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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

90° magnetic coupling in a NiFe/FeMn/biased NiFe multilayer spin valve component investigated by polarized neutron reflectometry

We have observed 90° magnetic coupling in a NiFe/FeMn/biased NiFe multilayer system using polarized neutron reflectometry. Magnetometry results show magnetic switching for both the biased and free NiFe layers, the latter of which reverses at low applied fields. As these measurements are only capable of providing information about the total magnetization within a sample, polarized neutron reflectometry was used to investigate the reversal behavior of the NiFe layers individually. Both the non-spin-flip and spin-flip neutron reflectometry signals were tracked around the free NiFe layer hysteresis loop and were used to detail the evolution of the magnetization during reversal. At low magnetic fields near the free NiFe coercive field, a large spin-flip signal was observed, indicating magnetization aligned perpendicular to both the applied field and pinned layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Experimentally validated finite element model of electrocaloric multilayer ceramic structures

A novel finite element model to simulate the electrocaloric response of a multilayer ceramic capacitor (MLCC) under real environment and operational conditions has been developed. The two-dimensional transient conductive heat transfer model presented includes the electrocaloric effect as a source term, as well as accounting for radiative and convective effects. The model has been validated with experimental data obtained from the direct imaging of MLCC transient temperature variation under application of an electric field. The good agreement between simulated and experimental data, suggests that the novel experimental direct measurement methodology and the finite element model could be used to support the design of optimised electrocaloric units and operating conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Experimental study for the feasibility of using hard x-rays for micro-XRF analysis of multilayered metals

Application of polycapillary optical systems to improve a spatial resolution for the μ-XRF analysis by focusing a primary x-ray beam and/or by collecting fluorescence emission is well known. The challenge is to optimize them in combination with x-ray source for exciting K-lines above 20 keV that could allow characterization of many materials composed by heavy elements. To pursue this goal, preliminary studies on possible polycapillary lens employment in thickness determination for multilayer metal materials will be presented in this work. In this paper, the results of first attempts of integrating PyMCA with Monte Carlo simulation code (XMI-MSIM) that takes into account the secondary fluorescence effects on quantitative analysis of homogeneous matrices, in particular, metal alloys, are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Scaling behavior of hysteresis in multilayer MoS{sub 2} field effect transistors

Extrinsic hysteresis effects are often observed in MoS{sub 2} field effect devices due to adsorption of gas molecules on the surface of MoS{sub 2} channel. Scaling is a common method used in ferroics to quantitatively study the hysteresis. Here, the scaling behavior of hysteresis in multilayer MoS{sub 2} field effect transistors with a back-gated configuration was investigated. The power-law scaling relations were obtained for hysteresis area (〈A〉) and memory window (ΔV) with varying the region of back-gate voltage (V{sub bg,max}). It is interesting to find that the transition voltage in the forward sweep (V{sub FW}) and in the backward sweep (V{sub BW}) shifted to the opposite directions of back-gate voltage (V{sub bg}) with increasing V{sub bg,max}. However, when decreasing V{sub bg,max}, V{sub FW} shifted to positive and reversibly recovered, but V{sub BW} almost kept unchanged. The evolution of 〈A〉, ΔV, V{sub FW,} and V{sub BW} with V{sub bg,max} were discussed by the electrons transferring process between the adsorbate and MoS{sub 2} channel.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electrical characteristics of multilayer MoS{sub 2} transistors at real operating temperatures with different ambient conditions

Atomically thin, two-dimensional (2D) materials with bandgaps have attracted increasing research interest due to their promising electronic properties. Here, we investigate carrier transport and the impact of the operating ambient conditions on back-gated multilayer MoS{sub 2} field-effect transistors with a thickness of ∼50 nm at their realistic working temperatures and under different ambient conditions (in air and in a vacuum of ∼10{sup −5} Torr). Increases in temperature cause increases in I{sub min} (likely due to thermionic emission at defects), and result in decreased I{sub on} at high V{sub G} (likely due to increased phonon scattering). Thus, the I{sub on}/I{sub min} ratio decreases as the temperature increases. Moreover, the ambient effects with working temperatures on field effect mobilities were investigated. The adsorbed oxygen and water created more defect sites or impurities in the MoS{sub 2} channel, which can lead another scattering of the carriers. In air, the adsorbed molecules and phonon scattering caused a reduction of the field effect mobility, significantly. These channel mobility drop-off rates in air and in a vacuum reached 0.12 cm{sup 2}/V s K and 0.07 cm{sup 2}/V s K, respectively; the rate of degradation is steeper in air than in a vacuum due to enhanced phonon mode by the adsorbed oxygen and water molecules.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of MgO/Co interface and Co/MgO interface on the spin dependent transport in perpendicular Co/Pt multilayers

Effect of the metal/oxide interface on spin-dependent transport properties in perpendicular [Co/Pt]{sub 3} multilayers was investigated. The saturation Hall resistivity (ρ{sub xy}) is significantly increased by 45% with 1.4 nm thick CoO layer inserted at the top Co/MgO interface; whereas it is increased only 25% with 1 nm thick CoO layer at the bottom MgO/Co interface. The interfacial structures characterized by X-ray photoelectron spectroscopy show that the MgO/Co interface and Co/MgO interface including chemical states play a dominant role on spin-dependent transport, leading to different anomalous Hall behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Balancing high gain and bandwidth in multilayer organic photodetectors with tailored carrier blocking layers

We present detailed studies of the high photocurrent gain behavior in multilayer organic photodiodes containing tailored carrier blocking layers we reported earlier in a Letter [W. T. Hammond and J. Xue, Appl. Phys. Lett. 97, 073302 (2010)], in which a high photocurrent gain of up to 500 was attributed to the accumulation of photogenerated holes at the anode/organic active layer interface and the subsequent drastic increase in secondary electron injection from the anode. Here, we show that both the hole-blocking layer structure and layer thickness strongly influence the magnitude of the photocurrent gain. Temporal studies revealed that the frequency response of such devices is limited by three different processes with lifetimes of 10 μs, 202 μs, and 2.72 ms for the removal of confined holes, which limit the 3 dB bandwidth of these devices to 1.4 kHz. Furthermore, the composition in the mixed organic donor-acceptor photoactive layer affects both gain and bandwidth, which is attributed to the varying charge transport characteristics, and the optimal gain-bandwidth product is achieved with approximately 30% donor content. Finally, these devices show a high dynamic range of more than seven orders of magnitude, although the photocurrent shows a sublinear dependence on the incident optical power.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

(In,Mn)As multilayer quantum dot structures

(In,Mn)As multilayer quantum dots structures were grown by molecular beam epitaxy using a Mn selective doping of the central parts of quantum dots. The study of the structural and magneto-optical properties of the samples with three and five layers of (In,Mn)As quantum dots has shown that during the quantum dots assembly, the out-diffusion of Mn from the layers with (In,Mn)As quantum dots can occur resulting in the formation of the extended defects. To produce a high quality structures using the elaborated technique of selective doping, the number of (In,Mn)As quantum dot layers should not exceed three.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Interface stress development in the Cu/Ag nanostructured multilayered film during the tensile deformation

Cu/Ag nanostructured multilayered films (NMFs) with different stacking sequences were investigated by synchrotron X-ray diffraction during the tensile deformations for interface stress study. The lattice strains were carefully traced and the stress partition, which usually occurs in the multiphase bulk metallic materials during plastic deformations, was first quantitatively analyzed in the NMFs here. The interface stress of the Cu/Ag NMFs was carefully analyzed during the tensile deformation and the results revealed that the interface stress was along the loading direction and exhibited three-stage evolution. This tensile interface stress has a detrimental effect on the deformation, leading to the early fracture of the NMFs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Enhanced absorption of graphene strips with a multilayer subwavelength grating structure

The optical absorption of graphene strips covered on a multilayer subwavelength grating (MSG) surface is theoretically investigated. The absorption of graphene strips with MSG is enhanced in the wavelength range of 1500 nm to 1600 nm by critical coupling, which is associated with the combined effects of a guided resonance of MSG and its photonic band gap effect. The critical coupling of the graphene strips can be controlled by adjusting the incident angle without changing the structural parameters of MSG. The absorption of graphene strips can also be tuned by varying key parameters, such as grating period, strip width, and incident angle.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Oscillating magnetocaloric effect of a multilayer graphene

The oscillating magnetocaloric effect of a multilayer graphene in Bernal and rhombohedral stacking is investigated to extend the previous knowledge of the effect on a single layer graphene. We started from results of a tight-binding model and obtained analytical expressions for the thermodynamic potential and for the entropy change. The last exhibits the same dependence on field and temperature observed for other diamagnetic systems; it oscillates with the inverse magnetic field and presents a maximum value at a given temperature. The amplitude of the oscillating entropy change decreases with the number of layers and the stacking sequence rules the magnetocaloric properties of the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effective anisotropy gradient in pressure graded [Co/Pd] multilayers

We have used polarized neutron reflectometry to show that controlled variation of growth pressure during deposition of Co/Pd multilayers can be used to achieve a significant vertical gradient in the effective anisotropy. This gradient is strongly dependent on deposition order (low to high pressure or vice versa), and is accompanied by a corresponding gradient in saturation magnetization. These results demonstrate pressure-grading as an attractively simple technique for tailoring the anisotropy profile of magnetic media.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Full-dimensional multilayer multiconfigurational time-dependent Hartree study of electron transfer dynamics in the anthracene/C60 complex

Electron transfer at the donor-acceptor heterojunctions plays a critical role in the photoinduced process during the solar energy conversion in organic photovoltaic materials. We theoretically investigate the electron transfer process in the anthracene/C60 donor-acceptor complex by using quantum dynamics calculations. The electron-transfer model Hamiltonian with full dimensionality was built by quantum-chemical calculations. The quantum dynamics calculations were performed using the multiconfigurational time-dependent Hartree (MCTDH) theory and multilayer (ML) MCTDH methods. The latter approach (ML-MCTDH) allows us to conduct the comprehensive study on the quantum evolution of the full-dimensional electron-transfer model including 4 electronic states and 246 vibrational degrees of freedom. Our quantum dynamics calculations exhibit the ultrafast anthracene → C60 charge transfer process because of the strong coupling between excitonic and charge transfer states. This work demonstrates that the ML-MCTDH is a very powerful method to treat the quantum evolution of complex systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Optimization of the random multilayer structure to break the random-alloy limit of thermal conductivity

A low lattice thermal conductivity (κ) is desired for thermoelectrics, and a highly anisotropic κ is essential for applications such as magnetic layers for heat-assisted magnetic recording, where a high cross-plane (perpendicular to layer) κ is needed to ensure fast writing while a low in-plane κ is required to avoid interaction between adjacent bits of data. In this work, we conduct molecular dynamics simulations to investigate the κ of superlattice (SL), random multilayer (RML) and alloy, and reveal that RML can have 1–2 orders of magnitude higher anisotropy in κ than SL and alloy. We systematically explore how the κ of SL, RML, and alloy changes relative to each other for different bond strength, interface roughness, atomic mass, and structure size, which provides guidance for choosing materials and structural parameters to build RMLs with optimal performance for specific applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

Large-area graphene film doped with hetero-atoms is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, fuel cells among many others. Here, we report the structural and electronic properties of nitrogen doped multilayer graphene on 4H-SiC (0001). The incorporation of nitrogen during the growth causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. The analysis of micro-Raman mapping of G, D, 2D bands shows a predominantly trilayer graphene with a D band inherent to doping and inhomogeneous dopant distribution at the step edges. Ultraviolet photoelectron spectroscopy (UPS) indicates an n type work function (WF) of 4.1 eV. In addition, a top gate FET device was fabricated showing n-type I-V characteristic after the desorption of oxygen with high electron and holes mobilities.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Correlation between Pd metal thickness and thermally stable perpendicular magnetic anisotropy features in [Co/Pd]{sub n} multilayers at annealing temperatures up to 500 °C

We examine highly stable perpendicular magnetic anisotropy (PMA) features of [Co/Pd]{sub 10} multilayers (MLs) versus Pd thickness at various ex-situ annealing temperatures. Thermally stable PMA characteristics were observed up to 500 °C, confirming the suitability of these systems for industrial applications at this temperature. Experimental observations suggest that the choice of equivalent Co and Pd layer thicknesses in a ML configuration ensures thermally stable PMA features, even at higher annealing temperatures. X-ray diffraction patterns and cross-sectional transmission electron microscopy images were obtained to determine thickness, post-annealing PMA behavior, and to explore the structural features that govern these findings.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Highly stable thin film transistors using multilayer channel structure

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO{sub 2}) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO{sub 2} layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO{sub 2} layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Stress insensitive multilayer chip inductor with ferrite core

Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4} is synthesized by sol gel auto combustion technique. The obtained ferrite powder is finally sintered in a microwave furnace at 850°C. Multilayer chip inductor (MLCI) of two layers is prepared by screen printing technique. The sintered ferrite is characterized by X-ray diffraction. The frequency response of dielectric constant is studied in the frequency range of 100Hz to 5MHz. Dielectric polarization is discussed in the light of Maxwell-Wagner interfacial polarization. The prepared MLCI is studied for stress sensitivity in the range of 0 to 8 MPa.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗