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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Near-edge study of gold-substituted YBa2Cu3O(7-delta)

The valence of Cu and Au in YBa2Au0.3Cu2.7O7-delta was investigated using X-ray absorption near edge structure (XANES). X-ray and neutron diffraction studies indicate that Au goes on the Cu(1) site and Cu K-edge XANES shows that this has little effect on the oxidation state of the remaining copper. The Au L3 edge develops a white line feature whose position lies between that of trivalent gold oxide and monovalent potassium gold cyanide, and whose height relative to the edge step is smaller than in the two reference compounds. The appearance of the Au L3 edge suggests that fewer Au 3d states are involved in forming the Au-O bond in YBa2Au0.3Cu2.7O7-delta than in trivalent gold oxide.

Ruckman, Mark W.↗
DOE OSTI2025

A High-Efficiency Delayed Update Algorithm for Evaluating Slater Determinants in Quantum Monte Carlo

For quantum Monte Carlo simulations of molecular systems or supercells with thousands of electrons, matrix operations related to Slater determinants lead the computational cost. McDaniel et al. [J. Chem. Phys. 2017, 147, 174107] proposed a delayed update algorithm to increase computational efficiency by using matrix–matrix multiplication when updating the inverse matrices of Slater determinants. However, preparing intermediate matrices for applying the Sherman–Morrison–Woodbury formula remained a bottleneck. Here, in this work, we introduce an improved algorithm for CPUs and GPUs that (1) reduces this bottleneck by iteratively updating the intermediate matrices and (2) is efficient at any acceptance ratio, with no cost for rejected moves on CPUs and minimal cost on GPUs. We show the full scheme of integrating the delayed update algorithm into a single-electron move. The high efficiency of our algorithm is demonstrated on CPUs and GPUs for a 512 atom/6144 valence electron calculation, with 12× and 2× overall speed-up compared to traditional rank-1 update schemes in diffusion quantum Monte Carlo, respectively.

Luo, Ye [Argonne National Laboratory (ANL), Argonn↗
DOE OSTI2025

Robust supermoiré pattern in large-angle single-twist bilayers

Forming long-wavelength moiré superlattices in van der Waals bilayers that have a small-angle twist between the two layers has been a key approach for creating moiré flat bands. However, for small twist angles, strong lattice reconstruction creates domain walls and other forms of disorder in the moiré pattern, posing considerable challenges for engineering such platforms. At large twist angles, the lattices are more rigid, but it is difficult to produce flat bands in shorter-wavelength moiré superlattices. Here, in this study, we introduce an approach for tailoring robust supermoiré structures in bilayers of transition-metal dichalcogenides using only a single twist near a commensurate angle. Structurally, we show the spontaneous formation of a periodic arrangement of three inequivalent commensurate moiré stackings, where the angle deviation from the commensurate angle determines the periodicity. Electronically, we reveal a large set of van Hove singularities that indicate strong band hybridization, leading to flat bands near the valence band maximum. Our study extends the study of the interplay among band topology, quantum geometry and moiré superconductivity to the large twist angle regime.

electronic properties and materials↗
DOE OSTI2024

Complex fermiology and electronic structure of antiferromagnet EuSnP

Throughout this work, we studied the electronic structure of a layered antiferromagnetic metal, EuSnP, in the paramagnetic and in the antiferromagnetic phase using angle-resolved photoemission spectroscopy (ARPES) alongside density-functional theory (DFT)-based first-principles calculations. The temperature dependence of the magnetic susceptibility measurements exhibits an antiferromagnetic transition at a Néel temperature of 21 K. Employing high-resolution ARPES, the valence-band structure was measured at several temperatures above and below the Néel temperature, which produced identical spectra independent of temperature. Through analysis of the ARPES results presented here, we attribute the temperature-independent spectra to the weak coupling of the Sn and P conduction electrons with Eu 4⁢ƒ states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Bandgap Engineering of Ga 2 O 3 by MOCVD Through Alloying with Indium

Ga 2 O 3 and In 2 O 3 are vital semiconductors with current and future electronic device applications. Here, we study the alloying of In 2 O 3 and Ga 2 O 3 (IGO) and the associated changes in structure, morphology, band gap, and electrical transport properties. Undoped films of IGO were deposited on sapphire substrates with varying indium (In) percentage from zero to 100% by metal-organic chemical vapor deposition (MOCVD). Some films were annealed in H 2 to induce electrical conductivity. The measurements showed the optical band gap decreased by adding In; this was confirmed by density functional (DFT) calculations, which revealed that the nature of the valence band maximum and conduction band minimum strongly relate to the chemistry and that the band gap drops by adding In. The as-grown films were highly resistive except for pure In 2 O 3 , which possesses p-type conductivity, likely arising from In vacancy-related acceptor states. N-type conductivity was induced in all films after H-anneal. DFT calculations revealed that the presence of In decreases the electron effective mass, which is consistent with the electrical transport measurements that showed higher electron mobility for higher In percentage. The work revealed the successful band gap engineering of IGO and the modification of its band structure while maintaining high-quality films by MOCVD.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Photoabsorption by ground-state alkali-metal atoms.

Principal-series oscillator strengths and ground-state photoionization cross sections are computed for sodium, potassium, rubidium, and cesium. The degree of polarization of the photoelectrons is also predicted for each atom. The core-polarization correction to the dipole transition moment is included in all of the calculations, and the spin-orbit perturbation of valence-p-electron orbitals is included in the calculations of the Rb and Cs oscillator strengths and of all the photoionization cross sections. The results are compared with recent measurements.

Weisheit, J. C.↗
DOE OSTI2025

The Electronic Structure of Zirconium and Hafnium Monochalcogenides

High-level ab initio CCSD(T) and spin–orbit icMRCI+Q calculations were used to predict potential energy curves (PECs) for the lowest-lying states of ZrO, ZrS, HfO, and HfS. The prediction of the ground state is basis set dependent at the icMRCI+Q level for ZrO and ZrS due to the small singlet–triplet splitting between the lowest 1 Σ + and 3 Δ states. CCSD(T) with a spin orbit correction predicted the 1 Σ + ground state in agreement with experiment. New all-electron basis sets were developed for Hf to improve the results over those predicted by use of effective core potentials (ECPs) that subsume the 4f electrons into the definition of the core. The use of the new DK-4f basis sets rather than ECPs became more important for HfO and HfS where there is a lack of a good core–valence separation. icMRCI+Q, CCSD(T), and DFT calculations for the spectroscopic parameters of ZrO, ZrS, HfO, and HfS were benchmarked with available experimental data. Bond dissociation energies (BDEs) of these four systems were calculated at the Feller–Peterson–Dixon (FPD) level to be 762.1 (ZrO), 543.5 (ZrS), 803.8 (HfO), and 575.1 kJ/mol (HfS), in excellent agreement with experiment. The HfS BDE was remeasured using the R3PI method, providing an updated experimental measurement of D 0 (HfS) = 5.978 ± 0.002 eV = 576.8 ± 0.2 kJ/mol. This experimental value, combined with experimental measurements of the ionization energies of Hf and HfS, gives the cationic BDE of D 0 (Hf + -S) = 5.124 ± 0.002 eV = 494.4 ± 0.2 kJ/mol.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Quantification of Shallow Defect Suppression in Aminosilane-Passivated Lead Halide Perovskites via Optical and Electrochemical Methods

We combine fluence-dependent photoluminescence (PL) and electrochemical characterization to estimate defect-dependent trapping rates, energetic distributions, and densities of defects, in lead halide perovskite films Cs 0.1 FA 0.9 PbI 3 and Cs 0.17 FA 0.83 Pb­(I 0.75 Br 0.25 ) 3 , before and after trap passivation with vapor-deposited (3-aminopropyl)­trimethoxysilane (APTMS). For both compositions, the PL studies show that energetically shallow subgap near-valence defect densities lead to bimolecular nonradiative recombination which is reduced by 92% after APTMS treatment. Electrochemical characterization of these same active layers shows for the first time that APTMS passivation impacts mainly on near-valence (mobile anionic) defects that decrease in density by 4 orders of magnitude, from 10 18 cm –3 to 10 14 cm –3 , as a result of silane modification. Here, the combination of PL and electrochemical characterization promises a unique approach to speciation and quantification of a broader distribution of trap states in perovskites and provides straightforward assessments of the efficacy of defect mitigation strategies.

Defects↗
DOE OSTI2023

X-ray induced electron and ion fragmentation dynamics in IBr

Characterization of the inner-shell decay processes in molecules containing heavy elements is key to understanding x-ray damage of molecules and materials and for medical applications with Auger-electron-emitting radionuclides. The 1s hole states of heavy atoms can be produced by absorption of tunable x rays and the resulting vacancy decays characterized by recording emitted photons, electrons, and ions. The 1s hole states in heavy elements have large x-ray fluorescence yields that transfer the hole to intermediate electron shells that then decay by sequential Auger-electron transitions that increase the ion’s charge state until the final state is reached. In molecules, the charge is spread across the atomic sites, resulting in dissociation to energetic atomic ions. We have used x-ray/ion coincidence spectroscopy to measure charge states and energies of Iq+ and Brq′+ atomic ions following 1s ionization at the I and Br K-edges of IBr. We present the charge states and kinetic energies of the two correlated fragment ions associated with core-excited states produced during the various steps of the cascades. Here, to understand the dynamics leading to the ion data, we develop a computational model that combines Monte-Carlo/Molecular-Dynamics (MC/MD) simulations with a classical over-the-barrier model to track inner-shell cascades and redistribution of electrons in valence orbitals and nuclear motion of fragments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Microscopic optical potentials from a Green's function approach

Optical potentials are a standard tool in the study of nuclear reactions, as they describe the interaction between a target nucleus and a projectile. The use of phenomenological optical potentials built using experimental data on stable isotopes is widespread. Although successful in their dedicated domain, it is unclear whether these phenomenological potentials can provide reliable predictions for unstable isotopes. To address this problem, optical potentials based on microscopic nuclear structure input calculations prove to be crucial and are an important current line of research. In this work we present an explicit implementation of the Feshbach formalism for the systematic derivation of optical potentials using input from nuclear structure models. Numerical tools for the derivation of Green's functions associated with nonlocal potentials are presented. In conclusion, the new optical potential, based on the valence shell model, is applied to the calculations of 𝑛 + 24 Mg elastic scattering and yields a close agreement with the experimental data.

Direct reactions↗
DOE OSTI2023

Theory and Simulation of Ultrafast Multidimensional Nonlinear X-ray Spectroscopy of Molecules (Final Report)

Emerging X-ray free electron laser (XFEL) beam sources offer new types of probes of matter with unprecedented spatial and temporal resolutions. These experimental advances must be met by robust theoretical and computational tools that provide predictive modeling capacity of the underlining electronic and structural dynamics. The latter will be essential for the design of sophisticated multi-pulse experiments and for their interpretation. The proposed research effort will focus on developing cutting- edge simulation tools for nonlinear multidimensional X-ray/optical spectroscopies and aims to address key questions in Priority Research Opportunities 1 (Probing and controlling electron motion within a molecule) and 3 (Capturing rare events and intermediate states in the transformation of matter) as mentioned in the BES Roundtable Report “Opportunities for Basic Research at the Frontiers of XFEL Ultrafast Science”. XFEL multidimensional nonlinear techniques, which combine sequences of X-ray and possibly optical pulses, provide a unique experimental toolbox for probing the dynamics of core and valence electronic excitations, as well as material structure. Predictive modeling of these dynamical processes requires the combination of analytical theory for nonlinear interactions of light and matter, robust quantum-chemical methodologies for the accurate description of electronic structure of various materials, and multiscale ab initio electron and nuclear dynamics techniques operating beyond Born-Oppenheimer approximation. These challenges will be addressed with three research thrusts (i) Develop and implement theoretical apparatus for modeling a broad range of multidimensional spectroscopic techniques enabled by present and upcoming XFEL facilities. This thrust also includes the incorporation of a computational module in the DOE supported open-source NWChem computational chemistry package as well as the development of other open-source codes ready for dissemination across a broad user base; (ii) Propose and design new multi-pulse experiments that make use of the capabilities of the incoming LCLS-II facility; (iii) Perform selected applications to specific molecular systems that can be carried out at LCLS-II and demonstrate how these X-ray sources may be used to study nonadiabatic dynamics through conical interactions, electronic correlations in multi-core excitons, and charge transfer/energy transfer processes. The proposed research will be carried out by a multi-disciplinary four-institution research team which combines academia and national laboratories and spans the broad and necessary expertise in theoretical spectroscopy, nonlinear optics, quantum chemistry, molecular non-adiabatic dynamics and code development. The work will be performed in a highly interactive team environment with junior researchers shared between institutions thus cementing cross- disciplinary interactions. The developed simulation tools will be immediately deployed for XFEL facility users, both experimentalists and theorists, via freely distributed codes and databases. Altogether, this project will facilitate establishing XFEL-based multidimensional spectroscopies as a novel diagnostic tool for monitoring electronic and structural dynamics in molecular materials.

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS1977

Surface photovoltage in exciton absorption range in CdS

The high resolution, intrinsic spectra of surface photovoltage are reported for semiconducting n-type CdS single crystals. At reduced temperatures (120-160 K) the spectra exhibit three sharp maxima due to A, B and C free exciton transitions. Energy positions of these lines and valence band parameters (spin-orbit and crystal field splittings) estimated from surface photovoltage are in good agreement with values obtained by other methods. The excitonic transitions are very sensitive to surface treatment, i.e. polishing, etching, background illumination and surface doping. The mechanism of direct interaction of free excitons with surface states is proposed to explain exciton lines in surface photovoltage.

Morawski, A.↗
NASA NTRS1983

Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

Kashkarov, P. K.↗
DOE OSTI2021

Experimental determination of the valence band offsets of ZnGeN 2 and (ZnGe) 0.94 Ga 0.12 N 2 with GaN

A predicted type-II staggered band alignment with an approximately 1.4 eV valence band offset at the ZnGeN 2 /GaN heterointerface has inspired novel band-engineered III-N/ZnGeN 2 heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown (ZnGe) 1- x Ga 2 x N 2 , for x = 0 and 0.06, and GaN using x-ray photoemission spectroscopy. The valence band of ZnGeN 2 was found to lie 1.45–1.65 eV above that of GaN. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For (ZnGe) 0.94 Ga 0.12 N 2 the value was determined to be 1.29 eV, ~10%–20% lower than that of ZnGeN 2 . The experimental determination of the large band offset between ZnGeN 2 and GaN provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.

Physics↗
NASA NTRS1993

Reaction of YBa2Cu3O(7-beta) with Gold, Silver, Bismuth and Lead: Substitution Chemistry and Composite Fabrication

The reaction of YBa2Cu3O(7-beta) with Au, Ag, Bi, and Ph ions or metal is described. Three types of materials were produced: a well-defined series of homogeneous superconductors was obtained for Au ion substitution with little effect on T(sub c); attempted Ag and Bi ion substitution resulted in multi-phase samples with slightly enhanced T(sub c); finally, attempts to produce superconducting metal/superconducting ceramic composites with Pb and Bi powders resulted in multi-phase samples with drastically diminished superconducting properties. For Au- substituted superconductors, YBa2(Cu(l-x)Au(x))3O(7-beta), a substitution series (x = 0 - 0.1) has been synthesized. For x = 0.1 there was no change in the a and b lattice parameters (a = 3.826 A and b = 3.889 A) but a 0.06 A c axis expansion to 11.75 A was observed. The valence of Cu and Au in YBa2Au(0.3)Cu(2.7)O(7-beta) was investigated using X-ray Absorption Near-Edge Structure (XANES). X-ray studies indicate that Au goes into the Cu(l) site and Cu K edge XANES shows that this has little effect on the oxidation state of the remaining copper. A small effect on T(sub c) is observed (T(sub c) = 89 K for x = 0.10). Ag and Bi addition results in a rise in T(sub c) and a decrease in (delta)T(sub c) at low levels (x = 0.10 Ag, T(sub c) = 94 K and (delta)T(sub c) = 0.5 K; x = 0.02 Bi, T(sub c) = 94 K and (delta)T(sub c) = 1K) relative to typical values for YBa2Cu3O(7-beta) (T(sub c) = 91 K, (delta)T(sub c) = 2 K). Attempts at fabrication of Pb- and Pb(1-x)Bi(x)-superconductor composites are described. Cold pressing followed by low temperature (200 C) sintering resulted in a composite which excluded flux below 90 K but did not show zero electrical resistance until the metal (alloy) superconducting transition. X-ray diffraction showed the presence of pervoskite and metal. Processing at moderate (450 C) or high (950 C) temperatures resulted in oxygen-depleted pervoskite and/or metal oxides. These materials displayed greatly degraded superconducting properties. Processing at 800 C resulted in high T(sub c) only for composites containing greater than 90% weight fraction ceramic. Reaction of metal with YBa2Cu3O(7-beta) formed superconducting lead/bismuth-based oxides and other binary oxides.

Hepp, Aloysius F.↗
DOE OSTI2020

Soft x-ray absorption spectroscopy and magnetic circular dichroism as operando probes of complex oxide electrolyte gate transistors

Electrolyte-based transistors utilizing ionic liquids/gels have been highly successful in the study of charge-density-controlled phenomena, particularly in oxides. Experimental probes beyond transport have played a significant role, despite challenges in their application in electric double-layer transistors. Here, we demonstrate the application of synchrotron soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) as operando probes of the charge state and magnetism in ion-gel-gated ferromagnetic perovskite films. Electrochemical response via oxygen vacancies at positive gate bias in LaAlO 3 (001)/La 0.5 Sr 0.5 CoO 3-δ is used as a test case. XAS/XMCD measurements of 4–25 unit-cell-thick films first probe the evolution of hole doping (from the O K-edge pre-peak) and ferromagnetism (at the Co L-edges), to establish a baseline. Operando soft XAS/XMCD of electrolyte-gated films is then demonstrated, using optimized spin-coated gels with a thickness of ~1 μm and a specific composition. The application of gate voltages up to +4 V is shown to dramatically suppress the O K-edge XAS pre-peak intensity and Co L-edge XMCD, thus enabling the Co valence and ferromagnetism to be tracked upon gate-induced reduction. Soft XAS and XMCD, with appropriate electrolyte design, are thus established to be viable for the operando characterization of electrolyte-gated oxides.

Yu, Biqiong↗
DOE OSTI2024

Plutonium and Cerium Perrhenate/Pertechnetate Coordination Polymers and Frameworks

Spent nuclear fuel (SNF) contains transuranic and lanthanide species, which are sometimes recovered and repurposed. One particularly problematic fission product, 99 TcO 4 – , hampers this recovery via coextraction with high valence metals, perhaps by complexation during aqueous reprocessing of SNF. There is limited molecular-level knowledge concerning the coordination chemistry between TcO 4 – or its well-known surrogate ReO 4 – and transuranic/lanthanide species. In the current study, we investigated the coordination of ReO 4 – /TcO 4 – with plutonium and cerium cations by structural and chemical characterization of a series of isolated extended solids. In this study, Ce represents both trivalent lanthanides and is considered a surrogate for Pu, respectively, in its common trivalent and tetravalent oxidation states. The structural elucidation of the seven isolated crystalline solids revealed that ReO 4 – /TcO 4 – directly connects to Pu IV , Pu VI O 2 2 + , Ce III , and Ce IV in the terminal and bridging coordination modes, leading to 1-, 2-, and 3-dimensional frameworks. For example, ReO 4 – coordination to Pu(IV) formed a 1D chain or 2D framework, isostructural with previously isolated Th(IV) compounds. However, Pu VI O 2 2 + alternating with ReO 4 – led to a unique 1D chain, different from the prior-reported U(VI)/Np(VI)-ReO 4 – /TcO 4 – structures. Coordination of ReO 4 – /TcO 4 – with Ce(III) promotes the assembly of 3D frameworks. Finally, attempted synthesis of a Ce(IV)-ReO 4 – compound resulted in a 2D framework with a mixed-valence Ce III/IV . The highly acidic reaction conditions supported the reduction of both Ce IV and Tc VII , challenging isolation of compounds featuring these species. Only one TcO 4 -containing structure was obtained in this study (Ce III –TcO 4 3D framework), vs the six total Ce/Pu-ReO 4 compounds. Furthermore, our three Pu-ReO 4 crystal structures are the first reported and translated to atomic-level information about Pu-TcO 4 coordination in nuclear fuel reprocessing scenarios, in addition to broadening our knowledge of bonding trends in the early, high-valence actinides.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2024

Monte Carlo Explicitly Correlated Second-Order Many-Body Green’s Function Calculations of Semiconductor Band Gaps

A systematically converging series of ab initio, post-density-functional, size-consistent, electron-correlated approximations is desired for predictive computing of felectronic band structures of insulating, semiconducting, and metallic solids. A series that meets all of these desiderata (except the applicability to metals) is ab initio many-body Green's function theory based on Gaussian-type-orbital (GTO) basis sets. Here, its leading-order approximation, the second-order Green's function (GF2) method in the diagonal and frequency-independent approximations with the aug-cc-pVDZ basis set, is applied to the fundamental band gaps of three semiconductors (diamond, silicon, and silicon carbide in the zincblende structure) using cluster models. Corrections are made to the basis-set-incompleteness errors by the explicit-correlation (F12) ansatz (GF2-F12) for the valence band edges. The crystals are modeled as surface-passivated clusters of increasing sizes, whose wave functions are expanded by up to 2709 GTO basis functions. Immense computational costs of these calculations are overcome by the highly scalable stochastic algorithm of the Monte Carlo GF2-F12 method, whose operation cost per state increases only as a cubic power of system size, which has a tiny memory footprint and easily achieves near-perfect parallel efficiency on thousands of CPUs or on hundreds of GPUs. The correlated, F12-corrected highest-occupied and lowest-unoccupied molecular-orbital energy (HOMO-LUMO) gap is 5.78 ± 0.07 eV for C 87 H 76 as compared with the experimental value of the fundamental (indirect) band gap of bulk diamond at 5.48 eV. The correlated, F12-corrected HOMO-LUMO gaps for Si 75 H 76 and Si 32 C 43 H 76 are 2.56 ± 0.15 eV and 3.50 ± 0.12 eV, respectively, which are expected to decrease further with increasing cluster sizes. As a result, the experimental fundamental (indirect) band gaps of bulk silicon and silicon carbide are 1.17 eV and 2.42 eV, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗