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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Probing drift velocity dispersion in MAPbI 3 photovoltaic cells with nonlinear photocurrent spectroscopy
Conventional time-of-flight (TOF) measurements yield charge carrier mobilities in photovoltaic cells with time resolution limited by the RC time constant of the device, which is on the order of 0.1–1 µs for the systems targeted in the present work. We have recently developed an alternate TOF method, termed nonlinear photocurrent spectroscopy (NLPC), in which carrier drift velocities are determined with picosecond time resolution by applying a pair of laser pulses to a device with an experimentally controlled delay time. In this technique, carriers photoexcited by the first laser pulse are “probed” by way of recombination processes involving carriers associated with the second laser pulse. Here, we report NLPC measurements conducted with a simplified experimental apparatus in which synchronized 40 ps diode lasers enable delay times up to 100 µs at 5 kHz repetition rates. Carrier mobilities of ∼0.025 cm 2 /V/s are determined for MAPbI 3 photovoltaic cells with active layer thicknesses of 240 and 460 nm using this instrument. Here, our experiments and model calculations suggest that the nonlinear response of the photocurrent weakens as the carrier densities photoexcited by the first laser pulse trap and broaden while traversing the active layer of a device. Based on this aspect of the signal generation mechanism, experiments conducted with co-propagating and counter-propagating laser beam geometries are leveraged to determine a 60 nm length scale of drift velocity dispersion in MAPbI 3 films. Contributions from localized states induced by thermal fluctuations are consistent with drift velocity dispersion on this length scale.
Parallelizable microfluidic dropmakers with multilayer geometry for the generation of double emulsions
Microfluidic devices enable the production of uniform double emulsions with control over droplet size and shell thickness. However, the limited production rate of microfluidic devices precludes the use of monodisperse double emulsions for industrial-scale applications, which require large quantities of droplets. To increase throughput, devices can be parallelized to contain many dropmakers operating simultaneously in one chip, but this is challenging to do for double emulsion dropmakers. Production of double emulsions requires dropmakers to have both hydrophobic and hydrophilic channels, requiring spatially precise patterning of channel surface wettability. Precise wettability patterning is difficult for devices containing multiple dropmakers, posing a significant challenge for parallelization. In this paper, we present a multilayer dropmaker geometry that greatly simplifies the process of producing microfluidic devices with excellent spatial control over channel wettability. Wettability patterning is achieved through the independent functionalization of channels in each layer prior to device assembly, rendering the dropmaker with a precise step between hydrophobic and hydrophilic channels. We report this device geometry enables uniform wettability patterning of parallelized dropmakers, providing a scalable approach for the production of double emulsions.
Solid-state laser refrigeration of a composite semiconductor Yb:YLiF 4 optomechanical resonator
Photothermal heating represents a major constraint that limits the performance of many nanoscale optoelectronic and optomechanical devices including nanolasers, quantum optomechanical resonators, and integrated photonic circuits. Here, we demonstrate the direct laser refrigeration of a semiconductor optomechanical resonator >20 K below room temperature based on the emission of upconverted, anti-Stokes photoluminescence of trivalent ytterbium ions doped within a yttrium-lithium-fluoride (YLF) host crystal. Optically-refrigerating the lattice of a dielectric resonator has the potential to impact several fields including scanning probe microscopy, the sensing of weak forces, the measurement of atomic masses, and the development of radiation-balanced solid-state lasers. In addition, optically refrigerated resonators may be used in the future as a promising starting point to perform motional cooling for exploration of quantum effects at mesoscopic length scales, temperature control within integrated photonic devices, and solid-state laser refrigeration of quantum materials.
An Alternating, Current-Induced Electromagnetic Field for Membrane Fouling and Scaling Control during Desalination of Secondary Effluent from Municipal Wastewater
Membrane treatment of secondary effluent for reuse applications is a promising approach to expand water supplies and provide flexibility to water resources management. However, effective control of membrane fouling and scaling is crucial for cost-effective treatment and system resilience. This study compared the performance of antiscalants to an alternating, current-induced electromagnetic field (EMF) as an alternative pretreatment method to reverse osmosis. Compared to the no-EMF control experiments, the EMF device resulted in 13% higher water recovery and 366% lower flux decline at 60% of water recovery, along with 2–8 times lower precipitation of fouling and scaling, as evidenced by scanning electron microscope, energy dispersive X-ray spectroscopy, and chemical extraction analysis. The combination of the EMF with antiscalant was more effective for reducing membrane fouling and scaling, increasing water recoveries up to 89.3%, as compared to the EMF (67.5%) and antiscalant-only (73.6%) configurations. This is the first study to demonstrate synergistic effects of using an EMF in combination with antiscalants and could lead to lower pretreatment costs. Additional research is required to quantify the economics of this approach and to fully understand the fundamental mechanisms governing fouling and scaling control by an EMF.
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings
Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.
Control system backplane monitoring with FPGA
Described herein are various technologies for monitoring the backplane of a control system and detecting modifications of the control system (e.g., removal of modules, firmware updates, etc.). A monitoring device includes a field programmable gate array (FPGA), and is connected to the backplane of the control system. The monitoring device receives signals, by way of the backplane, that are communicated among modules connected to the backplane. The monitoring device detects a modification to the control system based upon the received signals.
Ultrafast Carrier–Lattice Interactions and Interlayer Modulations of Bi 2 Se 3 by X-ray Free-Electron Laser Diffraction
We report as a 3D topological insulator, bismuth selenide (Bi 2 Se 3 ) has potential applications for electrically and optically controllable magnetic and optoelectronic devices. Understanding the coupling with its topological phase requires studying the interactions of carriers with the lattice on time scales down to the sub-picosecond regime. Here we investigate the ultrafast carrier-induced lattice contractions and interlayer modulations in Bi 2 Se 3 thin films by time-resolved diffraction using an X-ray free-electron laser. The lattice contraction depends on the carrier concentration and is followed by an interlayer expansion accompanied by oscillations. Using density functional theory (DFT) and the Lifshitz model, the initial contraction can be explained by van der Waals force modulation of the confined free carrier layers. Our theory suggests that band inversion, related to a topological phase transition, is modulated by the expansion of the interlayer distance. These results provide insights into the topological phase control by light-induced structural change on ultrafast timescales.
The Dominant Influencer of Voltage Fluctuation (DIVF) for Power Distribution System
Variability in power generation at multiple consumer owned renewable energy sources can cause random voltage fluctuations, which may result in voltage violations at multiple nodes in a power distribution system. Traditional methods of voltage control are ineffective to address fast voltage variations. New dynamic methods of voltage control using end user devices can significantly benefit from the knowledge of the dominant influencer of voltage fluctuation (DIVF). This paper introduces information theoretic metrics to identify DIVF for every node in the power distribution system. A node can be DIVF due to its location in the distribution system and its capacity to generate and change its power. Use of traditional power flow algorithms to identify the DIVF is computationally complex which limits their use in real-time applications. In this work, information theoretic indicators of the DIVF are computed analytically in a computationally efficient manner, and their effectiveness to identify the DIVF is tested using the IEEE 69 node test system. From simulations, it is illustrated that differential entropy, Kullback-Leibler distance and Frechet distance are effective indicators of the DIVF and can successfully identify the most influential nodes providing the foundation for intelligent voltage control.
Communication-Constrained Robust Control and Learning of Grid-Connected
The electric grid of things (EGoT) promises great potential for innovative grid services by tapping into vast load flexibility. However, the unique characteristics of EGoT, being a part of the cyber-physical electric power system, present both opportunities and challenges, especially concerning supply-demand balancing, stability, and communication constraints. Traditionally, centralized control was employed to ensure balance and stability in power systems. However, with the massive influx of EGoT devices, new strategies are needed to efficiently coordinate and control these distributed devices for optimal grid operations. While some studies have explored efficiency and economic models, there remains a gap in ensuring reliability under everyday operations and resilience during extreme conditions. Addressing this gap, this project develops the technology for an Energy Service Interface (ESI) that includes novel pricing, control, learning, and distributed optimization algorithms, which will enable utilities to recruit EGoT assets for crucial grid services such as load flexibility, voltage regulation, and situation-awareness. The key novelty of the proposed technology is the careful distribution of learning and control functions across utility and EGoT asset owners such that provably efficient and resilient grid operations are attained while respecting communication and information-exchange constraints. Specifically, the project team develops machine-learning enhanced load modeling methods to allow EGoT asset owners to learn their load capability and flexibility, and develops pricing-based and decentralized learning-based control so that asset owners can coordinate to meet system-wide demand-supply balance and reliability goals. For extreme situations involving high-impact, low-probability catastrophic events (termed the “black-sky” events), the team also develops (1) a “Feeder-Operating Center-on-a-Laptop” (FOCAL) software that can assist utility personnel in leveraging EGoT assets to accelerate the service recovery of damaged feeders, and (2) distributed optimization algorithms that can coordinate the operation points of EGoT devices under severe communication constraints. The proposed technology has been extensively tested and evaluated through simulations and on a testbed. In summary, as we transition into a more interconnected and digital power grid era, our project’s findings and developments offer a pivotal step toward guaranteeing both efficiency and resilience in the face of both everyday operations and rare “black-sky” events.
An Interface–Type Memristive Device for Artificial Synapse and Neuromorphic Computing
Interface-type (IT) metal/oxide Schottky memristive devices have attracted considerable attention over filament-type (FT) devices for neuromorphic computing because of their uniform, filament-free, and analog resistive switching (RS) characteristics. The most recent IT devices are based on oxygen ions and vacancies movement to alter interfacial Schottky barrier parameters and thereby control RS properties. However, the reliability and stability of these devices have been significantly affected by the undesired diffusion of ionic species. Herein, a reliable interface-dominated memristive device is demonstrated using a simple Au/Nb-doped SrTiO 3 (Nb:STO) Schottky structure. The Au/Nb:STO Schottky barrier modulation by charge trapping and detrapping is responsible for the analog resistive switching characteristics. Because of its interface-controlled RS, the proposed device shows low device-to-device, cell-to-cell, and cycle-to-cycle variability while maintaining high repeatability and stability during endurance and retention tests. Furthermore, the Au/Nb:STO IT memristive device exhibits versatile synaptic functions with an excellent uniformity, programmability, and reliability. A simulated artificial neural network with Au/Nb:STO synapses achieves a high recognition accuracy of 94.72% for large digit recognition from MNIST database. These results suggest that IT resistive switching can be potentially used for artificial synapses to build next-generation neuromorphic computing.
LCOE Baseline for OE Buoy WEC Device
Capex numbers are in $/kW, Opex numbers in $/kW-yr. Cost Estimates provided herein are based on concept design and basic engineering data and have high levels of uncertainties embedded. This reference economic scenario was done for a very large device version of the OE Buoy technology, which is not presently on Ocean Energy's technology development pathway but will be considered in future business plan development. The DOE reference site condition is considered a low power-density site, compared with many of the planned initial deployment locations for the OE Buoy. Many of the sites considered for the initial commercial deployment of the OE buoy feature much higher wave power densities and shorter period waves. Both of these characteristics will improve the OE buoy's commercial viability.
Rotation Fixture Tooling
Lawrence Livermore National Lab has a need to rotate a device 180 degrees partway through device assembly to install components located on the opposite side of the assembly. This rotation operation must be done in a controlled matter to ensure safe handling of the device, which contains delicate instrumentation and hazardous materials. These devices can take several years and millions of dollars to design, manufacture, and build. The device may weigh up to 200 lbs, which exceeds the laboratory limit of 50 lbs for a one man manual lift or 100 lbs for a two man manual lift. In the past, an overhead crane and come-alongs were used to rotate the device, which was a complex operation that presented more opportunities for mistakes than the desired solution. Complexities of the prior solution include the required proper come-along set-up by skilled workers, several come-along configurations during the rotation of the device, and limited control during the rotation operation. A simpler engineered solution is desired.
Reduced Stochastic Resistive Switching in Organic-Inorganic Hybrid Memristors by Vapor-Phase Infiltration
We report resistive random-access memory (RRAM) is promising for next-generation data storage and non-von Neumann computing hardware. However, tuning device switching characteristics and particularly, controlling their stochastic variation remain as critical challenges. Here, new organic-inorganic hybrid RRAM media are reported whose bipolar switching characteristics and stochasticity can be controlled by vapor-phase infiltration (VPI), an ex situ hybridization technique derived from atomic layer deposition. Hybrid RRAMs based on AlO x -infiltrated SU-8 feature facile tunability of device switching voltages, off-state current, and on-off ratio by adjusting the amount of infiltrated AlO x in the hybrid. Furthermore, a significant reduction in the stochastic, cycle-to-cycle variations of switching parameters is enabled by AlO x infiltration, driven by the infiltration-induced changes in mechanical, dielectric, and chemical properties of organic medium and their influence on the dimension and formation characteristics of conductive filaments. Finally, multi-level analog switching potentially useful for neuromorphic applications are demonstrated, along with direct, one-step device patterning exploiting the negative-tone resist feature of SU-8. With the demonstrated control over switching characteristics and stochastic variation, combined with analog switching and one-step patterning capabilities, the results not only present a novel hybrid medium for RRAM applications but also showcase the utility of VPI for developing new, high-performance hybrid RRAM devices.
Improved performance of a near-field thermophotovoltaic device by a back gapped reflector
Various spectral control techniques can be applied to improve the performance of a thermophotovoltaic (TPV) device. For example, a back surface reflector (BSR) is a common structure to improve the performance of TPV devices. A conventional metal BSR structure enhances the photogeneration rate by increasing the absorption probability of photons via back surface reflections, affording a second chance for absorption. However, the effects of surface passivation and external luminescence introduced by BSR structures have been previously ignored, which potentially decreases the performance of TPV devices. Recently, a back gapped reflector (BGR) structure was proposed to greatly improve the performance of far-field TPV devices by reducing imperfect reflections at the semiconductor-metal interface. In the present work, the performance improvement on a thin-film, near-field InAs TPV device with a BGR is investigated, comparing its performance to that with a conventional metal BSR. Surface passivation conditions are also investigated to further improve the performance of TPV devices with back reflectors. Further, the output power and efficiency are calculated using an iterative model combining fluctuational electrodynamics and the full drift diffusion model. For the well-passivated condition, when the BSR is replaced by the BGR, the calculated conversion efficiency of the near-field TPV was improved from 16.4% to 21% and the output power was increased by 10%. Finally, the absorption of the back reflectors and external luminescence loss are analyzed to explain the performance improvement.
Universal Polarization Transformations: Spatial Programming of Polarization Scattering Matrices Using a Deep Learning‐Designed Diffractive Polarization Transformer
Abstract Controlled synthesis of optical fields having nonuniform polarization distributions presents a challenging task. Here, a universal polarization transformer is demonstrated that can synthesize a large set of arbitrarily‐selected, complex‐valued polarization scattering matrices between the polarization states at different positions within its input and output field‐of‐views (FOVs). This framework comprises 2D arrays of linear polarizers positioned between isotropic diffractive layers, each containing tens of thousands of diffractive features with optimizable transmission coefficients. After its deep learning‐based training, this diffractive polarization transformer can successfully implement N i N o = 10 000 different spatially‐encoded polarization scattering matrices with negligible error, where N i and N o represent the number of pixels in the input and output FOVs, respectively. This universal polarization transformation framework is experimentally validated in the terahertz spectrum by fabricating wire‐grid polarizers and integrating them with 3D‐printed diffractive layers to form a physical polarization transformer. Through this set‐up, an all‐optical polarization permutation operation of spatially‐varying polarization fields is demonstrated, and distinct spatially‐encoded polarization scattering matrices are simultaneously implemented between the input and output FOVs of a compact diffractive processor. This framework opens up new avenues for developing novel devices for universal polarization control and may find applications in, e.g., remote sensing, medical imaging, security, material inspection, and machine vision.
Fluorocarbon assisted atomic layer etching of SiO{sub 2} and Si using cyclic Ar/C{sub 4}F{sub 8} and Ar/CHF{sub 3} plasma
The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and compared to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.
Alignment system and associated method
An alignment system includes an optical sensor device that may be inserted into a passage of a body that is located between a fuel injector and a combustion chamber of an engine cylinder. The body is shaped to transmit fuel ejected from a spray hole in a fuel injector into the combustion chamber of the engine cylinder. The system also includes a controller that may examine output of the optical sensor device and determine whether the passage of the body is aligned with the spray hole of the fuel injector based on the output from the optical sensor device. The controller may change a position of one or more of the body or the fuel injector responsive to determining that the passage of the body is not aligned with the spray hole of the fuel injector.