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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Medical applications of shape memory polymers

Shape memory polymers are described here and major advantages in some applications are identified over other medical materials such as shape memory alloys (SMA). A number of medical applications are anticipated for shape memory polymers. Some simple applications are already utilized in medical world, others are in examination process. Lately, several important applications are being considered for CHEM foams for self-deployable vascular and coronary devices. One of these potential applications, the endovascular treatment of aneurysm was experimentally investigated with encouraging results and is described in this paper as well.

cold hibernated elastic memory (CHEM)↗
DOE OSTI2022

Field-Deployable Quantum Memory for Quantum Networking

High-performance quantum memories are an essential component for regulating temporal events in quantum networks. As a component in quantum-repeaters, they have the potential to support the distribution of entanglement beyond the physical limitations of fiber loss. This will enable key applications such as quantum key distribution, network-enhanced quantum sensing, and distributed quantum computing. Here, we present a quantum memory engineered to meet real-world deployment and scaling challenges. The memory technology utilizes a warm rubidium vapor as the storage medium, and operates at room temperature, without the need for vacuum- and/or cryogenic- support. Here, we demonstrate performance specifications of high-fidelity retrieval (95%) and low operation error (10 –2 ) at a storage time of 160 µs for single-photon level quantum memory operations. We further show a substantially improved storage time (with classical-level light) of up to 1ms by suppressing atomic diffusions. The device is housed in an enclosure with a standard 2U rackmount form factor, and can robustly operate on a day scale in a noisy environment. This result marks an important step toward implementing quantum networks in the field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Amorphous Indium Oxide Channel FEFETs With Write Voltage of 0.9 V and Endurance >10 12 for Refresh-Free Embedded Memory

This work presents, for the first time, a back-end-of-the-line (BEOL)-compatible W-doped indium oxide (IWO) ferroelectric field-effect transistor (FEFET) with a record-low operating voltage below 0.9 V and a write speed of 20 ns while achieving a transient read current window (CW) ratio ( I LVT /I HVT ) greater than 10 4 . The device also exhibits exceptional reliability characteristics such as: 1) measured bipolar write endurance up to 10 12 cycles; 2) a fast read speed of 50 ns; 3) read endurance surpassing 10 12 cycles; and 4) retention exceeding 10 4 s at 85 ∘ C. Furthermore, a physics-based numerical model has been developed to investigate the nanoscale characteristics of BEOL FEFET devices, leveraging nucleation-limited switching in HfO 2 ferroelectrics and dc characterization to extract material and channel parameters for accurate device simulation. The simulation uncovers the stochastic switching behavior of BEOL amorphous oxide semiconductor (AOS) FEFETs and demonstrates an intrinsic switching time as low as 1 ps, highlighting the potential of BEOL AOS FEFETs for ultrafast memory applications. These results establish AOS FEFETs as a compelling candidate for high-density embedded memory applications for last-level cache (LLC) (L4) in advanced CMOS technology nodes.

1-V ferroelectric field-effect transistor (FEFET)↗
DOE OSTI2024

Formal Definitions and Performance Comparison of Consistency Models for Parallel File Systems

The semantics of HPC storage systems are defined by the consistency models to which they abide. Storage consistency models have been less studied than their counterparts in memory systems, with the exception of the POSIX standard and its strict consistency model. The use of POSIX consistency imposes a performance penalty that becomes more significant as the scale of parallel file systems increases and the access time to storage devices, such as node-local solid storage devices, decreases. While some efforts have been made to adopt relaxed storage consistency models, these models are often defined informally and ambiguously as by-products of a particular implementation. Here in this work, we establish a connection between memory consistency models and storage consistency models and revisit the key design choices of storage consistency models from a high-level perspective. Further, we propose a formal and unified framework for defining storage consistency models and a layered implementation that can be used to easily evaluate their relative performance for different I/O workloads. Finally, we conduct a comprehensive performance comparison of two relaxed consistency models on a range of commonly seen parallel I/O workloads, such as checkpoint/restart of scientific applications and random reads of deep learning applications. We demonstrate that for certain I/O scenarios, a weaker consistency model can significantly improve the I/O performance. For instance, in small random reads that are typically found in deep learning applications, session consistency achieved a 5x improvement in I/O bandwidth compared to commit consistency, even at small scales.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

A memory-driven mapping algorithm for heterogeneous systems

mpibind is a memory-driven algorithm to map parallel hybrid applications to the underlying hardware resources transparently, efficiently, and portably. There are two fundamental aspects of this algorithm. First, unlike existing mappings, its primary design point is the memory system. Compute elements are selected based on the identified memory components and not vice versa. Second, it embodies a global awareness of hybrid programming abstractions as well as heterogeneous devices.

Leon Borja, EdgarA↗
NASA NTRS1995

Solar Particle Induced Upsets in the TDRS-1 Attitude Control System RAM During the October 1989 Solar Particle Events

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU'S. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU'S, very dose to the 243 observed SEU'S. These calculations uniquely demonstrate the roles that solar heavy ions and protons played in the production of SEU's during the October 1989 solar particle events.

Croley, D. R.↗
NASA NTRS2010

Flexible Peripheral Component Interconnect Input/Output Card

The Flexible Peripheral Component Interconnect (PCI) Input/Output (I/O) Card is an innovative circuit board that provides functionality to interface between a variety of devices. It supports user-defined interrupts for interface synchronization, tracks system faults and failures, and includes checksum and parity evaluation of interface data. The card supports up to 16 channels of high-speed, half-duplex, low-voltage digital signaling (LVDS) serial data, and can interface combinations of serial and parallel devices. Placement of a processor within the field programmable gate array (FPGA) controls an embedded application with links to host memory over its PCI bus. The FPGA also provides protocol stacking and quick digital signal processor (DSP) functions to improve host performance. Hardware timers, counters, state machines, and other glue logic support interface communications. The Flexible PCI I/O Card provides an interface for a variety of dissimilar computer systems, featuring direct memory access functionality. The card has the following attributes: 8/16/32-bit, 33-MHz PCI r2.2 compliance, Configurable for universal 3.3V/5V interface slots, PCI interface based on PLX Technology's PCI9056 ASIC, General-use 512K 16 SDRAM memory, General-use 1M 16 Flash memory, FPGA with 3K to 56K logical cells with embedded 27K to 198K bits RAM, I/O interface: 32-channel LVDS differential transceivers configured in eight, 4-bit banks; signaling rates to 200 MHz per channel, Common SCSI-3, 68-pin interface connector.

Bigelow, Kirk K.↗
NASA NTRSDate not supplied

First-Principles Investigation of Phase Transitions in RuNb, RuTa, and Ru-Nb-Ta Ultrahigh Temperature Shape Memory Alloys

Ultrahigh temperature shape memory alloys (UHT-SMAs) have transition temperatures above 600 C, and they have found applications for sensing and actuating devices in aerospace industry. Among very few such UHT-SMAs currently known are Ru-based alloys such as RuNb and RuTa, whose martensite structures and phase transitions are totally different from those of NiTi-based SMAs and were poorly understood. In this work, we carried out a systematical study of RuNb using first-principles total energy calculations and molecular dynamics (MD) simulations. The transition paths and mechanisms in cubic → tetragonal →monoclinic transitions are revealed. and the transition sequence and martensitic transition temperatures are determined (MTTs) by evaluating the Gibbs free energies using thermodynamic integration. The calculated MTTs are in very good agreement with the experimental data. We found that the monoclinic phase at the second transition has the 𝑃21/m symmetry instead of experimentally identified 𝑃2/m. Our calculations demonstrate that RuTa has very similar phase transitions to those of RuTa. Furthermore, we studied the Ru0.5Nb0.25Ta0.25 ternary. Our results can explain the measured significant drop of MTT (~ 200 C) in the second transition for Ru0.5Nb0.25Ta0.25 compared with those of RuNb and RuTa, while in the first transition its MTT is between MTTs of RuNb and RuTa. The insights gained by this study and the verified ab initio methods for accurate MTT calculations can be applied to fast screen and quantitatively design novel UHT-SMAs having similar properties with desirable MTTs and much reduced cost.

Zhigang Wu↗
NASA NTRS2014

Shape Memory Alloy (SMA)-Based Launch Lock

Most NASA missions require the use of a launch lock for securing moving components during the launch or securing the payload before release. A launch lock is a device used to prevent unwanted motion and secure the controlled components. The current launch locks are based on pyrotechnic, electro mechanically or NiTi driven pin pullers and they are mostly one time use mechanisms that are usually bulky and involve a relatively high mass. Generally, the use of piezoelectric actuation provides high precession nanometer accuracy but it relies on friction to generate displacement. During launch, the generated vibrations can release the normal force between the actuator components allowing shaft's free motion which could result in damage to the actuated structures or instruments. This problem is common to other linear actuators that consist of a ball screw mechanism. The authors are exploring the development of a novel launch lock mechanism that is activated by a shape memory alloy (SMA) material ring, a rigid element and an SMA ring holding flexure. The proposed design and analytical model will be described and discussed in this paper.

launch lock↗
NASA NTRS2021

Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3D NAND Flash Memory

Single-event upsets are observed in a 72-layer 3D NAND flash memory operated in single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by three-dimensional data analysis and the energy dependence of device sensitive cross-section. Heavy ion data is also presented for comparison.

Direct ionization↗
NASA NTRS2004

Potential High-Temperature Shape-Memory Alloys Identified in the Ti(Ni,Pt) System

"Shape memory" is a unique property of certain alloys that, when deformed (within certain strain limits) at low temperatures, will remember and recover to their original predeformed shape upon heating. It occurs when an alloy is deformed in the low-temperature martensitic phase and is then heated above its transformation temperature back to an austenitic state. As the material passes through this solid-state phase transformation on heating, it also recovers its original shape. This behavior is widely exploited, near room temperature, in commercially available NiTi alloys for connectors, couplings, valves, actuators, stents, and other medical and dental devices. In addition, there are limitless applications in the aerospace, automotive, chemical processing, and many other industries for materials that exhibit this type of shape-memory behavior at higher temperatures. But for high temperatures, there are currently no commercial shape-memory alloys. Although there are significant challenges to the development of high-temperature shape-memory alloys, at the NASA Glenn Research Center we have identified a series of alloy compositions in the Ti-Ni-Pt system that show great promise as potential high-temperature shape-memory materials.

Noebe, Ronald D.↗
NASA NTRS2000

Optimization of Microelectronic Devices for Sensor Applications

The NASA/JPL goal to reduce payload in future space missions while increasing mission capability demands miniaturization of active and passive sensors, analytical instruments and communication systems among others. Currently, typical system requirements include the detection of particular spectral lines, associated data processing, and communication of the acquired data to other systems. Advances in lithography and deposition methods result in more advanced devices for space application, while the sub-micron resolution currently available opens a vast design space. Though an experimental exploration of this widening design space-searching for optimized performance by repeated fabrication efforts-is unfeasible, it does motivate the development of reliable software design tools. These tools necessitate models based on fundamental physics and mathematics of the device to accurately model effects such as diffraction and scattering in opto-electronic devices, or bandstructure and scattering in heterostructure devices. The software tools must have convenient turn-around times and interfaces that allow effective usage. The first issue is addressed by the application of high-performance computers and the second by the development of graphical user interfaces driven by properly developed data structures. These tools can then be integrated into an optimization environment, and with the available memory capacity and computational speed of high performance parallel platforms, simulation of optimized components can proceed. In this paper, specific applications of the electromagnetic modeling of infrared filtering, as well as heterostructure device design will be presented using genetic algorithm global optimization methods.

Cwik, Tom↗
NASA NTRS1972

Optimal read/write memory system components

Two holographic data storage and display systems, voltage gradient ionization system, and linear strain manipulation system are discussed in terms of creating fast, high bit density, storage device. Components described include: novel mounting fixture for photoplastic arrays; corona discharge device; and block data composer.

Kozma, A.↗
DOE OSTI2025

Neuromorphic heat transport effects in a molecular junction

Understanding energy transport at the nanoscale is an open and fundamental challenge in the molecular sciences with direct implications for the design of new electronics, computing devices, and materials. While nanoscale energy transport under steady-state conditions has been studied extensively, there is much less known about energy transport under time-dependent driving forces, particularly in the far-from-equilibrium regime. In this work, we use nonequilibrium molecular dynamics simulations and stochastic thermodynamics to investigate energy transport in a well-studied nanoscale system—a molecular junction—subjected to a time-periodic temperature gradient. The primary observation is that molecular junctions can exhibit heat transport hysteresis, a phenomenon in which the heat flux through a system depends not only on the instantaneous value of a time-dependent temperature bias but also on the temporal history of that bias. The presented findings illustrate that molecular junctions can exhibit the specific memory effect—heat transport hysteresis—that is essential for the design of thermal neuromorphic computers. This work elucidates a potential pathway toward the realization of such devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Multimode Strong Coupling in Cavity Optomechanics

Optomechanical systems show great potential as quantum transducers and information storage devices for use in future hybrid quantum networks. In this context, optomechanical strong coupling can enable efficient, high-bandwidth, and deterministic transfer of quantum states. While optomechanical strong coupling has been realized at optical frequencies, it has proven difficult to identify a robust optomechanical system that features the low loss and high coupling rates required for more sophisticated control of mechanical motion. In this paper, we demonstrate strong coupling in a Brillouin-based bulk cavity optomechanical system in both the single-mode and the multimode strong-coupling regime, which leads to a useful device both for applications in quantum information and for investigating decoherence phenomena in bulk acoustic wave resonators. Using nontrivial mode hybridizations in the strong-coupling regime, we create hybridized photonic-phononic modes with lifetimes that are significantly longer than those of the uncoupled system. This surprising lifetime enhancement, which results from the interference of decay channels, showcases the use of multimode strong coupling as a general strategy to control extrinsic decoherence mechanisms. Moreover, phonons supported by such bulk-acoustic-wave resonators have a collection of properties, including high frequencies, long coherence times, and robustness against thermal decoherence, that make this optomechanical system particularly enticing for applications such as quantum transduction and memories. Hence, this system provides access to phenomena in a previously unexplored regime of optomechanical interactions and could serve as an important building block for future quantum devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Nitrogen Vacancies Induce Fatigue in Ferroelectric Al 0.93 B 0.07 N

Wurtzite ferroelectrics (e.g., Al 0.93 B 0.07 N) are being explored for high-temperature and emerging near-, or in-compute, memory architectures due to the material advantages offered by their large remanent polarization and robust chemical stability. Despite these advantages, current Al0.93B0.07N devices do not have sufficient endurance lifetime to meet roadmap targets. To identify the defects responsible for this limited endurance, a combination of electronic measurements and optical spectroscopies characterized the evolution of defect states within Al 0.93 B 0.07 N with cycling. Ultrathin (∼10 nm) metal contacts were used to optically probe regions subject to ferroelectric switching; photoluminescence spectroscopy identified the emergence of a transition near 2.1 eV whose intensity scaled with the non-switching polarization quantified via positive-up negative-down (PUND) measurements. Accompanying thermally stimulated depolarization current (TSDC) and modulus spectroscopy measurements also observed the strengthening of a state near 2.1 eV. The origin of this feature is ascribed to transitions between a nitrogen vacancy and another defect deeper in the bandgap. Recognizing that the impurity concentration is largely fixed, strengthening of this transition indicates an increase in the number of nitrogen vacancies. Switching, therefore, creates vacancies in Al 0.93 B 0.07 N likely due to hot-atom damage induced by the aggressive fields necessary to switch wurtzite materials that ultimately limits endurance.

36 MATERIALS SCIENCE↗