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At least 829 records · Page 46

Empirical modeling of dopability in diamond-like semiconductors

Carrier concentration optimization has been an enduring challenge when developing newly discovered semiconductors for applications (e.g., thermoelectrics, transparent conductors, photovoltaics). This barrier has been particularly pernicious in the realm of high-throughput property prediction, where the carrier concentration is often assumed to be a free parameter and the limits are not predicted due to the high computational cost. In this work, we explore the application of machine learning for high-throughput carrier concentration range prediction. Bounding the model within diamond-like semiconductors, the learning set was developed from experimental carrier concentration data on 127 compounds ranging from unary to quaternary. The data were analyzed using various statistical and machine learning methods. Accurate predictions of carrier concentration ranges in diamond-like semiconductors are made within approximately one order of magnitude on average across both p- and n-type dopability. The model fit to empirical data is analyzed to understand what drives trends in carrier concentration and compared with previous computational efforts. Lastly, dopability predictions from this model are combined with high-throughput quality factor predictions to identify promising thermoelectric materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Optical properties of a diamond NV color center from capped embedded multiconfigurational correlated wavefunction theory

Diamond defects are among the most promising qubits. Modeling their properties through accurate quantum mechanical simulations can further their development into robust units of information. We use the recently developed capped density functional embedding theory (capped-DFET) with the multiconfigurational n-electron valence second-order perturbation theory to characterize the electronic excitation energies for different spin manifolds of the well-characterized negatively charged substitutional N defect adjacent to a vacancy (V C ) in diamond (N C V C − ). We successfully reproduce vertical excitation energies for both triplet and singlet states of N C V C − with errors < 0.1 eV. Unlike other embedding methods, capped-DFET exhibits robust predictions that are approximately independent of the embedded cluster size: it only requires a cluster to contain the defect atoms and their nearest neighbors (as small as a 40-atom capped cluster). Furthermore, our method is free from slowly converging Coulomb interactions between charged defects, and thus also only weakly dependent on supercell size.

Chemistry↗

Cooling the motion of diamond nanocrystals in a magneto-gravitational trap in high vacuum

Levitated diamond nanocrystals with nitrogen-vacancy (NV) centres in high vacuum have been proposed as a unique system for experiments in fundamental quantum mechanics, including the generation of large quantum superposition states and tests of quantum gravity. This system promises extreme isolation from its environment while providing quantum control and sensing through the NV centre spin. While optical trapping has been the most explored method of levitation, recent results indicate that excessive optical heating of the nanodiamonds under vacuum may make the method impractical with currently available materials. Here, we study an alternative magneto-gravitational trap for diamagnetic particles, such as diamond nanocrystals, with stable levitation from atmospheric pressure to high vacuum. Magnetic field gradients from permanent magnets confine the particle in two dimensions, while confinement in the third dimension is gravitational. Furthermore, we demonstrate that feedback cooling of the centre-of-mass motion of a trapped nanodiamond cluster results in cooling of one degree of freedom to less than 1 K.

36 MATERIALS SCIENCE↗

Methane storage capabilities of diamond analogues

Methane can be an alternative fuel for vehicular usage provided that new porous materials are developed for its efficient adsorption-based storage. Herein, we search for materials for this application within the family of diamond analogues. We used density functional theory to investigate structures in which tetrahedral C atoms of diamond are separated by-CC-or-BN-groups, as well as ones involving substitution of tetrahedral C atoms with Si and Ge atoms. The adsorptive and diffusive properties of methane are studied using classical molecular simulations. Our results suggest that the all-carbon structure has the highest volumetric methane uptake of 280 VSTP/V at p = 35 bar and T = 298 K. However, it suffers from limited methane diffusion. Alternatively, the considered Si and Ge-containing analogies have fast diffusive properties but their adsorption is lower, ca. 172-179 VSTP/V, at the same conditions.

Haranczyk, M↗

First-principles studies of strongly correlated states in defect spin qubits in diamond

Using a recently developed quantum embedding theory, we present first-principles calculations of strongly correlated states of spin defects in diamond. Using this theory, effective Hamiltonians are constructed, which can be solved by classical and quantum computers; the latter promise a much more favorable scaling as a function of system size than the former. In particular, we report a study on the neutral group-IV vacancy complexes in diamond, and we discuss their strongly correlated spin-singlet and spin-triplet excited states. Finally, our results provide valuable predictions for experiments aimed at optical manipulation of these defects for quantum information technology applications.

74 ATOMIC AND MOLECULAR PHYSICS↗

Efficient graphite ring heater suitable for diamond-anvil cells to 1300 K

In order to generate homogeneous high temperatures at high pressures, a ring-shaped graphite heater has been developed to resistively heat diamond-anvil cell (DAC) samples up to 1300 K. By putting the heater in direct contact with the diamond anvils, this graphite heater design features the following advantages: (1) efficient heating: sample can be heated to 1300 K while the DAC body temperature remains less than 800 K, eliminating the requirement of a special alloy for the DAC; (2) compact design: the sample can be analyzed with in situ measurements, e.g., x-ray, optical, and electrical probes are possible. In particular, the side access of the heater allows for radial x-ray diffraction (XRD) measurements in addition to traditional axial XRD.

36 MATERIALS SCIENCE↗

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity.

36 MATERIALS SCIENCE↗

Graphene grown out of diamond

Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. Here, we report the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.

36 MATERIALS SCIENCE↗

MPACVD growth of single crystalline diamond substrates with PCD rimless and expanding surfaces

Single crystal diamond (SCD) growth was performed in optimized pocket substrate holders at a high pressure (240 Torr) and a high power density (∼1000 W/cm3). In an effort to overcome the challenges of growing large area SCD substrates without a corresponding polycrystalline diamond (PCD) rim, a growth recipe using these pocket holders was developed. This growth recipe controls the substrate temperature (Ts) and the incident microwave power (Pinc) in a prescribed function of growth time. Through this process, the feasibility to enlarge the SCD substrate in situ, i.e., during the growth itself is shown. By allowing the temperature to increase from ∼980 °C to 1040 °C, then reducing the temperature, and then allowing it to drift up again, the deposition process alternates between the fast growth of the different crystal directions (i.e., 〈110〉, 〈111〉, and 〈100〉) and a slow growth to smoothen the top surface. This leads to an increased lateral SCD growth. The slow growth of the crystal faces in turn leads to a smooth and enlarged top surface. Certain strategies such as the termination of the growth process at the appropriate time are critical in obtaining flat and smooth SCD surfaces without the formation of any PCD rim. The SCD substrates grown via this method have been analyzed by optical and scanning electron microscopies. The lateral SCD surface area increased between 1.7 and 2 times greater than the initial seed surface area during one continuous run. The deposited SCDs have high growth rates of ∼30 μm/h resulting in smooth, flat and rimless substrates, hence indicating the improvement in the quality and morphology of the deposited substrates.

Nad, Shreya↗

Thermal stability of simple tetragonal and hexagonal diamond germanium

Here, exotic phases of germanium, that form under high pressure but persist under ambient conditions, are of technological interest due to their unique optical and electrical properties. The thermal evolution and stability of two of these exotic Ge phases, the simple tetragonal (st12) and hexagonal diamond (hd) phases, are investigated in detail. These metastable phases, formed by high pressure decompression in either a diamond anvil cell or by nanoindentation, are annealed at temperatures ranging from 280 to 320 °C for st12-Ge and 200 to 550 °C for hd-Ge. In both cases, the exotic phases originated from entirely pure Ge precursor materials. Raman microspectroscopy is used to monitor the phase changes ex situ following annealing. Our results show that hd-Ge synthesized via a pure form of a-Ge first undergoes a subtle change in structure and then an irreversible phase transformation to dc-Ge with an activation energy of (4.3 ± 0.2) eV at higher temperatures. St12-Ge was found to transform to dc-Ge with an activation energy of (1.44 ± 0.08) eV. Taken together with results from previous studies, this study allows for intriguing comparisons with silicon and suggests promising technological applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Implementation and application of the peak scaling method for temperature measurement in the laser heated diamond anvil cell

In this work, a new design for a double-sided high-pressure diamond anvil cell laser heating set-up is described. The prototype is deployed at beamline 12.2.2 of the Advanced Light Source at Lawrence Berkeley National Lab. Our compact design features shortened mechanical lever arms, which results in more stable imaging optics, and thus more user friendly and more reliable temperature measurements based on pyrometry. A modification of the peak scaling method was implemented for pyrometry, including an iterative method to determine the absolute peak temperature, thus allowing for quasi-real time temperature mapping of the actual hotspot within a laser-heated diamond anvil cell without any assumptions on shape, size, and symmetry of the hotspot and without any assumptions to the relationship between fitted temperature and peak temperature. This is important since we show that the relationship between peak temperature and temperature obtained by fitting the Planck function against the thermal emission spectrum averaged over the entire hotspot is not constant but depends on variable fitting parameters (in particular, the size and position of the fitting window). The accuracy of the method is confirmed through measuring melting points of metal wires at ambient pressure. Having absolute temperature maps in real time allows for more differentiated analyses of laser heating experiments. Finally, we present such an example of the pressure variations within a heated hotspot of AgI at a loaded base pressure of 3.8 GPa.

42 ENGINEERING↗

Fly scan apparatus for high pressure research using diamond anvil cells

In this paper, the hardware and software used to execute fly scans at Sector 16 of the Advanced Photon Source is described. The system design and capabilities address dimensions and time scales relevant to samples in high pressure diamond anvil cells. The time required for routine sample positioning and centering is significantly reduced and, more importantly, the time savings associated with fly scanning makes it feasible for users to routinely generate two-dimensional x-ray transmission and x-ray diffraction maps. Consequently, this facilitates an important shift in high pressure research as experimentalists embrace the study of heterogeneous and minute sample volumes in the diamond anvil cell.

47 OTHER INSTRUMENTATION↗

Toward a systematic improvement of the fixed-node approximation in diffusion Monte Carlo for solids—A case study in diamond

While Diffusion Monte Carlo (DMC) is in principle an exact stochastic method for ab initio electronic structure calculations, in practice, the fermionic sign problem necessitates the use of the fixed-node approximation and trial wavefunctions with approximate nodes (or zeros). This approximation introduces a variational error in the energy that potentially can be tested and systematically improved. Here, we present a computational method that produces trial wavefunctions with systematically improvable nodes for DMC calculations of periodic solids. These trial wavefunctions are efficiently generated with the configuration interaction using a perturbative selection made iteratively (CIPSI) method. A simple protocol in which both exact and approximate results for finite supercells are used to extrapolate to the thermodynamic limit is introduced. This approach is illustrated in the case of the carbon diamond using Slater–Jastrow trial wavefunctions including up to one million Slater determinants. Fixed-node DMC energies obtained with such large expansions are much improved, and the fixed-node error is found to decrease monotonically and smoothly as a function of the number of determinants in the trial wavefunction, a property opening the way to a better control of this error. The cohesive energy extrapolated to the thermodynamic limit is in close agreement with the estimated experimental value. Interestingly, this is also the case at the single-determinant level, thus, indicating a very good error cancellation in carbon diamond between the bulk and atomic total fixed-node energies when using single-determinant nodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing

Carrier-transport mechanisms are studied in high-purity diamond irradiated with 6 MeV electrons in the dose range of 10 12 –10 16 cm -2 and annealed at different temperatures up to 1450°C. Lifetimes and diffusion coefficients are extracted using two pump–probe techniques based on free-carrier absorption and transient-grating principles and then correlated with the corresponding defect evolution from spectroscopic measurements. Furthermore, the neutral monovacancy is revealed as the main carrier recombination center in the as-irradiated diamond, providing bipolar carrier lifetimes of a few nanoseconds at the highest irradiation dose. Carrier-capture cross sections are reduced during annealing as vacancies aggregate into divacancies at ≤1000°C and extended vacancy clusters at 1450°C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Coupling of a single tin-vacancy center to a photonic crystal cavity in diamond

In this work, we demonstrate optical coupling between a single tin-vacancy (SnV) center in diamond and a free-standing photonic crystal nanobeam cavity. The cavities are fabricated using quasi-isotropic etching and feature experimentally measured quality factors as high as ~11000. We investigate the dependence of a single SnV center's emission by controlling the cavity wavelength using a laser-induced gas desorption technique. Under resonance conditions, we observe an intensity enhancement of the SnV emission by a factor of 12 and a 16-fold reduction of the SnV lifetime. Based on the large enhancement of the SnV emission rate inside the cavity, we estimate the Purcell factor for the SnV zero-phonon line to be 37 and the coupling efficiency of the SnV center to the cavity, the β factor, to be 95%. Our work paves the way for the realization of quantum photonic devices and systems based on efficient photonic interfaces using the SnV color center in diamond.

42 ENGINEERING↗

Using silicon-vacancy centers in diamond to probe the full strain tensor

An ensemble of silicon vacancy (SiV−) centers in diamond is probed using two-pulse correlation spectroscopy and multidimensional coherent spectroscopy. Two main distinct families of SiV− centers are identified, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Measurements are made at multiple points on the sample surface, and variations in the strain tensor are observed.

Bates, Kelsey M. (ORCID:0000000324961124)↗

Initial evaluation of a multimodal diamond sensor for simultaneous temperature and radiation measurements

Several experimental disciplines require simultaneous neutron flux and temperature monitoring. This paper provides the groundwork on a diamond sensor concept that could be used in harsh environments where the limits of current technologies are exceeded. Here, we present initial results on the functionality of a multimodal diamond sensor, which can simultaneously sense the presence of alpha particles at a few counts per second at temperatures up to 494 K. Such a sensor may also have applications where both charged particles or neutron detection and temperature measurement are simultaneously desired.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of material composition of diamond field emission array cathodes on quality of transversely shaped beams

Diamond field emitter array field emission cathodes (DFEA FECs) are attractive for the next generation of injectors due to their ability to produce transversely shaped beams without the need for complex masking or laser schemes. However, reliability of this cathode technology remains a challenging issue as principal mechanisms guiding and allowing for output beam shaping remained poorly understood. Here, this paper reports the results of testing two DFEA FECs with the same pattern and emitter tip geometry. Although both cathodes were able to sustain gradients of 44 MV/m and produce maximum output integral charge of 0.5 nC per radio frequency pulse, their emission patterns were different. One cathode did not produce a shaped beam, while the other one did. This difference was explained by the extent of the local variations of the diamond material across the arrays as discovered by spatially resolved Raman spectroscopy. The main practical takeaways were (i) tip sharpness was not a prerequisite for producing a shaped beam and instead (ii) material characteristics resulting in different cathode ballast resistance affected emission spatial uniformity across the array and hence the beam shaping.

36 MATERIALS SCIENCE↗