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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Modern steels at atomic and nanometre scales

Processing bulk nanocrystalline materials for structural applications still poses a difficult challenge, particularly in achieving an industrially viable process. Recent work in ferritic steels has proved that it is possible to move from ultrafine to nanoscale by exploiting the bainite reaction without the use of severe deformation, rapid heat treatment or mechanical processing. This new generation of steels has been designed in which transformation at low temperature leads to a nanoscale structure consisting of extremely fine, 20–40 nm thick plates of bainitic ferrite and films of retained austenite. Finally, a description of the characteristics and significance of this remarkable microstructure is provided here.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

A Novel Laser 3D Printing Method for the Advanced Manufacturing of Protonic Ceramics

Protonic ceramics (PCs) with high proton conductivity at intermediate temperatures (300–600 °C) have attracted many applications in energy conversion and storage devices such as PC fuel/electrolysis cells, PC membrane reactors, hydrogen pump, hydrogen or water-permeable membranes, and gas sensors. One of the essential steps for fulfilling the practical utilization of these intermediate-temperature PC energy devices is the successful development of advanced manufacturing methods for cost-effectively and rapidly fabricating them with high energy density and efficiency in a customized demand. In this work, we developed a new laser 3D printing (L3DP) technique by integrating digital microextrusion-based 3D printing and precise and rapid laser processing (sintering, drying, cutting, and polishing), which showed the capability of manufacturing PCs with desired complex geometries, crystal structures, and microstructures. The L3DP method allowed the fabrication of PC parts such as pellets, cylinders, cones, films, straight/lobed tubes with sealed endings, microchannel membranes, and half cells for assembling PC energy devices. The preliminary measurement of the L3DP electrolyte film showed a high proton conductivity of ≈7 × 10−3 S/cm. This L3DP technique not only demonstrated the potential to bring the PCs into practical use but also made it possible for the rapid direct digital manufacturing of ceramic-based devices.

08 HYDROGEN↗
DOE OSTI2014

Effect of the spin-twist structure on the spin-wave dynamics in Fe{sub 55}Pt{sub 45}/Ni{sub 80}Fe{sub 20} exchange coupled bi-layers with varying Ni{sub 80}Fe{sub 20} thickness

We have investigated optically induced ultrafast magnetization dynamics of a series of Fe{sub 55}Pt{sub 45}/Ni{sub 80}Fe{sub 20} exchange spring bi-layers with varying Ni{sub 80}Fe{sub 20} thickness. Rich spin-wave spectra are observed; whose frequency shows a strong dependence on the Ni{sub 80}Fe{sub 20} layer thickness. Micromagnetic simulations based on a simplified magnetic microstructure were able to reproduce the experimental data qualitatively. The spin twist structure introduced in the Ni{sub 80}Fe{sub 20} layer gives rise to new modes in the composite system as opposed to the bare Ni{sub 80}Fe{sub 20} films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of Mg doping on the structural and free-charge carrier properties of InN films

We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 10{sup 18} cm{sup −3} to 3.9 × 10{sup 21} cm{sup −3}. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 10{sup 18} cm{sup −3} ≲ [Mg] ≲ 9.0 × 10{sup 19} cm{sup −3}. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Fabrication of large area flexible nanoplasmonic templates with flow coating

Here, we describe the development of a custom-built two-axis flow coater for the deposition of polymeric nanosphere monolayers used in the fabrication of large area nanoplasmonic films. The technique described here has the capability of depositing large areas (up to 7” x 10”) of self-assembled monolayers of polymeric nanospheres onto polyethylene terephthalate (PET) films. Here, three sets of film consisting of different diameter (ranging from 100 to 300 nm) polymeric nanospheres were used to demonstrate the capabilities of this instrument. To improve the surface wettability of the PET substrates during wet-deposition we enhanced the wettability by using a forced air blown-arc plasma treatment system. Both the local microstructure, as confirmed by scanning electron microscopy, describing monolayer and multilayer coverage, and the overall macroscopic uniformity of the resultant nanostructured film were optimized by controlling the relative stage to blade speed and nanosphere concentration. As this is a scalable technique, large area films such as the ones described here, have a variety of crucial emerging applications in areas such as energy, catalysis, and chemical sensing.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Ca Addition Effects on the Microstructure, Tensile and Corrosion Properties of Mg Matrix Alloy Containing 8 wt.% Mg{sub 2}Si

The microstructure, tensile properties and corrosion behavior of the Mg-8 wt.% Mg{sub 2}Si-x%Ca alloy have been studied by the use of optical microscopy, scanning electron microscopy equipped with energy-dispersive spectroscopy, x-ray diffraction, standard tensile testing, polarization test and electrochemical impedance spectroscopy (EIS) measurements. Microstructural studies indicated that Ca modifies both primary and eutectic Mg{sub 2}Si phase. It was found that the average size of primary Mg{sub 2}Si particles is about 60 μm, which is dropped by about 82% in the alloy containing 0.05 wt.% Ca. By the addition of different Ca contents, Ca-rich intermetallics (i.e., CaSi{sub 2} and CaMgSi) were formed. The modification mechanism of adding Ca during solidification was found to be due to the strong effect of CaMgSi phase as a heterogonous nucleation site, apart from CaSi{sub 2} which was reported before, for Mg{sub 2}Si intermetallics. Tensile testing results ascertained that Ca addition enhances both ultimate tensile strength (UTS) and elongation values. The optimum amount of Ca was found to be 0.1 wt.%, which improved UTS and elongation values from about 130 MPa and 2% to 165 MPa and 5.5%, whereas more Ca addition (i.e., 3 wt.%) reduced the tensile properties of the alloy to about 105 MPa and 1.8%, which can be due to the formation of CaMgSi intermetallics with deteriorating needle-like morphology. Polarization and EIS tests also showed that the Mg-3%Si-0.5%Ca alloy pronounces as the best anti-corrosion alloy. Nevertheless, further added Ca (up to 3 wt.%) deteriorated the corrosion resistance due to predominance of worse galvanic coupling effect stemmed from the presence of stronger CaMgSi cathode in comparison with Mg{sub 2}Si. With higher Ca additions, an adverse effect was seen on corrosion resistance of the Mg-3%Si alloy, as a result of forming a weak film on the alloy specimen surface.

36 MATERIALS SCIENCE↗
NASA NTRS1975

Processing eutectics in space

The investigations of directional solidification have indicated the necessity of establishing a secure foundation in earth-based laboratory processing in order to properly assess low-gravity processing. Emphasis was placed on evaluating the regularity of microstructure of the rod-like eutectic Al-Al3Ni obtained under different conditions of growth involving the parameters of thermal gradient, solidification rate, and interfacial curvature. In the case of Al-Al3Ni, where the Al3Ni phase appears as facets rods, solidification rate was determined to be a controlling parameter. Zone melting of thin eutectic films showed that for films of the order of 10 to 20 micrometers thick, the extra surface energy appears to act to stabilize a regular microstructure. The results suggest that the role of low-gravity as provided in space-laboratory processing of materials is to be sought in the possibility of generating a higher thermal gradient in the solidifying ingot for a given power input-output arrangement than can be obtained under normal one-g processes.

Douglas, F. C.↗
DOE OSTI2014

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al{sub 2}O{sub 3} by plasma-assisted molecular beam epitaxy

We report on plasma-assisted molecular beam epitaxial growth of GaN nanowires (NWs) on Si(111) substrates with a thin amorphous Al{sub 2}O{sub 3} buffer layer deposited by atomic layer deposition. Comparison of nucleation kinetics shows that presence of amorphous Al{sub 2}O{sub 3} buffer significantly enhances spontaneous nucleation of GaN NWs. Slower nucleation was observed on partially amorphous silicon nitride films. No growth of NWs was found on sapphire substrate under the same growth conditions which we explain by a low density of defects on monocrystalline substrate surface where NWs may nucleate. Our finding shows that tuning of substrate microstructure is an efficient tool to control rate of self-induced nucleation of GaN NWs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magnetron sputter deposition of boron carbide in Ne and Ar plasmas

Conventional magnetron sputter deposition of B 4 C uses Ar as the working gas. In this report we explore the magnetron sputter deposition of B 4 C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B 4 C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Light trapping in thin-film solar cells measured by Raman spectroscopy

In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (μc-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442 nm, 514 nm, 633 nm, and 785 nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the μc-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the μc-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Alkali halide microstructured optical fiber for X-ray detection

Microstructured optical fibers containing alkali halide scintillation materials of CsI(Na), CsI(Tl), and NaI(Tl) are presented. The scintillation materials are grown inside the microstructured fibers using a modified Bridgman-Stockbarger technique. The x-ray photon counts of these fibers, with and without an aluminum film coating are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The photon count results show significant variations in the fiber output based on the materials. The alkali halide fiber output can exceed that of the CdTe detector, dependent upon photon counter efficiency and fiber configuration. The results and associated materials difference are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Strain-rate dependent deformation mechanisms in single-layered Cu, Mo, and multilayer Cu/Mo thin films

Here, strain-rate sensitivity and rate-dependent hardness, over a range of 10 -2 to 10 2 s -1 , of sputter-deposited single-layered Cu, Mo, and 5 nm Cu/ 5 nm Mo, and 100 nm Cu/ 100 nm Mo multilayer films with a total film thickness of 5 μm were measured using nanoindentation. The plastic zone underneath the nanoindents was characterized via cross-sectional transmission electron microscopy (XTEM). The multilayer films exhibited enhanced hardness but slightly reduced strain-rate sensitivity with decreasing layer thickness from 100 nm to 5 nm. Only the 5 nm Cu/ 5 nm Mo multilayer film exhibited shear bands underneath the nanoindents, and the size of the shear bands increased with increasing strain rate. In contrast, the 100 nm Cu/ 100 nm Mo multilayer film exhibited material pile-up around the indents and significant nanotwinning within Cu grains. The effect of strain rate and layer thickness on the hardness and strain rate sensitivity of the multilayer thin films is interpreted using a modified confined layer slip (CLS) model. The reduced rate sensitivity at 5 nm as compared to 100 nm correlates with abundant growth nanotwins in the Cu grains in 100 nm and formation of shear bands in 5 nm multilayers. In single layer films, a substructure with a high density of dislocations was observed consistent with the plastic strain gradient in the indent plastic zone. No evidence of deformation twins was noted in any of the samples.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Growth of GaAs{sub 1−x}Bi{sub x} by molecular beam epitaxy: Trade-offs in optical and structural characteristics

Recent work has shown that Bi incorporation increases during molecular beam epitaxy (MBE) when surface processes are kinetically limited through increased growth rate. Herein we explore how the structural and optical properties of GaAs{sub 1−x}Bi{sub x} films are modified when grown under conditions with varying degrees of kinetic limitations realized through growth temperature and growth rate changes. Within the typical window of MBE growth conditions for GaAs{sub 1−x}Bi{sub x}, we compare films with similar (∼3%) compositions grown under conditions of reduced kinetic limitations, i.e., relatively low gallium supersaturation achieved at higher temperatures (∼350 °C) and lower growth rates (∼0.5 μm/h), to those grown farther from equilibrium, specifically, higher supersaturation achieved at lower growth temperatures (∼290 °C) and higher growth rates (∼1.4 μm/h). Both the x-ray diffraction full width at half maximum of the omega-2theta scan and the 300 K photoluminescence intensity increase when samples are grown under less kinetically limited conditions. We interpret these findings in relation to the incorporation of Bi-related microstructural defects that are more readily formed during less kinetically limited growth. These defects lead to enhanced luminescence efficiency due to the spatial localization of carriers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Assessing the potential of ToF-SIMS as a complementary approach to investigate cement-based materials — Applications related to alkali–silica reaction

In this study, the potential of time-of-flight secondary ion mass spectrometry (ToF-SIMS) for the application in cement-based materials is assessed in combination and comparison with scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). Mortar, concrete and samples from model systems providing products formed by the alkali–silica reaction (ASR) were studied. ToF-SIMS provides qualitative data on alkalis in cases where EDX reaches its limits in regard to detectable concentration, lateral resolution and atomic number of the elements. Due to its high in-depth resolution of a few atomic monolayers, thin layers of reaction products can be detected on the surfaces and chemically analyzed with ToF-SIMS. Additionally, it delivers information on the molecular conformation within the ASR product, its hydrogen content and its isotope ratios, information not provided by EDX. Provided the samples are carefully prepared, ToF-SIMS opens up new possibilities in the analysis of cement-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Structure Control of a π-Conjugated Oligothiophene-Based Liquid Crystal for Enhanced Mixed Ion/Electron Transport Characteristics

Developing soft materials with both ion and electron transport functionalities is of broad interest for energy-storage and bioelectronics applications. Rational design of these materials requires a fundamental understanding of interactions between ion and electron conducting blocks along with the correlation between the microstructure and the conduction characteristics. Here, we investigate the structure and mixed ionic/electronic conduction in thin films of a liquid crystal (LC) 4T/PEO4, which consists of an electronically conducting quarterthiophene (4T) block terminated at both ends by ionically conducting oligoethylenoxide (PEO4) blocks. Using a combined experimental and simulation approach, 4T/PEO4 is shown to self-assemble into smectic, ordered, or disordered phases upon blending the materials with the ionic dopant bis(trifluoromethane)sulfonimide lithium (LiTFSI) under different LiTFSI concentrations. Interestingly, at intermediate LiTFSI concentration, ordered 4T/PEO4 exhibits an electronic conductivity as high as 3.1 × 10 –3 S/cm upon being infiltrated with vapor of the 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) molecular dopant while still maintaining its ionic conducting functionality. This electronic conductivity is superior by an order of magnitude to the previously reported electronic conductivity of vapor co-deposited 4T/F4TCNQ blends. Furthermore, our findings demonstrate that structure and electronic transport in mixed conduction materials could be modulated by the presence of the ion transporting component and will have important implications for other more complex mixed ionic/electronic conductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Non-contact direct measurement of the magnetocaloric effect in thin samples

An experimental setup, based on a non-contact temperature sensor, is proposed to directly measure the magnetocaloric effect of samples few micrometers thick. The measurement of the adiabatic temperature change of foils and ribbons is fundamental to design innovative devices based on magnetocaloric thin materials or micro-structuring bulk samples. The reliability of the proposed setup is demonstrated by comparing the measurements performed on a bulk gadolinium sample with the results obtained by an experimental setup based on a Cernox bare chip thermoresistance and by in-field differential scanning calorimetry. We show that this technique can measure the adiabatic temperature variation on gadolinium sheets as thin as 27 μm. Heat transfer simulations are added to describe the capability of the presented technique.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Cryogenic spatial–temporal imaging of surface photocarrier dynamics in MAPbI 3 films at the single grain level

We use cryogenic spatial–temporal photoluminescence (PL) imaging measurements down to 10 K and with short-wavelength, 405 nm laser excitation to study surface charge generation, trapping, and recombination at single bright and dark grains as well as their boundaries in model methylammonium lead iodide (MAPbI 3 ) polycrystalline thin films. These salient conditions are shown to be critical for identifying both the detrimental and cooperative roles of grain microstructures where the dark grains serve as the PL quenching center, while the grain boundaries are largely benign and may promote electron–hole separation.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of RF power density on micro- and macro-structural properties of PECVD grown hydrogenated nanocrystalline silicon thin films

This contribution provides the comparison between micro- and macro-structure of hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by plasma enhanced chemical vapor deposition (PECVD) technique under different RF power densities (P{sub RF}: 100−444 mW/cm{sup 2}). Micro-structure is assessed through grazing angle X-ray diffraction (GAXRD), while macro-structure is followed by surface and cross-sectional morphology via field emission scanning electron microscopy (FE-SEM). The nanocrystallite size (∼5 nm) and FE-SEM surface conglomerate size (∼40 nm) decreases with increasing P{sub RF}, crystalline volume fraction reaches maximum at 162 mW/cm{sup 2}, FE-SEM cross-sectional structure is columnar except for the film grown at 162 mW/cm{sup 2}. The dependence of previously determined ‘oxygen content–refractive index’ correlation on obtained macro-structure is investigated. Also, the effect of P{sub RF} is discussed in the light of plasma parameters during film deposition process and nc-Si:H film growth models.

36 MATERIALS SCIENCE↗