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Circuit designed for measurement of dc current-versus-voltage characteristics of semiconductor devices. Operates in conjunction with x-y pen plotter or digital storage oscilloscope, which records data. Includes large feedback resistors to prevent high currents damaging device under test. Principal virtues: low cost, simplicity, and compactness. Also used to evaluate diodes and transistors.
On the first mission of the Tethered Satellite System (TSS-1), a 1.8 m diameter spherical satellite will be deployed a distance of 20 km above the Space Shuttle Orbiter on an insulated conducting tether. The satellite will be held at electric potentials up to 5000 volts positive with respect to the ambient plasma. Due to the passage of the conducting tether through the Earth's magnetic field, an electromagnetic field (EMF) will be created, driving electrons down the tether to the Orbiter, out through an electron gun into the ionosphere and back into the positive-biased satellite. The main problem addressed here is the current-voltage characteristics of the ionospheric interaction with the satellite. The first problem is that while the satellite will be capable of measuring charged particle flow to the surface at several locations, the detectors have a limited range of acceptance angle. The second problem is that the angle of incidence of the incoming electrons will have to be relative to the local normal. This will be important in order to predict the magnitude of the detectable current at each detector location so the detector gain can be pre-set to the correct range. The plasma sheath was analyzed mathematically, and subroutines were written to solve relevant finite element, Taylor-Vlasov, and Poisson equations.
Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.
The results of a space flight qualification test program for a low-voltage, quartz tungsten-halogen light are presented. The test program was designed to qualify a halogen light for use in the Pool Boiling Experiment, a Get Away Special (GAS) payload that will be flown in the space shuttle payload bay. Vibration and thermal vacuum tests were performed. The test results indicated that the halogen light will survive the launch and ascent loads, and that the convection-free environment associated with the GAS payload system will not detrimentally affect the operation of the halogen light.
Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.
Two identical SP-HVDE (Space Plasma-High Voltage Drainage Experiment) trays were designed and fabricated and were flown in the NASA LDEF in the LEO environment. The trays were placed with one near the leading edge and one near the trailing edge, and investigation was performed to compare the environmental interactions on the dielectric samples of the two trays. The original objective was successfully achieved by measuring the first in-flight long term average leakage current through 156 coulometers. Less than 5 percent anomalous behavior of the coulometers were found in the post flight analysis.
A study is described of the reverse I-V characteristics of the largest space qualified silicon solar cells currently available (8 x 8 cm) and of reverse bias voltage (RBV) testing performed on these cells. This study includes production grade cells, both with and without cover glass. These cells span the typical output range seen in production. Initial characteristics of these cells are measured at both 28 and 60 C. These measurements show weak correlation between cell output and reverse characteristics. Analysis is presented to determine the proper conditions for RBV stress to simulate shadowing effects on a particular array design. After performing the RBV stress the characteristics of the stressed cells are remeasured. The degradation in cell performance is highly variable which exacerbates cell mismatching over time. The effect of this degradation on array lifetime is also discussed. Generalization of these results to other array configurations is also presented.
A description is given of the reconfigured Photovoltaic Array Space Power (PASP) Plus experiment: its objectives, solar-array complement, and diagnostic sensors. Results from a successful spaceflight will lead to a better understanding of high-voltage and radiation-damage limitations in the operation of new-technology solar arrays.
The problems encountered in the transmission of high-power (kilowatts to megawatts) in extraterrestrial environments are reviewed. A summary of the work at Auburn University in the study of these problems is presented. These studies include high-voltage breakdown in the space environment as influenced by gas contamination and thermal stress, the modeling of lunar transmission lines, particle contamination, and material degradation by the hypervelocity impact of microparticles.
Magnetic reconnection between the IMF and the geomagnetic field is thought to play a major role in the transfer of solar wind momentum and energy to the magnetosphere. Both analytic modeling and analysis of geophysical data have shown that this coupling process should be a sensitive function of the clock angle of the IMF. Results are presented from a three-dimensional, MHD, global numerical simulation code for the reconnection voltage between the closed geomagnetic field and the IMF as a function of the IMF clock angle. These results are consistent with a sin(theta/2) functional behavior.
Solar cells made from gallium arsenide (Gaas), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub oc) of 1.05 V at 1 AM0, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured V sub oc of approximately 950 mV at 1 AM0, 300 K. However, to date, the best measured V sub oc for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AM0, 25 C. The V sub oc of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V sub oc, and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V sub oc of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.
Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.
The paper reports on a detailed experimental investigation of lateral tunneling between electrodes of a two-dimensional electron gas separated by the voltage-controlled barrier of a nanometer Schottky gate. The experimental data are modeled using the WKB method to calculate the tunneling probability of electrons through a barrier whose shape is determined from a solution of the two-dimensional Poisson equation. This model is in excellent agreement with the experimental data over a two order of magnitude range of current.
The transient conductivity of high-resistivity Bridgman-grown Cr-doped GaAs under pulsed monochromatic light is monitored using transverse acoustoelectric voltage (TAV) at 83 K. Keeping the photon flux constant, the height and transient time constant at the TAV are used to calculate the energy dependence of the trap density and its cross section, respectively. Two prominent trap profiles with peak trap densities of approximately 10 to the 17th/cu cm eV near the valence and the conduction bands are detected. These traps have very small capture cross sections in the range of 10 to the -23 to 10 to the -21st cm sq. A phenomenon similar to the persistent photoconductivity with transient time constants in excess of a few seconds in high-resistivity GaAs at T = 83 K is also detected using this technique. These long relaxation times are readily explained by the spatial separation of the photo-excited electron-hole pairs and the small capture cross section and large density of trap distribution near the conduction band.
Electrically isolated switching circuit supplies pulses at potentials up to 6.5 kV and currents up to 6.5 A, lasting as long as few microseconds. Turn-on time about 40 ns; turn-off time about 3 microseconds. Electrically isolated from control circuitry by means of fiber-optic signal coupling and isolated power supply. Electrical isolation protects both technician and equipment. This and similar circuits useful in such industrial and scientific applications as high-voltage, high-frequency test equipment; electrostatic-discharge test equipment; plasma-laboratory instrumentation; spark chambers; and electromagnetic-interference test equipment.
The Space Plasma-High Voltage Drainage Experiment (SP-HVDE) provided a unique opportunity to study long term space environmental effects on materials because it was comprised of two identical experimental trays; one tray located on the ram facing side (D-10), and the other on the wake facing side (B-4) of the LDEF. This configuration allows for the comparison of identical materials exposed to two distinctly different environments. The purpose of this work is to document an assessment of the effects of five and three quarters years of low Earth orbital space exposure on materials comprising the SP-HVDE (experiment no. A0054). The findings of the materials investigation reported focus on atomic oxygen effects, micrometeor and debris impact site documentation, thermal property measurements, and environmentally induced contamination.
TRW designed and fabricated two identical SP-HVDE trays which were flown in the NASA LDEF (Long Duration Exposure Facility) for 5.75 years in the LEO (low earth orbit) environment. One tray was placed near the leading edge and one near the trailing edge, and investigations were performed to compare the environmental interactions on the dielectric samples of the two trays. Each tray consisted of six assemblies with Kapton dielectric samples of varying thicknesses (i.e., 2 mils, 3 mil, and 5 mils) biased under +/- 300 V, +/- 500 V, and +/- 1000 V. The original objective was successfully achieved by measuring the first in-flight average leakage current through the samples. Less than 5 percent of the post-flight coulometers behaved anomalously. The data should be valuable to the design and evaluation of spacecraft with high voltage systems. M/D (micrometeoroid and debris) impacts over the dielectric samples were examined using a SEM (Scanning Electron Microscope) and an EDS (Energy Dispersive x-ray Spectrometer). These impact sites were sprayed by silver which were most likely caused either by the impact or a 'local ESD' (electrostatic discharge).
The basic physics involving the interaction of a high voltage sphere with a LEO-Plasma was investigated via computer experiments. Two approaches were used: the fluid description and the more general particle pushing method. Both techniques displayed qualitatively similar features. Thus, the initial time-dependent response of the plasma predicted by the fluid model, including the initial current surge and sheath formation, the formation of ion and electron density shells about the sphere with a double layer potential structure, and the subsequent propagation of the density shells away from the sphere. The PIC results also displayed an oscillatory character and slightly different time constants for the growth and decay mechanisms involved.