower magnetic damping coefficient of 2.84 × 10 −4 than the pure YIG film (9.66 × 10 −4 ). The as-deposited film with the highest Au density shows the strongest hyperbolic properties among all samples. These results demonstrate that both magnetic damping and optical properties can be tuned through deposition conditions in YIG–Au nanocomposite thin films, allowing for a balance of both properties. This YIG–Au nanocomposite system presents promising potential in next-generation opto-spintronic devices.

Quigley, Lizabeth [Purdue Univ., West Lafayette, I↗