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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Gallium loading of gold seed for high yield of patterned GaAs nanowires

A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiO{sub x} selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS) method in a gas source molecular beam epitaxy system. During annealing, Au VLS seeds will alloy with the underlying GaAs substrate and collect beneath the SiO{sub x} mask layer. This behavior is detrimental to obtaining vertically aligned, epitaxial nanowire growth. To circumvent this issue, Au droplets were pre-filled with Ga assuring vertical yields in excess of 99%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Bit patterned media optimization at 1 Tdot/in{sup 2} by post-annealing

We report on the fabrication of 1 Tdot/in{sup 2} bit patterned media with high coercivity (H{sub C}) and narrow intrinsic switching field distribution (iSFD) based on nanoimprint from a master pattern formed by e-beam guided block copolymer assembly onto a carbon hard mask and subsequent pattern transfer via etching into a thin CoCrPt perpendicular anisotropy recording layer. We demonstrate that an additional vacuum annealing step after pattern transfer into the CoCrPt layer and after Carbon hard mask removal not only yields recovery from undesired damage of the island edges, but actually transforms the islands into a magnetically more favorable compositional phase with higher H{sub C}, lower iSFD/H{sub C}, and three-fold increased thermal stability. Energy filtered transmission electron microscopy analysis reveals that the diffusion of Cr from the island cores to the periphery of the islands during post-annealing is responsible for the transformation of the magnetic bits into a more stable state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Uniform, dense, single-phase, 150 nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150 nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535 nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Modification of modulated plasma plumes for the quasi-phase-matching of high-order harmonics in different spectral ranges

We demonstrate the technique allowing the fine tuning of the distance between the laser-produced plasma plumes on the surfaces of different materials, as well as the variation of the sizes of these plumes. The modification of plasma formations is based on the tilting of the multi-slit mask placed between the heating laser beam and target surface, as well as the positioning of this mask in the telescope placed on the path of heating radiation. The modulated plasma plumes with the sizes of single plume ranging between 0.1 and 1 mm were produced on the manganese and silver targets. Modification of the geometrical parameters of plasma plumes proved to be useful for the fine tuning of the quasi-phase-matched high-order harmonics generated in such structures during propagation of the ultrashort laser pulses. We show the enhancement of some groups of harmonics along the plateau range and the tuning of maximally enhanced harmonic by variable modulation of the plasma.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices

Radial InP/InAsP/InP heterostructure nanowires (NWs) on SiO{sub 2}-mask-pattered Si substrates were reported using self-catalyzed InP NWs. Self-catalyzed growth was performed using low growth temperatures and high group-III flow rates, and vertical InP NWs were formed on the mask openings. The diameter and tapering of the self-catalyzed InP NWs were controlled by the introduction of HCl and H{sub 2}S gases during the NW growth, and InP NWs that have a straight region with decreased diameter were formed. Radial InP/InAsP/InP quantum wells (QWs) were grown on the sidewall of the vertical InP NWs on Si substrates. Room-temperature photoluminescence of single NWs from the QW was clearly observed, which exhibited the potential of building blocks for vertical-type optical devices on Si substrates.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Vacuum ultraviolet photochemical selective area atomic layer deposition of Al{sub 2}O{sub 3} dielectrics

We report the photochemical atomic layer deposition of Al{sub 2}O{sub 3} thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit films at 60°C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al{sub 2}O{sub 3} films exhibit dielectric constants of 8 – 10 at 1 MHz after forming gas annealing, similar to films deposited by conventional thermal ALD.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films

We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the material in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics

Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition, the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Femtosecond laser induced tunable surface transformations on (111) Si aided by square grids diffraction

We report an extra freedom to modulate the femtosecond laser energy distribution to control the surface ablated structures through a copper-grid mask. Due to the reduced deposited pulse energy by changing the scanning speed or the pulse fluence, a sequential evolution of three distinctly different surface patterns with periodic distributions is formed, namely, striped ripple lines, ripple microdots, and surface modification. By changing the scanning speed, the number of the multiple dots in a lattice can be modulated. Moreover, by exploring the ablation process through the copper grid mask, it shows an abnormal enhanced ablation effect with strong dependence of the diffraction-aided fs laser ablated surface structures on polarization direction. The sensitivity shows a quasi-cosinusoid-function with a periodicity of π/2. Particularly, the connection process of striped ripple lines manifests a preferential formation direction with the laser polarization.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Vapor shielding models and the energy absorbed by divertor targets during transient events

The erosion of divertor targets caused by high heat fluxes during transients is a serious threat to ITER operation, as it is going to be the main factor determining the divertor lifetime. Under the influence of extreme heat fluxes, the surface temperature of plasma facing components can reach some certain threshold, leading to an onset of intense material evaporation. The latter results in formation of cold dense vapor and secondary plasma cloud. This layer effectively absorbs the energy of the incident plasma flow, turning it into its own kinetic and internal energy and radiating it. This so called vapor shielding is a phenomenon that may help mitigating the erosion during transient events. In particular, the vapor shielding results in saturation of energy (per unit surface area) accumulated by the target during single pulse of heat load at some level E{sub max}. Matching this value is one of the possible tests to verify complicated numerical codes, developed to calculate the erosion rate during abnormal events in tokamaks. The paper presents three very different models of vapor shielding, demonstrating that E{sub max} depends strongly on the heat pulse duration, thermodynamic properties, and evaporation energy of the irradiated target material. While its dependence on the other shielding details such as radiation capabilities of material and dynamics of the vapor cloud is logarithmically weak. The reason for this is a strong (exponential) dependence of the target material evaporation rate, and therefore the “strength” of vapor shield on the target surface temperature. As a result, the influence of the vapor shielding phenomena details, such as radiation transport in the vapor cloud and evaporated material dynamics, on the E{sub max} is virtually completely masked by the strong dependence of the evaporation rate on the target surface temperature. However, the very same details define the amount of evaporated particles, needed to provide an effective shielding to the target, and, therefore, strongly influence resulting erosion rate. Thus, E{sub max} cannot be used for validation of shielding models and codes, aimed at the target material erosion calculations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Large scale ZnTe nanostructures on polymer micro patterns via capillary force photolithography

A novel approach to prepare micro patterns ZnTe nanostructures on Si (100) substrate using thermal evaporation is proposed by capillary Force Lithography (CFL) technique on a self-assembled sacrificial Polystyrene mask. Polystyrene thin films on Si substrates are used to fabricate surface micro-relief patterns. ZnTe nanoparticles have been deposited by thermal evaporation method. The deposited ZnTe nanoparticles properties were assessed by Atomic Force Microscope (AFM), Scanning Electron Microscope (SEM). SEM studies indicated that the particles are uniform in size and shape, well dispersed and spherical in shape. This study reports the micro-arrays of ZnTe nanoparticles on a self-assembled sacrificial PS mask using a capillary flow photolithography process which showed excellent, morphological properties which can be used in photovoltaic devices for anti-reflection applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Nanodisk fabrication by nanosphere lithography

Top-down fabrication of regular nanodisk arrays from an A{sub 3}B{sub 5} epitaxial heterostructure containing quantum well is demonstrated. Dry ion etching through the mask was emloyed. The spin-coated monolayer of polystyrene nanospheres served as a mask. Nanodisk diameter could be precisely controlled by oxygen plasma resizing of spheres after deposition. Nanodisks with diameters down to 200 nm were made.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I{sub 1} type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaN QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Portable diagnostic package for Thomson scattering and optical emission spectroscopy on Princeton field-reversed configuration 2 (PFRC 2)

An Advanced Research Projects Agency-Energy funded diagnostic system has been deployed to the Princeton field-reversed configuration 2 (PFRC-2) device, located at Princeton Plasma Physics Laboratory. The Portable Diagnostic Package (PDP), designed at Oak Ridge National Laboratory, allows for the measurement of Thomson Scattering (TS) for electron density and temperature and Optical Emission Spectroscopy (OES) for ion temperature, impurity density, and ion velocity. A tunable spectrometer on the PDP with three gratings provides the flexibility to measure low (1 eV) and high (1000 eV) electron temperature ranges from TS. Additionally, using a second spectrometer, the OES diagnostic can survey light emission from various ion excitation levels for wide wavelength ranges. The electron density (<2 × 10 19 m –3 ) of plasmas generated in PFRC-2 has been below the PDP TS discrimination threshold, which has made TS signal detection challenging against a high-background of laser stray light. The laser stray light was iteratively reduced by making modifications to the entrance and exit geometry on PFRC-2. Rayleigh scattering experiments on PFRC have yielded the TS discrimination sensitivity to be >1 × 10 20 m –3 for the PDP. A recently implemented narrow-band notch spectral filter that masks the second harmonic 532 nm Nd:YAG laser wavelength has increased the system’s TS light discrimination sensitivity 65 times compared to the instance when the notch filter was not implemented. The hardware implementation including design changes to the flight tubes and Brewster windows will be discussed, along with results from Rayleigh and rotational Raman scattering sensitivity analyses, which were used to establish a quantitative figure of merit on the system performance. Further, the Raman scattering calibration with the notch filter has improved the PDP electron density threshold to 1 ± 0.5 × 10 18 m –3 .

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Temperature sensor based on a polymer diffraction grating with silver nanoparticles

The method is suggested for producing an optical temperature noncontact sensor on a polymer polymethylmethacrylate (PMMA) substrate with a diffraction optical element formed by implanting low-energy high-dose silver ions through a surface mask. Ion implantation is performed at an energy of 30 keV, a radiation dose of 5.0 × 10{sup 16} ion cm{sup −}2 and an ion beam current density of 2 μA cm{sup −}2 through a surface metal mask having the form of grid with square periodical holes (cells) of size 25 μm. In the course of implantation, silver nanoparticles are produced in periodical unmasked domains of irradiated PMMA. Operation of the temperature sensor on diffraction microstructures made of polymer with silver nanoparticles is demonstrated in the range from 20 °C to 95 °C by testing it with a probe radiation of a He – Ne laser. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Metasurface-generated complex 3-dimensional optical fields for interference lithography

Significance Fast submicrometer-scale 3D printing techniques are of interest for various applications ranging from photonics and electronics to tissue engineering. Interference lithography is a versatile 3D printing method with the ability to generate complicated nanoscale structures. Its application, however, has been hindered by either the complicated setups in multibeam lithography that cause sensitivity and impede scalability or the limited level of control over the fabricated structure achievable with mask-assisted processes. Here, we show that metasurface masks can generate complex volumetric intensity distributions with submicrometer scales for fast and scalable 3D printing. These results push the limits of optical devices in controlling the light intensity distribution and significantly increase the realm of possibilities for 3D printing.

Science & Technology - Other Topics↗