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At least 829 records · Page 46

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DOE OSTI2020

Fabrication processes for effectively transparent contacts

In conventional solar cells with metal contacts, a non-negligible fraction of the incoming solar power is immediately lost either through absorption or reflection upon interaction with the contacts. Effectively transparent contacts (“ETCs”) for solar cells can be referred to as three-dimensional contacts designed to redirect incoming light onto a photoabsorbing surface of a solar cell. In many embodiments, the ETCs have triangular cross-sections. Such ETCs can be placed on a photoabsorbing surface such that at least one of their sides forms an angle with the photoabsorbing surface. In this configuration, the ETCs can redirect incident light onto the photoabsorbing surface, mitigating or eliminating reflection loss compared to conventional solar cells. When constructed in accordance with a number of embodiments of the invention, ETCs can be effectively transparent and highly conductive.

14 SOLAR ENERGY↗

DOE OSTI2021

Lanthanum Strontium Cobaltite-Alumina Fiber Composite Contact Material for Solid Oxide Fuel Cells

Short alumina fibers were added to LSCo contact material to enhance the contact strength and improve thermal cycle stability. Alumina fiber from 2.5 v% to 20 v% were mixed with LSCo and sintered at elevated temperatures. Sintering study showed retardation in densification of LSCo matrix with increasing alumina content. Sintered bulk strength exhibited similar behavior where strength greatly reduced at high alumina v%. Coefficient of thermal expansion showed consistent results with prediction from rule of mixture. Contact strength using anode supported YSZ bilayer coupons improved greatly with the presence of small amount (2.5-5 v%) alumina fibers and no substantial reduction after 10 deep thermal cycles. Candidate LSCo-Al2O3 contact materials was validated in a generic stack test fixture for 1000h at 800oC followed by 10 thermal cycles. Results of impedance analysis showed substantial improvement in thermal cycle stability as compared to LSCo parent materials.

SOFC cathode, strength, LSCo, alumina↗

DOE OSTI2018

Measuring Diode Resistivity of Passivated Contacts

A technique of examining carrier-selective, passivated contacts is presented, where the contact resistivity is found from the measured diode characteristic. Importantly, this extends the understanding of a passivated contact's resistivity to the case where it is also used to form an emitter or p-n junction.

14 SOLAR ENERGY↗

DOE OSTI2021

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Polysilicon on silicon oxide (poly-Si/SiO x ) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8 x 10^4 to 4.5 x 10^7 cm^-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm^2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm^2.

amorphous Si↗

NASA NTRS1966

Sliding electrical contact materials

The results of research programs to develop sliding electrical contact materials, both brushes and slip rings, are discussed. Problems attendant to operating sliding contacts in a vacuum are defined; limitations of commercial materials in solving these problems are described, and special materials and surface finish conditions which have resulted in solutions to these problems are presented. Data from operational tests on the newly developed materials are compared with similar data obtained from materials now used as standards in consumer products. Possible commercial applications of the more efficient sliding contact materials are discussed briefly.

Sliding contact↗

DOE OSTI2025

Direct‐Write Printed Contacts to Layered and 2D Materials

Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and 2D materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS 2 (semiconductor), Bi-2212 (superconductor), and Fe 5 GeTe 2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.

2D materials↗

DOE OSTI2023

Nanopinhole Passivating Contact Si Solar Cells Fabricated with Metal-Assisted Chemical Etching

Monocrystalline Si (c-Si) solar cells with passivating contacts based on doped polycrystalline Si (poly-Si) on ≈2.0 nm silicon oxide (SiO x ) require >1000 °C thermal processing to create conducting pinholes in the SiO x layer. However, this high thermal budget can induce bulk defects in the Czochralski c-Si wafers used as the cell absorber layer. We demonstrate that pinholes can instead be created using metal-assisted chemical etching on planar or textured morphologies, at room temperature. This wet process creates up to 200 nm wide conducting pinholes that are directly observed with transmission electron and atomic force microscopies. High-performance hole-selective poly-Si/SiN y /SiO x and electron-selective poly-Si/SiO x passivating contacts are fabricated and implemented in laboratory-scale solar cells. This process development significantly broadens the range of passivation layer materials, their thicknesses, and surface morphologies, which enables the design of poly-Si contacts with superior passivating quality.

14 SOLAR ENERGY↗

DOE OSTI2019

Back-contacted bottom cells with three terminals: Maximizing power extraction from current-mismatched tandem cells

Multi-junction cells can significantly improve the energy yield of photovoltaic systems over a single-junction cell. The internal interconnection scheme of the subcells is an important aspect in determining the resulting levelized cost of electricity. For a dual-junction cell, two approaches are commonly discussed: series-connected tandem cells with two terminals or independently working subcells in a four-terminal (4T) tandem device. In this paper, we explore the working principle and the operation modes of a third, rarely discussed option: a three-terminal (3T) tandem cell using a back-contacted bottom cell with 3Ts. We use current-voltage measurements of illuminated 3T interdigitated back contact cells and confirm that the front and rear base contacts are at similar quasi-Fermi level positions, which enables the bottom cell to either efficiently collect surplus carriers, in the case of a current-limiting or carrier injecting top cell, or inject majority carriers, in the case of a current-limiting bottom cell. As a result, no current matching is needed. The power output of an idealized 3T bottom cell without resistive effects is independent of the current density applied from the top cell. These characteristics of the 3T bottom cells enable a 3T tandem to operate as efficiently as a 4T tandem, while being compatible with monolithic design and not requiring intermediate grids. We propose a simple equivalent circuit model including additional resistive effects, which describes a real 3T bottom cell and achieves excellent agreement to the experiment. We deduce design guidelines for a 3T bottom cell in different operation regimes.

14 SOLAR ENERGY↗

DOE OSTI2026

Identifying Suitable Front Contacts for High‐Efficiency Cd(Se,Te) Solar Cells on Space‐Qualified Cover Glass

Deployment of photovoltaics in space requires devices that combine high-efficiency, low areal mass, and resilience to harsh environments. Historically, high-efficiency multijunction III–V materials have dominated space power systems; however, their high cost and limited manufacturing throughput motivate the exploration of scalable alternatives. While CdTe-based thin-film photovoltaics offer an attractive option, their performance on non-conventional substrates can suffer from front contact instability under higher-temperature processing. Here, the role of front contact chemistry in limiting cell performance is investigated using CdTe-based devices fabricated on 150 μm thick Ceria-doped space-qualified 0214 Corning glass. A matrix of four transparent conducting oxides (TCOs: CTO, AZO, ITO, IZO) combined with two n-type emitters (MZO, IGO) reveals chemical stability at the front interface—rather than absorber composition alone—governs recombination losses, voltage deficits, and device reproducibility. Chemically stable front contact combinations suppress elemental diffusion and interfacial degradation, resulting in significantly improved carrier lifetimes and junction quality. These insights are validated through record-certified Cd(Se,Te) cell efficiencies of 18.4% under AM1.5G and 16.2% under AM0 illumination on ultra-thin glass. Beyond CdTe, this work provides a general framework for the rational selection of TCO/emitter interfaces in superstrate thin-film photovoltaics, including emerging technologies like metal halide perovskites, while enabling high-efficiency, lightweight photovoltaics for space applications.

14 SOLAR ENERGY↗

DOE OSTI2020

Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

In this work, tunneling aluminum oxide (Al 2 O 3 ) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron-doped surface. Here, these very thin Al 2 O 3 films (1.5-3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110-115 Ω –1 ) hydrophilic surfaces operating as metal-insulator-semiconductor (MIS) contacts. Emitter saturation current density values of approximately ≈57 fA cm 2 are achieved for Al 2 O 3 film thicknesses of 2 nm before metallization. At this same thickness, contact resistivity values of 33 mΩ cm 2 are obtained after metallization. Most importantly, the boron diffusion, wet chemical surface preparation, and spatial ALD of Al 2 O 3 used to create these MIS structures were all performed with industrially relevant equipment on Cz wafers.

14 SOLAR ENERGY↗

DOE OSTI2021

Investigation of Gallium–Boron Spin-On Codoping for poly-Si/SiO x Passivating Contacts

A doping technique for p-type poly-Si/SiOx passivating contacts using a spin-on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iV oc , contact resistivity ..rho..c) are investigated. For all as-annealed samples at different drive-in temperatures, increasing the percentage of Ga in the solution shows a decrement in iV oc (from ~680 to ~610 mV) and increment in ..rho..c (from ~3 to ~800 mO cm 2 ). After a hydrogenation treatment by depositing a SiN x /AlO x stack followed by forming gas annealing, all samples show improved iVoc (~700 mV with Ga-B co-doped, and ~720 mV with all Ga). Interestingly, when co-doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary-ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically-active Ga and B in the poly-Si and Si layers. Overall, these results help understand the different features of the two dopants: a low ρ c with B, a good passivation with Ga, their degree of activation inside the poly-Si and Si layers, and the annealing effects.

14 SOLAR ENERGY↗

DOE OSTI2021

Nonlinear convergence in contact mechanics: Immersed boundary finite volume

In this report we present an immersed boundary finite volume (IBM) method for simulating quasistatic contact mechanics of linearly elastic domains at small strains. In IBM, all external boundaries and internal contacts of an object are represented by embedded surfaces inside a Cartesian mesh, which need not conform to the grid lines. The contact constraints consist of the non-penetrability condition and Coulomb’s friction law, which are discretized using special interpolation stencils and enforced via penalty parameters. The resulting nonlinear system depends on displacement unknowns only. To solve it, we use the Newton method but find that it diverges frequently. To understand the divergence pattern, we analyze a simplified 2-cell problem and show that the global convergence of Newton cannot be ensured for any choice of penalty parameters. We thus propose a modified Newton solver, which guarantees convergence for the 2-cell problem and is numerically verified to converge for all the challenging simulations considered herein. While both 1 st - and 2 nd -order variants of IBM, in displacement unknowns, are proposed, the modified Newton solver applies only to the 1 st -order variant.

42 ENGINEERING↗

DOE OSTI2025

Damage progression and failure of SiC/SiC composite tubes under hard-contact radial expansion

The response of silicon carbide (SiC) fiber-reinforced SiC matrix (SiC/SiC) composite cladding to mechanical interaction with fissile fuel is a knowledge gap that must be overcome to design and assess SiC-based cladding systems for advanced nuclear applications. This study developed the relevant mechanical testing capability and identified the failure behavior and the critical microstructural features and processing defects. Sections of SiC composite tube were subjected to a modified expansion-due-to-compression (EDC) test in an X-ray computed tomography microscope: a polyurethane plug pressed surrogate Al 2 O 3 into the inner walls of the SiC/SiC composite tubes to achieve hard contact. A pure EDC test with just a polyurethane plug was also performed as a reference. Through the use of displacement fields, digital volume correlation revealed inhomogeneous deformation fields in the tubes, even for pure EDC, which was related to the inherent defects in the structure. Deep learning–aided segmentation and systematic data analysis revealed that the presence of inhomogeneous deformation applied by the hard contact was exaggerated by the presence of inner surface imperfections left behind from the matrix densification process. In conclusion, the findings provide insights into the applications, highlighting the necessity for improvements in inner surface roughness and the incorporation of localized contacts in pellet–cladding mechanical interaction computational models.

Composites↗

DOE OSTI2022

Modeling and experimental validation of direct contact crossflow packed beds condenser used in HDH desalination systems

Humidification and dehumidification (HDH) desalination systems are alternatives to reverse osmosis desalination systems, especially for high salinity waters. A HDH system is essentially equipped with a humidifier (also called as evaporator) for air to pick up vapor from saline water, a dehumidifier (also called as condenser) to produce freshwater, and a heating source. HDH systems based on direct contact packed beds heat exchangers have remarkably lower costs than traditional HDH systems due to their inexpensive materials and simple configurations. This paper specifically focuses on direct contact crossflow packed beds condensers, in which cooling water vertically drips through the packed beds, directly contacting the horizontal air-vapor flow. A two-dimensional mathematical model that solves for the enthalpy values of the working fluids is proposed in this paper, and the PDEs are solved using finite differences. To validate the model, an experimental condenser was built and tested. Water temperatures inside the test section at twenty-nine locations were measured, as well as the air vapor temperatures of five locations at the outlet. The measured water and air-vapor temperatures agree with the simulation results with less than 10 % error in most of the compared domain.

42 ENGINEERING↗

DOE OSTI2024

Improving 2D Schottky contacts using an intralayer strategy

An additional insulating layer between the electrode and semiconductor is beneficial to reduce the interfacial coupling and build two-dimensional (2D) Schottky contacts. Here, an intralayer strategy was proposed by using metallic 2D Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) as contacts on 2D semiconductors. Inside a BSCCO monolayer, a conductive layer is sandwiched between insulating layers. Thus, the BSCCO contact has its own insulating layer, which is ultra-thin, single crystalline, and of high quality. This native layer could reduce the metal-induced gap state and thus weaken the interfacial Fermi level pinning effect. Such 2D Schottky diodes thus have barrier heights of 300 mV and a rectification ratio of 104. Furthermore, 2D metal-semiconductor field-effect transistors with BSCCO Schottky gate have a high on-off ratio, low leakage current, and low subthreshold swing value near the theoretical limit. The intralayer structure offers a new approach to improve the 2D Schottky junctions and has prospects in 2D electronics and optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Water contact angles on quartz surfaces under supercritical CO 2 sequestration conditions: Experimental and molecular dynamics simulation studies

The ambiguity of contact angle experimental measurements due to surface chemistry changes resulted from sample contamination and/or the degrees of reaction with supercritical CO 2 has resulted in great difficulties to precisely understand the wetting behavior of CO 2 under the geological carbon sequestration (GCS) conditions. Water contact angles on quartz surface under GCS conditions were investigated through the combined experimental and molecular dynamics simulation (MDS) methods. The experimental results show that water contact angles increases as ionic strength increases. The effects of pressure and temperature are very weak. The dependence of ionic strength, pressure and temperature is same for monovalent and divalent ions solutions. In the MDS, a hydroxylated quartz surface was used as the base point. A good agreement between the MDS and experimental results were obtained. Using the MDS method, a clean mineral surface with a desired surface chemistry can be constructed, which is difficult in experiments. So by comparing MDS and experimental results, the mechanisms of the reservoir wettability can be better understood. Further investigation can be made on quartz surface with different functional groups to better understand wettability alteration caused by contamination and/or CO 2 reaction.

54 ENVIRONMENTAL SCIENCES↗

DOE OSTI2013

Effects of contact resistance on electrical conductivity measurements of SiC-based materials

A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (R c ) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ~973 K. The R c -values behaved similarly for each type of metallic electrode: R c > ~1000 Ω cm 2 at RT, decreasing continuously to ~1–10 Ω cm 2 at 973 K. The temperature dependence of the inverse R c indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ~0.3 eV. Finally, for the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

contact resistance↗

DOE OSTI2021

Nonlinear Interface Reduction for Time-Domain Analysis of Hurty/Craig-Bampton Superelements with Frictional Contact

Virtual prototyping in engineering design relies today on modern numerical models of contacting structures with accurate resolution of interface mechanics, which strongly affect the system-level stiffness and energy dissipation due to frictional losses. High-fidelity modeling within the localized interfaces is required to resolve local quantities of interest that may drive design decisions. The high-resolution finite element meshes necessary to resolve inter-component stresses tend to be computationally expensive, particularly when the analyst is interested in response time histories. The Hurty/Craig-Bampton (HCB) transformation is a widely used method in structural dynamics for reducing the interior portion of a finite element model while having the ability to retain all nonlinear contact degrees of freedom (DOF) in physical coordinates. These models may still require many DOF to adequately resolve the kinematics of the interface, leading to inadequate reduction and computational savings. This study proposes a novel interface reduction method to overcome these challenges by means of system-level characteristic constraint (SCC) modes and properly orthogonal interface modal derivatives (POIMDs) for transient dynamic analyses. Both SCC modes and POIMDs are computed using the reduced HCB mass and stiffness matrices, which can be directly computed from many commercial finite element analysis software. Comparison of time history responses to an impulse-type load in a mechanical beam assembly indicate that the interface-reduced model correlates well with the HCB truth model. Localized features like slip and contact area are well-represented in the time domain when the beam assembly is loaded with a broadband excitation. The proposed method also yields reduced-order models with greater critical timestep lengths for explicit integration schemes.

42 ENGINEERING↗