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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Highly automated optical characterization with FTIR spectrometry

The procedure for evaluating the characteristics of II-VI semiconducting infrared sensor materials with a Fourier Transform Infrared (FTIR) spectrometer system will be discussed. While the method of mapping optical characteristics with a spectrometer has been employed previously, this system is highly automated compared to other systems where the optical transmission data are obtained using a FTIR system with a small stationary aperture in the optical path and moving the specimen behind the aperture. The hardware and software, including an algorithm developed for extracting cut-on wavelengths of spectra, as well as several example results, are described to illustrate the advanced level of the system. Additionally, data from transverse slices and longitudinal wafers of the aforementioned semiconductors will be used to show the accuracy of the system in predicting trends in materials such as shapes of growth interfaces and compositional uniformity.

Perry, G. L. E.↗
NASA NTRS1989

Fluorinated graphite fibers as a new engineering material: Promises and challenges

Pitch based graphitized carbon fibers with electrical resistivity of 300 micro-Ohm/cm were brominated and partially debrominated to 18 percent bromine at room temperature, and then fluorinated at 300 to 450 C, either continuously or intermittently for several cycles. In addition, on fluorine and titanium fluoride intercalated fiber sample was fluorinated at 270 C from the same fiber source. The mass and conductivity of the brominated-debrominated then fluorinated fibers (with fluorine-to-carbon atom ratio of 0.54 or higher) stabilized at room temperature air in a few days. However, at 200 C, these values decreased rapidly and then more slowly, throughout a 2-week test period. The electrically insulative or semiconductive fibers were found to be compatible with epoxy and have the fluorine-to-carbon atom ratio of 0.65 to 0.68, thermal conductivity of 5 to 24 W/m-K, electrical resistivity of 10(exp 4) to 10(exp 11) Ohm/cm, tensile strength of 70 to 150 ksi, Young's modulus of 20 to 30 msi, and CTE (coefficient of thermal expansion) values of 7 ppm/deg C. Data of these physical property values are preliminary. However, it is concluded that these physical properties can be tailor-made. They depend largely on the fluorine content of the final products and the intercalant in the fibers before fluorination, and, to a smaller extent, on the fluorination temperature histogram.

Hung, Ching-Cheh↗
NASA NTRS1990

General upper bound on single-event upset rate

A technique of predicting an upper bound on the rate at which single-event upsets due to ionizing radiation occur in semiconducting memory cells is described. The upper bound on the upset rate, which depends on the high-energy particle environment in earth orbit and accelerator cross-section data, is given by the product of an upper-bound linear energy-transfer spectrum and the mean cross section of the memory cell. Plots of the spectrum are given for low-inclination and polar orbits. An alternative expression for the exact upset rate is also presented. Both methods rely only on experimentally obtained cross-section data and are valid for sensitive bit regions having arbitrary shape.

Chlouber, Dean↗
NASA NTRS1990

Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

Hauenstein, Robert J.↗
NASA NTRS1990

LWIR detector research in InAsSb/InAs

The InAsSb/InSb strained-layer system forms a type-II superlattice in the Sb-rich region of the phase diagram. The band gap of InAsSb/InSb strained-layer superlattices grown on lattice-matched buffers can be varied continuously to produce semiconducting systems with band gaps ranging from that of InSb (0.23 eV with an absorption edge at 5.5 microns at 77 K) to 0. The semiconductor to semimetal transition occurs at As concentrations of approximately 33 percent, with the precise value dependent upon the strain and quantum well dimensions. At higher As content, the system is a semimetal. The authors fabricated photovoltaic detectors with high D asterisk at 77 K at wavelengths beyond 10 microns, and both photovoltaic and photoconductive detectors have been demonstrated with response to 15 microns. The photoconductive detectors exhibit gain of up to 100. Details of the materials growth, studies of the band structure and properties, device processing and the detector performance observed to date in these systems are discussed.

Peercy, Paul S.↗
NASA NTRS1990

Electro-optic network analyzer

The bandwidth of frequency domain measurement methods of electrical signals has usually been far greater than the bandwidth of time domain methods. The primary limits of the time domain approach have been the 20 to 30 GHz bandwidth limit for electronic waveform acquisition instrumentation, and the lack of usable electrical pulse generators for excitation of a test device. The bandwidth of frequency domain network analysis appears to have reached a plateau of between 100 to 200 GHz, while time domain measurement have improved markedly in both bandwidth and sensitivity with the introduction of the pulsed laser based electro-optic sampling approach. Network analysis or the measurement of device scattering parameters provides information necessary to the design of electronic network such as high frequency amplifiers, mixers, and phase shifter. The bandwidth of frequency domain network analysis is currently being exceeded by the next generations of high frequency transistors and devices. Thus the electro-optic approach is a natural means of extending network analysis into the range above 100 GHz by employing time domain methods. In this approach, a suitable electrical excitation pulse is generated and propagated along a transmission line toward a test device. In the picosecond domain, laser driven photoconductive switches provide a unique method of generating electrical transients. Several materials were studied for generating short electrical pulses using photoconductive switches. The various semiconductive materials tested for photoconductive switching, and the electro-optic measurement technique used to characterize the material performance are described.

Jackson, Todd A.↗
NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗
NASA NTRS1991

Subpicosecond time-resolved studies of coherent phonon oscillations in thin-film YBa2Cu3O(6+x) (x less than 0.4)

The results are reported of the first time-resolved observation of impulsively generated coherent optical phonon oscillations in the semiconducting cuprate compound YBa2Cu3O(6+x ) (x less than 0.4). The oscillations, which were probed through time-resolved transmissivity modulation, had a period of 237 fsec at room temperature, corresponding to a Raman active mode at A(1g) symmetry at 142/cm. No oscillations were observed in the superconducting form of Y-Ba-Cu-O either above or below Tc. The amplitude, frequency, and linewidth of this mode were measured over a temperature range from about 7 K to room temperature.

Chwalek, J. M.↗
NASA NTRS1991

A charging study of the ACTS satellite using NASCAP

The results of a charging study conducted with the NASA Charging Analyzer Program (NASCAP) using a model of the Advanced Communications Technology Satellite (ACTS) are presented. The electrostatic discharge mechanisms are described including the field and potential threshold values that were monitored during the NASCAP simulation. Particular attention is given to the charging behavior of the ACTS inclined antennas. The data obtained indicate that the possibility of a discharge occurring in the immediate vicinity of the antennas is minimal when the semiconducting paint layer on the antenna's front surface has sufficient surface conductivity. It is shown that the metallized multilayer insulating blanket ACTS design provides good electrostatic discharge control.

Herr, Joel L.↗
NASA NTRS1992

Mass-Transport Properties In Growth Of Crystals From Vapors

Brief report summarizes results of experimental and theoretical studies of mass-transport properties of GeSe/Gel4 and Hg0.8Cd0.2Te systems in connection with growth of crystals in closed ampoules. Primary emphasis in studies was on thermochemical analyses, on development of mathematical models to predict diffusion-limited mass transport, and on comparison of theoretically predicted with experimental fluxes. Results applied to design, preparation, performance, and analysis of crystal-growth experiments of semiconducting materials on Earth and in outer space. Model extended to predict mass flux and overall composition of transport products of Hg0.8Cd0.2Te transport system.

Wiedemeier, H.↗
NASA NTRS1991

Commercial applications of new photovoltaic technologies

The National Renewable Energy Laboratory (NREL) has directed and managed photovoltaic (PV) research and development (R&D) activities for the Department of Energy for more than 13 years. The NREL budget for these activities is almost $33 million for FY 1991. With the world's increasing concern for the environment and the United States' renewed apprehension over secure and adequate energy supplies, the use of semiconducting materials for the direct conversion of sunlight to electricity - photovoltaics - is an excellent example of government-supported high technology ready for further development by U.S. companies. Some new PV technologies and their research progress, some commercial applications of PV, and NREL's technology transfer activities for helping U.S. industry in its efforts to bring new products or services to the marketplace are described.

Mcconnell, R.↗
NASA NTRS1992

Electronic energy gap of molecular hydrogen from electrical conductivity measurements at high shock pressures

Electrical conductivities were measured for liquid D2 and H2 shock compressed to pressures of 10-20 GPa (100-200 kbar), molar volumes near 8 cu cm/mol, and calculated temperatures of 2900-4600 K. The semiconducting energy gap derived from the conductivities is 12 eV, in good agreement with recent quasi-particle calculations and with oscillator frequencies measured in diamond-anvil cells.

Nellis, W. J.↗
NASA NTRS1993

Processible Polyazomethines

Processibility enhanced by incorporating trifluoromethylbenzene units into molecules. Results of two unexpected properties: high solubility in common organic solvents and lack of crystallinity. Properties coupled with ability of this class of polymers to undergo exchange reactions at elevated temperatures allow these materials to moderate their molecular weights during processing, which affects resulting mechanical properties after processing. Fluorinated polyazomethines form amorphous films that have excellent mechanical properties. Used in moisture-free environments as electronic semiconducting films and adhesives, and as matrix resins for advanced structural composites.

Bryant, Robert G.↗
NASA NTRS1992

A survey and analysis of commercially available hydrogen sensors

The performance requirements for hydrogen detection in aerospace applications often exceed those of more traditional applications. In order to ascertain the applicability of existing hydrogen sensors to aerospace applications, a survey was conducted of commercially available point-contact hydrogen sensors, and their operation was analyzed. The operation of the majority of commercial hydrogen sensors falls into four main categories: catalytic combustion, electrochemical, semiconducting oxide sensors, and thermal conductivity detectors. The physical mechanism involved in hydrogen detection for each main category is discussed in detail. From an understanding of the detection mechanism, each category of sensor is evaluated for use in a variety of space and propulsion environments. In order to meet the needs of aerospace applications, the development of point-contact hydrogen sensors that are based on concepts beyond those used in commercial sensors is necessary.

Hunter, Gary W.↗
NASA NTRS1993

Film Fabrication Technologies at NREL

The National Renewable Energy Laboratory (NREL) has extensive capabilities for fabricating a variety of high-technology films. Much of the in-house work in NREL's large photovoltaics (PV) program involves the fabrication of multiple thin-film semiconducting layers constituting a thin-film PV device. NREL's smaller program in superconductivity focuses on the fabrication of superconducting films on long, flexible tape substrates. This paper focuses on four of NREL's in-house research groups and their film fabrication techniques, developed for a variety of elements, alloys, and compounds to be deposited on a variety of substrates. As is the case for many national laboratories, NREL's technology transfer efforts are focusing on Cooperative Research and Development Agreements (CRADA's) between NREL researchers and private industry researchers.

Mcconnell, Robert D.↗
NASA NTRS1992

Effect of crystal orientation on conductivity and electron mobility in single-crystal alumina

The electrical conductivity of high-purity, single-crystal alumina is determined parallel to and perpendicular to the c-axis. The mean conductivity of four samples of each orientation is a factor 3.3 higher parallel to the c-axis than perpendicular to it. The conductivity as a function of temperature is attributed to extrinsic electron conduction at temperatures from 400 to 900 C, and intrinsic semiconduction at temperatures from 900 to 1300 C. In the high-temperature regime, the slope on all eight specimens is 4.7 +/- 0.1 eV. Hence, the thermal bandgap at O K is 9.4 +/- 0.2 eV.

Will, Fritz G.↗
NASA NTRS1992

Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

Allevato, C. E.↗
NASA NTRS1992

X-ray photoelectron spectroscopy characterization of a nonsuperconducting Y-Ba-Cu-O superconductor-normal-metal-superconductor barrier material

A film of a novel nonsuperconducting Y-Ba-Cu-O (YBCO) barrier material was grown using conditions similar to those reported by Agostinelli et al. (1991) for forming a cubic semiconducting (c-YBCO) phase, and the material was characterized using X-ray photoelectron spectroscopy (XPS). A comparison of the XPS spectra of this material to those obtained from the orthorhombic and tetragonal phases of YBCO (o-YBCO and t-YBCO, respectively) showed that the barrier material had spectral characteristics different from those of o-YBCO and t-YBCO, particularly in the O 1s region. Features associated with the Cu-O chain and surface-reconstructed Cu-O planes were absent, consistent with expectations for the simple perovskite crystal structure of c-YBCO proposed by Agostinelli et al.

Vasquez, R. P.↗