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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 811 records · Page 45
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Search for long-lived particles decaying to jets with displaced vertices in proton-proton collisions at √ s = 13 TeV

A search is presented for long-lived particles produced in pairs in proton-proton collisions at the LHC operating at a center-of-mass energy of 13 TeV . The data were collected with the CMS detector during the period from 2015 through 2018, and correspond to a total integrated luminosity of 140 fb –1 . This search targets pairs of long-lived particles with mean proper decay lengths between 0.1 and 100 mm , each of which decays into at least two quarks that hadronize to jets, resulting in a final state with two displaced vertices. No significant excess of events with two displaced vertices is observed. In the context of R-parity violating supersymmetry models, the pair production of long-lived neutralinos, gluinos, and top squarks is excluded at 95% confidence level for cross sections larger than 0.08 fb, masses between 800 and 3000 GeV, and mean proper decay lengths between 1 and 25 mm.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

Search for long-lived particles with displaced vertices in multijet events in proton-proton collisions at s = 13 TeV

Results are reported from a search for long-lived particles in proton-proton collisions at √s=13 TeV delivered by the CERN LHC and collected by the CMS experiment. The data sample, which was recorded during 2015 and 2016, corresponds to an integrated luminosity of 38.5 fb -1 . This search uses benchmark signal models in which long-lived particles are pair-produced and each decays into two or more quarks, leading to a signal with multiple jets and two displaced vertices composed of many tracks. No events with two well-separated high-track-multiplicity vertices are observed. Upper limits are placed on models of R-parity violating supersymmetry in which the long-lived particles are neutralinos or gluinos decaying solely into multijet final states or top squarks decaying solely into dijet final states. For neutralino, gluino, or top squark masses between 800 and 2600 GeV and mean proper decay lengths between 1 and 40 mm, the analysis excludes cross sections above 0.3 fb at 95% confidence level. Gluino and top squark masses are excluded below 2200 and 1400 GeV, respectively, for mean proper decay lengths between 0.6 and 80 mm. A method is provided for extending the results to other models with pair-produced long-lived particles.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned L a 2 / 3 S r 1 / 3 Mn O 3 : ZnO nanopillar composites

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La 2/3 Sr 1/3 MnO 3 : ZnO nanocomposites, in which La 2/3 Sr 1/3 MnO 3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( B ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Supervised Learning-Based Spatial Position Estimation with Vertical Displacement for Hovering UAV Wireless Power Transfer

This study presents a supervised learning-based spatial position estimation approach for wireless power transfer (WPT) systems supporting hovering unmanned aerial vehicle (UAV) charging. Unlike stationary charging scenarios, hovering UAVs introduce continuous lateral misalignment and vertical displacement, leading to variations in magnetic coupling and reduced power transfer efficiency. To address this challenge, the proposed method estimates the relative spatial position of the receiver coil using only electrical measurements obtained at the secondary side. A supervised learning model is trained to map output voltage and current features to spatial coordinates, enabling position awareness without requiring external sensors, vision systems, or communication links. The sensing functionality is inherently integrated into the WPT system, allowing simultaneous power transfer and localization through the same magnetic interface. Experimental validation is conducted on a laboratory-scale prototype under varying lateral offsets and air-gap conditions. In addition, spline-based interpolation is employed to increase spatial data density for training. The results demonstrate that the proposed framework can capture spatial variations associated with both lateral and vertical displacement, providing reliable position estimation under hovering conditions. This work establishes a hardware-efficient, sensorless solution for UAV wireless charging and serves as a baseline for advanced data-driven position estimation methods in dynamic WPT systems.

Asa, Erdem [ORNL] (ORCID:0000000190884812)↗
DOE OSTI2023

1 kV Self-Aligned Vertical GaN Superjunction Diode

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance (R ON ) of 0.4 mΩ· cm2, and a SJ drift-region resistance ( R dr ) of 0.13 mΩ· cm2. Further, the device also exhibits good thermal stability with B V retained over 1 kV and R ON dropped to 0.3 mΩ· cm2 at 125°C. The trade-off between B V and R dr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.

42 ENGINEERING↗
DOE OSTI2025

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗
DOE OSTI2013

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

Chowdhury, S↗
DOE OSTI2023

Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices

Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.

42 ENGINEERING↗
DOE OSTI2014

Influence of seed layers on the vertical growth of ZnO nanowires by low-temperature wet chemical bath deposition on ITO-coated glass substrate

Aligned ZnO nanowires (NWs) were synthesized by low-temperature wet chemical bath deposition (CBD) technique on indium tin oxide (ITO)-coated glass substrates using c-axis orientated ZnO and AZO (Al-doped ZnO) seed layers through the RF sputtering deposition process under different conditions. The growth direction of ZnO NW was controlled by using the two different seed layers. Results showed single-crystalline structure of the ZnO NWs with the highest peak intensity in (002) crystalline direction. In addition, NWs seeding form AZO layer, grown on ITO coated glass, were vertically aligned and uniformly distributed on the substrate. The effects of precursor concentration, growth temperature, and seed layer on NW morphology were investigated in two different seed layers systematically. The intensity of broad emissions at 500–600 nm emission was observed in room temperature photoluminescence (PL) spectra for samples prepared under optimized parameters. In addition, the green emission intensity of ZnO NWs growth on the ZnO seed layer was much weaker than that of AZO seed layer. The experimental results indicate that the selection of seed layers, precursor concentration, and the growth temperature are key parameters to vertical growth of NWs for the application of nanoscale devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness

The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface roughness, crystal damage, and etch angle. Etch depths from 2 to 3.4 μm are shown in this paper. The authors investigate the formation of etch pits and its contributing factors. In addition, a nickel hard mask process is presented, with an investigation into the causes of micromasking and a pre-etch to prevent it. The authors show the results of optimized etch conditions resulting in a 2 μm deep, 0.831 nm rms roughness etch, with a 7.6° angle from vertical and low surface damage as measured by photoluminescence.

Tahhan, Maher↗
DOE OSTI2019

3D strain-induced superconductivity in La 2 CuO 4+δ using a simple vertically aligned nanocomposite approach

A long-term goal for superconductors is to increase the superconducting transition temperature, T C . In cuprates, T C depends strongly on the out-of-plane Cu-apical oxygen distance and the in-plane Cu-O distance, but there has been little attention paid to tuning them independently. Here, in simply grown, self-assembled, vertically aligned nanocomposite thin films of La 2 CuO 4+δ + LaCuO 3 , by strongly increasing out-of-plane distances without reducing in-plane distances (three-dimensional strain engineering), we achieve superconductivity up to 50 K in the vertical interface regions, spaced ~50 nm apart. No additional process to supply excess oxygen, e.g., by ozone or high-pressure oxygen annealing, was required, as is normally the case for plain La 2 CuO 4+δ films. Finally, our proof-of-concept work represents an entirely new approach to increasing >T C n cuprates or other superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics

Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin optoelectronic devices due to their high absorption coefficients and intrinsically passivated surfaces. To maintain these near-perfect surfaces, recent research has focused on fabricating contacts that limit Fermi-level pinning at the metal-semiconductor interface. Here, we develop a new, simple procedure for transferring metal contacts that does not require aligned lithography. Using this technique, we fabricate vertical Schottky-junction WS 2 solar cells, with Ag and Au as asymmetric work function contacts. Under laser illumination, we observe rectifying behavior and open-circuit voltage above 500 mV in devices with transferred contacts, in contrast to resistive behavior and open-circuit voltage below 15 mV in devices with evaporated contacts. One-sun measurements and device simulation results indicate that this metal transfer process could enable high specific power vertical Schottky-junction transition metal dichalcogenide photovoltaics, and we anticipate that this technique will lead to advances for two-dimensional devices more broadly.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them

Results of investigation of 1550 nm range stripe semiconductor lasers fabricated from heterostructures with different designs of the gain medium are presented. It is shown that the proposed designs of the gain medium allow obtaining the effective lasing at high level of total optical losses, comparable with the typical optical losses in the vertical-cavity surface-emitting lasers. The evaluation of modal gain in different types of the gain mediummade it possible to estimate the possible frequencies of the small-signal modulation of vertically emitting lasers and proposed the ways to increase them up to 20 GHz or more.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Phase transformations during the Ag-In plating and bonding of vertical diode elements of multijunction solar cells

The conditions of the bonding of silicon multijunction solar cells with vertical p-n junctions using Ag-In solder are studied. The compositions of electrodeposited indium films on silicon wafers silver plated by screen printing and silver and indium films fabricated by layer-by-layer electrochemical deposition onto the surface of silicon vertical diode cells silver plated in vacuum are studied. Studying the electrochemical-deposition conditions, structure, and surface morphology of the grown layers showed that guaranteed bonding is provided by 8-min heat treatment at 400 Degree-Sign C under the pressure of a stack of metallized silicon wafers; however, the ratio of the indium and silver layer thicknesses should not exceed 1: 3. As this condition is satisfied, the solder after wafer bonding has the InAg{sub 3} structure (or InAg{sub 3} with an Ag phase admixture), due to which the junction melting point exceeds 700 Degree-Sign C, which guarantees the functioning of such solar cells under concentrated illumination.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Vertical heterostructures based on graphene and other 2D materials

Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm

The optical properties of epitaxial layers and heterostructures based on Pb{sub 1–x}Eu{sub x}Te alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is shown that the optimal heteropair for laser microcavities is Pb{sub 1–x}Eu{sub x}Te(x ≈ 0.06)/EuTe. On the basis of this heteropair, highly reflective Bragg mirrors consisting of just three periods and featuring a reflectance of R ⩾ 99.8% at the center of the stop band are grown by molecular-beam epitaxy on BaF{sub 2} (111) substrates. Single-mode optically pumped vertical-cavity surface-emitting lasers for the 4–5 μm spectral range operating at liquid-nitrogen temperatures are demonstrated.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Morphological and spectroscopic studies on the vertically aligned zinc oxide nanorods grown on low and high temperature deposited seed layer

Vertically aligned zinc oxide nanorods were grown on low and high temperature deposited aluminium doped zinc oxide seed layer by hydrothermal method and annealed to improve crystallinity. The morphology of the seed layer and the grown nanorods were studied by field emission scanning electron microscopy characterization technique. The properties of the zinc oxide nanorods were analyzed using laser spectroscopic studies. Resonant Raman spectroscopy reveals the unique increase in the A{sub 1}(LO) mode of vibration with increase in count. The luminescence property of the nanorods was studied with photoluminescence spectrometer. The vertically aligned zinc oxide nanorods show, the very high band edge emission in the ultraviolet region of the electromagnetic spectrum.

36 MATERIALS SCIENCE↗