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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
NASA NTRS2024

Foam With Direction: Unraveling the Anisotropic Radiation Shielding Properties of 2D Boron Nitride Nanoplatelet Foams

Neutron radiation exposure is one of the main challenges faced during space missions. There is a critical need for advanced lightweight radiation shielding materials. Two-dimensional (2D) boron nitride nanoplatelets (BNNP) are excellent candidates for polymer matrix nanofillers due to their superior neutron shielding and thermal and mechanical properties. Furthermore, the 2D material anisotropic behavior unlocks the potential for composite property tailoring. This study fabricated ultra- lightweight lamellar BNNP foams (density 0.05 g cm –3 and 97.5% porous) via freeze-drying processing. The neutron shielding effectiveness or mass absorption coefficient of the BNNP foams with walls perpendicular to the direction of the radiation source was 14.47 cm 2 g –1 , while that of the foam with parallel configuration was only 8.51 cm 2 g –1 . The orientation-dependent neutron radiation shielding properties were modeled using the Beer-Lambert law for porous composite materials. The BNNP foam in this study has the potential to benefit advanced tailorable radiation shielding technologies for future aerospace missions.

Radiation shielding↗
NASA NTRS2023

Tribological and Radiation Shielding Response of Novel Titanium-Boron Nitride Coatings for Lunar Structural Components

Aluminum (Al) and titanium (Ti) lightweight alloys play a crucial role in space systems due to their exceptional strength-to-weight ratio. However, their premature failure in the presence of lunar regolith and their lack of neutron shielding ability are significant challenges. To address these issues, we have developed air and vacuum plasma-sprayed hBN (hexagonal Boron Nitride) -reinforced titanium coatings with 2 and 10 vol% of hBN. Tribological studies conducted with JSC-1 A lunar regolith simulant revealed a 90 % reduction in wear volume for the Ti/2 vol% hBN coatings compared to conventional materials due to the synergistic action of harder secondary phases and solid lubrication effect of hBN. Additionally, a 27 % enhancement in radiation shielding is obtained based on the mass absorption coefficient (radiation absorbed per sample density and thickness) for VPS Ti/2 vol% hBN coatings.

Wear↗
NASA NTRSDate not supplied

Aligned Boron Nitride Nanotube Reinforced Polyethylene Nanocomposite for Space Radiation Shielding

With NASA’s Artemis program aiming to establish a human presence on the Moon and eventually on Mars, protecting astronauts from radiation is necessary. Flight-heritage materials, like those with high hydrogen content, such as polyethylene (PE), have proven to be effective radiation shields. This is due to hydrogen’s high charge-to-mass ratio, low secondary radiation production, efficient energy absorption, and high cross-section, which increases the probability of particle interactions to slow or stop ionized particles. Boron nitride nanotubes (BNNTs) and other boron-rich materials offer more effective thermal neutron radiation-stopping capabilities due to their high cross-section and neutron absorption properties. BNNTs also enhance the mechanical properties of radiation shielding material due to their high strength-to-weight ratios. However, integrating high volumes of nanotubes in a matrix without defects presents significant manufacturing challenges. To address this, a bulk nanocomposite laminate fabricating technique, involving synthesizing millimeter-long vertically aligned BNNTs, densifying the nanotubes to high-volume fractions, and infusing the nanotubes with PE while applying heat and pressure was utilized to fabricate the BNNT-PE nanocomposite that was tested for its radiation shielding properties at NASA Langley Research Center’s neutron radiation exposure lab. Results from these experiments will be discussed in the presentation.

Palak B Patel↗
NASA NTRS2025

Lyotropic Liquid Crystalline Phase Behavior of Boron Nitride Nanotube Aqueous Dispersions

Boron nitride nanotubes (BNNTs) are gaining significant interest due to their outstanding mechanical and thermal properties, as well as their potential to serve as a model nanorod system. Processing BNNT liquid crystalline (LC) dispersions enables precise control over BNNT orientation in macroscopic assemblies, while their low absorption in the visible spectrum facilitates studying LCs at exceptionally high concentrations. Here, we investigate the behavior of BNNTs in aqueous solutions stabilized by the surfactant sodium deoxycholate (SDC), examining the effect of BNNT purity and BNNT−SDC concentrations on lyotropic LC formation. We disperse up to 15wt% BNNT in SDC solutions and use polarized light microscopy to detail the transition from an isotropic state to a biphasic regime, where isotropic and nematic domains coexist due to phase separation, to a single fully nematic phase. Cryogenic electron microscopy provides direct evidence of BNNT alignment within nematic domains. Our results show that enhanced depletion-induced attractions, driven by increased surfactant concentration, lower the threshold concentration of BNNT required to form nematic domains. In contrast, low surfactant concentrations relative to BNNT result in insufficiently coated nanotube surfaces, leading to poor dispersions and BNNT aggregation. Additionally, we fabricate well-aligned BNNT films from aqueous LC dispersions. Our findings advance the understanding of BNNT LCs, offering insight into controlling their orientation and highlighting their potential for high-performance materials.

Joe Khoury↗
NASA NTRS2025

High-density Boron Nitride Nanotube Composites via Surfactant-stabilized Lyotropic Liquid Crystals for Enhanced Space Radiation Shielding

Despite significant technological advancements in space exploration, human space travel and colonization remain limited by the health risks associated with space radiation. Boron nitride nanotubes (BNNTs) have been proposed as an advanced material for space applications due to their high specific strength and efficient radiation shielding capabilities. However, the practical implementation of BNNTs has been slow, primarily due to technological challenges in fabricating structural materials incorporating BNNTs. In this study, a method is presented for fabricating high-density BNNT films that are mechanically robust, exhibit high thermal conductivity, and effectively attenuate space radiation. The key advancement enabling high-density BNNT films is the successful preparation of BNNT liquid crystals (LCs), achieved through the strategic use of a commercial dodecylbenzenesulfonic acid surfactant. This surfactant ensures exceptional BNNT stability in aqueous dispersion, even at concentrations exceeding the LC phase transition threshold. Simulations, estimating the equivalent radiation dose to the human body in space, indicate that a high-density BNNT film with a surface density of 50 g cm−2 reduces the total dose equivalent rate by 56% compared to zero shielding. This enhancement would allow astronauts to extend their mission duration on the lunar surface by a factor of two.

Young-Kyeong Kim↗
DOE OSTI2020

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Applied magnetic field synthesis and processing of iron nitride magnetic materials

Techniques are disclosed concerning applied magnetic field synthesis and processing of iron nitride magnetic materials. Some methods concern casting a material including iron in the presence of an applied magnetic field to form a workpiece including at least one ironbased phase domain including uniaxial magnetic anisotropy, wherein the applied magnetic field has a strength of at least about 0.01 Tesla (T). Also disclosed are workpieces made by such methods, apparatus for making such workpieces and bulk materials made by such methods.

Wang, Jian-Ping↗
DOE OSTI2023

Sub-stoichiometric metal nitrides

A non-stoichiometric nanocomposite coating and method of making and using the coating. The non-stoichiometric nanocomposite coating is disposed on a base material, such as a metal or ceramic; and the nanocomposite consists essentially of a matrix of an alloy selected from the group of Cu, Ni, Pd, Pt and Re which are catalytically active for cracking of carbon bonds in oils and greases and a grain structure selected from the group of borides, carbides and nitrides.

Eryilmaz, Osman Levent↗
DOE OSTI2023

Simulation of gallium nitride vertical fin-shaped field effect transistor for use as thermal neutron detector

Through the use of a radiation detection system simulation framework, a gallium nitride vertical fin-shaped field effect transistor (FinFET) was studied for output response when utilized as a thermal neutron detector. The FinFET was assumed to had been backfilled with boron carbide, reactive to thermal neutrons. The GaN FinFET was modeled with radiation transport from MCNP, and the electronic transport from COMSOL Multiphysics. Fabricated FinFET devices (not neutron reactive) were tested to aid in the tuning of the COMSOL FinFET model. Through time-depenent studies, the drain current response pulse to simulated ionization due to single events lead to building of a database of device responses to radiation. By integrating the current pulses over time, the induced charge was calculated. Using the results of the radiation transport PTRAC file in combination with the induced charge database, an integrated charge spectrum was calculated.

Davidson, Bryce L.↗
DOE OSTI2024

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111>oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

Matias, Vladimir↗
DOE OSTI2024

Perovskite Grown in Gallium Nitride Nanowire Matrix for Stable and High‐Efficiency X‐Ray Detection

High-quality quasi-2D perovskites in a GaN nano-wire matrix are grown to build a 3D hetero-structure for high-performance X-ray sensing. In the 3D hetero-structure, GaN nano-wire matrix serves as an n-type charge collector that can rapidly extract carriers through the bulk film of the perovskite layer. Together with a p-type top electrode, a p–i–n diode with the 3D hetero-structure is built, that exhibits a rectified current–voltage characteristic. After analyzing the interface energy alignment, it is found that the fermi levels of the perovskite and GaN are aligned in the dark, and a quasi-fermi level splits upon illumination, introducing a built-in electrical field at the interface. As a result, strong photo-induced current is observed from the diode without an external field. Finally, the 3D diode for X-ray detection demonstration is used, revealing a sensitivity of 308.9 µC Gy air -1 cm -2 at an exceptionally low applied field of 0.125 V µm -1 . The X-ray-induced signal from the 3D diode is stable after 155 cycles of X-ray irradiation under a constant electric field. This demonstration informs a new 3D architecture for high-performance X-ray sensing, and it shows that GaN is a robust n-type interface for perovskite optoelectronic devices.

36 MATERIALS SCIENCE↗