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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage V for is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in quantum wells has proven to be an important factor reducing V for . However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-shaped defects (V-defects) have been proposed as another key factor in reducing V for to allow lateral injection into multiple quantum wells, thus bypassing the multiple energy barriers incurred by vertical transport. In this paper, to model carrier transport in the whole LED, we consider both random-alloy and V-defect effects. A fully two-dimensional drift-diffusion charge-control solver is used to model both effects. The results indicate that the turn-on voltages for blue and green LEDs are both affected by random alloy fluctuations and the V-defect density. For green LEDs, V for decreases more due to V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection. Then, we discuss how the V-defect density and size affects the results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Size Effect of Local Current-Voltage Characteristics of MX 2 Nanoflakes: Local Density of States Reconstruction from Scanning Tunneling Microscopy Experiments

Local current-voltage characteristics for low-dimensional transition-metal dichalcogenides (LDTMD), as well as the reconstruction of their local density of states (LDOS) from scanning tunneling microscopy (STM) experiments, are of fundamental interest and can be useful for advanced applications. Most of the existing models either have limited applicability for complex-shaped LDTMDs (e.g., those based on the Simmons approach) or require solving of an ill-defined integral equation to deconvolute the unknown LDOS (e.g., those based on the Tersoff approach). Using a serial expansion of the Tersoff formulas, we propose a flexible method to reconstruct the LDOS from local current-voltage characteristics measured in STM experiments. We establish a set of key physical parameters, which characterize the tunneling current of a STM-probe–sample contact and the sample LDOS expanded in Gaussian functions. Using a direct variational method coupled with probabilistic analysis, we determine these parameters from the STM experiments for MoS2 nanoflakes with different numbers of layers. The main result is the reconstruction of the LDOS in a relatively wide energy range around the Fermi level, which allows us to gain insight into the local band structure of LDTMDs. The reconstructed LDOS reveal pronounced size effects for the single-layer, two-layer, and three-layer MoS 2 nanoflakes, which we relate to the low dimensionality and strong bending or corrugation of the nanoflakes. We hope that the proposed elaboration of the Tersoff approach, allowing LDOS reconstruction, will be of critical interest for the quantitative description of STM experiments and also of use to better understand the microscopic physical aspects of the surface, strain, and bending contributions to the LDTMDs’ electronic properties.

42 ENGINEERING↗
DOE OSTI2025

Comprehensive model for evaluating voltage losses and performance improvements in thin-film photovoltaic devices

Progress of state-of-the-art and next-generation thin-film photovoltaic devices is often stymied by open-circuit voltage (𝑉 oc ) that is significantly lower than theoretical and practical limits. Yet, effectively diagnosing the primary sources of voltage loss remains challenging. Herein, a sequence of device-level characterization techniques and simulations are employed to identify and rank loss mechanisms. For the research-based Cd⁡(Se,Te) device under study, most of the loss was at the front semiconductor heterointerface due to a clifflike conduction-band offset that lowered the recombination activation energy. Additional losses due to band tails were quantified by photoluminescence analysis. The latter provided the absorption coefficient and activation energy reduction associated with band tails as inputs to device models. Simulations showed that alleviating front-interface issues would improve 𝑉 oc , but it would then be limited by bulk recombination. Further improvement of the bulk would then lead to back-contact limitations. Reducing band tails is beneficial in any circumstance. In conclusion, this analysis provides guidance for reaching toward the radiative 𝑉 oc limit.

14 SOLAR ENERGY↗
DOE OSTI2022

Origin of transverse voltages generated by thermal gradients and electric fields in ferrimagnetic-insulator/heavy-metal bilayers

We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm 3 Fe 5 O 12 /W and Tm 3 Fe 5 O 12 /Pt) to corresponding electrically driven transverse resistances at and above room temperature. We find for Tm 3 Fe 5 O 12 /W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm 3 Fe 5 O 12 /Pt the ratio of the electrically driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient signals, a result which is very different from expectations for a SMR-based mechanism alone. Here, we ascribe this difference to a proximity-induced magnetic layer at the Tm 3 Fe 5 O 12 /Pt interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Voltage-controlled magnetic anisotropy enabled by resistive switching

The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present an approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase transition producing a volatile resistive switching. The switching occurs in a characteristic spatial pattern, the formation of an insulating barrier perpendicular to the current flow, which results in an unusual ferromagnetic/paramagnetic/ferromagnetic configuration. Further, the formation of this voltage-driven paramagnetic insulating barrier is accompanied by the emergence of a strong uniaxial magnetic anisotropy that overpowers the intrinsic material anisotropy. Our results demonstrate that resistive switching is an effective tool for manipulating magnetic properties. Because resistive switching can be induced in a broad range of materials, our findings could enable a new class of voltage-controlled magnetism systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Circulating Current Reduction of Back-to-Back MMC with Advanced Grid-Support Functionalities for Medium-Voltage Applications

A Lyapunov energy function based circulating current reduction scheme for a back to back modular multilevel converter based system for a microgrid application has been proposed in this digest. In order to ensure no circulating or zero sequence currents within the modules, the dynamics from one leg of the converter to the other are evaluated. A Lyapunov energy function is then developed and utilizing the circulating current dynamics of the converter the overall control law is implemented. In this digest a decentralized hierarchical control architecture has been implemented for the main current control; where the outer loop or the central controller implements the higher level grid interconnection functions as per IEEE 1547-2018 standards and the inner loop based on synchronous reference frame implements the current control architecture. The inner loops' outputs are the commanded converter voltages either on either side which are augmented by the Lyapunov energy function based circulating current suppression architecture. To evaluate the efficacy of the overall system, the overall system is modeled around a 300kVA back to back SiC multilevel modular converter used as a direct-connected medium voltage (MV) grid intertie based on MATLAB/Simulink domain. Several important case studies are presented in this paper to prove the effectiveness of the proposed architecture. case study results are presented.

circulating current↗
DOE OSTI2026

A Machine Learning based Approach of Estimating Equivalent Circuit Model Parameters at Different SoCs of Li-ion Batteries from Voltage Relaxation

Abstract: In this study, an approach of estimating the equivalent circuit model (ECM) parameters for Li-ion batteries (LIBs) is proposed based on the voltage value at different intervals while relaxing the LIB after discharge. The typical approach for estimating ECM parameters of a LIB is to conduct electrochemical impedance spectroscopy (EIS) measurements at different frequencies and fit them to a predefined circuit model, which requires additional measuring arrangements and specialized devices. The proposed methodology utilizes four different voltages at 0s, 60s, 360s, and 1800s alongside the specific state of charge (SoC) value for a specific constant discharge current value of ~1C until the relaxation stage to train and evaluate three regression-based machine learning models— Support Vector Regression (SVR), Extreme Gradient Boosting (XGBoost), and Gaussian Process Regression (GPR)—for estimating the ECM parameters of the selected model. Bayesian optimization is employed for hyperparameter tuning to achieve optimal performance for all the regressor models, among which, the GPR provided the best performance with the root-mean-squared error (RMSE) of less than 4x10-4 on average for the resistive components and less than 0.27 for capacitive components with excellent R2 scores. The simplicity of the approach enables it to eliminate the need for sophisticated measuring equipment and computation power.

Sagar, Md. Samiul [The University of Alabama (UA)]↗
DOE OSTI2022

Temperature Dependence of FDR Response for Thermally Aged Low-Voltage Cables

Frequency Domain Reflectometry (FDR) has attracted significant attention for use in nuclear power plants (NPPs) for non-destructive cable health monitoring. However, cable aging detection using FDR faces challenges due to its high sensitivity to environmental factors such as temperature, vibrations, proximity to other cables, and so on. This work aims to evaluate the influence of measurement temperature on the FDR reflected signal in a low voltage cable undergoing accelerated thermal aging. A 100 ft long multi-core low-voltage unshielded power cable insulated with flame retardant ethylene propylene rubber (FR-EPR) and covered by a chloro-polyethylene (CPE) jacket was selected for this study. The cable was energized during aging by a 480 VAC 3-phase motor, and a 30 ft mid-section of this cable was routed through an air circulating oven held at 140 °C for up to an effective aging time of 62 days. FDR measurements were taken periodically with the oven on (at 140 °C) and with the oven off (at 22 °C). A comparative analysis of data collected at both temperatures showed that the FDR response was strongly dependent on measurement temperature. FDR measurements at ambient temperature showed large peaks corresponding to impedance changes in the aged section of the cable after 3 days of aging. These peaks continued to rise steadily with increasing aging time. However, for measurements taken at 140 °C, slowly rising peaks in the oven region (aged section) were observed only after a lead time of 23 days of aging. This work highlights the importance of measurement temperature on the performance of FDR as a condition monitoring tool for aging cables.

Sriraman, Aishwarya↗
DOE OSTI2023

Suppression of Parasitic Voltage Oscillation in Power Modules by Turn-Off Current Zero Placement

This paper presents a frequency-domain analysis of the turn-off equivalent switching network of a hard-switched semiconductor switching cell. This paper also proposes a novel method to suppress parasitic voltage ringing by placing the turn-off current zero at the parasitic resonant frequency. The turn-off current was decomposed into ramp functions and a constant-valued function to facilitate obtaining the frequency components of the turn-off current using the Laplace transform of standard signals. The proposed frequency-domain modeling of the parasitic voltage ringing and the suppression were validated by detailed circuit simulation using parameters corresponding to prior literature with experimental validation.

Galigekere, Veda Prakash↗
DOE OSTI2022

A Fairness-based Distributed Energy Coordination for Voltage Regulation in Distribution Systems

The rapid adoption of photovoltaic (PV) systems combined with falling prices of energy storage is paving the way for a future in which customers could locally supply their energy needs and export surplus power to the grid. However, reverse power flow from multiple sites in a network can cause overvoltage that decreases system reliability and the utilization level of PV system. In this paper, we present a two-stage approach to solve the energy coordination problem in distribution networks. In the first stage, a household with PV and energy storage is optimized to allow customers to adopt different control strategies such as load following and tariff arbitrage. We show that such customer-led control strategies can cause reverse power flows during peak PV generation periods, thus resulting in overvoltage. In such cases, the second stage of the proposed approach is called upon to solve a fairness-based energy coordination problem that can maintain voltages within limits while maximizing the PV generation while fairly distributing the actions among all the PV systems. As a result, each of the resources in the network has equal opportunity to export power and shares the responsibility of voltage regulation. Simulation studies have been carried out on the IEEE 13-bus test feeder to verify the effectiveness of the proposed approach.

Distributed energy resources, fairness, overvoltag↗
DOE OSTI2026

Digital Twin-Enabled Adaptive Control for Hydroelectric Systems: Turbine Governor and Voltage Regulation

This paper presents a comprehensive digital twin (DT) framework for hydroelectric systems that enables adaptive control of turbine governors and excitation systems without requiring detailed manufacturer specifications. The proposed framework integrates neural network-based system identification with stabilizing adaptive control laws for the installed turbine controller and middle-branch adaptive tuning for the installed voltage regulator. Using real operational data from Unit C-8 at Rocky Reach Dam (1,349 MW capacity), highfidelity neural network models are developed to capture turbine and generator dynamics without requiring detailed manufacturer specifications. The DT enables safe controller synthesis and validation in simulation before deployment. For turbine control, the proposed method achieves a 79.9% mean square error (MSE) reduction compared with that of an optimal controller. For voltage regulation, the adaptive excitation controller achieves approximately 42.6% MSE reduction while preserving installed protection logic. The results demonstrate that DT technology provides a practical pathway for modernizing hydropower control systems with minimal operational disruption.

Gui, Yonghao [ORNL] (ORCID:0000000250435534)↗
DOE OSTI2024

Study on Conversion from an Existing Alternating Current Medium-Voltage Line to a Direct Current Line: A Case of Load or Source Expansion

Simultaneous increase of power generation through renewable systems and load due owing to the rapid growth in electrified road transportation systems, leads to new challenges in the design, operation, and protection of distribution-level electrical power systems. This paper addresses challenges related to the integration of new sources or loads to a distribution grid through long alternating current lines. The International Council on Large Electric Systems medium-voltage benchmark model developed for North America was used for simulation studies. Use cases were developed to illuminate the issues related to long alternating current lines and the usefulness of medium-voltage direct current lines in a distribution network.

Jaldanki, Sreenivasa↗
DOE OSTI2022

Voltage and Current Response Characteristics of PMU Device by PCI Simulation

Phasor Measurement Units (PMUs) are critical for the Wide Area Measurement System (WAMS), especially for real-time grid monitoring, disturbance location, and situation awareness. Once they are damaged, the stable operation of power system will be affected directly and greatly. As new electronic devices in power system, their immunity to electromagnetic pulse (EMP) events needs to be studied. In this paper, an effective impedance measurement scheme is proposed for port impedance measurement of PMU. A non-uniform transmission line model is established to eliminate the impact of fixture in the de-embedding process. Then circuit of pulse current generator is established to generate damping sinusoid and double exponential wave applied to the port. Finally, by using measured impedance as load of the generator, the voltage and current responses of different ports are calculated in the pulsed current injection (PCI) simulation. Results shows the characteristics of port impedance, voltage and current waveforms. The relation between port impedance and the waveforms is discussed.

Zhang, Liang↗
DOE OSTI2025

Operation and Control of Electric Vehicle Charger with Enhanced Dynamic Performance Under Non-Ideal Grid Voltage Condition

This paper presents a three-phase electric vehicle charger connected to the grid, featuring multiple boost converters on the DC side, specifically designed to ensure smooth, oscillation-free power transfer during unsymmetrical voltage sags. Precise control mechanisms are implemented on the boost converter side to regulate both voltage and current on the electric vehicle side, thereby maintaining optimal charging conditions. The control architecture for both the grid-connected and boost converter components is based on the Lyapunov energy function, which is employed to achieve superior dynamic performance and stability. The system's robustness and reliability are demonstrated through its ability to maintain stable operation and efficient power transfer despite fluctuations in grid conditions. Furthermore, the implementation of Lyapunov-based control ensures rapid response and minimal energy loss, enhancing the overall efficiency of the system. To validate the effectiveness of this approach, a comprehensive model of the system was developed and tested using MATLAB/Simulink, with detailed computer simulations conducted across various significant case studies.

DC-DC boost converter↗
DOE OSTI2022

DERMS Online: A New Voltage Sensitivity-Enabled Feedback Optimization Framework

This paper proposes a distributed energy resource management system (DERMS) solution by developing a new voltage sensitivity-enabled feedback optimization framework. The key idea is to adopt a measurement feedback scheme to reformulate the original nonlinear optimization into a linear programming (LP) problem via perturb-and-observe-based voltage sensitivity analysis. The proposed solution eliminates the dependence on load knowledge and can be implemented online thanks to an efficient open-source solver for LP problems. Comparison results with other control methods on a real distribution feeder in Southern California highlight the feasibility as well as benefits for the proposed framework.

distributed energy resource management↗
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗
DOE OSTI2021

Reliability Analysis of Large-Area, Low Pressure-Assisted Silver Sintering for Medium-Voltage Power Modules

Multi-layer insulating ceramic substrates can enable medium-voltage (MV) power modules with reduced peak electric field. This benefit is particularly important for MV silicon carbide (SiC) MOSFETs due to their higher operating voltages. Large-area, low-pressure assisted silver sintering is a potential solution for bonding substrates to create a multi-layer structure. The voiding content and defect density of the bond used to create the multi-layer substrate stack-up is critical to the reliability of the power module and the thermal performance, as this bond is in the primary path for heat dissipation in the power module structure. Here, samples of two-layer direct bonded aluminum (DBA) stacks have been fabricated and subjected to thermal cycling to analyze their reliability. Passive thermal cycling from -40 degrees C to 200 degrees C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1000 thermal cycles, adhesive failures are observed between the sintered silver and the DBA surface. Cross-sections were cut and imaged via optical microscope and SEM. Thermal analyzer measurements are recorded on a 10-kV SiC power module utilizing the sintered DBA substrate stacks.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Precursor Reaction Method With High Ga Cu(In,Ga)(S,Se)$_{2}$ to Achieve Increased Open-Circuit Voltage

The precursor reaction process for the fabrication of Cu(In,Ga)Se 2 solar cells potentially allows for low-cost fabrication and scalable processing for manufacturing. Additionally, this process has yielded record efficiencies in lab-scale experiments. Thus far, research on the precursor reaction method has been restricted to relatively low Ga compositions with Ga/(In+Ga) ≈ 25%. By increasing the ratio of Ga, it is possible to increase the bandgap, and thus, increase the open-circuit voltage. This work develops and characterizes the precursor reaction process for use with Ga/(In+Ga) ≈ 50%, with the goal of improving the open-circuit voltage and efficiency. It is shown that with an increased Ga ratio, increased V ∞ is achieved, but the rate of conversion from the precursor to absorber phases is decreased. Additionally, increased Ga improves the film adhesion at increased selenization temperatures as well as improving the film morphology.

14 SOLAR ENERGY↗