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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 829 records · Page 46
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗
NASA NTRS1983

Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

Brucker, G. J.↗
NASA NTRS1983

The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices

This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

Stassinopoulos, E. G.↗
NASA NTRS1984

Chip level modeling of LSI devices

The advent of Very Large Scale Integration (VLSI) technology has rendered the gate level model impractical for many simulation activities critical to the design automation process. As an alternative, an approach to the modeling of VLSI devices at the chip level is described, including the specification of modeling language constructs important to the modeling process. A model structure is presented in which models of the LSI devices are constructed as single entities. The modeling structure is two layered. The functional layer in this structure is used to model the input/output response of the LSI chip. A second layer, the fault mapping layer, is added, if fault simulations are required, in order to map the effects of hardware faults onto the functional layer. Modeling examples for each layer are presented. Fault modeling at the chip level is described. Approaches to realistic functional fault selection and defining fault coverage for functional faults are given. Application of the modeling techniques to single chip and bit slice microprocessors is discussed.

Armstrong, J. R.↗
NASA NTRS1985

SAW-Modulated Image Device

Imaging device uses surface-acoustic-wave (SAW) charge transfer for image readout. Spatial resolution of image changed electronically by changing frequency of applied signal. Surface acoustic waves create traveling longitudinal electric fields. These fields create potential wells that carry along stored charges. Charges injected into wells by photoelectric conversion when light strikes device.

Benz, H. F.↗
NASA NTRS1986

Testing Electronic Devices for Single-Event Upset

Report prepared describes equipment and summarizes both pretest and onsite procedures for testing of digital electronic devices for susceptibility to single-event upset. Term "single-event upset" denotes variety of temporary or permanent bit flips or latchup induced by single particles of ionizing radiation. Vacuum chamber houses device under test while exposed to ion beam. Vacuum chamber and associated equipment must be brought to ion-beam facility for test.

Nichols, D. K.↗
NASA NTRS1984

Theory underlying the peripheral vision horizon device

Peripheral Vision Horizon Device (PVHD) theory states that the likelihood of pilot disorientation in flight is reduced by providing an artificial horizon that provides orientation information to peripheral vision. In considering the validity of the theory, three areas are explored: the use of an artificial horizon device over some other flight instrument; the use of peripheral vision over foveal vision; and the evidence that peripheral vision is well suited to the processing of orientation information.

Money, K. E.↗
NASA NTRS1984

Full scale experiments into the use of large eddy breakup devices for drag reduction on aircraft

An experimental investigation in flight was performed to explore the feasibility of using LEBU (Large-Eddy-Breakup) devices to reduce the drag of aircraft. Two geometrical shapes of ribbons were used, and the development of local skin friction was monitored downstream. The aircraft was a swept-wing attack aircraft, and the flights covered the entire subsonic regime from M=0.92 down to stall conditions; flight altitudes were 1, 4.5, 7 and 10 km to explore various combinations of angle of attack, Mach - and Reynolds numbers. Some information was obtained concerning the turbulence characteristics downstream, and a discussion of the downstream amplification due to the drag at the device is also presented.

Bertelrud, A.↗
NASA NTRS1984

Adjustable indicating device for load position

An indicating device designed to provide an electrical signal relative to the position of a load is described. The device has a central housing with two wing structures on each side which support conventional switch means having cantilevered arms. Extending through the housing is a movable shaft that is spring biased to a forward extended position and adapted to respond against a load being positioned. The rear end of the movable shaft has an adjustable cam means which acts upon the cantilevered ams to cause a switching action upon shifting of the movable shaft by a load.

Heller, C.↗
NASA NTRS1985

Approach for Service Life Extension of Explosive Devices for Aircraft Escape Systems

The service life evaluation of explosive devices used in a wide variety of aircraft escape systems is described. The purpose was to develop a service extension approach, supported by tests on candidate devices, to evaluate the effects of service, age, and degradation, and allow responsible, conservative, service life determinations. An overview is given on the recommended approach and experimental procedures for accurate service evaluations with test results on rigid and flexible explosive transfer lines, one-way transfers, and flexible linear shaped charges.

Bement, L. J.↗
NASA NTRS1985

Performance of charge-injection-device infrared detector arrays at low and moderate backgrounds

Three 2 x 64 element charge injection device infrared detector arrays were tested at low and moderate background to evaluate their usefulness for space based astronomical observations. Testing was conducted both in the laboratory and in ground based telescope observations. The devices showed an average readout noise level below 200 equivalent electrons, a peak responsivity of 4 A/W, and a noise equivalent power of 3x10 sq root of W/Hz. Array well capacity was measured to be significantly smaller than predicted. The measured sensitivity, which compares well with that of nonintegrating discrete extrinsic silicon photoconductors, shows these arrays to be useful for certain astronomical observations. However, the measured readout efficiency and frequency response represent serious limitations in low background applications.

Mckelvey, M. E.↗
NASA NTRS1985

Crystal growth of device quality GaAs in space

The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

Gatos, H. C.↗
NASA NTRS1985

A device for generating motive force through the expansion of a non-elastic dense fluid

A device for generating motive force through the expansion of a dense, nonelastic fluid is described. It consists of an exterior block of a material with a low expansion coefficient, the interior of which is equipped with two circular cavities, both of which are equipped with rotors having blades constantly stressed outward by springs, so that they make contact with the cavity walls. One cavity is heated externally, and both have an exterior wall made of a friction ring which keeps the volume constant when their length varies. These cavities are interconnected by ducts which, at the inlet, are a prolongation of a peripheral groove made in the friction ring. The excess fluid produced by expansion flows through the groove, subsequently entering the cavity again after passing through a cooler located in the exterior part of the block. Both rotors are connected to gears with appropriate ratios which are equipped with a blocking device to guarantee that they always rotate in the same direction.

Muller, L.↗
NASA NTRS1985

Total integrated dose testing of solid-state scientific CD4011, CD4013, and CD4060 devices by irradiation with CO-60 gamma rays

The total integrated dose response of three CMOS devices manufactured by Solid State Scientific has been measured using CO-60 gamma rays. Key parameter measurements were made and compared for each device type. The data show that the CD4011, CD4013, and CD4060 produced by this manufacturers should not be used in any environments where radiation levels might exceed 1,000 rad(Si).

Dantas, A. R. V.↗
NASA NTRS1985

Airfoil large-eddy breakup devices for turbulent drag reduction

Large-eddy breakup devices were tested in a turbulent boundary layer at a momentum thickness Reynolds number of 7400. The drag reducing characteristics of thin, tapered plates, NACA 0009, and NACA 4409 airfoil shapes were determined and compared with lower Reynolds number data obtained with thin elements. The results indicate that at the higher Reynolds numbers of the present tests the thin, tapered plates in a tandem arrangement produced large downstream skin-friction reductions (maximum 0/40 percent/), and gave net drag reductions at least as large as for lower Reynolds numbers. Tandem NACA 0009 airfoils, which were approximately 10 times thicker than the thin plates, gave similar results with a maximum downstream skin-friction reduction of 0(30 percent) and a net drag reduction of 7 percent. The device drag for this shape was determined to be near laminar skin friction. The NACA 4409 airfoils suffered large regions of separated flow and produced no net drag reduction.

Anders, J. B.↗
NASA NTRS1985

Development of medical electronic devices in the APL space department

Several electronic devices for automatically correcting specific defects in a body's physiologic regulation and allowing approximately normal functioning are described. A self-injurious behavior inhibiting system (SIBIS) is fastened to the arm of a person with chronic self-injurious behavior patterns. An electric shock is delivered into the arm whenever the device senses above-threshold acceleration of the head such as occur with head-bangers. Sounding a buzzer tone with the shock eventually allows transference of the aversive stimulus to the buzzer so shocks are no longer necessary. A programmable implantable medication system features a solenoid pump placed beneath the skin and refueled by hypodermic needle. The pump functions are programmable and can deliver insulin, chemotherapy mixes and/or pain killers according to a preset schedule or on patient demand. Finally, an automatic implantible defibrillator has four electrodes attached directly to the heart for sensing electrical impulses or emitting them in response to cardiac fibrillation.

Newman, A. L.↗
NASA NTRS1985

Charge-injection-device 2 x 64 element infrared array performance

Three 2 x 64 element Si:Bi accumulation-mode charge-injection-device (CID) arrays were tested at low and moderate background to evaluate their usefulness for space-based astronomical observations. Testing was conducted both in the laboratory and in ground-based telescope IR observations. The devices showed an average readout noise level below 200 equivalent electrons, a peak responsivity of 4 A/W, and a noise equivalent power of 3 x 10 to the -17th W/sq rt Hz. This sensitivity compares well with that of nonintegrating discrete extrinsic silicon photoconductors. The array well capacity was significantly smaller than predicted. The measured sensitivity makes extrinsic silicon CID arrays useful for certain astronomical applications. However, their readout efficiency and frequency response represent serious limitations in low-background applications.

Mckelvey, M. E.↗
NASA NTRS1986

Variable Control Port for Fluidic Control Device

Volume and velocity of control flow independently adjustable. In proposed device rotatable D-shaped control sector throttles down control port or open it completely and set to any intermediate control-port crosssectional area. Although adjustment affects volume and control-port head loss, volume and velocity controlled independently by also adjusting fluidsupply pressure. Allows adjustment to wider range of control conditions and ability to maximize control efficiency. Fluidic control theory suggests possibility of improvement in control ratio of at least 2:1 over conventional devices.

Collins, Earl R., Jr.↗