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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Neudeck, Philip G.↗
DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Concurrent characterization of GaN MOSHEMT gate leakage via electrical and thermoreflectance measurements

In this work, we report the first concurrent use of electrical and thermal characterization, via thermoreflectance, to analyze Time Dependent Dielectric Breakdown in GaN MOSHEMTs. Electrically stressing the devices until a failure occurs, then evaluating them via thermoreflectance, revealed a geometric dependence of the failure mode. Further, all soft breakdowns occurred at the mesa edge where the electric field strength was at its strongest, and tunneling current density was at its highest. This breakdown phenomenon at the mesa edge has been seen previously in GaN HEMTs employing a mesa architecture. Possible approaches to mitigate these failures in MOSHEMTs are proposed.

42 ENGINEERING↗
DOE OSTI2021

Lightning Current Propagation in Electrical Conduit

Investigation of lightning strikes to conductors ran through long spans of rigid steel conduit was performed. An overdamped-exponential current waveform with controlled peaks and rise rates was used to inject simulated lightning strikes. The impact of the length of wire, length of conduit, grounding location/s, and load type was investigated. Breakdown of 600 V, 12 AWG, THHN insulated wire (3.23 mm OD, 2 mm conductor diameter) was observed for voltages above 45 kV. The presence of resistive loads (between wire and ground) in excess of 20 ohms, or current rise times in excess of 5 kA/μs were found to consistently produce breakdown between wire and conduit. Practical power circuit elements such as outlets and splices were found to breakdown at voltage levels much below the wire insulation failure threshold.

47 OTHER INSTRUMENTATION↗
NASA NTRS2018

Numerically Simulating an Expanding Continuum Jet into a Surrounding Non-Continuum Region

A numerical technique that simulates the interaction between a continuum jet and a free-molecular, rarefied or transitional flow field is presented and applied. The technique is based on selecting a boundary between the expanding jet plume and interacting flow field defined by the Bird breakdown parameter, P. By properly choosing the boundary, the jet plume computed by computational fluid dynamics (CFD) is uncoupled from the interaction region that is simulated by direct simulation Monte Carlo (DSMC). The mechanics of uncoupling the continuum and non-continuum regions is discussed first. Also, a discussion of expanding continuum plume breakdown and the formulation of the Bird breakdown parameter is presented. To show the usefulness, examples of applying the CFD-DSMC technique are given. Many of the examples were taken from projects worked by the staff of the Aerothermodynamics Branch at the NASA Langley Research Center. These examples show a variety of applications of the technique and allow those examples not previously documented to be formally presented.

Jet interaction↗
NASA NTRSDate not supplied

Comparison Between DSMC and CFD for Hypersonic Planetary Entry Simulations

Hypersonic planetary entry flows span a wide range of Knudsen numbers between rarefied and continuum flows. While computational fluid dynamics (CFD) techniques cannot provide an accurate solution for flows in the rarefied regime, the direct simulation Monte Carlo (DSMC) method is capable of providing accurate solutions for flows in both in the rarefied and continuum regimes but becomes prohibitively expensive as the Knudsen number decreases. For the purpose of thermal protection systems (TPS) design and post-flight reconstruction, various selected points along an entry trajectory are often solved using hypersonic solvers. The quantities of interest that are obtained from that exercise are generally surface quantities, such as pressure, heat flux and enthalpy. Then, material response solvers are used to either design the heat shield to an optimal thickness based on a choice of material, or to provide in-depth heating profiles through the material at various select locations, and compare with flight instrumentation such as the ones that flew on NASA’s two most recent Mars missions, MSL and Mars2020. While most of the heating is generally experienced during the continuum part of the entry, the heating within the rarefied regime is significant for some atmospheres, and hence the flow solutions need to be computed using the DSMC method. Ensuring consistency between hypersonic CFD and the DSMC is crucial so that reliable surface quantities can be passed to material response solvers. Studies were performed to compare the two methods at various select locations, for both non-reacting argon flows as well reacting CO2/N2 flows. Preliminary conclusions show that, for non-reacting flows, the agreement between the two methods for surface heating is excellent (within expected uncertainties) for a freestream Knudsen number of 0.0006, and gets progressively worse as the Knudsen number increases to 0.06. Continuum breakdown analyses were performed and showed that, in general, the Gradient Length Local Knudsen number (KnGLL) from Boyd and associated criterion (KnGLL > 0.05) seems conservative in predicting zones of breakdown in the flow, and associated errors for surface quantities. Updated criteria of KnGLL = 2.0 and 0.5 appear to be more appropriate for surface and flow quantities, respectively. Furthermore, when studying reacting flows, our studies showed that while flow quantities are highly dependent on relaxation parameters and chemistry rates, it is possible to obtain a good agreement for surface heating, as long as the continuum breakdown is minimal.

DSMC↗
DOE OSTI2024

Development of AlGaN‐Based Deep‐Ultraviolet Avalanche Photodetectors—Toward Their Intrinsic Characteristics

Al 0.6 Ga 0.4 N deep‐UV p–i–n avalanche photodiodes (APDs) are demonstrated grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) c‐plane aluminum nitride (AlN) bulk substrate and fabricated both with and without an ion implantation process for mesa‐edge electric‐field termination. Three design considerations are taken into account: the optical absorption of the AlN bulk substrate, the photosensitivity of the APD, and the breakdown electric field. The MOCVD growth conditions of the AlGaN APD layers are optimized. Then, a detailed description of the seven device fabrication steps of the APDs is provided, which includes nitrogen ion implantation. The APDs fabricated by the ion implant process exhibit a dark‐current density under low reverse bias ≈1 × 10 −9 A cm −2 . This is one order of magnitude lower than the APD fabricated without ion implantation from the same wafer. The breakdown voltage of the APD is ≈−140 V. The calculated optical gain of the ion‐implanted APD beyond avalanche breakdown is ≈5.2 × 10 5 (current limited) and the device has an average zero‐bias photoresponse of ≈68 mA W −1 at a wavelength of 250 nm.

Jeong, Hoon [Department of Electronic Engineering ↗
DOE OSTI2021

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗
DOE OSTI2024

Time-dependent thermal degradation of lost circulation materials in geothermal systems

Treatment of lost circulation can represent anywhere from 5 to 25 % of the cost in drilling geothermal wells. The cost of the materials used for lost circulation treatment is less important than their effectiveness at reducing fluid losses. In geothermal systems, the high temperatures (>90 °C) are expected to degrade many commonly used lost circulation materials over time. This degradation could compromise different materials ability to mitigate fluid loss, creating more non-productive time as multiple treatments are needed, but may result in recovering desired permeability zones within the reservoir section over time. This research aimed to study how thermal degradation of eight different lost circulation materials affected their properties relevant to sealing loss zones in geothermal wells. Here, mass loss experiments were conducted with each material at temperatures of 90–250 °C for 1–42 days to measure the breakdown of the material at geothermal conditions, collecting gases during several experiments to determine the waste produced during degradation. Compaction experiments were conducted with the degraded materials to show how temperatures reduced the rigidity and increased packing of the materials. Viscosity tests were conducted to show the impact of different materials on drilling fluid rheology. Microscope observations were conducted to characterize the alterations to each material due to thermal degradation. Organic materials tend to degrade more than inorganic materials, with organics like microcellulose, cotton seed hulls and sawdust losing 30–50 % of their mass after 1 day of heating at 200 °C, while inorganics like magma fiber only lose ~5–10 % of its mass after one day of heating at 200 °C. Granular materials are the strongest when compacted despite any mass loss, while fibrous and flaky materials are fairly weak and breakdown easily under stress. The materials do not generally affect fluid rheology unless they have a viscosifying agent as part of the mixture. Microscopic analysis showed that more rigid materials like microcellulose and cedar fiber degrade in brittle manners with splitting and fracturing, while others like cotton seed hulls degrade in more ductile manners forming meshes or clumps of material. The thermal breakdown of lost circulation materials tested suggests that each material should also be classified by its degree of thermal degradability, as at certain temperatures the materials can lose the capability to bridge loss zones around the wellbore.

15 GEOTHERMAL ENERGY↗
DOE OSTI2026

Electrochemical Reactions Under Reverse Bias Create Additional Mobile Ions That Enable Hole Tunneling in Metal Halide Perovskite Diodes

Gradual reverse-bias breakdown in metal-halide perovskite diodes and solar cells is thought to originate from hole tunneling through steep bands in an ionic depletion region near the electron-transport layer after positively charged iodine vacancies accumulate near the hole-transport layer (HTL). However, typical reported mobile-ion concentrations near 1 x 10^17 cm-3 are too small to quantitatively explain significant tunneling-current densities and (Zener) breakdown observed near -5 V. Here, we show that inferred mobile-ion concentrations increase by more than 100x, to over 1 x 10^18cm-3 , within just 3 min of reverse bias at -6.0 V in p-i-n perovskite diodes. We attribute this increase to iodide oxidation and coupled iodine vacancy creation that must be balanced by reduction reactions near the HTL. Sub-optimal HTL coverage leads to direct contact between the transparent conducting electrode and perovskite, facilitates reduction events, enables the creation of even larger inferred mobile-ion concentrations (~1 x 10^19cm-3 ), and leads to faster degradation under reverse bias. This explains previous work that showed increased breakdown voltages and improved reverse-bias stability by implementing thick, uniform HTLs.

14 SOLAR ENERGY↗
DOE OSTI2022

Dynamics and bifurcations of laminar annular swirling and non-swirling jets

This paper presents bifurcation analyses characterising the nonlinear dynamics of fully developed laminar annular jets with respect to the centrebody diameter ${ {d}}$ , Reynolds number ${ {Re}}$ , and swirl ratio ${ {S}}$ . Similar flows appear in numerous applications and feature a vibrant range of topological and dynamical characteristics associated with phenomena including shear layer separation and vortex breakdown. Our results begin by describing the non-monotonic evolution of the axisymmetric jet's steady topology under varying ${ {S}}$ . In accord with earlier reports, the jet progresses through a sequence of wake, breakdown and wall jet regimes in a qualitatively similar manner across a wide span of ${ {d}}$ and ${ {Re}}$ values. In the wake regime, the non-swirling jet bifurcates to a plane-symmetric, but not axisymmetric, steady flow pattern beyond a ${ {d}}$ -dependent critical ${ {Re}}$ value. With further increase in ${ {Re}}$ , the steady non-swirling jet destabilises subsequently via multiple distinct Hopf bifurcations. Introducing ${ {S}}>0$ to the jet also induces unsteadiness by twisting the singly azimuthally periodic ( $|m|=1$ ) asymmetric wake structure and causing it to precess periodically in time about the central axis. Intermediate swirl stabilises this unsteady dynamics and restores the jet's axisymmetry. This stabilising effect is then reversed in the breakdown regime at higher ${ {S}}$ , where a variety of different $|m|=1$ and $|m|=2$ instabilities bifurcate from the steady flow as ${ {S}}$ is increased. Several instances of hysteresis and subcritical behaviour are reported and discussed, including one that manifests precessing vortex core oscillations.

Douglas, Christopher M. (ORCID:0000000259683315)↗
DOE OSTI2022

Resolving Current-Dependent Regimes of Electroplating Mechanisms for Fast Charging Lithium Metal Anodes

Poor fast-charge capabilities limit the usage of rechargeable Li metal anodes. Understanding the connection between charging rate, electroplating mechanism, and Li morphology could enable fast-charging solutions. In this report we develop a combined electroanalytical and nanoscale characterization approach to resolve the current-dependent regimes of Li plating mechanisms and morphology. Measurement of Li + transport through the solid electrolyte interphase (SEI) shows that low currents induce plating at buried Li||SEI interfaces, but high currents initiate SEI-breakdown and plating at fresh Li||electrolyte interfaces. The latter pathway can induce uniform growth of {110}-faceted Li at extremely high currents, suggesting ion-transport limitations alone are insufficient to predict Li morphology. At battery relevant fast-charging rates, SEI-breakdown above a critical current density produces detrimental morphology and poor cyclability. Thus, prevention of both SEI-breakdown and slow ion-transport in the electrolyte is essential. This mechanistic insight can inform further electrolyte engineering and customization of fast-charging protocols for Li metal batteries.

25 ENERGY STORAGE↗
DOE OSTI2024

A role for subducting clays in the water transportation into the Earth’s lower mantle

Subducting sedimentary layer typically contains water and hydrated clay minerals. The stability of clay minerals under such hydrous subduction environment would therefore constraint the lithology and physical properties of the subducting slab interface. Here we show that pyrophyllite (Al 2 Si 4 O 10 (OH) 2 ), one of the representative clay minerals in the alumina-silica-water (Al 2 O 3 -SiO 2 -H 2 O, ASH) system, breakdowns to contain further hydrated minerals, gibbsite (Al(OH) 3 ) and diaspore (AlO(OH)), when subducts along a water-saturated cold subduction geotherm. Such a hydration breakdown occurs at a depth of ~135 km to uptake water by ~1.8 wt%. Subsequently, dehydration breakdown occurs at ~185 km depth to release back the same amount of water, after which the net crystalline water content is preserved down to ~660 km depth, delivering a net amount of ~5.0 wt% H 2 O in a phase assemblage containing δ-AlOOH and phase Egg (AlSiO 3 (OH)). Our results thus demonstrate the importance of subducting clays to account the delivery of ~22% of water down to the lower mantle.

58 GEOSCIENCES↗
DOE OSTI2021

Experimental study of atmospheric pressure single-pulse nanosecond discharge in pin-to-pin configuration

We present an experimental study of nanosecond high-voltage discharges in a pin-to-pin electrode configuration at atmospheric conditions operating in single-pulse mode (no memory effects). Discharge parameters were measured using microwave Rayleigh scattering, laser Rayleigh scattering, optical emission spectroscopy enhanced with a nanosecond probing pulse, and fast photography. Spark and corona discharge regimes were studied for electrode gap sizes 2-10 mm and discharge pulse duration of 90 ns. The spark regime was observed for gaps < 6 mm using discharge pulse energies of 0.6-1 mJ per mm of the gap length. Higher electron number densities, total electron number per gap length, discharge currents, and gas temperatures were observed for smaller electrode gaps and larger pulse energies, reaching maximal values of about 7.5 x 10 15 cm -3 , 3.5 x 10 11 electrons per mm, 22 A, and 4,000 K (at 10 microseconds after the discharge), respectively, for a 2 mm gap and 1 mJ/mm discharge pulse energy. Initial breakdown was followed by a secondary breakdown occurring about 30-70 ns later and was associated with ignition of a cathode spot and transition to cathodic arc. Here, a majority of the discharge pulse energy was deposited into the gas before the secondary breakdown (85-89%). The electron number density after the ns-discharge pulse decayed with a characteristic time scale of 150 ns governed by dissociative recombination and electron attachment to oxygen mechanisms. For the corona regime, substantially lower pulse energies (~0.1 mJ/mm), peak conduction current (1-2 A), and electron numbers (3-5 x 10 10 electrons per mm), and gas temperatures (360 K) were observed.

42 ENGINEERING↗
DOE OSTI2022

Ab-initio Cu alloy design for high-gradient accelerating structures

Operation of normal conducting accelerator structures at high accelerating gradients is beneficial for many accelerator applications in basic science, industry, medicine, and National Security. RF breakdown is the major factor that limits the achievable accelerating gradients. Previous experiments on copper (Cu) have demonstrated that RF breakdown probability can be significantly decreased by hardening the material and alloying Cu with solutes such as silver (Ag). In this paper, we propose a figure-of-merit (FOM) that characterizes the ability of Cu alloys to withstand high-gradients. The FOM represents a trade-off between hardening through solid solution strengthening and the additional thermal stress induced by incremental RF pulse heating resulting from changes in electronic properties induced by alloying. We performed high-throughput ab initio calculations and computed the FOM for a large number of binary Cu alloys. Several promising candidate alloys for high-gradient accelerating structures were identified, such as CuAg, CuCd, CuHg, CuAu, CuIn, and CuMg. CuAg alloys have previously exhibited low RF breakdown rates in experiments. The results provide guidance for selecting alloys for the future high-gradient normal conducting accelerating structures operating at very high gradients.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Imaging high jitter, very fast phenomena: A remedy for shutter lag

Dielectric breakdown is an example of a natural phenomenon that occurs on very short time scales, making it incredibly difficult to capture optical images of the process. Event initiation jitter is one of the primary challenges, as even a microsecond of jitter time can cause the imaging attempt to fail. Initial attempts to capture images of dielectric breakdown using a gigahertz frame rate camera and an exploding bridge wire initiation were stymied by high initiation jitter. Subsequently, a novel optical delay line apparatus was developed in order to effectively circumvent the jitter and reliably image dielectric breakdown. Here, the design and performance of the optical delay line apparatus are presented. The optical delay line increased the image capture success rate from 25% to 94% while also permitting enhanced temporal resolution and has application in imaging other high-jitter, extremely fast phenomena.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Field-dependent carrier transport in implanted isolation region of GaN lateral power devices

Among GaN lateral power devices, with proper E-field management, the breakdown occurs in the device isolation region rather than the active region. In this paper, we investigate field-dependent carrier transport in the isolation structures. Isolation test structures with variations in buffer doping, un-intentionally doped (UID) GaN thickness, and implantation conditions were fabricated. Electrical characterization was performed over a wide range of voltage and temperature. With varying UID GaN thickness and buffer doping, the leakage current and breakdown characteristics remain the same for a specific implantation condition, indicating that the leakage conduction and breakdown are governed by the implanted GaN region. Analysis of the temperature-dependent I–V reveals that carrier transport in the implanted GaN can be well explained by hopping conduction, involving three distinctive regions of operation depending on the E-field. At low E-field, carrier transport is ohmic, consistent with variable range hopping, driven by thermal activation. At medium E-field, a field enhanced thermally activated hopping is observed, following σ ∼ σ(T)exp(E). At high E-field, activation-less hopping is visible, following σ ∼ exp(−1/E), which occurs above a critical E-field limited by localization length.

Sadek, Mansura (ORCID:0000000322588338)↗
DOE OSTI2023

Toward improved PVDF-BaTiO 3 composite dielectrics: mechanical activation of the filler versus filler content

Abstract Barium titanate (BT) perovskite particles were surface modified by means of mechanical treatment and used as inorganic component in polyvinylidene fluoride (PVDF) based composites. The changes in electrical properties of the composite films with increasing in filler content were followed by dielectric spectroscopy, breakdown strength andD-Emeasurements. A comparison of the properties of the composites prepared with untreated and mechanically activated particles revealed that there is a significant difference in their performances at low filler concentrations (<20 wt%). Introduction of the surface modified ceramic particles into PVDF matrix led to an increase of the dielectric constant without affecting significantly the electrical breakdown strength. In contrast, when as received BT particles were used a filler, both dielectric constants and breakdown strengths of the composite films were lower than the corresponding values observed for the pure PVDF. At higher concentrations, however, the influence of pre-treatment of the filler on the effective electrical properties becomes less significant. The obtained results were discussed in terms of the pronounced crystallization of polarβandγcrystal phases of PVDF in the presence of surface modified BT fillers, which is confirmed by Raman spectroscopy.

Physics↗